Rail-to-Rail Input/Output Amplifier
AD8028-KGD-CHIPS
Rev. 0
rights of third parties that may result from its use. Specifications subject to change without notice. No
Trademarks and registered trademarks are the prop erty of their respective owner s.
Fax: 781.461.3113 ©2012 Analog Devices, Inc. All rights reserved.
Known Good Die
FEATURES
High speed
190 MHz, –3 dB bandwidth (G = +1)
100 V/µs slew rate
Low distortion
120 dBc @ 1 MHz SFDR
80 dBc @ 5 MHz SFDR
Selectable input crossover threshold
Low noise
4.3 nV/√Hz
1.6 pA/√Hz
Low offset voltage: 900 µV max
Low power: 6.5 mA/amplifier supply current
Disable mode
Wide supply range: 2.7 V to 12 V
Known good die (KGD): these die are fully guaranteed to
data sheet specifications
APPLICATIONS
Filters
ADC drivers
Level shifting
Buffering
Professional video
Low voltage instrumentation
GENERAL DESCRIPTION
The AD8028-KGD-CHIPS1 is a high speed amplifier with railto-rail input and output that operates on low supply voltages and
is optimized for high performance and wide dynamic signal
range. The AD8028-KGD-CHIPS has low noise (4.3 nV/√Hz,
1.6 pA/√Hz) and low distortion (120 dBc at 1 MHz). In
applications that use a fraction of or the entire input dynamic
range and require low distortion, the AD8028-KGD-CHIPS is
an ideal choice.
Low Distortion, High Speed
Many rail-to-rail input amplifiers have an input stage that switches
from one differential pair to another as the input signal crosses a
threshold voltage, which causes distortion. The AD8028-KGD-
CHIPS has a unique feature that allows the user to select the
input crossover threshold voltage through the SELECT pin.
This feature controls the voltage at which the complementary
transistor input pairs switch. The AD8028-KGD-CHIPS also has
intrinsically low crossover distortion. With its wide supply
voltage range (2.7 V to 12 V) and wide bandwidth (190 MHz),
the AD8028-KGD-CHIPS amplifier is designed to work in a
variety of applications where speed and performance are needed on
low supply voltages. The AD8028-KGD-CHIPS has a disable
mode that is controlled via the SELECT pin.
The AD8028-KGD-CHIPS is rated to work over the industrial
temperature range of –40°C to +125°C.
Additional application and technical information can be found
in the AD8028 data sheet.
1
Protected by U.S. patent numbers 6,486,737B1; 6,518,842B1
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700 www.analog.com
AD8028-KGD-CHIPS Known Good Die
TABLE OF CONTENTS
Features ...................................................................................... 1
Applications ............................................................................... 1
General Description ................................................................. 1
Revision History ....................................................................... 2
Specifications ............................................................................. 3
Absolute Maximum Ratings .................................................... 6
REVISION HISTORY
7/12—Revision 0: Initial Version
ESD Caution .......................................................................... 6
Pad Configuration and Function Descriptions .................... 7
Outline Dimensions ................................................................. 8
Die Specifications and Assembly Recommendations ..... 8
Ordering Guide ..................................................................... 8
Rev. 0 | Page 2 of 8
Known Good Die AD8028-KGD-CHIPS
SPECIFICATIONS
VS = ±5 V at TA = 25°C, RL = 1 kΩ to midsupply, G = 1, unless otherwise noted.
Table 1.
Parameter Test Conditions/Comments Min Typ Max Status1 Unit
DYNAMIC PERFORMANCE
–3 dB Bandwidth G = 1, V
G = 1, V
Bandwidth for 0.1 dB Flatness G = 2, V
Slew Rate G = +1, V
Settling Time to 0.1% G = 2, V
NOISE/DISTORTION PERFORMANCE
Spurious-Free Dynamic Range (SFDR) fC = 1 MHz, V
fC = 5 MHz, V
Input Voltage Noise f = 100 kHz 4.3 GNT nV/√Hz
Input Current Noise f = 100 kHz 1.6 GNT pA/√Hz
Differential Gain Error NTSC, G = 2, RL = 150 Ω 0.1 GNT %
Differential Phase Error NTSC, G = 2, RL = 150 Ω 0.2 GNT Degrees
Crosstalk, Output to Output G = 1, RL = 100 Ω, V
DC PERFORMANCE
Input Offset Voltage SELECT = three-state or open, PNP active 200 GNT µV
SELECT = high NPN active 240 GNT µV
Input Offset Voltage Drift T
MIN
Input Bias Current VCM = 0 V, NPN active 4 6 Tested µA
T
MIN
VCM = 0 V, PNP active −8 −11 Tested µA
TMIN to T
Input Offset Current ±0.1 ±0.9 Tested µA
Open-Loop Gain V
OUT
INPUT CHARACTERISTICS
Input Impedance 6 GNT MΩ
Input Capacitance 2 GNT pF
Input Common-Mode Voltage Range −5.2 to 5.2 GNT V
Common-Mode Rejection Ratio VCM = ±2.5 V 110 GNT dB
SELECT PIN
Crossover Low, Selection Input Voltage Three-state < ±20 µA −3.3 to +5 GNT V
Crossover High, Selection Input Voltage −3.9 to −3.3 GNT V
Disable Input Voltage −5 to −3.9 GNT V
Disable Switching Speed 50% of input to <10% of final V
Enable Switching Speed 45 GNT ns
OUTPUT CHARACTERISTICS
Output Overdrive Recovery Time
VIN = +6 V to −6 V, G = −1 40/45 GNT ns
(Rising/Falling Edge)
Output Voltage Swing −VS + 0.20 +VS − 0.06,
Short-Circuit Output Sinking and Sourcing 120 GNT mA
Off Isolation VIN = 0.2 V p-p, f = 1 MHz, SELECT = low −49 GNT dB
Capacitive Load Drive 30% overshoot 20 GNT pF
POWER SUPPLY
Operating Range 2.7 12 GNT V
Quiescent Current/Amplifier 6.5 8.5 Tested mA
Quiescent Current (Disabled) SELECT = low
+VS 0.8 3 Tested mA
−VS −0.9 −0.6 Tested mA
Power Supply Rejection Ratio VS ± 1 V 110 GNT dB
1
GNT is guaranteed not tested.
= 0.2 V p-p 138 190 GNT MHz
OUT
= 2 V p-p 20 32 GNT MHz
OUT
= 0.2 V p-p 16 GNT MHz
OUT
= 2 V step/G = −1, V
OUT
= 2 V step 35 GNT ns
OUT
= 2 V p-p, RF = 24.9 Ω 120 GNT dBc
OUT
= 2 V p-p, RF = 24.9 Ω 80 GNT dBc
OUT
= 2 V p-p, VS = ±5 V @ 1 MHz −93 GNT dB
OUT
to T
1.50 GNT µV/°C
MAX
to T
4 GNT µA
MAX
−8 GNT µA
MAX
= 2 V step 90/100 GNT V/µs
OUT
= ±2.5 V 110 GNT dB
980 GNT ns
OUT
+V
Tested V
−V
+ 0.06
s
S
Rev. 0 | Page 3 of 8
AD8028-KGD-CHIPS Known Good Die
VS = 5 V at TA = 25°C, RL = 1 kΩ to midsupply, unless otherwise noted.
Table 2.
Parameter Test Conditions/Comments Min Typ Max Status1 Unit
DYNAMIC PERFORMANCE
−3 dB Bandwidth G = 1, V
G = 1, V
Bandwidth for 0.1 dB Flatness G = 2, V
Slew Rate G = +1, V
step
Settling Time to 0.1% G = 2, V
NOISE/DISTORTION PERFORMANCE
Spurious-Free Dynamic Range (SFDR) fC = 1 MHz, V
fC = 5 MHz, V
Input Voltage Noise f = 100 kHz 4.3 GNT nV/√Hz
Input Current Noise f = 100 kHz 1.6 GNT pA/√Hz
Differential Gain Error NTSC, G = 2, RL = 150 Ω 0.1 GNT %
Differential Phase Error NTSC, G = 2, RL = 150 Ω 0.2 GNT Degrees
Crosstalk, Output to Output G = 1, RL = 100 Ω, V
V
DC PERFORMANCE
Input Offset Voltage SELECT = three-state or open, PNP
active
SELECT = high NPN active 240 900 Tested µV
Input Offset Voltage Drift T
Input Bias Current VCM = 2.5 V, NPN active 4 GNT µA
T
VCM = 2.5 V, PNP active −8 GNT µA
T
Input Offset Current ±0.1 GNT µA
Open-Loop Gain V
INPUT CHARACTERISTICS
Input Impedance 6 GNT MΩ
Input Capacitance 2 GNT pF
Input Common-Mode Voltage Range −0.2 to +5.2 GNT V
Common-Mode Rejection Ratio VCM = 0 V to 2.5 V 105 GNT dB
SELECT PIN
Crossover Low, Selection Input Voltage Three-state < ±20 µA 1.7 to 5 GNT V
Crossover High, Selection Input Voltage 1.1 to 1.7 GNT V
Disable Input Voltage 0 to 1.1 GNT V
Disable Switching Speed 50% of input to <10% of final V
Enable Switching Speed 50 GNT ns
OUTPUT CHARACTERISTICS
Overdrive Recovery Time
VIN = −1 V to +6 V, G = −1 50/50 GNT ns
(Rising/Falling Edge)
Output Voltage Swing RL = 1 kΩ −Vs + 0.12 +VS − 0.04,
Off Isolation VIN = 0.2 V p-p, f = 1 MHz, SELECT = low −49 GNT dB
Short-Circuit Current Sinking and sourcing 105 GNT mA
Capacitive Load Drive 30% overshoot 20 GNT pF
POWER SUPPLY
Operating Range 2.7 12 GNT V
Quiescent Current/Amplifier 6 GNT mA
Quiescent Current (Disabled) SELECT = low 320 GNT µA
Power Supply Rejection Ratio VS ± 1 V 105 GNT dB
1
GNT is guaranteed not tested.
= 0.2 V p-p 131 185 GNT MHz
OUT
= 2 V p-p 18 28 GNT MHz
OUT
= 0.2 V p-p 12 GNT MHz
OUT
= 2 V step/G = −1, V
OUT
= 2 V step 40 GNT ns
OUT
= 2 V p-p, RF = 24.9 Ω 90 GNT dBc
OUT
= 2 V p-p, RF = 24.9 Ω 64 GNT dBc
OUT
= 2 V p-p,
= ±5 V @ 1 MHz
S
OUT
OUT
= 2 V
85/100 GNT V/µs
−92 GNT dB
200 800 Tested µV
to T
MIN
MIN
MIN
OUT
2 GNT µV/°C
MAX
to T
4 GNT µA
MAX
to T
−8 GNT µA
MAX
= 1 V to 4 V 105 GNT dB
1100 GNT ns
OUT
+Vs Tested V
−Vs + 0.04
Rev. 0 | Page 4 of 8
Known Good Die AD8028-KGD-CHIPS
DYNAMIC PERFORMANCE
–3 dB Bandwidth
G = 1, V
OUT
= 0.2 V p-p
125
180 GNT
MHz
G = 1, V
OUT
= 2 V p-p
19
29 GNT
MHz
Bandwidth for 0.1 dB Flatness
G = 2, V
OUT
= 0.2 V p-p
10 GNT
MHz
step
Settling Time to 0.1%
G = 2, V
OUT
= 2 V step
48 GNT
ns
NOISE/DISTORTION PERFORMANCE
@ 1 MHz
DC PERFORMANCE
active
SELECT = high NPN active
240 GNT
µV
Input Offset Voltage Drift
T
MIN
to T
MAX
2
GNT
µV/°C
Input Bias Current
VCM = 1.5 V, NPN active
4
GNT
µA
T
MIN
to T
MAX
4
GNT
µA
VCM = 1.5 V, PNP active
–8 GNT
µA
T
MIN
to T
MAX
–8 GNT
µA
Input Offset Current
±0.1 GNT
µA
Open-Loop Gain
V
OUT
= 1 V to 2 V
100 GNT
dB
INPUT CHARACTERISTICS
Input Impedance
6 GNT
MΩ
Input Capacitance
2 GNT
pF
Input Common-Mode Voltage Range
RL = 1 kΩ
–0.2 to +3.2
GNT
V
Common-Mode Rejection Ratio
VCM = 0 V to 1.5 V
100 GNT
dB
SELECT PIN
Voltage
Three-state < ±20 µA
Voltage
Disable Input Voltage
0 to 1.1
GNT
V
Disable Switching Speed
50% of input to <10% of final V
1150 GNT
ns
Enable Switching Speed
50 GNT
ns
OUTPUT CHARACTERISTICS
(Rising/Falling Edge)
–Vs + 0.03
Short-Circuit Current
Sinking and sourcing
72 GNT
mA
low
Capacitive Load Drive
30% overshoot
20 GNT
pF
POWER SUPPLY
Operating Range
2.7 12
GNT V Quiescent Current/Amplifier
6.0 GNT
mA
Quiescent Current (Disabled)
SELECT = low
300 GNT
µA
Power Supply Rejection Ratio
VS ± 1 V
100 GNT
dB
VS = 3 V at TA = 25°C, RL = 1 kΩ to midsupply, unless otherwise noted.
Table 3.
Parameter Test Conditions/Comments Min Typ Max Status1 Unit
Slew Rate G = +1, V
Spurious-Free Dynamic Range (SFDR) fC = 1 MHz, V
fC = 5 MHz, V
= 2 V step/G = –1, V
OUT
= 2 V p-p, RF = 24.9 Ω 85 GNT dBc
OUT
= 2 V p-p, RF = 24.9 Ω 64 GNT dBc
OUT
OUT
= 2 V
73/100 GNT V/µs
Input Voltage Noise f = 100 kHz 4.3 GNT nV/√Hz
Input Current Noise f = 100 kHz 1.6 GNT pA/√Hz
Differential Gain Error NTSC, G = 2, RL = 150 Ω 0.15 GNT %
Differential Phase Error NTSC, G = 2, RL = 150 Ω 0.20 GNT Degrees
Crosstalk, Output to Output G = 1, RL = 100 Ω, V
Input Offset Voltage SELECT = three-state or open, PNP
= 2 V p-p, VS = 3 V
OUT
–89 GNT dB
200 GNT µV
Crossover Low, Selection Input
Crossover High, Selection Input
Output Overdrive Recovery Time
1.1 to 1.7 GNT V
OUT
VIN = –1 V to +4 V, G = –1 55/55 GNT ns
1.7 to 3 GNT V
Output Voltage Swing RL = 1 kΩ –VS + 0.09 +VS – 0.03,
Off Isolation VIN = 0.2 V p-p, f = 1 MHz, SELECT =
–49 GNT dB
1
GNT is guaranteed not tested.
Rev. 0 | Page 5 of 8
+VS Tested V
AD8028-KGD-CHIPS Known Good Die
Common-Mode Input Voltage
±VS ± 0.5 V
ABSOLUTE MAXIMUM RATINGS
Table 4.
Parameter Rating
Supply Voltage 12.6 V
ESD CAUTION
Differential Input Voltage ±1.8 V
Storage Temperature –65°C to +125°C
Operating Temperature Range –40°C to +125°C
Junction Temperature 150°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Rev. 0 | Page 6 of 8
Known Good Die AD8028-KGD-CHIPS
10787-003
ADI Logo
1
2
3
4
5 6
7
8
9
10
2
−547
−212
−IN A
Inverting Input A.
PAD CONFIGURATION AND FUNCTION DESCRIPTIONS
Figure 1.Pad Configuration
Table 5. Pad Function Descriptions
Pad No. X-Axis Y-Axis Mnemonic Description
1 −326 +491 V
Output A.
OU TA
3 −590 −346 +IN A Noninverting Input A.
4 −592 −490 −VS Negative Supply.
5 −286 −492 Disable Control/Select A Disable Control/Select Mode A.
6 +325 −489 Disable Control/Select B Disable Control/Select Mode B.
7 +593 −490 +IN B Noninverting Input B.
8 +596 −350 −IN B Inverting Input B
9 +324 +491 V
Output B.
OUTB
10 +86 +492 +VS Positive Supply.
Rev. 0 | Page 7 of 8
AD8028-KGD-CHIPS Known Good Die
05-22-2012-A
TOP VIEW
(CIRCUIT SIDE)
2.49
1.73
1
2
3
4
5 6
7
8
9
10
Scribe Line Width
75
µm
Backside
Si
Not Applicable
©2012 Analog Devices, Inc. All rights reserved. Trademarks and
OUTLINE DIMENSIONS
Figure 2. 10-Pad Bare Die [CHIP]
Dimensions shown in millimeters
DIE SPECIFICATIONS AND ASSEMBLY RECOMMENDATIONS
Table 6. Typical Die Specifications
Parameter Value Unit
Chip Size 1420 × 1290 µm
(C-10-3)
Die Size 55.7 × 47.4 Mil
Thickness 305 µm
Bond Pads (Min Size) 76 × 76 µm
Bond Pad Composition 1% Copper Doped Aluminum %
Passivation Doped oxide/SiN Not Applicable
ESD HBM 2000 V
Table 7. Assembly Recommendations
Assembly Component Recommendation
Die Attach Ablestik 84-1LMIS R4
Bonding Method 1 mil gold
ORDERING GUIDE
Model Temperature Range Package Option
AD8028-KGD-CHIPS –40°C to +125°C Die Only
registered trademarks are the property of their respective owners.
D10787-0-7/12(0)
Rev. 0 | Page 8 of 8
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