Datasheet AD53509JSQ Datasheet (Analog Devices)

Page 1
High-Performance Driver/Comparator
a
FEATURES 250 MHz Operation Driver/Comparator and Active Load Included On-Chip Schottky Diode Bridge 52-Lead LQFP Package with Built-In Heat Sink
APPLICATIONS Automatic Test Equipment Semiconductor Test Systems Board Test Systems Instrumentation and Characterization Equipment

PRODUCT DESCRIPTION

The AD53509 is a single chip that performs the pin electronics functions of driver, comparator and active load in ATE VLSI and memory testers. In addition, a Schottky diode bridge for the active load and a VCOM buffer are included internally.
The driver is a proprietary design that features three active states: Data High Mode, Data Low Mode and Term Mode as well as an Inhibit State. This facilitates the implementation of high speed active termination. The output voltage range is –2 V to +7 V to accommodate a wide variety of test devices. The output leakage is typically less than 250 nA over the entire sig­nal range.
The dual comparator, with an input range equal to the driver output range, features built-in latches and ECL-compatible outputs. The outputs are capable of driving 50 signal lines terminated to –2 V. Signal tracking capability is upwards of 5 V/ns.
The active load can be set for up to 40 mA load current with less than a 10 µA linearity error through the entire set range. I
, IOL and the buffered VCOM are independently adjustable.
OH
On-board Schottky diodes provide high speed switching and low capacitance.
Also included on the chip is an on-board temperature sensor whose purpose is to give an indication of the surface tempera­ture of the DCL. This information can be used to measure θ and θJA or flag an alarm if proper cooling is lost. Output from the sensor is a current sink that is proportional to absolute tem­perature. The gain is trimmed to a nominal value of 1.0 µA/K. As an example, the output current can be sensed by using a 10 k resistor connected from 10 V to the THERM (IOUT) pin. A voltage drop across the resistor will be developed that equals: 10K × 1 µA/K = 10 mV/K = 2.98 V at room temperature.
JC
Active Load on a Single Chip
AD53509

FUNCTIONAL BLOCK DIAGRAM

V
VEEVEEVEEV
CC
CC
51 52 39 40 41 32
34
EE
AD53509
DRIVER
COMPARATOR
ACTIVE LOAD
+1
2,5,89,33,44,46,48
VCCO
NC = NO CONNECT
46
1.0A/K
HQGND2 HQGND
14, 26
CHDCPL
VHDCPL
V
OUT
VLDCPL
VCOMS
OUT_L
THERM
VH
VTERM
DATA
DATA
IOD
IOD
RLD
RLD
HCOMP
LEH
LEH
QH
QH
QL
QL
LEL
LEL
LCOMP
VCOMI
IOLC
IOLRTN
IOHRTN
INHL
INHL
IOHC
V
L
VCCVCCV
47
45
37
38
43
42
49
50
31
V/I
36
35
V/I
PWRGND
39nF
NC
39nF
CLDCPL
REV. A
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 World Wide Web Site: http://www.analog.com Fax: 781/326-8703 © Analog Devices, Inc., 2000
Page 2
AD53509–SPECIFICATIONS
DRIVER SPECIFICATIONS
(All specifications are at TJ = 85C 5C, VS = 11 V 3%, –VS = –6 V = 3% unless otherwise noted. All temperature coefficients are measured at TJ = 75C to 95C.)
Parameter Min Typ Max Unit Test Conditions
DIFFERENTIAL INPUT CHARACTERISTICS
(DATA to DATA, IOD to IOD, RLD to RLD)
Input Voltage –2 +3 V Differential Input Range 2 V All Digital Inputs Within a 2 V Range Bias Current –250 +250 µAV
REFERENCE INPUTS
Bias Currents –50 +50 µAV
OUTPUT CHARACTERISTICS
Logic High Range –2 +7 V DATA = H, VH = –2 V to +7 V, VL = –2 V, VT = 0 V Logic Low Range –2 +6 V DATA = L, VL = –2 V to +6 V, VH = 7 V, VT = 0 V Amplitude (V
and VL) 0.1 9 V VL = 0.0 V, VH = 0.1 V, VT = 0 V
H
Absolute Accuracy V
VH Offset –50 +50 mV DATA = H, VH = 0 V, VL = –2 V, VT = –1 V VH Gain + Linearity Error 0.3 – 5 +0.3 + 5 % of VH + mV DATA = H, VH = –1 V to +7 V, VL = –2 V, VT = –2 V VL Offset –50 +50 mV DATA = L, VL = 0 V, VH = 5 V, VT = 3 V VL Gain + Linearity Error –0.3 – 5 +0.3 + 5 % of VL + mV DATA = L, VL = –2 V to +6 V, VH = 7 V, VT = 7 V Offset TC 0.5 mV/°CV
Output Resistance
VH = –2 V 44 46 48 VL = –2 V, VT = 0 V, I VH = +7 V 44 46 48 VL = –1 V, VT = 0 V, I VL = –2 V 44 46 48 VH = 6 V, VT = 0 V, I VL = +6 V 44 46 48 VH = 7 V, VT = 0 V, I
VH = +3 V 46 VL = 0 V, VT = 0 V, I Dynamic Current Limit >100 mA C Static Current Limit –85 +85 mA Output to –2 V, VH = 7 V, VL = –1 V, VT = 0 V
V
ERM
T
Voltage Range –2 +7 V TERM MODE, VT = –2 V to +7 V, VL = 0 V, VH = 3 V
V
Offset –50 +50 mV TERM MODE, VT = 0 V, VL = 0 V, VH = 3 V
ERM
T
V
Gain + Linearity Error –0.3 +10 +0.3 +10 % of V
ERM
T
+ mV TERM MODE, VT = –2 V to +7 V, VL = 0 V, VH = 3 V
SET
Offset TC 0.5 mV/°CV Output Resistance 44 46 49 I
DYNAMIC PERFORMANCE, (VH AND VL)
Propagation Delay Time 1.5 ns Measured at 50%, VH = +400 mV, VL = –400 mV,
Propagation Delay TC 2 ps/°C Measured at 50%, VH = +400 mV, VL = –400 mV,
Delay Matching, Edge to Edge <100 ps Measured at 50%, VH = +400 mV, VL = –400 mV,
Rise and Fall Times
1 V Swing 0.42 ns Measured 20%–80%, VL = 0 V, VH = 1 V, VT = 0 V
3 V Swing 0.75 ns Measured 20%–80%, VL = 0 V, VH = 3 V, VT = 0 V
5 V Swing 1.65 ns Measured 10%–90%, VL = 0 V, VH = 5 V, VT = 0 V
9 V Swing 3.0 ns Measured 10%–90%, VL = –2 V, VH = 7 V, VT = 0 V Rise and Fall Time Temperature Coefficient
1 V Swing ±1 ps/°C Measured 20%–80%, VL = 0 V, VH = 1 V
3 V Swing ±2 ps/°C Measured 20%–80%, VL = 0 V, VH = 3 V
5 V Swing ±4 ps/°C Measured 10%–90%, VL = 0 V, VH = 5 V Overshoot and Preshoot <3 + 50 % of Step + mV VL, VH = –0.1 V, 0.1 V, VL, VH = 0.0 V, 1.0 V
Settling Time
to 15 mV <50 ns VL = 0 V, VH = 0.5 V, VT = –2 V
to 4 mV <10 µsV
= –2 V, +3 V
IN
, VH, VT = 5 V
L
= –2 V, VH = +7 V, VT = 0 V
L
= –2 V, VH = 0 V, VT = –1 V (VH Offset)
L
VL = 0 V, VH = 5 V, VT = 3 V (VL Offset)
= 0, +1, +30 mA
OUT
= 0, –1, –30 mA
OUT
= 0, 1, 30 mA
OUT
= 0, –1, –30 mA
OUT
= –30 mA (Trim Point)
= 39 nF, VH = 6 V, VL = –2 V, VT = 0 V
BYP
OUT
DATA = H and Output to 7 V, VH = 6 V, VL = –2 V, VT = 0 V, DATA = L
= 0 V, VL = 0 V, VH = 3 V
T
= +30 mA, +1.0 mA, VT = –2.0 V, VH = 3 V, VL = 0 V
OUT
I
= –30 mA, –1.0 mA, VT = +7.0 V, VH = 3 V, VL = 0 V
OUT
I
= ±30 mA, ±1.0 mA, VT = 0 V, VH = 3 V, VL = 0 V
OUT
VT = 0 V
VT = 0 V
VT = 0 V
VL, VH = 0.0 V, 3.0 V, VL, VH = 0.0 V, 5.0 V VL, VH = –2.0 V, 7.0 V
= 0 V, VH = 0.5 V, VT = –2 V
L
–2–
REV. A
Page 3
AD53509
Parameter Min Typ Max Unit Test Conditions
Delay Change vs. Pulsewidth 50 ps V
= 0 V, VH = 2 V, Pulsewidth = 2.5 ns/7.5 ns, 30 ns/90 ns
L
Minimum Pulsewidth
3 V Swing 1.4 ns V 5 V Swing 2.0 ns V
= 0 V, VH = 3 V, 90% (2.7 V) Reached, Measure @ 50%
L
= 0 V, VH = 5 V, 90% (4.5 V) Reached, Measure @ 50%
L
Toggle Rate 250 MHz VL = 0 V, VH = 5 V, VDUT > 3.0 V p-p
DYNAMIC PERFORMANCE, INHIBIT
Delay Time, Active to Inhibit 3.3 ns Measured at 50%, VH = +2 V, VL = –2 V, VT = 0 V Delay Time, Inhibit to Active 2.9 ns Measured at 50%, V
= +2 V, VL = –2 V, VT = 0 V
H
Delay Time Matching (Z) <2 ns Z = Delay Time Active to Inhibit Test (Above)—
Delay Time Inhibit to Active Test (Above)
(Of Worst Two Edges) I/O Spike 150 mV, p-p VH = 0 V, VL = 0 V, VT = 0 V Rise, Fall Time, Active to Inhibit 1.6 ns V
= +2 V, VL = –2 V (Measured 20%/80% of 1 V Output)
H
Rise, Fall Time, Inhibit to Active 1.4 ns VH = +2 V, VL = –2 V (Measured 20%/80% of 1 V Output)
DYNAMIC PERFORMANCE , V
Delay Time, VH to V Delay Time, V
to VH and V
TERM
TERM
Overshoot and Preshoot <3.0 + 75 % of Step + mV VH/VL, V
, VL to V
TERM
TERM
TERM
to V
2.5 ns Measured at 50%, VL = –1 V, VH = +1 V, V
L
2.5 ns Measured at 50%, VL = VH = +0.4 V, V = (0 V, –1 V), (0 V, –2.0 V),
TERM
TERM
= 0 V
TERM
= –0.4 V
(0 V, 6.0 V)
V
Mode Rise Time 2.2 ns VL = –2 V, VH = +2 V, V
TERM
V
Mode Fall Time 2.2 ns VL = –2 V, VH = +2 V, V
TERM
= 0 V, 20%–80%
TERM
= 0 V, 20%–80%
TERM
PSRR, DRIVE or TERM Mode 35 dB VS = VS ± 3%
Specifications subject to change without notice.
COMPARATOR SPECIFICATIONS
(All specifications are at TJ = 85C 5C. [Outputs terminated in 150 to GND, +VS = 11 V  3% –VS = 6 V 3%, VCCO = 3.3 V unless otherwise specified.] All temperatures coefficients are measured at TJ = 75C to 95C.)
Parameter Min Typ Max Unit Test Conditions
DC INPUT CHARACTERISTICS
Offset Voltage (VOS) –25 +25 mV CMV = 0 V Offset Voltage (Drift) 50 µV/°C CMV = 0 V HCOMP, LCOMP Bias Current –50 +50 µAV
= 0 V
IN
Voltage Range (VCM) –2 +7.0 V Differential Voltage (V
) 9.0 V
DIFF
Gain and Linearity –0.05 +0.05 % FSR VIN = –2 V to +7 V (9 V FSR)
LATCH ENABLE INPUTS
Logic “1” Current (IIH) 250 µA LEA, LEA, LEB, LEB = +3 V Logic “0” Current (IIL) –250 µA LEA, LEA, LEB, LEB = –2 V Logic Input Range –2 +3 V
DIGITAL OUTPUTS
Logic “1” Voltage (VOH) VCCO – 0.98 V Q or Q, 16.7 mA Load Logic “0” Voltage (VOL) VCCO – 1.5 V Q or Q, 10 mA Load Slew Rate 1 V/ns VCCO Range 0 8 V
SWITCHING PERFORMANCE
Propagation Delay
Input to Output 1.8 ns VIN = 2 V p-p, Latch Enable to Output 2 ns HCOMP = 1 V, LCOMP = 1 V Propagation Delay Temperature Coefficient 2 ps/°C
Propagation Delay Change with Respect to
Slew Rate: 0.5 V, 1.0 V, 3.0 V/ns <± 100 ps VIN = 0 V to 5 V Slew Rate: 5.0 V/ns <±350 ps VIN = 0 V to 5 V Amplitude: 1.0 V, 3.0 V, 5.0 V <± 200 ps VIN = 1.0 V/ns Equivalent Input Rise Time 450 ps VIN = 0 V to 3 V, 3 V/ns
Pulsewidth Linearity <±200 ps VIN = 0 V to 3 V, 3 V/ns, PW = 3 ns–8 ns Settling Time 25 ns Settling to ±8 mV, VIN = 1 V to 0 V Latch Timing
Input Pulsewidth 1.68 ns
Setup Time 1.0 ns
Hold Time 1.1 ns
Hysteresis 6 mV Latch Inputs Programmed for Hysteresis
Specifications subject to change without notice.
–3–REV. A
Page 4
AD53509–SPECIFICATIONS
ACTIVE LOAD SPECIFICATIONS
(All specifications are at TJ = 85C 5C, +VS = 11 V 3%, –VS = –6 V = 3% unless otherwise noted. All temperature coefficients are measured at TJ = 75C to 95C.)
Parameter Min Typ Max Unit Test Conditions
INPUT CHARACTERISTICS
INHL, INHL
Input Voltage –2 +3 V IOHC = 1 V, IOLC = 1 V, VCOM = 2 V, OUT_L = 0 V Bias Current –250 250 µA INHL, INHL = –2 V, +3 V
IOHC Current Program Range
IOH = 0 mA to –40 mA 0 4 V OUT_L = –0.7 V, +7 V
IOLC Current Program Range
IOL = 0 mA to +40 mA 0 4 V OUT_L = – 2 V, +5.7 V IOHC, IOLC Input Bias Current –300 +300 µA IOLC = 0 V, 4.0 V and IOHC = 0 V, 4.0 V IOLRTN, IOHRTN Range –2 +7 V IOL = +40 mA, IOH = –40 mA, OUT_L = –2 V, +7 V VDUT Range –2 +7 V IOL = +40 mA, IOH = –40 mA, IOUT_L–VCOMI >1.3 V VDUT Range, IOH = 0 mA to –40 mA –0.7 +7 V OUT_L –VCOM > 1.3 V VDUT Range, IOL = 0 mA to +40 mA –2 +5.7 V VCOM–VDUT > 1.3 V VCOMI Input Range –2 +7 V IOL = +40 mA, IOH = –40 mA
OUTPUT CHARACTERISTICS
Accuracy Absolute Accuracy Error, Load Current –0.3 – 100 +0.3 + 100 % I
VCOM Buffer
Offset Error –50 +50 mV IOL, IOH = 40 mA, VCOMI = 0 V, OUT_L = VCOM
Bias Current –10 +1 +10 µA VCOMI = 0 V, OUT_L = VCOM
Gain Error –0.2 +0.2 % IOL, IOH = 40 mA, VCOMI = –1 V to +6 V,
Linearity Error –10 +10 mV IOL, IOH = 40 mA, VCOMI = –1 V to +6 V,
Output Current TC <± 2 µA/°C Measured at IOH, IOL = 200 µA
DYNAMIC PERFORMANCE
Propagation Delay
± I
to Inhibit 1.9 ns VCOM = ± 2 V, IOL = +20 mA, IOH = –20 mA
OUT
Inhibit to ± I Propagation Delay Matching <1.8 ns I/O Spike 240 mV VCOM = 0 V, IOL = +20 mA, IOH = –20 mA Settling Time to 15 mV <50 ns IOL = +20 mA, IOH = –20 mA, 50 Load, to 15 mV Settling Time to 4 mV <10 µs IOL = +20 mA, IOH = –20 mA, 50 Load, to 4 mV
Specifications subject to change without notice.
OUT
2.8 ns VCOM = ± 2 V, IOL = +20 mA, IOH = 20 mA
+ µA IOL, IOH = 25 µA–40 mA, VCOM = 0 V, OUT_L = ± 2 V and
SET
IOL = 25 µA–40 mA, VCOM = +7 V, OUT_L = +5.7 V and IOH = 25 µA–40 mA, VCOM = –2 V, OUT_L = –0.7 V
VOUT = VCOM
VOUT = VCOM
–4–
REV. A
Page 5
AD53509
TOTAL FUNCTION SPECIFICATIONS
(All specifications are at TJ = 85C 5C, VS = 11 V 3%, –VS = –6 V = 3% unless otherwise noted. All temperature coefficients are
measured at TJ = 75C to 95C.)
Parameter Min Typ Max Unit Test Conditions
OUTPUT CHARACTERISTICS
Output Leakage Current, V Output Leakage Current, V Output Capacitance 8 pF Driver and Load INHIBITED
POWER SUPPLIES
Total Supply Range 17 V Positive Supply 11 V Negative Supply –6 V Positive Supply Current 280 mA Driver = INH, I Negative Supply Current 290 mA Driver = INH, I VCCO Current 65 mA VCCO = 3.3 V, Comparator Output 150 to GND Total Power Dissipation 4.8 W Driver = INH, I Temperature Sensor Gain Factor 1 µA/K R
NOTES
Connecting or shorting the decoupling pins to ground will result in the destruction of the device.
Specifications subject to change without notice.
= –1 V to +5 V –250 +250 nA
OUT
= –2 V to +7 V –500 +500 µA
OUT
Table I. Driver Truth Table
= 10 k, V
LOAD
Program = 40 mA, Load = Active
LOAD
Program = 40 mA, Load = Active
LOAD
Program = 40 mA, Load = Active
LOAD
SOURCE
= 11 V
DATA DATA IOD IOD RLD RLD OUTPUT STATE
0110XXV 1010XXV
L
H
XX0101INH XX0110V
TERM
Table II. Comparator Truth Table
OUTPUT STATES
VOUT LEH LEH LEL LEL QH QH QL QL
>HCOMP >LCOMP 1 0 1 0 1 0 1 0 >HCOMP <LCOMP 1 0 1 0 1 0 0 1 <HCOMP >LCOMP 1 0 1 0 0 1 1 0 <HCOMP <LCOMP 1 0 1 0 0 1 0 1 X X 0 1 0 1 QH (t – 1) QH (t – 1) QL (t – 1) QL (t – 1)
Table III. Active Load Truth Table
OUTPUT STATES (Including Diode Bridge)
OUT_L INHL INHL IOH IOL I(OUT_L)
<VCOM 0 1 V(IOHC) × 10 mA V(IOLC) × 10 mA IOL >VCOM 0 1 V(IOHC) × 10 mA V(IOLC) × 10 mA IOH X100 0 0
–5–REV. A
Page 6
AD53509
WARNING!
ESD SENSITIVE DEVICE

ABSOLUTE MAXIMUM RATINGS

1
Power Supply Voltage
VCC to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 V
VEE to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –8 V
VCC to VEE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 V
VCCO to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 V
PWR GND HQ GND . . . . . . . . . . . . . . . . . . . . . . . ± 0.4 V
Inputs
DATA, DATA, IOD, IOD, RLD, RLD . . . . . . +5 V, –2 V
DATA to DATA, IOD to IOD, RLD to RLD . . . . . . . ± 3 V
LEL, LEL, LEH, LEH . . . . . . . . . . . . . . . . . . . +5 V, –2 V
LEL to LEL, LEH to LEH . . . . . . . . . . . . . . . . . . . . . ± 3 V
INHL, INHL . . . . . . . . . . . . . . . . . . . . . . . . . . . +5 V, –2 V
INHL to INHL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 3 V
VH, VL, VTERM, VCOM_I to GND . . . . . . . . +8 V, –3 V
VH to VL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±10 V
(VH–VTERM) and (VTERM – VL) . . . . . . . . . . . . . ±10 V
IOHC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±6 V
IOLC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±6 V
HCOMP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +8 V, –3 V
LCOMP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +8 V, –3 V
HCOMP, LCOMP to V
. . . . . . . . . . . . . . . . . . . ±10 V
OUT
Outputs
V
Short Circuit Duration . . . . . . . . . . . . . . . . Indefinite
OUT
V
Inhibit Mode . . . . . . . . . . . . . . . . . . . . . . . +8 V, –3 V
OUT
VHDCPL . . . . . . . . Do Not Connect Except for Cap to V
VLDCPL . . . . . . . . Do Not Connect Except for Cap to V
QH, QH, QL, QL Maximum I
OUT
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Surge . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
THERM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 V, 0 V
IOHRTN, IOLRTN . . . . . . . . . . . . . . . . . . +8.5 V, –3.5 V
VCOM_S Short Circuit Duration . . . . . . . . . . . . . . . 3 sec
2
CC
EE
2
Environmental
Operating Temperature (Junction) . . . . . . . . . . . . . . . 175°C
Storage Temperature . . . . . . . . . . . . . . . . –65°C to +150°C
Lead Temperature (Soldering, 10 sec)
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Absolute maximum limits apply individually, not in combination. Exposure to absolute maximum rating condi­tions for extended periods may affect device reliability.
2
Output short circuit protection is guaranteed as long as proper heat sinking is
employed to ensure compliance with the operating temperature limits.
3
To ensure lead coplanarity (± 0.002 inches) and solderability, handling with bare
hands should be avoided and the device should be stored in environments at 24 °C ± 5°C (75°F ± 10°F) with relative humidity not to exceed 65%.
3
. . . . . . . . . . . 260°C
Table IV. Package Thermal Characteristics
Air Flow, FM JA, C/W
0 33 200 25 400 22

ORDERING GUIDE

Shipment Method
Package Quantity per Package
Model Description Shipping Container Option
AD53509JSQ 52-Lead LQFP-EDQUAD 90 SQ-52

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AD53509 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
–6–
REV. A
Page 7
PIN CONFIGURATION
AD53509
V
VCCO
QL
QL
VCCO
QH
QH
VCCO
PWRGND
LEL
LEL
LEH
LEH
CC
CC
V
V
52 51 50 49 48 43 42 41 4047 46 45 44
1
CC
PIN 1 IDENTIFIER
2
3
4
5
6
7
8
9
10
11
12
13
14 15 16 17 18 19 20 21 22 23 24 25 26
PWRGND
RLD
RLD
AD53509
HEAT SINK UP
(Not to Scale)
VH
NC
THERM
LCOMP
HCOMP
VHDCPL
HQGND2
NC = NO CONNECT
VTERM
PWRGND
OUT
V
OUT_L
IOD
PWRGND
IOLRTN
VLDCPL
EE
V
IOD
VCOMI
VCOMS
NC
V
EE
39
V
38
DATA
37
DATA
36
INHL
35
INHL
34
V PWRGND
33
32
V
31
V
30
IOLC
29
IOHC
28
HQGND
27
IOHRTN
EE
CC
EE
L
–7–REV. A
Page 8
AD53509
OUTLINE DIMENSIONS
Dimensions shown in inches and (mm).
52-Lead LQFP–EDQUAD with Integral Heat Slug
(SQ-52)
0.030 (0.75)
0.024 (0.60)
0.018 (0.45)
SEATING
PLANE
STANDOFF
0.004 (0.10) MAX
0.063 (1.60) MAX
52 40
1
13
14
0.006 (0.15)
0.002 (0.05)
0.008 (0.20)
0.004 (0.09)
CENTER FIGURES ARE TYPICAL UNLESS OTHERWISE NOTED
0.630 (16.00) SQ
0.551 (14.00) SQ
TOP VIEW
(PINS DOWN)
0.039 (1.00) BSC
0.020 (0.50)
0.017 (0.42)
0.014 (0.35)
39
27
26
0.057 (1.45)
0.055 (1.40)
0.053 (1.35)
0.270 (6.86)
DIA
7
3.5 0
C01539–0–12/00 (rev. A)
–8–
PRINTED IN U.S.A.
REV. A
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