FEATURES
256-Position, 2-Channel
Potentiometer Replacement
10 k, 50 k, 100 k
Power Shut-Down, Less than 5 A
2.7 V to 5.5 V Single Supply
2.7 V Dual Supply
3-Wire SPI-Compatible Serial Data Input
Midscale Preset During Power-On
APPLICATIONS
Mechanical Potentiometer Replacement
Stereo Channel Audio Level Control
Instrumentation: Gain, Offset Adjustment
Programmable Voltage-to-Current Conversion
Programmable Filters, Delays, Time Constants
Line Impedance Matching
Automotive Electronics Adjustment
GENERAL DESCRIPTION
The AD5207 provides dual channel, 256-position, digitally
controlled variable resistor (VR) devices that perform the same
electronic adjustment function as a potentiometer or variable
resistor. Each channel of the AD5207 contains a fixed resistor with
a wiper contact that taps the fixed resistor value at a point
determined by a digital code loaded into the SPI-compatible
serial-input register. The resistance between the wiper and either
end point of the fixed resistor varies linearly with respect to the
digital code transferred into the VR latch. The variable resistor
offers a completely programmable value of resistance, between
the A Terminal and the wiper or the B Terminal and the wiper.
The fixed A-to-B terminal resistance of 10 kΩ, 50 kΩ or 100 kΩ
has a ±1% channel-to-channel matching tolerance with a nominal temperature coefficient of 500 ppm/°C. A unique switching
circuit minimizes the high glitch inherent in traditional switched
resistor designs and avoids any make-before-break or breakbefore-make operation.
Each VR has its own VR latch, which holds its programmed
resistance value. These VR latches are updated from an internal
serial-to-parallel shift register, which is loaded from a standard
3-wire serial-input digital interface. Ten bits, to make up the
data word, are required and clocked into the serial input register.
Digital Potentiometer
AD5207
FUNCTIONAL BLOCK DIAGRAM
The first two bits are address bits. The following eight bits are
the data bits that represent the 256 steps of the resistance value.
The reason for two address bits instead of one is to be compatible
with similar products such as AD8402 so that drop-in replacement
is possible. The address bit determines the corresponding VR
latch to be loaded with the data bits during the returned positive
edge of CS strobe. A serial data output pin at the opposite end
of the serial register allows simple daisy chaining in multiple
VR applications without additional external decoding logic.
An internal reset block will force the wiper to the midscale position during every power-up condition. The SHDN pin forces an
open circuit on the A Terminal and at the same time shorts the
wiper to the B Terminal, achieving a microwatt power shutdown
state. When SHDN is returned to logic high, the previous latch
settings put the wiper in the same resistance setting prior to
shutdown. The digital interface remains active during shutdown;
code changes can be made to produce new wiper positions when
the device is resumed from shutdown.
The AD5207 is available in 1.1 mm thin TSSOP-14 package,
which is suitable for PCMCIA applications. All parts are guaranteed to operate over the extended industrial temperature range
of –40°C to +125°C.
REV. 0
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices.
VA = 1 V rms, VB = 0 V, f = 1 kHz, RAB = 10 kΩ0.003%
RAB = 10 kΩ/50 kΩ/100 kΩ, ± 1 LSB Error Band2/9/18µs
RWB = 5 kΩ, f = 1 kHz, RS = 09nV√Hz
VA = 5 V, VB = 0 V–65dB
S
N_WB
C
T
W
H
H
H
H
H
DD
–1.5LSB
SS
VDD – 0.1V
±2.2±2.7V
H
H
= 50 kΩ125kHz
= 100 kΩ71kHz
= 0, VA= 5 V,
SS
15ppm/°C
+1.5LSB
V
DD
V
45pF
70pF
10pF
0.01%/%
0.03%/%
–2–
REV. 0
Page 3
AD5207
ParameterSymbolConditionsMinTyp
1
MaxUnit
INTERFACE TIMING
CHARACTERISTICS
Applies to All Parts
Input Clock PulsewidthtCH, t
Data Setup Timet
Data Hold Timet
CLK to SDO Propagation Delay
CS Setup Timet
CS High Pulsewidtht
CLK Fall to CS Fall Hold Timet
CLK Fall to CS Rise Hold Timet
CS Rise to Clock Rise Setupt
NOTES
1
Typicals represent average readings at 25°C and VDD = 5 V, VSS = 0 V.
2
Resistor position nonlinearity error R-INL is the deviation from an ideal value measured between the maximum resistance and the minimum resistance wiper
positions. R-DNL measures the relative step change from ideal between successive tap positions. Parts are guaranteed monotonic. IW = VDD/R for both VDD = 5 V,
VSS = 0 V.
3
VAB = VDD, Wiper (VW) = No connect.
4
INL and DNL are measured at VW with the RDAC configured as a potentiometer divider similar to a voltage output D/A converter. V
specification limits of ± 1 LSB maximum are Guaranteed Monotonic operating conditions.
5
Resistor Terminals A, B, W have no limitations on polarity with respect to each other.
6
Guaranteed by design and not subject to production test.
7
Measured at the AX terminals. All AX terminals are open-circuited in shut-down mode.
8
P
is calculated from (IDD × VDD). CMOS logic level inputs result in minimum power dissipation.
DISS
9
All dynamic characteristics use VDD = 5 V, VSS = 0 V.
10
Measured at a VW pin where an adjacent VW pin is making a full-scale voltage change.
11
See timing diagram for location of measured values. All input control voltages are specified with tR = tF = 2 ns (10% to 90% of 3 V) and timed from a voltage level of
1.5 V. Switching characteristics are measured using VDD = 5 V.
12
Propagation delay depends on value of VDD, RL, and CL; see applications text.
The AD5207 contains 474 transistors. Die Size: 67 mil × 69 mil, 4623 sq. mil.
Specifications subject to change without notice.
Lead Temperature (Soldering, 10 sec) . . . . . . . . . . . . . 300°C
Thermal Resistance
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2
Max current is bounded by the maximum current handling of the switches,
maximum power dissipation of the package, and maximum applied voltage
across any two of the A, B, and W Terminals at a given resistance. Please refer to
TPC 22 for detail.
3
Package Power Dissipation = (TJ Max–TA)/θJA.
3
θ
TSSOP-14 . . . . . . . . . . . . . 206°C/W
JA,
PIN CONFIGURATION
V
W2
DGND
SHDN
SS
B2
A2
CS
1
2
3
AD5207
4
TOP VIEW
(Not to Scale)
5
6
7
14
B1
13
A1
12
W1
11
V
DD
10
CLK
9
SDO
8
SDI
PIN FUNCTION DESCRIPTIONS
Pin Mnemonic Description
1V
SS
Negative Power Supply, specified for opera-
tion from 0 V to –2.7 V.
2B2Terminal B of RDAC#2.
3A2Terminal A of RDAC#2.
4W2Wiper, RDAC#2, addr = 1
2
5DGNDDigital Ground.
6SHDNActive Low Input. Terminal A open-circuit
and Terminal B shorted to Wiper. Shut-
down controls both RDACs #1 and #2.
7CSChip Select Input, Active Low. When CS
returns high, data in the serial input register
is decoded, based on the address bit, and
loaded into the corresponding RDAC register.
8SDISerial Data Input. MSB is loaded first.
9SDOSerial Data Output. Open Drain transistor
AD5207BRU10-REEL710–40°C to +125°CTSSOP-14RU-141,000B10
AD5207BRU50-REEL750–40°C to +125°CTSSOP-14RU-141,000B50
AD5207BRU100-REEL7100–40°C to +125°CTSSOP-14RU-141,000B100
*Three lines of information appear on the device. Line 1 lists the part number; Line 2 includes branding information and the ADI logo, and Line 3 contains the
date code YYWW.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
WARNING!
the AD5207 features proprietary ESD protection circuitry, permanent damage may occur on
devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are
recommended to avoid performance degradation or loss of functionality.
–4–
ESD SENSITIVE DEVICE
REV. 0
Page 5
Typical Performance Characteristics–AD5207
CODE – Decimal
INL – LSB
224
–0.2
–0.1
0.0
0.1
0.3
1921601289664320256
–0.3
0.2
–0.4
0.4
VDD = 5.5V, VSS = 0V
TEMPERATURE – C
I
DD
SUPPLY CURRENT – A
20
–40
V
IL
= V
SS
V
IH
= V
DD
18
16
14
12
10
8
6
4
2
0
–20020406080100
VDD = 5.5V
VDD = 2.7V
0.20
0.15
0.10
0.05
0.00
RDNL – LSB
0.05
0.10
0.15
0.20
0.20
0.15
0.10
0.05
0.00
RINL – LSB
–0.05
–0.10
–0.15
–0.20
VDD = 5.5V, VSS = 0V
CODE – Decimal
1921601289664320256
TPC 1. 10 kΩ RDNL vs. Code
VDD = 5.5V, VSS = 0V
CODE – Decimal
1921601289664320256
TPC 2. 10 kΩ RINL vs. Code
224
224
TPC 4. 10 kΩ INL vs. Code
1.0
IDD @ VDD/VSS = 5V/0V
0.1
– mA
SS
/I
DD
I
0.001
0.01
ISS @ VDD/VSS = 2.5V
IDD @ VDD/VSS = 2.5V
IDD @ VDD/VSS = 3V/0V
VIH – V
TPC 5. Supply Current vs. Logic Input Voltage
5.04.03.02.01.00.0
0.3
0.2
0.1
0.0
DNL – LSB
–0.1
–0.2
REV. 0
–0.3
TPC 3. 10 kΩ DNL vs. Code
CODE – Decimal
VDD = 5.5V, VSS = 0V
224
1921601289664320256
TPC 6. Supply Current vs. Temperature
–5–
Page 6
AD5207
45
VDD = 5.5V
40
35
30
25
20
15
SHUTDOWN CURRENT – nA
10
A_SD
I
5
0
–200 20406080100
–40
TEMPERATURE – C
TPC 7. Shutdown Current vs. Temperature
160
140
120
100
–
80
ON
R
60
40
20
VDD = 3V
VDD = 5V
120
1000
900
800
700
600
– A
500
SS
/I
DD
I
400
300
200
100
I
SS
I
DD
I
@ VDD/VSS = 5V/0V
DD
I
@ VDD/VSS = 3V/0V
DD
0
10k
100k1M10M
FREQUENCY – Hz
@ VDD/V
@ VDD/V
CODE 55
= 2.5V
SS
= 2.5V
SS
H
TPC 10. 10 kΩ Supply Current vs. Clock Frequency
80
60
– dB
40
PSRR
20
+PSRR @ V
–PSRR @ V
DD
+PSRR @ V
= 3V DC 10% p-p AC
DD
CODE = 80H, VA = VDD, VB = 0V
= 5V DC 10% p-p AC
= 3V DC 10% p-p AC
DD
0
06
V
SUPPLY
– V
TPC 8. Wiper ON Resistance vs. V
1000
900
800
700
600
– A
/I
I
SS
DD
500
400
300
200
100
I
@ VDD/VSS = 3V/0V
DD
0
10k
100k1M10M
FREQUENCY – Hz
I
SS
I
@ VDD/V
DD
I
@ VDD/VSS = 5V/0V
DD
@ VDD/V
SUPPLY
CODE FF
= 2.5V
SS
= 2.5V
SS
54321
H
TPC 9. 10 kΩ Supply Current vs. Clock Frequency
0
1001k10k1M100k
TPC 11. Power Supply Rejection Ratio vs. Frequency
0
–6
–12
–18
–24
–30
GAIN – dB
–36
–42
–48
VDD = +2.7V
= –2.7V
V
SS
–54
V
= 100mV rms
A
= 25C
T
A
–60
1k10k100k1M
TPC 12. 10 kΩ Gain vs. Frequency vs. Code
FREQUENCY – Hz
DATA = 80
DATA = 40
DATA = 20
DATA = 10
DATA = 08
DATA = 04
DATA = 02
DATA = 01
V
A
FREQUENCY – Hz
H
H
H
H
H
H
H
H
OP42
–6–
REV. 0
Page 7
AD5207
FREQUENCY – Hz
–5.99
GAIN – dB
10k100k1001k
–6.00
–6.01
–6.02
–6.03
–6.04
–6.05
–6.06
–6.07
–6.08
–6.09
100k
VDD = +2.7V
V
SS
= –2.7V
V
A
= 100mV rms
DATA = 80
H
TA = 25C
V
A
OP42
V
B
= 0V
10k
50k
0
DATA = 80
–6
–12
–18
–24
–30
GAIN – dB
–36
–42
–48
VDD = +2.7V
V
= –2.7V
SS
–54
V
= 100mV rms
A
= 25C
T
A
–60
1k10k100k1M
V
A
H
DATA = 40
H
DATA = 20
H
DATA = 10
H
DATA = 08
H
DATA = 04
H
DATA = 02
H
DATA = 01
H
OP42
FREQUENCY – Hz
TPC 13. 50 kΩ Gain vs. Frequency vs. Code
0
DATA = 80
–6
–12
–18
–24
–30
GAIN – dB
–36
–42
–48
VDD = +2.7V
V
= –2.7V
SS
–54
V
= 100mV rms
A
T
= 25C
A
–60
1k10k100k1M
V
A
H
DATA = 40
H
DATA = 20
H
DATA = 10
H
DATA = 08
H
DATA = 04
H
DATA = 02
H
DATA = 01
H
OP42
FREQUENCY – Hz
TPC 16. Normalized Gain Flatness vs. Frequency
(10mV/DIV)
W
V
REV. 0
TPC 14. 100 kΩ Gain vs. Frequency vs. Code
6
4
2
0
–2
–4
GAIN – dB
–6
–8
VDD = 2.7V
= 0V
V
–10
SS
V
= 100mV rms
A
–12
DATA = 80
TA = 25C
–14
1k10k100k1M
2.7V
6
H
1.5V
100k
OP42
FREQUENCY – Hz
TPC 15. –3 dB Bandwidth
10k
50k
–7–
TPC 17. One Position Step Change at Half Scale
(50mV/DIV)V
OUT
V
(5mV/DIV)
IN
TPC 18. Large Signal Settling Time
Page 8
AD5207
2500
2000
1500
(10mV/DIV)
W
V
TPC 19. Digital Feedthrough vs. Time
120
100
80
60
40
20
0
–20
POTENTIOMETER MODE TEMPCO – ppm/C
40
0
326496128160192224256
CODE – Decimal
TPC 20.∆VWB/∆T Potentiometer Mode
Temperature Coefficient
1000
500
0
RHEOSTAT MODE TEMPCO – ppm/C
500
326496128160192224256
0
CODE – Decimal
TPC 21.∆RWB/∆T Rheostat Mode Temperature Coefficient
100.0
I
192
WB_MAX
224
256
10.0
– mA
MAX
1.0
THEORETICAL I
0.1
032
64
96
CODE – Decimal
TPC 22. I
RAB = 10k
RAB = 50k
128
vs. Code
MAX
160
–8–
REV. 0
Page 9
AD5207
OPERATION
The AD5207 provides a dual channel, 256-position digitally
controlled variable resistor (VR) device. The terms VR, RDAC,
and digital potentiometer are sometimes used interchangeably.
Changing the programmable VR settings is accomplished by
clocking in a 10-bit serial data word into the SDI (Serial Data
Input) pin. The format of this data word is two address Bits, A1
and A0. With A1 and A2 are first and second bits respectively,
followed by eight data bits B7–B0 with MSB first. Table I provides the serial register data word format. See Table III for the
AD5207 address assignments to decode the location of VR latch
receiving the serial register data in Bits B7 through B0. VR settings
can be changed one at a time in random sequence. The AD5207
presets to a midscale during power-on condition. AD5207 contains
a power shutdown SHDN pin. When activated in logic low.
Terminals A on both RDACs will be open-circuited while the
wiper terminals W
are shorted to BX. As a result, a minimum
X
amount of leakage current will be consumed in both RDACs,
and the power dissipation is negligible. During the shutdown
mode, the VR latch settings are maintained. Thus the previous resistance values remain when the devices are resumed
from the shutdown.
DIGITAL INTERFACING
The AD5207 contains a standard three-wire serial input control
interface. The three inputs are clock (CLK), chip select (CS),
and serial data input (SDI). The positive edge-sensitive CLK
input requires clean transitions to avoid clocking incorrect data
into the serial input register. Standard logic families work well.
If mechanical switches are used for product evaluation, they
should be debounced by a flip-flop or other suitable means. Figure 2 shows more detail of the internal digital circuitry. When CS
is low, the clock loads data into the serial register on each positive clock edge; see Table II.
The serial-data-output (SDO) pin contains an open drain
n-channel FET. This output requires a pull-up resistor in order
to transfer data to the next package’s SDI pin. The pull-up
resistor termination voltage may be larger than the V
supply
DD
of the AD5207 SDO output device, e.g., the AD5207 could
operate at V
= 3.3 V and the pull-up for interface to the next
DD
device could be set at 5 V. This allows for daisy chaining several
RDACs from a single processor serial-data line. The clock period
may need to be increased when using a pull-up resistor to the
SDI pin of the following devices in series. Capacitive loading at
the daisy chain node SDO–SDI between devices may add time
delay to subsequent devices. User should be aware of this potential problem in order to successfully achieve data transfer. See
Figure 3. When configuring devices for daisy-chaining, the CS
should be kept low until all the bits of every package are clocked
into their respective serial registers, ensuring that the address bit
and data bits are in the proper decoding location. This requires
20 bits of address and data complying with the data word in
Table I if two AD5207 RDACs are daisy chained. During shutdown SHDN, the SDO output pin is forced to OFF (logic high
state) to disable power dissipation in the pull-up resistor. See
Figure 4 for equivalent SDO output circuit schematic.
+V
R
P
2k
AD5207
SDOSDI
CLKCS
C
AD5207
SDOSDI
CLKCS
Figure 3. Daisy-Chain Configuration Using SDO
CS
CLK
SDO
SDI
AD5207
A0
SER
REG
D7
D6
D5
D4
D3
D2
D1
D0
RDAC
LATCH
#1
EN
ADDR
DEC
RDAC
LATCH
#2
POWER-ON RESET
Figure 2. Block Diagram
SHDN
V
A1
W1
B1
A2
W2
B2
V
Table II. Input Logic Control Truth Table
DD
CLKCSSHDNRegister Activity
LLHNo SR effect, enables SDO pin.
PLHShift one bit in from the SDI pin. MSB
first. The tenth previously entered bit
is shifted out of the SDO pin.
XPHLoad SR data into RDAC latch based
on A0 decode (Table III).
XHHNo Operation.
XHLOpen circuits all resistor A Terminals,
connects W to B, turns off SDO out-
put transistor.
NOTE
P = positive edge, X = don’t care, SR = shift register.
SS
Table III. Address Decode Table
A1A0Latch Loaded
00RDAC #1
01RDAC #2
REV. 0
–9–
Page 10
AD5207
SHDN
The data setup and data hold times in the specification table
determine the data valid time requirements. The last ten bits of
the data word entered into the serial register are held when CS
returns high and any extra bits are ignored. At the same time, when
CS goes high, it gates the address decoder enabling one of two
positive edge-triggered AD5207 RDAC latches; see Figure 5 detail.
CS
SDI
CLK
SERIAL
REGISTER
D
Q
CK
RS
INTERNAL
RS
SDO
Figure 4. Detail SDO Output Schematic of the AD5207
The target RDAC latch is loaded with the last eight bits of the
data word to complete one RDAC update. For AD5207, it
cannot update both channels simultaneously and therefore, two
separate 10-bit data words must be clocked in to change both
VR settings.
CS
CLK
SDI
AD5207
ADDR
DECODE
SERIAL
REGISTER
RDAC 1
RDAC 2
Figure 5. Equivalent Input Control Logic
All digital inputs are protected with a series input resistor and
parallel Zener ESD structure shown in Figures 6 and 7. Applies
to digital input pins CS, SDI, SDO, SHDN, and CLK. Digital
input level for Logic 1 can be anywhere from 2.4 V to 5 V
regardless of whether it is in single or dual supplies.
DIGITAL PIN
340
V
SS
LOGIC
Figure 6. ESD Protection of Digital Pins
A,B,W
V
SS
SHDN
D7
D6
D5
D4
D3
D2
D1
D0
RDAC
LATCH
AND
DECODER
R
S
R
S
R
S
R
S
Ax
Wx
Bx
Figure 8. Equivalent RDAC Circuit
PROGRAMMING THE VARIABLE RESISTOR
Rheostat Operation
The nominal resistance of the RDAC between Terminals A and
B is available with values of 10 kΩ, 50 kΩ, and 100 kΩ. The last
few digits of the part number determine the nominal resistance
value, e.g., 10 kΩ = 10; 50 kΩ = 50; and 100 kΩ = 100. The
nominal resistance (R
) of the VR has 256 contact points
AB
accessed by the wiper terminal, plus the B Terminal contact.
The 8-bit data in the RDAC latch is decoded to select one of
the 256 possible settings. Assume a 10 kΩ part is used, the
wiper’s first connection starts at the B Terminal for data 00
.
H
Since there is a 45 Ω wiper contact resistance, such connection
yields a minimum of 45 Ω resistance between Terminals W and
B. The second connection is the first tap point corresponds to
84 Ω (R
= RAB/256 + RW = 39 Ω + 45 Ω) for data 01H. The
WB
third connection is the next tap point representing 123 Ω (39 ×
2 + 45) for data 02
and so on. Each LSB value increase moves
H
the wiper up the resistor ladder until the last tap point is reached at
10006 Ω (R
– 1 LSB + RW). Figure 8 shows a simplified dia-
AB
gram of the equivalent RDAC circuit.
The general equation determining the programmable output
resistance between W and B is:
RD
()
WBABW
D
256
RR
=×+
where D is the data contained in the 8-bit RDAC latch, and R
(1)
AB
is the nominal end-to-end resistance.
For example, R
tied to W. The following output resistance R
Note that in the zero-scale condition a finite wiper resistance of
45 Ω is present. Care should be taken to limit the current flow
between W and B in this state to a maximum current of no more
than 5 mA. Otherwise, degradation or possibly destruction of
the internal switch contacts can occur.
Similar to the mechanical potentiometer, the resistance of the
RDAC between the wiper W and Terminal A also produces a
digitally controlled resistance R
. When these terminals are used,
WA
the B Terminal should be let open or tied to the wiper terminal.
Setting the resistance value for R
starts at a maximum value
WA
of resistance and decreases as the data loaded in the latch is
increased in value. The general equation for this operation is:
D
256
RD
()
WAABW
For example, when R
–
=×+
256
RR
= 10 kΩ, B terminal is either open or
AB
tied to W, the following output resistance, R
, will be set for
WA
(2)
the following RDAC latch codes.
position of the potentiometer divider. Since AD5207 is capable
for dual supplies, the general equation defining the output voltage with respect to ground for any given input voltage applied to
terminals AB is:
VD
WA B
D
V
=+
()
256
256
256
D
−
V
(3)
Operation of the digital potentiometer in the divider mode
results in more accurate operation over temperature. Unlike the
rheostat mode, the output voltage is dependent on the ratio of
and RWB and not the absolute values; therefore, the drift
R
WA
reduces to 15 ppm/°C. There is no voltage polarity constraint
between Terminals A, B, and W as long as the terminal voltage
stays within V
SS
< V
TERM
< VDD.
RDAC CIRCUIT SIMULATION MODEL
The internal parasitic capacitances and the external capacitive
loads dominate the ac characteristics of the RDACs. Configured as a potentiometer divider the –3 dB bandwidth of the
AD5207BRU10 (10 kΩ resistor) measures 600 kHz at half
scale. TPC 16 provides the large signal BODE plot characteristics of the three available resistor versions 10 kΩ and 50 kΩ.
The gain flatness versus frequency graph, TPC 16, predicts
filter applications performance. A parasitic simulation model has
been developed and is shown in Figure 9. Listing I provides a
macro model net list for the 10 kΩ RDAC:
Table V.
DR
WA
(DEC)()Output State
25584Full-Scale (R
/256 + RW)
AB
1285045Midscale
1100061 LSB
010045Zero-Scale
The typical distribution of R
from channel to channel matches
AB
within ±1%. Device-to-device matching is process-lot dependent and is possible to have ±30% variation. The change in R
AB
with temperature has a 500 ppm/°C temperature coefficient.
PROGRAMMING THE POTENTIOMETER DIVIDER
Voltage Output Operation
The digital potentiometer easily generates an output voltage
proportional to the input voltage. Let’s ignore the effect of
the wiper resistance for the moment. For example, when connecting A Terminal to 5 V and B Terminal to ground, it produces
a programmable output voltage at the wiper starting at zero
volts up to 1 LSB less than 5 V. Each LSB of voltage is equal
to the voltage applied across terminal AB divided by the 256
RDAC
A
C
10k
A
C
W
70pF
W
B
C
B
CB = 45pFCA = 45pF
Figure 9. RDAC Circuit Simulation Model for RDAC = 10 k
Listing I. Macro Model Net List for RDAC
.PARAM D=255, RDAC=10E3
*
.SUBCKT DPOT (A,W)
*
CA A 0 45E-12
RAW A W {(1-D/256)*RDAC+50}
CW W 0 70E-12
RBW W B {D/256*RDAC+50}
CB B 0 45E-12
*
.ENDS DPOT
Ω
REV. 0
–11–
Page 12
AD5207
W
B
VSS TO V
DD
DUT
I
SW
CODE =
H
R
SW
=
0.1V
I
SW
0.1V
+
–
TEST CIRCUITS
Figures 10 to 18 define the test conditions used in product
Specification table.
DUT
V+ = V
DD
1 LSB = V+/2
A
V+
W
B
N
V
MS
Figure 10. Potentiometer Divider Nonlinearity Error Test
Circuit (INL, DNL)
NO CONNECT
DUT
A
B
W
I
W
V
MS
Figure 11. Resistor Position Nonlinearity Error (Rheostat
Operation; R-INL, R-DNL)
DUT
V
MS2
A
W
B
V
W
IW = VDD/R
V
MS1
NOMINAL
5V
OFFSET
GND
V
IN
A DUT
OFFSET BIAS
OP279
W
B
V
OUT
Figure 15. Noninverting Gain Test Circuit
+15V
W
OP42
–15V
V
OUT
OFFSET
GND
A
V
DUT
IN
B
2.5V
Figure 16. Gain vs. Frequency Test Circuit
RW = [V
Figure 12. Wiper Resistance Test Circuit
V
A
V
DD
V+
A
W
B
V
MS
V+ = V
PSRR (dB) = 20 LOG
PSS (%/%) =
Figure 13. Power Supply Sensitivity Test Circuit
DD
MS1
10%
– V
MS2
VMS%
V
DD
]/I
W
Figure 17. Incremental ON Resistance Test Circuit
NC
V
DD
DUT
V
MS
V
DD
%
V
GND
SS
NC
NC = NO CONNECT
I
CM
A
W
B
V
CM
Figure 18. Common-Mode Leakage Current Test Circuit
(PSS, PSSR)
OFFSET
GND
V
IN
ADUT
B
W
OFFSET BIAS
OP279
5V
V
OUT
Figure 14. Inverting Gain Test Circuit
–12–
REV. 0
Page 13
AD5207
DIGITAL POTENTIOMETER FAMILY SELECTION GUIDE
NumberResolution Power
of VRsTerminalInterface Nominal(NumberSupply
PartperVoltageDataResistanceof WiperCurrent
Number Package RangeControl(k⍀)Positions)(IDD)PackagesComments
*Future product, consult factory for latest status.
Latest Digital Potentiometer Information available at www.analog.com/support/standard_linear/selection_guides/dig_pot.html
REV. 0
–13–
Page 14
AD5207
OUTLINE DIMENSIONS
Dimensions shown in inches and (mm)
14-Lead TSSOP
(RU-14)
0.201 (5.10)
0.193 (4.90)
PIN 1
0.006 (0.15)
0.002 (0.05)
SEATING
PLANE
14
0.0256
(0.65)
BSC
8
71
0.0433 (1.10)
MAX
0.0118 (0.30)
0.0075 (0.19)
0.177 (4.50)
0.169 (4.30)
0.256 (6.50)
0.246 (6.25)
0.0079 (0.20)
0.0035 (0.090)
8
0
0.028 (0.70)
0.020 (0.50)
–14–
REV. 0
Page 15
–15–
Page 16
C01885–1.5–4/01(0)
–16–
PRINTED IN U.S.A.
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