256-position
End-to-end resistance 5 kΩ, 10 kΩ, 50 kΩ, 100 kΩ
Compact SOT-23-8 (2.9 mm × 3 mm) package
SPI compatible interface
Power-on preset to midscale
Single supply 2.7 V to 5.5 V
Low temperature coefficient 45 ppm/°C
Low power, I
Wide operating temperature –40°C
Evaluation board available
APPLICATIONS
Mechanical potentiometer replacement in new designs
Transducer adjustment of pressure, temperature, position,
chemical, and optical sensors
RF amplifier biasing
Automotive electronics adjustment
Gain control and offset adjustment
GENERAL OVERVIEW
The AD5160 provides a compact 2.9 mm × 3 mm packaged
solution for 256-position adjustment applications. These devices
perform the same electronic adjustment function as mechanical
potentiometers or variable resistors, with enhanced resolution,
solid-state reliability, and superior low temperature coefficient
performance.
The wiper settings are controllable through an SPI compatible
digital interface. The resistance between the wiper and either
end point of the fixed resistor varies linearly with respect to the
digital code transferred into the RDAC latch.
= 8 µA
DD
to +125°C
Digital Potentiometer
AD5160
FUNCTIONAL BLOCK DIAGRAM
V
DD
CS
SDI
CLK
SPI INTERFACE
WIPER
REGISTER
GND
Figure 1.
PIN CONFIGURATION
V
GND
CLK
W
DD
1
2
AD5160
3
TOP VIEW
(Not to Scale)
4
Figure 2.
A
8
B
7
6
CS
5
SDI
A
Operating from a 2.7 V to 5.5 V power supply and consuming
less than 5 µA allows for usage in portable battery-operated
applications.
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable.
However, no responsibility is assumed by Analog Devices for its use, nor for any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication
or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective companies.
Note:
The terms digital potentiometer, VR, and RDAC are used interchangeably.
(VDD = 5 V ± 10%, or 3 V ± 10%; VA = +VDD; VB = 0 V; –40°C < TA < +125°C; unless otherwise noted.)
Table 1.
Parameter Symbol Conditions Min Typ1 Max Unit
DC CHARACTERISTICS—RHEOSTAT MODE
Resistor Differential Nonlinearity2 R-DNL RWB, V
Resistor Integral Nonlinearity2 R-INL RWB, V
Nominal Resistor Tolerance3 ∆RAB T
Resistance Temperature Coefficient ∆RAB/∆T VAB = VDD, Wiper = no connect 45 ppm/°C
Wiper Resistance RW 50 120 Ω
DC CHARACTERISTICS—POTENTIOMETER DIVIDER MODE (Specifications apply to all VRs)
Resolution N 8 Bits
Differential Nonlinearity4 DNL –1.5 ±0.1 +1.5 LSB
Integral Nonlinearity4 INL –1.5 ±0.6 +1.5 LSB
Voltage Divider Temperature Coefficient ∆VW/∆T Code = 0x80 15 ppm/°C
Full-Scale Error V
Zero-Scale Error V
Code = 0xFF –6 –2.5 0 LSB
WFSE
Code = 0x00 0 +2 +6 LSB
WZSE
RESISTOR TERMINALS
Voltage Range5 V
Capacitance6 A, B C
GND VDD V
A,B,W
A,B
Capacitance6 W CW
Shutdown Supply Current7 I
DD_SD
Common-Mode Leakage ICM V
DIGITAL INPUTS AND OUTPUTS
Input Logic High VIH 2.4 V
Input Logic Low VIL 0.8 V
Input Logic High VIH V
Input Logic Low VIL V
Input Current IIL V
Input Capacitance6 C
5 pF
IL
POWER SUPPLIES
Power Supply Range V
2.7 5.5 V
DD RANGE
Supply Current IDD V
Power Dissipation8 P
V
DISS
Power Supply Sensitivity PSS
DYNAMIC CHARACTERISTICS
6, 9
Bandwidth –3dB BW_5K RAB = 5 kΩ, Code = 0x80 1.2 MHz
Total Harmonic Distortion THDW VA = 1 V rms, VB = 0 V, f = 1 kHz 0.05 %
VW Settling Time tS
(VDD = 5 V ± 10%, or 3 V ± 10%; VA = VDD; VB = 0 V; –40°C < TA < +125°C; unless otherwise noted.)
Table 2.
Parameter Symbol Conditions Min Typ1 Max Unit
DC CHARACTERISTICS—RHEOSTAT MODE
Resistor Differential Nonlinearity2 R-DNL RWB, V
Resistor Integral Nonlinearity2 R-INL RWB, V
Nominal Resistor Tolerance3 ∆RAB T
Resistance Temperature Coefficient ∆RAB/∆T
Wiper Resistance RW V
DC CHARACTERISTICS—POTENTIOMETER DIVIDER MODE (Specifications apply to all VRs)
Resolution N 8 Bits
Differential Nonlinearity4 DNL –1 ±0.1 +1 LSB
Integral Nonlinearity4 INL –1 ±0.3 +1 LSB
Voltage Divider Temperature Coefficient ∆VW/∆T Code = 0x80 15 ppm/°C
Full-Scale Error V
Zero-Scale Error V
Code = 0xFF –3 –1 0 LSB
WFSE
Code = 0x00 0 1 3 LSB
WZSE
RESISTOR TERMINALS
Voltage Range5 V
Capacitance6 A, B C
GND VDD V
A,B,W
A,B
Capacitance6 W CW
Shutdown Supply Current7 I
DD_SD
Common-Mode Leakage ICM V
DIGITAL INPUTS AND OUTPUTS
Input Logic High VIH 2.4 V
Input Logic Low VIL 0.8 V
Input Logic High VIH V
Input Logic Low VIL V
Input Current IIL V
Input Capacitance6 C
(VDD = +5V ± 10%, or +3V ± 10%; VA = VDD; VB = 0 V; –40°C < TA < +125°C; unless otherwise noted.)
Table 3.
Parameter Symbol Conditions Min Typ1 Max Unit
SPI INTERFACE TIMING CHARACTERISTICS
Clock Frequency f
Input Clock Pulsewidth tCH, tCL Clock level high or low 20 ns
Data Setup Time tDS 5 ns
Data Hold Time tDH 5 ns
CS Setup Time
CS High Pulsewidth
CLK Fall to CS Fall Hold Time
CLK Fall to CS Rise Hold Time
CS Rise to Clock Rise Setup
NOTES
1
Typical specifications represent average readings at +25°C and VDD = 5 V.
2
Resistor position nonlinearity error R-INL is the deviation from an ideal value measured between the maximum resistance and the minimum resistance wiper
positions. R-DNL measures the relative step change from ideal between successive tap positions. Parts are guaranteed monotonic.
3
VAB = VDD, Wiper (VW) = no connect.
4
INL and DNL are measured at VW with the RDAC configured as a potentiometer divider similar to a voltage output D/A converter. VA = VDD and VB = 0 V.
DNL specification limits of ±1 LSB maximum are guaranteed monotonic operating conditions.
5
Resistor terminals A, B, W have no limitations on polarity with respect to each other.
6
Guaranteed by design and not subject to production test.
7
Measured at the A terminal. The A terminal is open circuited in shutdown mode.
8
P
is calculated from (IDD × VDD). CMOS logic level inputs result in minimum power dissipation.
DISS
9
All dynamic characteristics use VDD = 5 V.
10
See timing diagram for location of measured values. All input control voltages are specified with tR = tF = 2 ns (10% to 90% of 3 V) and timed from a voltage
level of 1.5 V.
6, 10
(Specifications Apply to All Parts)
CLK
t
15 ns
CSS
40 ns
t
CSW
t
0 ns
CSH0
t
0 ns
CSH1
t
10 ns
CS1
25 MHz
ABSOLUTE MAXIMUM RATINGS1
(TA = +25°C, unless otherwise noted.)
Table 4.
Parameter Value
VDD to GND –0.3 V to +7 V
VA, VB, VW to GND VDD
1
I
±20 mA
MAX
Digital Inputs and Output Voltage to GND 0 V to +7 V
Operating Temperature Range –40°C to +125°C
Maximum Junction Temperature (T
) 150°C
JMAX
Storage Temperature –65°C to +150°C
Lead Temperature (Soldering, 10 sec) 300°C
Thermal Resistance2 θJA: MSOP-10 230°C/W
NOTES
1
Maximum terminal current is bounded by the maximum current handling of
the switches, maximum power dissipation of the package, and maximum
applied voltage across any two of the A, B, and W terminals at a given
resistance.
2
Package power dissipation = (T
– TA)/θJA.
JMAX
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or
any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Figure 26. Large Signal Settling Time, Code 0xFF–0x00
Rev. 0 | Page 9 of 16
Page 10
AD5160
TEST CIRCUITS
Figure 27 to Figure 35 illustrate the test circuits that define the
test conditions used in the product specification tables.
DUT
A
V+
W
B
Figure 27. Test Circuit for Potentiometer Divider Nonlinearity Error (INL, DNL)
NO CONNECT
DUT
A
W
B
Figure 28. Test Circuit for Resistor Position Nonlinearity Error
(Rheostat Operation; R-INL, R-DNL)
DUT
V
MS2
A
B
V
W
Figure 29. Test Circuit for Wiper Resistance
V
A
V
DD
A
V+
W
B
V+ = V
1LSB = V+/2
V
IW= VDD/R
W
V
RW= [V
MS1
V+ = V
PSRR (dB) = 20 LOG
PSS (%/ %) =
V
MS
DD
N
V
MS
I
W
MS
NOMINAL
– V
]/I
MS2
W
MS1
10%
DD
∆V
MS
( )
∆V
DD
%
∆V
MS
%
∆V
DD
5V
OFFSET
GND
V
IN
A
OFFSET
BIAS
DUT
OP279
W
B
Figure 32. Test Circuit for Noninverting Gain
OFFSET
GND
A
V
DUT
IN
2.5V
B
+15V
W
AD8610
–15V
Figure 33. Test Circuit for Gain vs. Frequency
0.1V
RSW=
I
DUT
B
W
I
SW
CODE = 0x00
VSS TO V
DD
SW
0.1V
Figure 34. Test Circuit for Incremental ON Resistance
NC
V
DD
V
SS
DUT
GND
A
W
B
I
CM
V
OUT
V
OUT
V
CM
Figure 30. Test Circuit for Power Supply Sensitivity (PSS, PSSR)
DUT
OFFSET
BIAS
B
5V
W
OP279
V
OUT
OFFSET
GND
A
V
IN
Figure 31. Test Circuit for Inverting Gain
Rev. 0 | Page 10 of 16
NC
NC = NO CONNECT
Figure 35. Test Circuit for Common-Mode Leakage current
Page 11
AD5160
V
SPI INTERFACE
Table 5. AD5160 Serial Data-Word Format
B7 B6 B5 B4 B3 B2 B1 B0
D7 D6 D5 D4 D3 D2 D1 D0
MSB LSB
7
2
2
0
1
SDI
0
1
CLK
0
1
CS
0
1
OUT
0
Figure 36. AD5160 SPI Interface Timing Diagram
D6 D5 D4 D3 D2 D1 D0
D7
RDAC REGISTER LOAD
= 5 V, VB = 0 V, VW = V
(V
A
OUT
)
1
SDI
(DATA IN)
CLK
CS
VOUT
0
1
0
t
1
0
V
DD
0
Figure 37. SPI Interface Detailed Timing Diagram (V
DxDx
CSHO
t
CSS
t
t
CH
DS
t
CL
t
CH
t
CSH1
t
CS1
t
CSW
t
S
±1LSB
= 5 V, VB = 0 V, VW = V
A
OUT
)
Rev. 0 | Page 11 of 16
Page 12
AD5160
−
OPERATION
The AD5160 is a 256-position digitally controlled variable
resistor (VR) device.
The general equation determining the digitally programmed
output resistance between W and B is
An internal power-on preset places the wiper at midscale
during power-on, which simplifies the fault condition recovery
at power-up.
PROGRAMMING THE VARIABLE RESISTOR
Rheostat Operation
The nominal resistance of the RDAC between terminals A and
B is available in 5 kΩ, 10 kΩ, 50 kΩ, and 100 kΩ. The final two
or three digits of the part number determine the nominal
resistance value, e.g., 10 kΩ = 10; 50 kΩ = 50. The nominal
resistance (R
the wiper terminal, plus the B terminal contact. The 8-bit data
in the RDAC latch is decoded to select one of the 256 possible
settings. Assume a 10 kΩ part is used, the wiper’s first
connection starts at the B terminal for data 0x00. Since there is a
60 Ω wiper contact resistance, such connection yields a
minimum of 60 Ω resistance between terminals W and B. The
second connection is the first tap point, which corresponds to
99 Ω (R
The third connection is the next tap point, representing 177 Ω
(2 × 39 Ω + 60 Ω) for data 0x02, and so on. Each LSB data value
increase moves the wiper up the resistor ladder until the last tap
point is reached at 9961 Ω (R
a simplified diagram of the equivalent RDAC circuit where the
last resistor string will not be accessed; therefore, there is 1 LSB
less of the nominal resistance at full scale in addition to the
wiper resistance.
) of the VR has 256 contact points accessed by
AB
= RAB/256 + RW = 39 Ω + 60 Ω) for data 0x01.
WB
– 1 LSB + RW). Figure 38 shows
AB
A
R
S
D7
D6
D5
D4
D3
D2
D1
D0
DECODER
Figure 38. AD5160 Equivalent RDAC Circuit
RDAC
LATCH
AND
R
S
R
S
W
R
S
B
D
DR
)(
where
WB
D
is the decimal equivalent of the binary code loaded in
256
AB
the 8-bit RDAC register,
R
is the wiper resistance contributed by the on resistance of
W
(1)
RR
+×=
W
R
is the end-to-end resistance, and
AB
the internal switch.
In summary, if R
circuited, the following output resistance R
Note that in the zero-scale condition a finite wiper resistance of
60 Ω is present. Care should be taken to limit the current flow
between W and B in this state to a maximum pulse current of
no more than 20 mA. Otherwise, degradation or possible
destruction of the internal switch contact can occur.
Similar to the mechanical potentiometer, the resistance of the
RDAC between the wiper W and terminal A also produces a
digitally controlled complementar y resistance R
. When these
WA
terminals are used, the B terminal can be opened. Setting the
resistance value for R
starts at a maximum value of resistance
WA
and decreases as the data loaded in the latch increases in value.
The general equation for this operation is
256
256
D
ABWA
DR
=
)(
= 10 kΩ and the B terminal open circuited, the
For R
AB
following output resistance R
(2)
RR
+×
W
will be set for the indicated
WA
RDAC latch codes.
Table 7. Codes and Corresponding R
Resistance
WA
D (Dec.) RWA (Ω) Output State
255 99 Full Scale
128 5,060 Midscale
1 9,961 1 LSB
0 10,060 Zero Scale
Typical device to device matching is process lot dependent and
may vary by up to ±30%. Since the resistance element is
processed in thin film technology, the change in R
AB
with
temperature has a very low 45 ppm/°C temperature coefficient.
Rev. 0 | Page 12 of 16
Page 13
AD5160
D
PROGRAMMING THE POTENTIOMETER DIVIDER
Voltage Output Operation
The digital potentiometer easily generates a voltage divider at
wiper-to-B and wiper-to-A proportional to the input voltage at
A-to-B. Unlike the polarity of V
to GND, which must be
DD
positive, voltage across A-B, W-A, and W-B can be at either
polarity.
If ignoring the effect of the wiper resistance for approximation,
connecting the A terminal to 5 V and the B terminal to ground
produces an output voltage at the wiper-to-B starting at 0 V up
to 1 LSB less than 5 V. Each LSB of voltage is equal to the
voltage applied across terminal AB divided by the 256 positions
of the potentiometer divider. The general equation defining the
output voltage at V
with respect to ground for any valid input
W
voltage applied to terminals A and B is
D
DV
W
V
)(
256
A
D
256
−
(3)
256
V
B
+=
For a more accurate calculation, which includes the effect of
wiper resistance, V
)(+= (4)
DV
W
, can be found as
W
)(
DR
WB
V
256
A
WA
256
)(
DR
V
B
Operation of the digital potentiometer in the divider mode
results in a more accurate operation over temperature. Unlike
the rheostat mode, the output voltage is dependent mainly on
the ratio of the internal resistors R
and RWB and not the
WA
absolute values. Therefore, the temperature drift reduces to
15 ppm/°C.
SPI COMPATIBLE 3-WIRE SERIAL BUS
The AD5160 contains a 3-wire SPI compatible digital interface
CS
(SDI,
first. The format of the word is shown in Table 5.
The positive-edge sensitive CLK input requires clean transitions
to avoid clocking incorrect data into the serial input register.
Standard logic families work well. If mechanical switches are
used for product evaluation, they should be debounced by a
flip-flop or other suitable means. When
loads data into the serial register on each positive clock edge
(see Figure 36).
The data setup and data hold times in the specification table
determine the valid timing requirements. The AD5160 uses an
8-bit serial input data register word that is transferred to the
internal RDAC register when the
Extra MSB bits are ignored.
, and CLK). The 8-bit s erial word must be loaded MSB
CS
is low, the clock
CS
line returns to logic high.
ESD PROTECTION
All digital inputs are protected with a series input resistor and
parallel Zener ESD structures shown in Figure 39 and Figure 40.
CS
This applies to the digital input pins SDI, CLK, and
340Ω
Figure 39. ESD Protection of Digital Pins
A,B,W
Figure 40. ESD Protection of Resistor Terminals
LOGIC
V
SS
V
SS
.
TERMINAL VOLTAGE OPERATING RANGE
The AD5160 VDD and GND power supply defines the boundary
conditions for proper 3-terminal digital potentiometer
operation. Supply signals present on terminals A, B, and W that
exceed V
or GND will be clamped by the internal forward
DD
biased diodes (see Figure 41).
V
D
A
W
B
V
SS
Figure 41. Maximum Terminal Voltages Set by V
DD
and V
SS
POWER-UP SEQUENCE
Since the ESD protection diodes limit the voltage compliance at
terminals A, B, and W (see Figure 41), it is important to power
/GND before applying any voltage to terminals A, B, and W;
V
DD
otherwise, the diode will be forward biased such that V
powered unintentionally and may affect the rest of the user’s
circuit. The ideal power-up sequence is in the following order:
GND, V
powering V
, digital inputs, and then V
DD
, VB, VW, and the digital inputs is not important as
A
long as they are powered after V
DD
. The relative order of
A/B/W
/GND.
will be
DD
Rev. 0 | Page 13 of 16
Page 14
AD5160
LAYOUT AND POWER SUPPLY BYPASSING
It is a good practice to employ compact, minimum lead length
layout design. The leads to the inputs should be as direct as
possible with a minimum conductor length. Ground paths
should have low resistance and low inductance.
V
DD
+
C1C3
10
µ
F0.1µF
V
DD
AD5160
Similarly, it is also a good practice to bypass the power supplies
with quality capacitors for optimum stability. Supply leads to the
device should be bypassed with disc or chip ceramic capacitors
of 0.01 µF to 0.1 µF. Low ESR 1 µF to 10 µF tantalum or
electrolytic capacitors should also be applied at the supplies to
minimize any transient disturbance and low frequency ripple
(see Figure 42). Note that the digital ground should also be
joined remotely to the analog ground at one point to minimize
the ground bounce.
GND
Figure 42. Power Supply Bypassing
Rev. 0 | Page 14 of 16
Page 15
AD5160
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
PIN CONFIGURATION
1
W
2
V
DD
3
GND
4
CLK
AD5160
TOP VIEW
(Not to Scale)
Figure 43.
PIN FUNCTION DESCRIPTIONS
A
8
B
7
6
CS
5
SDI
Table 8.
Pin Name Description
1 W W Terminal.
2 VDD Positive Power Supply.
3 GND Digital Ground.
4 CLK Serial Clock Input. Positive edge triggered.
5 SDI Serial Data Input.
6
CS
Chip Select Input, Active Low. When
high, data will be loaded into the DAC register.
7 B B Terminal.
8 A A Terminal.
CS
returns
Rev. 0 | Page 15 of 16
Page 16
AD5160
OUTLINE DIMENSIONS
2.90 BSC
847
1.60 BSC
PIN 1
1.30
1.15
0.90
0.15 MAX
13562
1.95
BSC
0.38
0.22
COMPLIANT TO JEDEC STANDARDS MO-178BA
2.80 BSC
0.65 BSC
1.45 MAX
SEATING
PLANE
0.22
0.08
Figure 44. 8-Lead Small Outline Transistor Package [SOT-23]
(RJ-8)
Dimensions shown in millimeters
8°
4°
0°
0.60
0.45
0.30
ORDERING GUIDE
Model RAB (Ω) Temperature Package Description Package Option Branding
AD5160BRJ5-R2 5k –40°C to +125°C SOT-23-8 RJ-8 D08
AD5160BRJ5-RL7 5k –40°C to +125°C SOT-23-8 RJ-8 D08
AD5160BRJ10-R2 10k –40°C to +125°C SOT-23-8 RJ-8 D09
AD5160BRJ10-RL7 10k –40°C to +125°C SOT-23-8 RJ-8 D09
AD5160BRJ50-R2 50k –40°C to +125°C SOT-23-8 RJ-8 D0A
AD5160BRJ50-RL7 50k –40°C to +125°C SOT-23-8 RJ-8 D0A
AD5160BRJ100-R2 100k –40°C to +125°C SOT-23-8 RJ-8 D0B
AD5160BRJ100-RL7 100k –40°C to +125°C SOT-23-8 RJ-8 D0B
AD5160EVAL See Note 1 Evaluation Board
1
The evaluation board is shipped with the 10 kΩ RAB resistor option; however, the board is compatible with all available resistor value options.
The AD5160 contains 2532 transistors. Die size: 30.7 mil × 76.8 mil = 2,358 sq. mil.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the
human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.