Datasheet AD5160 Datasheet (Analog Devices)

Page 1
W
B
256-Position SPI Compatible

FEATURES

256-position End-to-end resistance 5 kΩ, 10 kΩ, 50 kΩ, 100 kΩ Compact SOT-23-8 (2.9 mm × 3 mm) package SPI compatible interface Power-on preset to midscale Single supply 2.7 V to 5.5 V Low temperature coefficient 45 ppm/°C Low power, I Wide operating temperature –40°C Evaluation board available

APPLICATIONS

Mechanical potentiometer replacement in new designs Transducer adjustment of pressure, temperature, position,
chemical, and optical sensors RF amplifier biasing Automotive electronics adjustment Gain control and offset adjustment

GENERAL OVERVIEW

The AD5160 provides a compact 2.9 mm × 3 mm packaged solution for 256-position adjustment applications. These devices perform the same electronic adjustment function as mechanical potentiometers or variable resistors, with enhanced resolution, solid-state reliability, and superior low temperature coefficient performance.
The wiper settings are controllable through an SPI compatible digital interface. The resistance between the wiper and either end point of the fixed resistor varies linearly with respect to the digital code transferred into the RDAC latch.
= 8 µA
DD
to +125°C
Digital Potentiometer
AD5160

FUNCTIONAL BLOCK DIAGRAM

V
DD
CS
SDI
CLK
SPI INTERFACE
WIPER
REGISTER
GND
Figure 1.

PIN CONFIGURATION

V
GND
CLK
W
DD
1
2
AD5160
3
TOP VIEW
(Not to Scale)
4
Figure 2.
A
8
B
7
6
CS
5
SDI
A
Operating from a 2.7 V to 5.5 V power supply and consuming less than 5 µA allows for usage in portable battery-operated applications.
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective companies.
Note: The terms digital potentiometer, VR, and RDAC are used interchangeably.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 www.analog.com Fax: 781.326.8703 © 2003 Analog Devices, Inc. All rights reserved.
Page 2
AD5160

TABLE OF CONTENTS

Electrical Characteristics—5 kΩ Version ...................................... 3
ESD Protection ........................................................................... 13
Electrical Characteristics—10 kΩ, 50 kΩ, 100 kΩ Versions ....... 4
Timing Characteristics—5 kΩ, 10 kΩ, 50 kΩ, 100 kΩ Versions 5
Absolute Maximum Ratings ...........................................................5
Typical Performance Characteristics ............................................. 6
Test Circuits..................................................................................... 10
SPI Interface .................................................................................... 11
Operation......................................................................................... 12
Programming the Variable Resistor......................................... 12
Programming the Potentiometer Divider............................... 13
SPI Compatible 3-Wire Serial Bus ........................................... 13

REVISION HISTORY

Revision 0: Initial Version
Terminal Voltage Operating Range.......................................... 13
Power-Up Sequence ................................................................... 13
Layout and Power Supply Bypassing ....................................... 14
Pin Configuration and Function Descriptions........................... 15
Pin Configuration ...................................................................... 15
Pin Function Descriptions ........................................................ 15
Outline Dimensions....................................................................... 16
Ordering Guide .......................................................................... 16
ESD Caution................................................................................ 16
Rev. 0 | Page 2 of 16
Page 3
AD5160
ELECTRICAL CHARACTERISTICS—5 kΩ VERSION
(VDD = 5 V ± 10%, or 3 V ± 10%; VA = +VDD; VB = 0 V; –40°C < TA < +125°C; unless otherwise noted.)
Table 1.
Parameter Symbol Conditions Min Typ1 Max Unit
DC CHARACTERISTICS—RHEOSTAT MODE Resistor Differential Nonlinearity2 R-DNL RWB, V Resistor Integral Nonlinearity2 R-INL RWB, V Nominal Resistor Tolerance3 ∆RAB T Resistance Temperature Coefficient ∆RAB/∆T VAB = VDD, Wiper = no connect 45 ppm/°C Wiper Resistance RW 50 120 Ω DC CHARACTERISTICS—POTENTIOMETER DIVIDER MODE (Specifications apply to all VRs) Resolution N 8 Bits Differential Nonlinearity4 DNL –1.5 ±0.1 +1.5 LSB Integral Nonlinearity4 INL –1.5 ±0.6 +1.5 LSB Voltage Divider Temperature Coefficient ∆VW/∆T Code = 0x80 15 ppm/°C Full-Scale Error V Zero-Scale Error V
Code = 0xFF –6 –2.5 0 LSB
WFSE
Code = 0x00 0 +2 +6 LSB
WZSE
RESISTOR TERMINALS Voltage Range5 V Capacitance6 A, B C
GND VDD V
A,B,W
A,B
Capacitance6 W CW
Shutdown Supply Current7 I
DD_SD
Common-Mode Leakage ICM V DIGITAL INPUTS AND OUTPUTS Input Logic High VIH 2.4 V Input Logic Low VIL 0.8 V Input Logic High VIH V Input Logic Low VIL V Input Current IIL V Input Capacitance6 C
5 pF
IL
POWER SUPPLIES Power Supply Range V
2.7 5.5 V
DD RANGE
Supply Current IDD V Power Dissipation8 P
V
DISS
Power Supply Sensitivity PSS
DYNAMIC CHARACTERISTICS
6, 9
Bandwidth –3dB BW_5K RAB = 5 kΩ, Code = 0x80 1.2 MHz Total Harmonic Distortion THDW VA = 1 V rms, VB = 0 V, f = 1 kHz 0.05 % VW Settling Time tS
Resistor Noise Voltage Density e
RWB = 2.5 kΩ, RS = 0 6 nV/√Hz
N_WB
= no connect –1.5 ±0.1 +1.5 LSB
A
= no connect –4 ±0.75 +4 LSB
A
= 25°C –30 +30 %
A
f = 1 MHz, measured to GND,
45 pF
Code = 0x80 f = 1 MHz, measured to GND,
60 pF
Code = 0x80 VDD = 5.5 V 0.01 1 µA
= VB = VDD/2 1 nA
A
= 3 V 2.1 V
DD
= 3 V 0.6 V
DD
= 0 V or 5 V ±1 µA
IN
= 5 V or VIL = 0 V 3 8 µA
IH
= 5 V or VIL = 0 V, VDD = 5 V 0.2 mW
IH
= +5 V ± 10%,
∆V
DD
±0.02 ±0.05 %/%
Code = Midscale
= 5 V, VB = 0 V, ±1 LSB error
V
A
1 µs
band
Rev. 0 | Page 3 of 16
Page 4
AD5160
ELECTRICAL CHARACTERISTICS—10 kΩ, 50 kΩ, 100 kΩ VERSIONS
(VDD = 5 V ± 10%, or 3 V ± 10%; VA = VDD; VB = 0 V; –40°C < TA < +125°C; unless otherwise noted.)
Table 2.
Parameter Symbol Conditions Min Typ1 Max Unit
DC CHARACTERISTICS—RHEOSTAT MODE Resistor Differential Nonlinearity2 R-DNL RWB, V Resistor Integral Nonlinearity2 R-INL RWB, V Nominal Resistor Tolerance3 ∆RAB T Resistance Temperature Coefficient ∆RAB/∆T
Wiper Resistance RW V DC CHARACTERISTICS—POTENTIOMETER DIVIDER MODE (Specifications apply to all VRs) Resolution N 8 Bits Differential Nonlinearity4 DNL –1 ±0.1 +1 LSB Integral Nonlinearity4 INL –1 ±0.3 +1 LSB Voltage Divider Temperature Coefficient ∆VW/∆T Code = 0x80 15 ppm/°C Full-Scale Error V Zero-Scale Error V
Code = 0xFF –3 –1 0 LSB
WFSE
Code = 0x00 0 1 3 LSB
WZSE
RESISTOR TERMINALS Voltage Range5 V Capacitance6 A, B C
GND VDD V
A,B,W
A,B
Capacitance6 W CW
Shutdown Supply Current7 I
DD_SD
Common-Mode Leakage ICM V DIGITAL INPUTS AND OUTPUTS Input Logic High VIH 2.4 V Input Logic Low VIL 0.8 V Input Logic High VIH V Input Logic Low VIL V Input Current IIL V Input Capacitance6 C
5 pF
IL
POWER SUPPLIES Power Supply Range V
2.7 5.5 V
DD RANGE
Supply Current IDD V Power Dissipation8 P
DISS
Power Supply Sensitivity PSS
DYNAMIC CHARACTERISTICS
6, 9
Bandwidth –3dB BW
Total Harmonic Distortion THDW
VW Settling Time (10 kΩ/50 kΩ/100 kΩ) tS
Resistor Noise Voltage Density e
R
N_WB
= no connect –1 ±0.1 +1 LSB
A
= no connect –2 ±0.25 +2 LSB
A
= 25°C –30 +30 %
A
V
AB
= VDD,
45 ppm/°C
Wiper = no connect
= 5 V 50 120
DD
f = 1 MHz, measured to
45 pF
GND, Code = 0x80 f = 1 MHz, measured to
60 pF
GND, Code = 0x80 VDD = 5.5 V 0.01 1 µA
= VB = VDD/2 1 nA
A
= 3 V 2.1 V
DD
= 3 V 0.6 V
DD
= 0 V or 5 V ±1 µA
IN
= 5 V or VIL = 0 V 3 8 µA
IH
= 5 V or VIL = 0 V,
V
IH
V
= 5 V
DD
= +5 V ± 10%,
∆V
DD
0.2 mW
±0.02 ±0.05 %/%
Code = Midscale
= 10 kΩ/50 kΩ/100 kΩ,
R
AB
600/100/40 kHz
Code = 0x80
=1 V rms, VB = 0 V,
V
A
f = 1 kHz, R
= 5 V, VB = 0 V,
V
A
= 10 kΩ
AB
0.05 %
2 µs
±1 LSB error band
= 5 kΩ, RS = 0 9 nV/√Hz
WB
Rev. 0 | Page 4 of 16
Page 5
AD5160
TIMING CHARACTERISTICS—5 kΩ, 10 kΩ, 50 kΩ, 100 kΩ VERSIONS
(VDD = +5V ± 10%, or +3V ± 10%; VA = VDD; VB = 0 V; –40°C < TA < +125°C; unless otherwise noted.)
Table 3.
Parameter Symbol Conditions Min Typ1 Max Unit
SPI INTERFACE TIMING CHARACTERISTICS Clock Frequency f Input Clock Pulsewidth tCH, tCL Clock level high or low 20 ns Data Setup Time tDS 5 ns Data Hold Time tDH 5 ns
CS Setup Time CS High Pulsewidth CLK Fall to CS Fall Hold Time CLK Fall to CS Rise Hold Time CS Rise to Clock Rise Setup
NOTES
1
Typical specifications represent average readings at +25°C and VDD = 5 V.
2
Resistor position nonlinearity error R-INL is the deviation from an ideal value measured between the maximum resistance and the minimum resistance wiper
positions. R-DNL measures the relative step change from ideal between successive tap positions. Parts are guaranteed monotonic.
3
VAB = VDD, Wiper (VW) = no connect.
4
INL and DNL are measured at VW with the RDAC configured as a potentiometer divider similar to a voltage output D/A converter. VA = VDD and VB = 0 V.
DNL specification limits of ±1 LSB maximum are guaranteed monotonic operating conditions.
5
Resistor terminals A, B, W have no limitations on polarity with respect to each other.
6
Guaranteed by design and not subject to production test.
7
Measured at the A terminal. The A terminal is open circuited in shutdown mode.
8
P
is calculated from (IDD × VDD). CMOS logic level inputs result in minimum power dissipation.
DISS
9
All dynamic characteristics use VDD = 5 V.
10
See timing diagram for location of measured values. All input control voltages are specified with tR = tF = 2 ns (10% to 90% of 3 V) and timed from a voltage
level of 1.5 V.
6, 10
(Specifications Apply to All Parts)
CLK
t
15 ns
CSS
40 ns
t
CSW
t
0 ns
CSH0
t
0 ns
CSH1
t
10 ns
CS1
25 MHz

ABSOLUTE MAXIMUM RATINGS1

(TA = +25°C, unless otherwise noted.)
Table 4.
Parameter Value
VDD to GND –0.3 V to +7 V VA, VB, VW to GND VDD
1
I
±20 mA
MAX
Digital Inputs and Output Voltage to GND 0 V to +7 V Operating Temperature Range –40°C to +125°C Maximum Junction Temperature (T
) 150°C
JMAX
Storage Temperature –65°C to +150°C Lead Temperature (Soldering, 10 sec) 300°C Thermal Resistance2 θJA: MSOP-10 230°C/W
NOTES
1
Maximum terminal current is bounded by the maximum current handling of the switches, maximum power dissipation of the package, and maximum applied voltage across any two of the A, B, and W terminals at a given resistance.
2
Package power dissipation = (T
– TA)/θJA.
JMAX
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Rev. 0 | Page 5 of 16
Page 6
AD5160

TYPICAL PERFORMANCE CHARACTERISTICS

1.0
0.8
0.6
0.4
0.2
0
–0.2
–0.4
RHEOSTAT MODE INL (LSB)
–0.6
–0.8
–1.0
3209664 128 160 192 224 256
Figure 3. R-INL vs. Code vs. Supply Voltages
CODE (Decimal)
5V
3V
1.0
0.8
0.6
0.4
0.2
0
–0.2
–0.4
–0.6
POTENTIOMETER MODE DNL (LSB)
–0.8
–1.0
64
32096
Figure 6. DNL vs. Code, V
128 160 192 224 256
CODE (Decimal)
= 5 V
DD
–40°C +25°C +85°C
+125°C
1.0
0.8
0.6
0.4
0.2
0
–0.2
–0.4
RHEOSTAT MODE DNL (LSB)
–0.6
–0.8
–1.0
3209664 128 160 192 224 256
CODE (Decimal)
5V 3V
Figure 4. R-DNL vs. Code vs. Supply Voltages
1.0
0.8
0.6
0.4
0.2
0
–0.2
–0.4
–0.6
POTENTIOMETER MODE INL (LSB)
–0.8
–1.0
3209664 128 160 192 224 256
Figure 5. INL vs. Code, V
CODE (Decimal)
DD
= 5 V
_
40°C
+25°C
+85°C
+125°C
1.0
0.8
0.6
0.4
0.2
0
–0.2
–0.4
–0.6
POTENTIOMETER MODE INL (LSB)
–0.8
–1.0
3209664 128 160 192 224 256
CODE (Decimal)
5V 3V
Figure 7. INL vs. Code vs. Supply Voltages
1.0
0.8
0.6
0.4
0.2
0
–0.2
–0.4
–0.6
POTENTIOMETER MODE DNL(LSB)
–0.8
–1.0
3209664 128 160 192 224 256
CODE (Decimal)
5V
3V
Figure 8. DNL vs. Code vs. Supply Voltages
Rev. 0 | Page 6 of 16
Page 7
AD5160
6
1.0
0.8
0.6
0.4
0.2
0
–0.2
–0.4
RHEOSTAT MODE INL (LSB)
–0.6
–0.8
–1.0
64
32096
Figure 9. R-INL vs. Code, V
128 160 192 224 25
CODE (Decimal)
= 5 V
DD
–40
°C +25°C +85°C
+125°C
2.5
2.0
1.5
1.0
ZSE, ZERO-SCALE ERROR (µA)
0.5
0
0 40 80 120–40
0 40 80 120–40
TEMPERATURE (°C)
Figure 12. Zero-Scale Error vs. Temperature
VDD = 5.5V
VDD = 2.7V
1.0
0.8
0.6
0.4
0.2
0
–0.2
–0.4
RHEOSTAT MODE DNL (LSB)
–0.6
–0.8
–1.0
FSE, FULL-SCALE ERROR (LSB)
3209664 128 160 192 224 256
Figure 10. R-DNL vs. Code, V
2.5
2.0
1.5
1.0
0.5
CODE (Decimal)
DD
= 5 V
_
40°C +25°C +85°C
+125°C
= 2.7V
V
DD
= 5.5V
V
DD
10
1
SUPPLY CURRENT (µA)
DD
I
0.1
70
60
50
40
30
20
SHUTDOWN CURRENT (nA)
A
I
10
VDD = 5.5V
V
= 2.7V
DD
0 40 80 120–40
TEMPERATURE (°C)
Figure 13. Supply Current vs. Temperature
VDD = 5V
0
0 40 80 120–40
0 40 80 120–40
TEMPERATURE (°C)
Figure 11. Full-Scale Error vs. Temperature
0
0
40 80 120–40
TEMPERATURE (°C)
Figure 14. Shutdown Current vs. Temperature
Rev. 0 | Page 7 of 16
Page 8
AD5160
g
/
g
VWB/
200
150
100
50
0
RHEOSTAT MODE TEMPCO (ppm/°C)
–50
160
140
120
100
80
60
40
20
POTENTIOMETER MODE TEMPCO (ppm/°C)
–20
REF LEVEL
0.000dB 0
–6
–12
–18
–24
–30
–36
–42
–48
–54
–60
START 1 000.000Hz STOP 1 000 000.000Hz
3209664 128 160 192 224 256
ure 15. Rheostat Mode Tempco ∆R
Fi
CODE (Decimal)
0
3209664 128 160 192 224 256
ure 16. Potentiometer Mode Tempco ∆
Fi
CODE (Decimal)
/DIV
6.000dB
0x80
0x40
0x20
0x10
0x08
0x04
0x02 0x01
1k
10k 100k 1M
MARKER 1 000 000.000Hz MAG (A/R) –8.918dB
Figure 17. Gain vs. Frequency vs. Code, R
∆T vs. Code
WB
∆T vs. Code
= 5 kΩ
AB
REF LEVEL
0.000dB 0
–6
–12
–18
–24
–30
–36
–42
–48
–54
–60
1k 10k 100k 1M
START 1 000.000Hz STOP 1 000 000.000Hz
Figure 18. Gain vs. Frequency vs. Code, R
REF LEVEL
0.000dB 0
–6
–12
–18
–24
–30
–36
–42
–48
–54
–60
1k
START 1 000.000Hz STOP 1 000 000.000Hz
Figure 19. Gain vs. Frequency vs. Code, R
REF LEVEL
0.000dB 0
–6
–12
–18
–24
–30
–36
–42
–48
–54
–60
1k
START 1 000.000Hz STOP 1 000 000.000Hz
Figure 20. Gain vs. Frequency vs. Code, R
/DIV
6.000dB
0x80
0x40
0x20
0x10
0x08
0x04
0x02
0x01
/DIV
6.000dB
0x80
0x40
0x20
0x10
0x08
0x04
0x02
0x01
10k 100k 1M
/DIV
6.000dB
0x80
0x40
0x20
0x10
0x08
0x04
0x02
0x01
10k 100k 1M
MARKER 510 634.725Hz MAG (A/R) –9.049dB
= 10 kΩ
AB
MARKER 100 885.289Hz MAG (A/R) –9.014dB
= 50 kΩ
AB
MARKER 54 089.173Hz MAG (A/R) –9.052dB
= 100 kΩ
AB
Rev. 0 | Page 8 of 16
Page 9
AD5160
REF LEVEL –5.000dB
–5.5
–6.0
–6.5
–7.0
–7.5
–8.0
–8.5
–9.0
R = 100k
–9.5
–10.0
–10.5
10k 100k 1M 10M
START 1 000.000Hz STOP 1 000 000.000Hz
60
40
PSRR (dB)
20
/DIV
0.500dB
5k– 1.026 MHz 10k– 511 MHz 50k– 101 MHz 100k– 54 MHz
R = 50k
R = 10k
R = 5k
Figure 21. –3 dB Bandwidth @ Code = 0x80
CODE = 0x80, VA= VDD, VB = 0V
PSRR @ VDD = 3V DC ± 10% p-p AC
1
2
Ch 1 200mV
B
Ch 2 5.00 V
W
B
M 100ns A CH2 3.00 V
W
VW
CLK
Figure 24. Digital Feedthrough
VA = 5V VB = 0V
1
2
VW
CS
PSRR @ VDD = 5V DC ± 10% p-p AC
0
Figure 22. PSRR v s. Frequency
900
800
700
600
500
(µA)
400
DD
I
300
200
100
0 10k
Figure 23. I
10k100 100k 1M1k
FREQUENCY (Hz)
VDD= 5V
CODE = 0x55
CODE = 0xFF
100k 1M 10M
FREQUENCY (Hz)
vs. Frequency
DD
Ch 1 100mV
B
Ch 2 5.00 V
W
B
M 200ns A CH1 152mV
W
Figure 25. Midscale Glitch, Code 0x80–0x7F
VA = 5V V
= 0V
B
1
2
Ch 1 5.00V
B
Ch 2 5.00 V
W
B
M 200ns A CH1 3.00 V
W
VW
CS
Figure 26. Large Signal Settling Time, Code 0xFF–0x00
Rev. 0 | Page 9 of 16
Page 10
AD5160

TEST CIRCUITS

Figure 27 to Figure 35 illustrate the test circuits that define the test conditions used in the product specification tables.
DUT
A
V+
W
B
Figure 27. Test Circuit for Potentiometer Divider Nonlinearity Error (INL, DNL)
NO CONNECT
DUT
A
W
B
Figure 28. Test Circuit for Resistor Position Nonlinearity Error
(Rheostat Operation; R-INL, R-DNL)
DUT
V
MS2
A
B
V
W
Figure 29. Test Circuit for Wiper Resistance
V
A
V
DD
A
V+
W
B
V+ = V 1LSB = V+/2
V
IW= VDD/R
W
V
RW= [V
MS1
V+ = V
PSRR (dB) = 20 LOG
PSS (%/ %) =
V
MS
DD
N
V
MS
I
W
MS
NOMINAL
– V
]/I
MS2
W
MS1
10%
DD
V
MS
( )
V
DD
%
V
MS
%
V
DD
5V
OFFSET
GND
V
IN
A
OFFSET BIAS
DUT
OP279
W
B
Figure 32. Test Circuit for Noninverting Gain
OFFSET
GND
A
V
DUT
IN
2.5V
B
+15V
W
AD8610
–15V
Figure 33. Test Circuit for Gain vs. Frequency
0.1V
RSW=
I
DUT
B
W
I
SW
CODE = 0x00
VSS TO V
DD
SW
0.1V
Figure 34. Test Circuit for Incremental ON Resistance
NC
V
DD
V
SS
DUT
GND
A
W
B
I
CM
V
OUT
V
OUT
V
CM
Figure 30. Test Circuit for Power Supply Sensitivity (PSS, PSSR)
DUT
OFFSET BIAS
B
5V
W
OP279
V
OUT
OFFSET
GND
A
V
IN
Figure 31. Test Circuit for Inverting Gain
Rev. 0 | Page 10 of 16
NC
NC = NO CONNECT
Figure 35. Test Circuit for Common-Mode Leakage current
Page 11
AD5160
V

SPI INTERFACE

Table 5. AD5160 Serial Data-Word Format
B7 B6 B5 B4 B3 B2 B1 B0
D7 D6 D5 D4 D3 D2 D1 D0 MSB LSB
7
2
2
0
1
SDI
0
1
CLK
0
1
CS
0
1
OUT
0
Figure 36. AD5160 SPI Interface Timing Diagram
D6 D5 D4 D3 D2 D1 D0
D7
RDAC REGISTER LOAD
= 5 V, VB = 0 V, VW = V
(V
A
OUT
)
1
SDI
(DATA IN)
CLK
CS
VOUT
0
1
0
t
1
0
V
DD
0
Figure 37. SPI Interface Detailed Timing Diagram (V
Dx Dx
CSHO
t
CSS
t
t
CH
DS
t
CL
t
CH
t
CSH1
t
CS1
t
CSW
t
S
±1LSB
= 5 V, VB = 0 V, VW = V
A
OUT
)
Rev. 0 | Page 11 of 16
Page 12
AD5160

OPERATION

The AD5160 is a 256-position digitally controlled variable resistor (VR) device.
The general equation determining the digitally programmed output resistance between W and B is
An internal power-on preset places the wiper at midscale during power-on, which simplifies the fault condition recovery at power-up.

PROGRAMMING THE VARIABLE RESISTOR

Rheostat Operation

The nominal resistance of the RDAC between terminals A and B is available in 5 kΩ, 10 kΩ, 50 kΩ, and 100 kΩ. The final two or three digits of the part number determine the nominal resistance value, e.g., 10 kΩ = 10; 50 kΩ = 50. The nominal resistance (R the wiper terminal, plus the B terminal contact. The 8-bit data in the RDAC latch is decoded to select one of the 256 possible settings. Assume a 10 kΩ part is used, the wiper’s first connection starts at the B terminal for data 0x00. Since there is a 60 Ω wiper contact resistance, such connection yields a minimum of 60 Ω resistance between terminals W and B. The second connection is the first tap point, which corresponds to 99 Ω (R The third connection is the next tap point, representing 177 Ω (2 × 39 Ω + 60 Ω) for data 0x02, and so on. Each LSB data value increase moves the wiper up the resistor ladder until the last tap point is reached at 9961 Ω (R a simplified diagram of the equivalent RDAC circuit where the last resistor string will not be accessed; therefore, there is 1 LSB less of the nominal resistance at full scale in addition to the wiper resistance.
) of the VR has 256 contact points accessed by
AB
= RAB/256 + RW = 39 Ω + 60 Ω) for data 0x01.
WB
– 1 LSB + RW). Figure 38 shows
AB
A
R
S
D7 D6 D5 D4 D3 D2 D1 D0
DECODER
Figure 38. AD5160 Equivalent RDAC Circuit
RDAC
LATCH
AND
R
S
R
S
W
R
S
B
D
DR
)(
where
WB
D
is the decimal equivalent of the binary code loaded in
256
AB
the 8-bit RDAC register,
R
is the wiper resistance contributed by the on resistance of
W
(1)
RR
+×=
W
R
is the end-to-end resistance, and
AB
the internal switch.
In summary, if R circuited, the following output resistance R
= 10 kΩ and the A terminal is open
AB
will be set for the
WB
indicated RDAC latch codes.
Table 6. Codes and Corresponding R
Resistance
WB
D (Dec.) RWB (Ω) Output State
255 9,961 Full Scale (RAB – 1 LSB + RW) 128 5,060 Midscale 1 99 1 LSB 0 60 Zero Scale (Wiper Contact Resistance)
Note that in the zero-scale condition a finite wiper resistance of 60 Ω is present. Care should be taken to limit the current flow between W and B in this state to a maximum pulse current of no more than 20 mA. Otherwise, degradation or possible destruction of the internal switch contact can occur.
Similar to the mechanical potentiometer, the resistance of the RDAC between the wiper W and terminal A also produces a digitally controlled complementar y resistance R
. When these
WA
terminals are used, the B terminal can be opened. Setting the resistance value for R
starts at a maximum value of resistance
WA
and decreases as the data loaded in the latch increases in value. The general equation for this operation is
256
256
D
ABWA
DR
=
)(
= 10 kΩ and the B terminal open circuited, the
For R
AB
following output resistance R
(2)
RR
+×
W
will be set for the indicated
WA
RDAC latch codes.
Table 7. Codes and Corresponding R
Resistance
WA
D (Dec.) RWA (Ω) Output State
255 99 Full Scale 128 5,060 Midscale 1 9,961 1 LSB 0 10,060 Zero Scale
Typical device to device matching is process lot dependent and may vary by up to ±30%. Since the resistance element is processed in thin film technology, the change in R
AB
with
temperature has a very low 45 ppm/°C temperature coefficient.
Rev. 0 | Page 12 of 16
Page 13
AD5160
D

PROGRAMMING THE POTENTIOMETER DIVIDER

Voltage Output Operation

The digital potentiometer easily generates a voltage divider at wiper-to-B and wiper-to-A proportional to the input voltage at A-to-B. Unlike the polarity of V
to GND, which must be
DD
positive, voltage across A-B, W-A, and W-B can be at either polarity.
If ignoring the effect of the wiper resistance for approximation, connecting the A terminal to 5 V and the B terminal to ground produces an output voltage at the wiper-to-B starting at 0 V up to 1 LSB less than 5 V. Each LSB of voltage is equal to the voltage applied across terminal AB divided by the 256 positions of the potentiometer divider. The general equation defining the output voltage at V
with respect to ground for any valid input
W
voltage applied to terminals A and B is
D
DV
W
V
)(
256
A
D
256
(3)
256
V
B
+=
For a more accurate calculation, which includes the effect of wiper resistance, V
)( += (4)
DV
W
, can be found as
W
)(
DR
WB
V
256
A
WA
256
)(
DR
V
B
Operation of the digital potentiometer in the divider mode results in a more accurate operation over temperature. Unlike the rheostat mode, the output voltage is dependent mainly on the ratio of the internal resistors R
and RWB and not the
WA
absolute values. Therefore, the temperature drift reduces to 15 ppm/°C.

SPI COMPATIBLE 3-WIRE SERIAL BUS

The AD5160 contains a 3-wire SPI compatible digital interface
CS
(SDI, first. The format of the word is shown in Table 5.
The positive-edge sensitive CLK input requires clean transitions to avoid clocking incorrect data into the serial input register. Standard logic families work well. If mechanical switches are used for product evaluation, they should be debounced by a flip-flop or other suitable means. When loads data into the serial register on each positive clock edge (see Figure 36).
The data setup and data hold times in the specification table determine the valid timing requirements. The AD5160 uses an 8-bit serial input data register word that is transferred to the internal RDAC register when the Extra MSB bits are ignored.
, and CLK). The 8-bit s erial word must be loaded MSB
CS
is low, the clock
CS
line returns to logic high.

ESD PROTECTION

All digital inputs are protected with a series input resistor and parallel Zener ESD structures shown in Figure 39 and Figure 40.
CS
This applies to the digital input pins SDI, CLK, and
340
Figure 39. ESD Protection of Digital Pins
A,B,W
Figure 40. ESD Protection of Resistor Terminals
LOGIC
V
SS
V
SS
.

TERMINAL VOLTAGE OPERATING RANGE

The AD5160 VDD and GND power supply defines the boundary conditions for proper 3-terminal digital potentiometer operation. Supply signals present on terminals A, B, and W that exceed V
or GND will be clamped by the internal forward
DD
biased diodes (see Figure 41).
V
D
A
W
B
V
SS
Figure 41. Maximum Terminal Voltages Set by V
DD
and V
SS

POWER-UP SEQUENCE

Since the ESD protection diodes limit the voltage compliance at terminals A, B, and W (see Figure 41), it is important to power
/GND before applying any voltage to terminals A, B, and W;
V
DD
otherwise, the diode will be forward biased such that V powered unintentionally and may affect the rest of the user’s circuit. The ideal power-up sequence is in the following order: GND, V powering V
, digital inputs, and then V
DD
, VB, VW, and the digital inputs is not important as
A
long as they are powered after V
DD
. The relative order of
A/B/W
/GND.
will be
DD
Rev. 0 | Page 13 of 16
Page 14
AD5160

LAYOUT AND POWER SUPPLY BYPASSING

It is a good practice to employ compact, minimum lead length layout design. The leads to the inputs should be as direct as possible with a minimum conductor length. Ground paths should have low resistance and low inductance.
V
DD
+
C1C3
10
µ
F 0.1µF
V
DD
AD5160
Similarly, it is also a good practice to bypass the power supplies with quality capacitors for optimum stability. Supply leads to the device should be bypassed with disc or chip ceramic capacitors of 0.01 µF to 0.1 µF. Low ESR 1 µF to 10 µF tantalum or electrolytic capacitors should also be applied at the supplies to minimize any transient disturbance and low frequency ripple (see Figure 42). Note that the digital ground should also be joined remotely to the analog ground at one point to minimize the ground bounce.
GND
Figure 42. Power Supply Bypassing
Rev. 0 | Page 14 of 16
Page 15
AD5160

PIN CONFIGURATION AND FUNCTION DESCRIPTIONS

PIN CONFIGURATION

1
W
2
V
DD
3
GND
4
CLK
AD5160
TOP VIEW
(Not to Scale)
Figure 43.

PIN FUNCTION DESCRIPTIONS

A
8
B
7
6
CS
5
SDI
Table 8.
Pin Name Description
1 W W Terminal. 2 VDD Positive Power Supply. 3 GND Digital Ground. 4 CLK Serial Clock Input. Positive edge triggered. 5 SDI Serial Data Input. 6
CS
Chip Select Input, Active Low. When
high, data will be loaded into the DAC register. 7 B B Terminal. 8 A A Terminal.
CS
returns
Rev. 0 | Page 15 of 16
Page 16
AD5160

OUTLINE DIMENSIONS

2.90 BSC
847
1.60 BSC
PIN 1
1.30
1.15
0.90
0.15 MAX
1 3562
1.95 BSC
0.38
0.22
COMPLIANT TO JEDEC STANDARDS MO-178BA
2.80 BSC
0.65 BSC
1.45 MAX
SEATING PLANE
0.22
0.08
Figure 44. 8-Lead Small Outline Transistor Package [SOT-23]
(RJ-8)
Dimensions shown in millimeters
8° 4° 0°
0.60
0.45
0.30

ORDERING GUIDE

Model RAB (Ω) Temperature Package Description Package Option Branding
AD5160BRJ5-R2 5k –40°C to +125°C SOT-23-8 RJ-8 D08 AD5160BRJ5-RL7 5k –40°C to +125°C SOT-23-8 RJ-8 D08 AD5160BRJ10-R2 10k –40°C to +125°C SOT-23-8 RJ-8 D09 AD5160BRJ10-RL7 10k –40°C to +125°C SOT-23-8 RJ-8 D09 AD5160BRJ50-R2 50k –40°C to +125°C SOT-23-8 RJ-8 D0A AD5160BRJ50-RL7 50k –40°C to +125°C SOT-23-8 RJ-8 D0A AD5160BRJ100-R2 100k –40°C to +125°C SOT-23-8 RJ-8 D0B AD5160BRJ100-RL7 100k –40°C to +125°C SOT-23-8 RJ-8 D0B AD5160EVAL See Note 1 Evaluation Board
1
The evaluation board is shipped with the 10 kΩ RAB resistor option; however, the board is compatible with all available resistor value options.
The AD5160 contains 2532 transistors. Die size: 30.7 mil × 76.8 mil = 2,358 sq. mil.

ESD CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
© 2003 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective companies.
C03434–0–5/03(0)
Rev. 0 | Page 16 of 16
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