Datasheet ACT-S512K8N-055P4Q, ACT-S512K8N-055F4Q, ACT-S512K8N-055F3Q, ACT-S512K8N-045P4Q, ACT-S512K8N-045F4Q Datasheet (ACT)

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eroflex Circuit Technology - Advanced Multichip Modules © SCD1664 REV C 5/10/00

Features

ACT–S512K8 High Speed

4 Megabit Monolithic SRAM

■ Low Power Monolithic CMOS 512K x 8 SRAM

■ Full Military (-55°C to +125°C) Temperature Range

■ Input and Output TTL Compatible Design

■ Fast 17,20,25,35,45 & 55ns Maximum Access Times

■ +5 V Power Supply

■ MIL-PRF-38534 Compliant MCMs Available

■ Industry Standard Pinouts

■ Packaging – Hermetic Ceramic

● 36 Lead, .92" x .51" x .13" Flat Package (FP), Aeroflex code# "F3"

● 36 Lead, .92" x .43" x .184" Small Outline J lead (CSOJ),

Aeroflex code# "F4"
(.155 MAX thickness available, contact factory for details)

● 32 Lead, 1.6" x .60" x .20" Dual-in-line (DIP), Aeroflex code# "P4"

■ DESC SMD# 5962–95613 Released(F3,F4,P4)

Block Diagram – Flat Package(F3,F16), DIP(P4) & CSOJ(F4)

CE

WE

OE

A0 – A18

Vss
Vcc

512Kx8

8

I/O0-7

CIRCUIT TECHNOLOGY

General Description

The ACT–S512K8 is a high
speed, 4 Megabit CMOS
Monolithic SRAM designed for
full temperature range military,
space, or high reliability mass
memory and fast cache
applications.

The MCM is input and output
TTL compatible. Writing is
executed when the write
enable (WE
(CE

) inputs are low and output
enable (OE) is high.Readingis
accomplished when WE
and CE
Access time grades of 17ns,
20ns, 25ns, 35ns, 45ns and
55ns maximum are standard.

The +5 Volt power supply
version is standard and +3.3
Volt lower power model is a
future optional product.

) and chip enable

is high

and OE are both low.

The products are designed

Pin Description

0-7 Data I/O

I/O

0–18 Address Inputs

A

for operation over the
temperature range of -55°C to
+125°C and under the full
military environment. A DESC

WE

CE
OE

CC Power Supply

V

SS Ground

V

NC Not Connected

Write Enable

Chip Enable

Output Enable

Standard Military Drawing
(SMD) number is released.

The ACT-S512K8 is
manufactured in Aeroflex’s
80,000 square foot
MIL-PRF-38534 certified
facility in Plainview, N.Y.

Absolute Maximum Ratings

Symbol Parameter MINIMUM MAXIMUM Units

-55 +125 °C

-65 +150 °C

- 1.1 W

-0.5 V

+ 0.5 V

CC

-0.5 +7.0 V

- +150 °C

T

V

T

STG

P
V

CC

T

C

Case Operating Temp.
Storage Temperature

D

G

Maximum Package Power Dissipation
Maximum Signal Voltage to Ground
Power Supply Voltage

J

Junction Temperature

Recommended Operating Conditions

Symbol Parameter Minimum Maximum Units

V

CC

V

IH

V

IL

T

A

Power Supply Voltage
Input High Voltage
Input Low Voltage
Operating Temp. (Mil)

+4.5 +5.5 V
+2.2 V

+ 0.3 V

CC

-0.5 +0.8 V

-55 +125 °C

Truth Table

Mode CE OE WE Data I/O Power

Standby H X X High Z Standby (deselect/power down)

Read L L H Data OUT Active

Output Disable L H H High Z Active (deselected)

Write L X L Data IN Active

Capacitance

(V

= 0V, f = 1MHz, Tc = 25°C, unless otherwise noted, Guaranteed but not tested)

IN

Symbol Parameter Maximum Units

C

IN

C

OUT

Input Capacitance (A

0-18

Output Capacitance (I/O

, WE & OE)

& CE)

0-7

20 pF
20 pF

DC Characteristics

(VCC = 5.0V, VSS = 0V, Tc = -55°C to +125°C, unless otherwise specified)

Parameter Sym Conditions

I

Input Leakage Current
Output Leakage Current

Operating Supply Current

Standby Current

Output Low Voltage
Output High Voltage

VCC = Max, VIN=0toV

LI

I

CE = VIH, OE = VIH, V

LO

CE = VIL, OE = VIH, Vcc=5.5V,

I

CC

f=5MHz CMOS Compatible
CE = Vcc, OE= VIH, Vcc=5.5V,

I

SB

f=5MHz CMOS Compatible

V

IOL = 8 mA, Vcc = 4.5V

OL

V

IOH = -4 mA, Vcc = 4.5V

OH

CC

OUT

= 0toV

CC

ALL SPEEDS

Min Max

-10 +10 µA

-10 +10 µA

- 170 mA

- 20 mA

- 0.4 V

2.4 - V

Units

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2

Read Cycle

Parameter

Read Cycle Time
Address Access Time
Chip Select Access Time
Output Hold from Address Change
Output Enable to Output Valid
Chip Select to Output in Low Z (1)
Output Enable to Output in Low Z (1)
Chip Deselect to Output in High Z (1)
Output Disable to Output in High Z (1)

Note 1. Guaranteed by design, but not tested

Write Cycle

Parameter

Write Cycle Time
Chip Select to End of Write
Address Valid to End of Write
Data Valid to End of Write
Write Pulse Width
Address Setup Time
Address Hold Time
Output Active from End of Write (1)
Write to Output in High Z (1)
Data Hold from Write Time

Note 1. Guaranteed by design, but not tested

AC Characteristics

(VCC = 5.0V, VSS= 0V, Tc= -55°C to +125°C)

Sym

t

t
t
t
t

Sym

t
t

t

t

t

–017

Min Max

17 - 20 - 25 - 35 - 45 - 55 -

t

RC

- 17 - 20 - 25 - 35 - 45 - 55

t

AA

- 17 - 20 - 25 - 35 - 45 - 55

ACS

0 - 0 - 0 - 0 - 0 - 0 -

t

OH

- 9 - 10 - 12 - 25 25 25 ns

t

OE

2 - 2 - 2 - 4 - 4 - 4 - ns

CLZ

0 - 0 - 0 - 0 - 0 - 0 -

OLZ

- 9 - 10 - 12 - 15 - 20 - 20

CHZ

- 9 - 10 - 12 - 15 - 20 - 20

OHZ

–017

Min Max

17 - 20 - 25 - 35 - 45 - 55 - ns

WC

15 - 15 - 20 - 25 - 35 - 50 - ns

CW

t

15 - 15 - 20 - 25 - 35 - 50 - ns

AW

12 - 12 - 15 - 20 - 25 - 25 - ns

DW

t

14 - 14 - 15 - 25 - 35 - 40 - ns

WP

t

2 - 2 - 2 - 2 - 2 - 2 - ns

AS

t

0 - 0 - 0 - 0 - 5 - 5 - ns

AH

0 - 0 - 0 0 5 - 5 - ns

OW

- 9 - 9 - 10 - 15 - 20 - 25 ns

WHZ

t

0 - 0 - 0 - 0 - 0 - 0 - ns

DH

–020

Min Max

–020

Min Max

–025

Min Max

–025

Min Max

Min Max

Min Max

–035

–035

–045

Min Max

–045

Min Max

–055

Min Max

–055

Min Max

Units

ns
ns
ns
ns

ns
ns
ns

Units

Data Retention Electrical Characteristics (Special Order Only)

(Tc = -55°C to +125°C)

Parameter Sym Test Conditions

for Data Retention

V

CC

Data Retention Current (1)

Available in Low Power version. Call For Information.

V

DR

I

CCDR1

CE ≥ V

V

CC

CC

= 3V

– 0.2V

ALL SPEEDS

Min Typ Max

2 - 5.5 V

- 0.5 7.0 mA

Units

Truth Table

Mode CE OE WE Data I/O Power

Standby H X X High Z Standby (deselect/power down)

Read L L H Data Out Active

Output Disable L H H High Z Active (deselected)

Write L X L Data In Active

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3

Timing Diagrams

Read Cycle Timing Diagrams

Read Cycle 1 (CE = OE = VIL, WE = VIH)

tRC

A0-18

tAA

tOH

DI/O

Read Cycle 2 (WE = VIH)

tRC

A0-18

tAA

CE

tACS

tCLZ

OE

DI/O

SEE NOTE

tOLZ

SEE NOTE

High Z

OE

t

Data ValidPrevious Data Valid

tCHZ

SEE NOTE

t

OHZ

SEE NOTE

Data Valid

Write Cycle Timing Diagrams

Write Cycle 1 (WE Controlled, OE = VIL)

tWC

A0-16

tAW tAH

tWHZ

tCW

tDW

Data Valid

tWC

tAW

tCW

tWP

tDW

Data Valid

CE

tAS tWP

WE

DI/O

Write Cycle 2 (CE

A0-18

tAS

CE

WE

DI/O

SEE NOTE

Controlled, OE = VIH )

tOW

SEE NOTE

tDH

tAH

tDH

UNDEFINED

DON’T CARE

Note: Guaranteed by design, but not tested.

AC Test Circuit

Current Source

IOL

Parameter Typical Units

Z ~ 1.5 V (Bipolar Supply)

To Device Under Test

CL =
50 pF

Current Source

V

Input and Output Timing Reference Level 1.5 V

IOH

Notes:

Z is programmable from -2V to +7V. 2) IOL and IOH programmable from 0 to 16 mA. 3) Tester Impedance

1) V

O =75Ω. 4) VZ is typically the midpoint of VOH and VOL. 5) IOL and IOH are adjusted to simulate a typical resistance

Z
load circuit. 6) ATE Tester includes jig capacitance.

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4

Input Pulse Level 0 – 3.0 V

Input Rise and Fall 5 ns

Pin Numbers & Functions

All dimensions in inches

36 Pins — Flat Package

Pin # Function Pin # Function

1 A
2 A
3 A2 21 A11
4 A3 22 A12
5 A4 23 A13
6 CE 24 A14
7 I/O0 25 I/O4
8 I/O1 26 I/O5

9 VCC 27 VCC
10 VSS 28 VSS
11 I/O2 29 I/O6
12 I/O3 30 I/O7
13 WE 31 OE
14 A5 32 A15
15 A6 33 A16
16 A7 34 A17
17 A8 35 A18
18 A9 36 NC

0 19 NC
1 20 A10

Package Outline "F3" — Small Flat Package, 36 Leads

.930

MAX

Pin 18

Pin 19

.515

MAX

.350
MIN

Pin 36

Pin 1

.017

.850 REF

(17 spaces at .050)

2 sides

±.002

.035±.003

.125 MAX

.005 ±.002

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5

Pin Numbers & Functions

36 Pins — CSOJ

1 A0 19 NC

2 A

3 A2 21 A11

4 A3 22 A12

5 A4 23 A13

6 CE 24 A14

7 I/O0 25 I/O4

8 I/O1 26 I/O5

9 VCC 27 VCC
10 VSS 28 VSS
11 I/O2 29 I/O6
12 I/O3 30 I/O7
13 WE 31 OE
14 A5 32 A15
15 A6 33 A16
16 A7 34 A17
17 A8 35 A18
18 A9 36 NC

1 20 A10

Package Outline "F4" — .435" x .920" CSOJ, 36 Pins

.930

MAX

0.008
±.002

.435

MAX

All dimensions in inches

Pin 1

.050
TYP

.017 ±..002

.850
TYP

*.155 MAX thickness available, contact factory for details

*.184

MAX

.376
±.01

.050 ±.01

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6

Pin Numbers & Functions

32 Pins — DIP

1 A18 17 I/O3

2 A16 18 I/O4

3 A14 19 I/O5

4 A12 20 I/O6

5 A7 21 I/O7

6 A6 22 CE

7 A5 23 A10

8 A4 24 OE

9 A3 25 A11
10 A2 26 A9
11 A1 27 A8
12 A0 28 A13
13 I/O0 29 WE
14 I/O1 30 A17
15 I/O2 31 A15
16 VSS 32 VCC

Package Outline "P4" — .590" x 1.67" DIP Package, 32 Leads

1.623
MAX

Pin 32

Pin 1

Pin 1

Identifier

All dimensions in inches

.100 .055

TYP

.045

.020
.016
TYP

.060
.040
TYP

.165

MAX

.125

MIN

.012
.009

.604

MAX

.610
.590

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7

CIRCUIT TECHNOLOGY

Ordering Information

Model Number DESC Part Number Speed Package

ACT–S512K8N–017F3Q 5962–9561310HUC 17ns 36 Lead Flat
ACT–S512K8N–020F3Q 5962–9561309HUC 20ns 36 Lead Flat
ACT–S512K8N–025F3Q 5962–9561308HUC 25ns 36 Lead Flat
ACT–S512K8N–035F3Q 5962–9561307HUC 35ns 36 Lead Flat
ACT–S512K8N–045F3Q 5962–9561306HUC 45ns 36 Lead Flat
ACT–S512K8N–055F3Q 5962–9561305HUC 55ns 36 Lead Flat
ACT–S512K8N–017P4Q 5962–9561310HYC 17ns 32 Pin DIP
ACT–S512K8N–020P4Q 5962–9561309HYC 20ns 32 Pin DIP
ACT–S512K8N–025P4Q 5962–9561308HYC 25ns 32 Pin DIP
ACT–S512K8N–035P4Q 5962–9561307HYC 35ns 32 Pin DIP
ACT–S512K8N–045P4Q 5962–9561306HYC 45ns 32 Pin DIP
ACT–S512K8N–055P4Q 5962–9561305HYC 55ns 32 Pin DIP
ACT–S512K8N–017F4Q 5962–9561310HZC 17ns 36 Lead CSOJ
ACT–S512K8N–020F4Q 5962–9561309HZC 20ns 36 Lead CSOJ
ACT–S512K8N–025F4Q 5962–9561308HZC 25ns 36 Lead CSOJ
ACT–S512K8N–035F4Q 5962–9561307HZC 35ns 36 Lead CSOJ
ACT–S512K8N–045F4Q 5962–9561306HZC 45ns 36 Lead CSOJ
ACT–S512K8N–055F4Q 5962–9561305HZC 55ns 36 Lead CSOJ
* Pending

Model Number Breakdown

ACT– S 512K 8 N– 020 F4 Q

Aeroflex Circuit
Technology

Memory Type

S = SRAM

Memory Depth

Memory Width, Bits

Pinout Options

N = None

Memory Speed, ns

Specification subject to change without notice

Aeroflex Circuit Technology
35 South Service Road
Plainview New York 11803

Aeroflex Circuit Technology SCD1664 REV C 5/10/00 Plainview NY [phone]

C = Commercial Temp, 0°C to +70°C
I = Industrial Temp, -40°C to +85°C
T = Military Temp, -55°C to +125°C
M = Military Temp, -55°C to +125°C, Screening
Q = MIL-PRF-38534 Compliant/SMD if applicable

Surface Mount Packages Thru-Hole Packages

F3 = 36 Pin FP P4 = 32 Pin DIP
F4 = 36 Pin CSOJ

* Screened to the individual test methods of MIL-STD-883

Telephone: [phone]

FAX: [phone]

Toll Free Inquiries: 1-[phone]

8

Screening

*

Package Type & Size