Datasheet ACTS245T Datasheet (Intersil Corporation)

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ACTS245T
Data Sheet July 1999 File Number
Radiation Hardened Octal Non-Inverting Bidirectional Bus Transceiver
Intersil’sSatellite Applications FlowTM(SAF) devices are fully tested and guaranteed to 100kRAD Total Dose. These QML Class T devices are processed to a standard flow intended to meet the cost and shorter lead-time needs of large volume satellite manufacturers, while maintaining a high level of reliability.
The Intersil ACTS245T is a Radiation Hardened Octal Non­Inverting Bidirectional Bus Transceiver intended for two-way asynchronous communication between data busses.
Specifications
Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed below must be used when ordering.
Detailed Electrical Specifications for the ACTS245T are contained in SMD 5962-96719. A “hot-link” is provided from our website for downloading. www.intersil.com/spacedefense/ne wsafc lasst.asp
Intersil’s Quality Management Plan (QM Plan), listing all Class T screening operations, is also available on our website.
www.intersil.com/quality/manuals.asp
Ordering Information
TEMP.
ORDERING
NUMBER
5962R9671901TRC ACTS245DTR -55 to 125 5962R9671901TXC ACTS245KTR -55 to 125
NOTE:
Minimumorderquantity for -T is 150 units through
distribution, or 450 units direct.
PART
NUMBER
RANGE
(oC)
4611.1
Features
• QML Class T, Per MIL-PRF-38535
• Radiation Performance
5
- Gamma Dose (γ) 1 x 10
RAD(Si)
- Latch-Up Free Under Any Conditions
- Single Event Upset (SEU) Immunity: <1 x 10
-10
Errors/Bit/Day (Typ)
- SEU LET Threshold . . . . . . . . . . . . .>100 MEV-cm
2
/mg
• 1.25 Micron Radiation Hardened SOS CMOS
• Significant Power Reduction Compared to ALSTTL Logic
• DC Operating Voltage Range. . . . . . . . . . . . 4.5V to 5.5V
• Input Logic Levels
-VIL = 0.8V Max
-V
IH
= V
CC/2
Min
• Fast Propagation Delay . . . . . . . . 18ns (Max), 12ns (Typ)
Pinouts
ACTS245T (SBDIP), CDIP2-T20
TOP VIEW
1
DIR
2
A0
3
A1
4
A2
5
A3
6
A4
7
A5
8
A6
9
A7
10
GND
ACTS245T (FLATPACK), CDFP4-F20
TOP VIEW
20
V
CC
19
OE
18
B0
17
B1
16
B2
15
B3
14
B4
13
B5
12
B6
11
B7
DIR
A0 A1 A2 A3 A4 A5 A6 A7
GND
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CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
www.intersil.com or 407-727-9207
120 2 3 4 5 6 7 8 9 10
19 18 17 16 15 14 13 12 11
| Copyright © Intersil Corporation 1999
V OE B0 B1 B2 B3 B4 B5 B6 B7
CC
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Functional Diagram
ACTS245T
NOTE: (1 of 8)
P
A
OE
DIR
N
P
N
TRUTH TABLE
INPUTS
OPERATIONOE DIR
L L B Data to A Bus
B
L H A Data to B Bus
H X Isolation
NOTE: H = High Voltage Level, L = Low Voltage Level, X = Immaterial.
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Die Characteristics
ACTS245T
DIE DIMENSIONS:
(2440µm x 2970µm x 533µm ±51µm) 96 x 117 x 21mils ±2mil
METALLIZATION:
Type: Al Si Cu Thickness: 10.0k
Å ±2kÅ
SUBSTRATE POTENTIAL:
Unbiased (Silicon on Sapphire) Bond Pad #20 (V Bond Pad #20 (V
) First
CC
) Uses Two Bond Wires
CC
Bond Pad #10 (GND) Uses Two Bond Wires
Metallization Mask Layout
A1 (3)
A0 (2)
ACTS245T
DIR
(1)
BACKSIDE FINISH:
Sapphire
PASSIVATION:
Type: Silox (S Thickness: 8.0k
)
iO2
Å ±1.0kÅ
WORST CASE CURRENT DENSITY:
< 2.0e5 A/cm
2
TRANSISTOR COUNT:
420
PROCESS:
CMOS SOS
VCC
(20)
VCC
(20)
OE
(19)
(18) B0
A2 (4)
A3 (5)
A4 (6)
A5 (7)
A6 (8)
(10) (11) (12)
(9) A7 GND B7 B6
(10)
GND
(17) B1
(16) B2
(15) B3
(14) B4
(13) B5
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with­out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However ,no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
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