Datasheet ACT-F2M32A-150F18Q, ACT-F2M32A-150F18M, ACT-F2M32A-150F18I, ACT-F2M32A-150F18C, ACT-F2M32A-120F18Q Datasheet (ACT)

ACT–F2M32A High Speed 64 Megabit

Sector Erase

FLASH Multichip Module

CIRCUIT TECHNOLOGY

Features

■ 4 Low Voltage/Power AMD 2M x 8 FLASH Die in One

MCM Package

■ Overall Configuration is 2M x 32

■ +5V Power Supply / +5V Programing Operation

■ Access Times of 90, 120 and 150 ns

■ Erase/Program Cycles – 100,000 Minimum

■ Sector erase architecture (Each Die)

● 32 uniform sectors of 64 Kbytes each

● Any combination of sectors can be erased. Also

supports full chip erase

● Sector group protection is user definable

■ Embedded Erase Algorithims – Automatically

pre-programs and erases the die or any sector

■ Embedded Program Algorithims – Automatically

programs and verifies data at specified address

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■ Ready/Busy output (RY/BY) – Hardware method for

detection of program or erase cycle completion

■ Hardware RESET pin – Resets internal state machine

to the read mode

■ Erase Suspend/Resume – Supports reading or

programming data to a sector not being erased

■ Packaging – Hermetic Ceramic

● 68 Lead, .94" x .94" x .140" Single-Cavity Small

Outline Gull Wing, Aeroflex code# "F18" (Drops into
the 68 Lead JEDEC .99"SQ CQFJ footprint)

■ Internal Decoupling Capacitors for Low Noise

Operation

■ Commercial, Industrial and Military Temperature

Ranges

■ MIL-PRF-38534 Compliant MCMs Available

Block Diagram – CQFP(F18)

Standard Configuration

CE1 CE2

RESET

WE

OE

A0 – A20

RY/BY

2Mx8 2Mx8 2Mx8 2Mx8

8 8

I/O0-7 I/O8-15 I/O16-23 I/O24-31

8

Block Diagram – CQFP(F18)

Optional Configuration

RESET

OE

A0 – A20

2Mx8 2Mx8 2Mx8 2Mx8

8 8 8 8

I/O0-7 I/O8-15 I/O16-23 I/O24-31

CE

CE3 WE4WE3WE2WE1 CE1 CE2

Pin Description

I/O

0-31 Data I/O

3

CE4

A

0–20 Address Inputs

WE

CE

OE

RY/BY

RESET Reset

V

8

GND Ground

NC Not Connected

Write Enables

1-4 Chip Enables

Output Enable

Ready/Busy

CC Power Supply

General Description

Utilizing AMD’s Sector Erase
Flash Memory Die, the
ACT-F2M32A is a high speed,
64 megabit CMOS flash
multichip module (MCM)
designed for full temperature
range, military, space, or high
reliability applications.

The ACT-F2M32A consists of
four high-performance AMD
Am29F016 16Mbit (16,777,216
bit) memory die. Each die
contains 8 separately write or

Pin Description

erase sector groups of
256Kbytes (A sector group

I/O

CE4

0-31 Data I/O

A

0–20 Address Inputs

WE

1-4 Write Enable

CE

1-4 Chip Enables

OE

RESET

V

CC Power Supply

GND Ground

NC Not Connected

Output Enable

Reset

consists of 4 adjacent sectors of
64Kbytes each).

The command register is
written by bringing WE
low level (V
and OE

IL), while CE is low

is high (VIH). Reading is

to a logic

accomplished by chip Enable

) and Output Enable (OE)

(CE
being logically active. Access
time grades of 90ns, 120ns and
150ns maximum are standard.

eroflex Circuit Technology - Advanced Multichip Modules © SCD1666A REV A 9/12/97

General Description, Cont’d,

The ACT-F2M32A is packaged in a hermetically sealed co-fired ceramic 68 lead, .94"
SQ Ceramic Gull Wing CQFP package. This allows operation in a military environment
temperature range of -55°C to +125°C.

The ACT-F2M32A can be programmed (both read and write functions) in-system using
the +5.0V V
operations. The end of program or erase is detected by the RY/BY
DQ7, or by the Toggle bit (DQ6).

CC power supply. A 12.0V VPP is not required for programming or erase

pin, Data Polling of

The ACT-F2M32A also has a hardware RESET

pin. When this pin is driven low,
execution of any Embedded Program Alggorithm or Embedded Erase Algorithm will be
terminated.

Each block can be independently erased and programmed 100,000 times at +25°C.

For Detail Information regarding the operation of the Am29F016 Sector Erase Flash

Memory, see the AMD datasheet (Publication 18805).

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Absolute Maximum Ratings

Parameter Range Units

Case Operating Temperature Range
Storage Temperature Range

(1)

Voltage with Respect to GND (All pins except A
Voltage on Pins A

9, OE, RESET

(2)

Vcc Supply Voltage with Respect to Ground
Output Short Circuit Current

Notes:

1. Minimum DC voltage is -0.5V on input/output pins. During Transitions, inputs may undershoot GND to -2.0V for periods up to 20ns. Maximum DC voltage on
input/output pins is V

2. Minimum DC input voltage on A
Maximum DC input voltage on A

3. No more than one output shorted to ground for no more than 1 second.
NOTICE: Stresses above those listed under "Absolute Maximums Rating" may cause permanent damage to the device. These are stress rating only; functional

operation beyond the "Operation Conditions" is not recommended and extended exposure beyond the "Operation Conditions" may effect device reliability.

CC + 0.5V, which may overshoot to VCC + 2.0V for periods up to 20ns.

(3)

9 ,OE, RESET pins is -0.5V. During Voltage transitions, A9, OE & RESET may overshoot GND to -2.0V for periods up to 20ns.

9 is +12.5V which may overshoot to 14V for periods up to 20ns.

9)

(1)

-55 to +125 °C

-65 to +150 °C

-2.0 to +7.0 V

-2.0 to +13.5 V

-2.0 to +7.0 V
200 mA

Recommended Operating Conditions

Symbol Parameter Minimum Maximum Units

CC

V

V
V

T

5V Power Supply Voltage (10%)

IH

Input High Voltage (CMOS)

IL

Input Low Voltage

C

Operating Temperature (Military)

+4.5 +5.5 V

0.7 x V

CC V

+ 0.3 V

cc

-0.5 +0.8 V

-55 +125 °C

Capacitance

(f = 1MHz, TC = 25°C, Standard Configuration)

Symbol Parameter Maximum Units

C
C

C

RESET

C

C

RY/BY

C

C

AD

A0 – A20 Capacitance

OE

OE Capacitance

CE

CE Capacitance
RESET Capacitance

WE

WE Capacitance
RY/BY Capacitance

I/O

I/O0 – I/O31 Capacitance

50 pF
50 pF
20 pF
50 pF
60 pF
50 pF
20 pF

Capacitance Guaranteed by design, but not tested.

DC Characteristics – CMOS Compatible

(TC = -55°C to +125°C, VCC = +4.5V to + 5.5V, Unless otherwise specified)

Parameter Sym Conditions Min Max Units

CC

CC -

10 µA
50 µA

10 µA
160 mA
240 mA

4 mA
4 mA

0.45 V
V

V

Input Load Current
A9 Leakage Current
Output Leakage Current
Vcc Active Read Current
Vcc Active Program/Erase Current
Vcc Standby Current
Vcc Standby Current (Reset)
Output Low Voltage
Output High Voltage

CC Lock-Out Voltage

Low V

Notes:

1. Not 100% tested.

IL

I

VCC = VCCMax., VIN = VCC or GND

LIT

I

VCC = VCCMax., A9 = +12V

LO

I

VCC = VCCMax., VIN = GND to VCC

CC1

I

(1)

I

CC2
CC3

I

CC4

I

OL

V

OH1

V

OH2

V
V

LKO 3.2 4.2 V

= VIL, OE = VIH

CE

= VIL, OE = VIH

CE

CC = VCCMax., CE = RESET = VCC ± 0.3V

V

CC = VCCMax., RESET = VCC ± 0.3V

V
VCC = VCCMin., IOL = 12 mA

CC = VCCMin., IOH = -2.5 mA

V

CC = VCCMin., IOH = -100 µA

V

0.85 x
V

V

0.4V

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3

AC Characteristics – Write/Erase/Program Operations – WE Controlled

(TC = -55°C to +125°C, VCC = +4.5V to + 5.5V, Unless otherwise specified)

Parameter

Write Cycle Time
Address Setup to WE
Address Hold Time from CE
Data Setup to WE
Data Hold Time from WE

Going Low

High

Going High

High
Output Enable Hold Time
Read Recover Time Before Write

High to WE Low)

(OE

Setup Time from WE Low

CE

Hold Time from WE High

CE

Pulse Width

WE

Pulse Width High

WE
Byte Programming Operation
Sector Erase Operation

CC Set-Up Time

V
Rise Time to V

Setup Time to WE Active

OE

Pulse Width

Reset
Program/Erase Valid to RY/BY

ID

Delay

Notes:

1. Not 100% tested.

Read

Toggle Bit I and Data

Parameter

Symbol

Standard

WC tAVAV 90 120 150 ns

t

t

AS tAVWL 0 0 0 ns

t

AH tWLAX 45 50 50 ns

t

DS tDVWH 45 50 50 ns

t

DH tWHDX 0 0 0 ns

OEH

Polling 10 10 10 ns

t

t

GHWL tGHWL 0 0 0 ns

t

CS tELWL 0 0 0 ns

t

CH tWHEH 0 0 0 ns

t

WP tWLWH 45 50 50 ns

t

WPH tWHWL 20 20 20 ns

WHWH1 tWHWH1 8 8 8 µs

t

WHWH2 tWHWH2 15 15 15 Sec

t

t

VCS 50 50 50 µs

Parameter

Symbol

JEDEC

90ns 120ns 150ns

Min Max Min Max Min Max

0 0 0 ns

Units

tVIDR 500 500 500 ns

tOESP 4 4 4 µs

tRP 500 500 500 ns

tBUSY 40 50 60 ns

Parameter

Read Cycle Time

(1)

Address to Output Delay

to Output Delay

CE

to Output Delay

OE

to Output in High Z

CE

to Output in High Z

OE

(1)

(1)

Output Hold from Addresses, CE
First

Low to Read Mode

RESET

Notes:

1. Not 100% tested.

(1)

AC Characteristics – Read Only Operations

(TC = -55°C to +125°C, VCC = +4.5V to + 5.5V, Unless otherwise specified)

or OE Change, Whichever Occurs

Parameter

Symbol

Standard

tRC tAVAV 90 120 150 ns

ACC tAVQV 90 120 150 ns

t

t

CE tELQV 90 120 150 ns

t

OE tGLQV 40 50 55 ns

tDF tEHQZ 20 30 35 ns
tDF tGHQZ 20 0 30 0 35 ns

OH tAXQX 0 0 0 ns

t

tREADY 20 20 20 µs

Parameter

Symbol

JEDEC

90ns 120ns 150ns

Min Max Min Max Min Max

Units

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4

AC Characteristics – Write/Erase/Program Operations – CE Controlled

(TC = -55°C to +125°C, VCC = +4.5V to + 5.5V, Unless otherwise specified)

Parameter

Write Cycle Time
Address Setup to CE
Address Hold Time from CE
Data Setup to CE
Data Hold Time from CE
Output Enable Setup Time

Output Enable Hold Time

(1)

Going Low

Low

Going High

High

(1)

(1)

Read Recover Time Before Write

High to WE Low)

(OE

Setup Time from WE Low

CE

Hold Time from CE High

WE

Pulse Width

WE

Pulse Width High

WE
Byte Programming Operation
Sector Erase Operation

Notes:

1. Not 100% tested.

Read

Toggle Bit I and Data

Parameter

Symbol

Standard

Parameter

Symbol

JEDEC

90ns 120ns 150ns

Min Max Min Max Min Max

Units

tWC tAVAV 90 120 150 ns

t

AS tAVEL 0 0 0 ns

t

AH tELAX 45 50 50 ns

t

DS tDVEH 45 50 50 ns

t

DH tEHDX 0 0 0 ns

tOES 0 0 0 ns

OEH

Polling 10 10 10 ns

t

t

GHEL tGHEL 0 0 0 ns

t

WS tWLEL 0 0 0 ns

t

WH tEHWH 0 0 0 ns

t

CP tELEH 45 50 50 ns

t

CPH tELEL 20 20 20 ns

WHWH1 tWHWH1 8 8 8 µs

t

WHWH2 tWHWH2 15 15 15 Sec

t

0 0 0 ns

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5

Device

Under

Test

AC Test Circuit

Test Configuration Component Values

C

Test Configuration

CC

V

R1

OUT

C

L

R2

3.3V Standard Test 50 990 770
5V Standard Test 50 580 390

NOTES:

C

L includes jig capacitance.

L

(pF)

Parameter Typical Units
Input Pulse Level 0 – 3.0 V
Input Rise and Fall 5 ns
Input and Output Timing Reference Level 1.5 V

R1

(Ω)

R2

(Ω)

Addresses

CE

OE

WE

Data

+5 Volt

AC Waveforms for Write and Erase Operations, WE Controlled

3rd Bus Cycle

5555H PA PA

tWC

tAS

tAH

tGHWL

tWP

tCS

tWPH

tDH

AOH

PD DQ7

tDS

Data

tWHWH1

Polling

tRC

tOE

DOUT

tCE

tDF

tOH

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AC Waveforms for Write and Erase Operations, CE Controlled

Data

Polling

Addresses

WE

OE

CE

Data

+5 Volt

5555H PA PA

tWC

tGHEL

tWS

AOH

tDS

tAS

tCP

tCPH

tAH

tWHWH1

tDH

PD DQ7

AC Waveform For Read Operations

DOUT

Addresses

CE

OE

WE

Outputs

tRC

Addresses Stable

tACC

tOE

tOEH

tCE

tOH

High Z High Z

Output Valid

tDF

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7

Pin Numbers & Functions

68 Pins — Dual-Cavity CQFP

(Standard Configuration)

Pin # Function Pin # Function Pin # Function Pin # Function

1 GND 18 GND 35 OE
2 CE

3 19 I/O8 36 CE2 53 I/O23

52 GND

3 A5 20 I/O9 37 A17 54 I/O22
4 A4 21 I/O10 38 RY/ BY 55 I/O21
5 A3 22 I/O11 39 NC 56 I/O20
6 A2 23 I/O12 40 NC 57 I/O19
7 A1 24 I/O13 41 A18 58 I/O18
8 A0 25 I/O14 42 A19 59 I/O17

9 RESET 26 I/O15 43 A20 60 I/O16
10 I/O0 27 VCC 44 I/O31 61 VCC
11 I/O1 28 A11 45 I/O30 62 A10
12 I/O2 29 A12 46 I/O29 63 A9
13 I/O3 30 A13 47 I/O28 64 A8
14 I/O4 31 A14 48 I/O27 65 A7
15 I/O5 32 A15 49 I/O26 66 A6
16 I/O6 33 A16 50 I/O25 67 WE
17 I/O7 34 CE1 51 I/O24 68 CE4

Consult Factory for Special order (Optional Configuration): Pin 38 - WE2, Pin 39 - WE3, Pin 40 - WE4 and Pin 67 - WE1

"F18" — CQFP Package

.990 SQ
±.010

.940 SQ

Pin 9

Pin 10

Pin 26

±.009

.800 REF

Pin 61

Pin 60

Pin 44

Pin 43Pin 27

.015

±.002

.900 SQ

REF

.140

MAX

.640 SQ

REF

.008

±.002

.040

Detail “A”

Metal spacer

.010

±.008

.015

±.002

See Detail “A”

All dimensions in inches

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Ordering Information

CIRCUIT TECHNOLOGY

Memory Speed, ns (+5V V

Model Number Screening Speed Package

ACT–F2M32A–090F18C Commercial (0°C to +70°C)
ACT–F2M32A–120F18C Commercial (0°C to +70°C)
ACT–F2M32A–150F18C Commercial (0°C to +70°C)
ACT–F2M32A–090F18I Industrial (-40°C to +85°C)
ACT–F2M32A–120F18I Industrial (-40°C to +85°C)
ACT–F2M32A–150F18I Industrial (-40°C to +85°C)
ACT–F2M32A–090F18M Military (-55°C to +125°C)
ACT–F2M32A–120F18M Military (-55°C to +125°C)
ACT–F2M32A–150F18M Military (-55°C to +125°C)
ACT–F2M32A–090F18Q DESC Drawing Pending

MIL-PRF-38534 Compliant

ACT–F2M32A–120F18Q DESC Drawing Pending

MIL-PRF-38534 Compliant

ACT–F2M32A–150F18Q DESC Drawing Pending

MIL-PRF-38534 Compliant

Part Number Breakdown

90 ns
120 ns
150 ns

90 ns
120 ns
150 ns

90 ns
120 ns
150 ns

90 ns

120 ns

150 ns

CQFP
CQFP
CQFP
CQFP
CQFP
CQFP
CQFP
CQFP
CQFP
CQFP

CQFP

CQFP

ACT– F 2M 32 A– 090 F18 M

Aeroflex Circuit
Technology

Memory Type

S = SRAM
F = FLASH EEPROM
E = EEPROM
D = Dynamic RAM

Memory Depth, Locations

Memory Width, Bits
Pinout Options

A = One WE, RY/BY access on Pin 38 - Standard pinout
C = Four WE’s & RY/BY internally tied - Optional pinout

CC)

Specifications subject to change without notice

Aeroflex Circuit Technology
35 South Service Road
Plainview New York 11830
www.aeroflex.com/act1.htm

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C = Commercial Temp, 0°C to +70°C
I = Industrial Temp, -40°C to +85°C
T = Military Temp, -55°C to +125°C
M = Military Temp, -55°C to +125°C, Screened
Q = MIL-PRF-38534 Compliant/SMD if applicable

F18 = .94" SQ 68 Lead\Dual-Cavity CQFP

* Screened to the individual test methods of MIL-STD-883

Telephone: [phone]
FAX: [phone]

Toll Free Inquiries: [phone]

E-Mail: [e-mail]

Screening

*

Package Type & Size

Surface Mount Packages