Datasheet ACT108W-600E.135 Specification

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WeEn Semiconductors

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WeEn Semiconductors:

Span o from NXP, Over 50-Years
Leading Experience in Power

High Voltage
Transistors (HVT)

Fast, Ultrafast & Hyperfast

Power Diodes

Bipolar 4-Quadrant Triacs

1980s

Hyperfast diodes

Triac & SCR Planar

Technology Platform

2006

ACT & ACTT Platform

(AC Switch), Casco Diodes

2013

Silicon Carbide Diodes

Enhanced Eciency
Pt Planar diodes (EEPP)

Generation 2: Schottky
Barrier Diodes

High Voltage SCRs

2020

1969

Bipolar 3-Quadrant

Hi-Com Triacs

2000s

WeEn Semiconductors Co., Ltd, span o from NXP, registered on
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the company’s wholly-owned subsidiaries and branches include:
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and distribution center in Hong Kong and research & development
centers in Shanghai and Manchester, UK. WeEn also has sales
oces set up and customer service access throughout the world.

As a key player in the semiconductor industry, WeEn has focused
on developing a large portfolio of industry-leading bipolar power
products including thyristors (i.e. silicon controlled rectifiers and
triacs), silicon power diodes and high voltage transistors. Addition­ally, WeEn has developed a state-of-the-art portfolio of silicon
carbide diodes and power Schottky diodes as well as making
available a number of AECQ products. All these products are
widely used in the markets for telecommunications, computers,
consumer electronics, intelligent home appliances, lighting,
automotive and power management applications.

With over 50 years of design and manufacture experience, WeEn
helps to drive up eciency in your designs and to contribute to the
development of China and global intelligent manufacturing.

aim is to help our customers achieve higher cost eciency and
production eciency and to contribute to the development of
China and global intelligent manufacturing.

Super Advanced Best
Eciency Rectifier

Diodes (SABER)
Generation 1: Schottky

Barrier Diodes

2009

Temperature & Overload

Protected Triac (TOPTriac)

2015

瑞能半导体科技股份有限公司，源自恩
智浦半导体标准产品事业部，注册于
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作为全球功率半导体行业的佼佼者, 我们
的目标是帮助客户提高成本效益和生产效
率，促进中国及全球智能制造行业的发展。

Automotive SiC

Standard Power Diodes

Automotive SCRs

1600V Planar SCRs

CONTENTS

AC Thyristor Triacs / AC Thyristors

AC Thyristor Triacs
AC Thyristors

Temperature and Overload Protected Triacs (Toptriac)

3Q Hi-com Triacs (0.8A - 45A)

4Q Triacs (0.6A - 45A)

Silicon Controlled Rectifiers (0.8A - 126A)

Power Diodes

Hyperfast Power Diodes
1200V Planar Hyperfast Power Diodes

Power Diodes

Ultrafast Power Diodes

SiC Schottky Diode

Power Schottky Diodes
600V - 1600V Standard Power Diodes
Power Diode Bridge
Power Diode Module

04

05

06

07

08

09

10

11

WeEn High Voltage 1600V SCRs
1600V/50A & 1600V/80A, Planar Passivated

TM

WeEn 30A Hi-Com

DFN 8x8 Package

WeEn Silicon Carbide Junction Barrier Schottky (JBS)
650V and 1200V Series

WeEn Products for EV On Board Charger

WeEn Products in Smart Home

Certifications

WeEn Nanchang Reliability & Failure Analysis Laboratory

Triacs

12

13

14

15

16

17

18

19

3

AC Thyristor Triacs / AC Thyristors

TO-92

TO-220AB

TO-220F

TO-220AB

TO-220F

I

2

PAK

SOT223

D

2

PAK

TO-92

SOT223

D

2

PAK

D

2

PAK

AC Thyristor Triacs

(3Q Hi-Com power switches, overvoltage protection)

Types in bold red represent new products

SOT78

(TO220AB)

I

GT

I

I

GT

T : high T

DRM

V

T(RMS)

(A)

2

2

6 800

6 800ECN

10

10

12

12

16

key: C = 35 mA; C0 = 5 - 30 mA; E = 10 mA

(max)

(V)

(mA)

E

800

ETN

800

ACTT6 ACTT6X

ACTT6 ACTT6X

800 C0/C0T

800 ACTT8 ACTT8X ACTT8B8

800 C/CT

800

800

800

800

j(max) 150 °C N: Enhanced Dynamic Performance

ACTT8 ACTT8X ACTT8B8

CTN

ACTT10 ACTT10X

CTN

ACTT10 ACTT10X

C/CT ACTT12 ACTT12X

ACTT12 ACTT12X

CTN

SOT186A

(isolated

TO220AB)

SOT223

ACTT2X

ACTT2X ACTT2W

SOT226

2

(I

PAK)

SOT404

2

(D

ACTT6G ACTT6B

ACTT6B

ACTT10B

ACTT12B

ACTT12BCTN

ACTT16BACTT16 ACTT16X

PAK)

SOT428

(DPAK)

DPAK

ACTT2S

ACTT2S

ACTT4SACTT4XC/E8004

AC Thyristor Triacs ACTT10 series, ACTT12 series

Planar passivated with overvoltage
clamping function

High energy surge handling

Very high dV
immunity to false triggering

High

In the spotlight

D/dt for maximum

Tj(max) to 150 °C

AC Thyristors

(2Q Hi-Com power switches, exclusive negative gate triggering, ’Common’ mounting base, overvoltage protection)

V

I

T(RMS)

DRM

(A)

(V)

0.2 600

600

0.8
80

0

I

key: D = 5 mA; E = 10 mA

GT

SOT54
(TO92)

I

GT

(max)

(mA)

D

D/E ACT108

ACT108

SOT223 SO8

ACT102H

ACT108W

ACT108WE

AC Thyristors ACT108-800E , ACT108W-800E

Planar passivated with overvoltage
clamping function

Working voltage increased to 800V

Enhanced overvoltage clamping
capability

High false trigger immunity

In the spotlight

Temperature and Overload Protected Triacs (Toptriac)

2Q Hi-Com power switches, exclusive negative gate triggering, over-temperature protection

Types in bold red italic represent products in development

I

T(RMS)

(A)

V

I

12 800

800

16 C0 TOPT16

key:

I

GT

C0 = 5 - 35mA

GT

DRM

(max)

(V)

(mA)

C0

SOT78

(TO220)

IITO220

TOPT12

TO263

2

PAK)

(D

TOPT16B

TOPTriac TOPT12, TOPT16

Planar passivated for voltage ruggedness & reliability

Over temperature & over load protection

No need to over-specify triac and heatsink

Avoid loss of control at high temperature

Status monitoring with help of microcontroller

In the spotlight

SOT223

TO-220AB

AC Thyristor Triacs part numbering AC Thyristors part numbering

4

3Q

D

2

PAK

I

T(RMS)

(A)

Hi-Com Triacs (0.8A - 45A)

SOT54

V

DRM

(V)

I (max)

GT

(mA)

(TO92)

TO-92

SOT78

(TO220AB)

TO-220AB

TO220AB)

SOT78D

(inte rnally

insulated

IITO220

SOT186A

(isolated

TO220AB)

TO-220F

SOT223

SOT223

Types in bold red represent new products
Types in bold red italic represent products in development

SOT1292

SOT226

2

PAK)

(I

PAK

2

I

SOT404

2

PAK)

(D

SOT428

(DPAK)

DPAK

(inte rnally

insulated

TO-3P)

SOT1292

0.8

10

12

16

20

25

30

40

45

600 / 800

600 / 800

1000

D/E

D

BTA2008W

BTA2008

D

BTA2008

1000 DN BTA2008

600 / 800

600 / 800

1

600
800

2

600 / 800

3

800

600

4

800

B/E/ER

E

B/C/D/E/F

C/E

D/E BTA202X

CT

B/C/D/E/F

B/C/E

1000 C

6

D600

600 / 800

800

800

800

8

800

800

B/E/F

CT

B0/C0

C0T

ET

F0

1000 B

1000

C0

1000 C0T

C/D/E 600 / 800

600 / 800

BT/CT/ET

CT600

D600

600 / 800

600 / 800

600 / 800

600 / 800

800

800

B/C/E

C

B/C

ET

CT

ET
BT600

600

600

B0

CT

D600

600 / 800

600 / 800

600 / 800

800

800

800

800

600

600 / 800

800

800

800

800

800

800

800

B/C/E

ET

B/C

B0

BT/CT

CT

BT/CT BTA420X*

BT

B

BT

BT/CT

B/BT

BT

BT/CT

BT

BT

BTA201

BTA203

BTA204

BTA204

BTA204X

BTA204X

BTA204X

BTA206CT/ET800

BTA208
BTA208

BTA206X

BTA208X

BTA208X

BTA208X

BTA308X

BTA308Y

BTA308 BTA308X

BTA308X

BTA208X

BTA208X

BTA408X*

BTA310

BTA410*

BTA410Y*

BTA310X

BTA410X*

BTA312

BTA312

BTA312

BTA312X

BTA312X

BTA312Y

BTA412Y*

BTA412Y*

BTA312 BTA312X

BTA312

BTA316

BTA316

BTA316

BTA316

BTA316X

BTA316

BTA416Y*

BTA316

BTA316X

BTA316Y

BTA316

BTA316X

BTA420* BTA420Y*

BTA225

BTA225

BTA425Y*

BTA425X*

BTA330

BTA330X

BTA330Y

BTA201W

BTA204W*
BTA204W*

BTA312G

BTA204S

BTA204S

BTA204S

BTA208S

BTA208S

BTA308S

BTA312B

BTA312B

BTA312B

BTA312B

BTA316B

BTA316B

BTA316B

BTA316B

BTA225B

BTA225B

BTA330B

BTA440Z*

BTA445Z

3Q Triacs part numbering

*high surge I

I

key: B= 50 mA, B0 = 10 - 50 mA, C = 35 mA, C0 = 5 - 35 mA, D = 5 mA, E = 10 mA, F = 25 mA

TSM

GT

j(max) 150 °C

T: high T

R: ACT Pinning

3Q Hi-Com Triacs BTA425, BTA330, BTA440, BTA445

Planar passivated for voltage ruggedness and
reliability

High junction operating temperature capability (150 °C)
Less sensitive gate for high noise immunity

High commutation, high dV
immunity to false triggering

In th espotlight

D/dt for maximumm

TO-220F

SOT1292

5

4Q Triacs

(0.6A - 45A)

I

T(RMS)

(A)

0.6

12

16

20

25

40
45

1

4

6

8

V

DRM

(V)

400
600

600
600 / 800
600 / 800
600 / 800
600 / 800
600 / 800
600 / 800
600 / 800
600 / 800
600 / 800

600

600

800

600

800
600 / 800

600

800

600
600 / 800

800

800

600

800

600

600

600
600 / 800

800

800

800

800

600

600

600

600
600 / 800

800

800

800

600 / 800

600

600

600

800

800

800

800

600

400

600
600 / 800

600 / 800

800

(max)I

GT

(mA)

5/5/5/7
5/5/5/7
3/3/3/7
3/3/3/7
5/5/5/7

10/10/10/10

3/3/3/5
5/5/5/7

10/10/10/10

3/3/3/5
5/5/5/7

10/10/10/10

5/5/5/10

D/E/-

-

D/E/-/G

E/-

D/E

D/-

D
F
E
F

-

F/-/G

-/G

D/-/G

E
F

G0/G0T

E
F

­G
D

-/G
F

G0/G0T

E
F

-

G

B

E/-

F/G

G0/G0T

E
F

-

G

50/50/50/75
50/50/50/75

G0/G0T

­B

B

SOT54
(TO92)

TO-92

MAC97A6
MAC97A8

BT131

BT131-D

BT131-E
Z0103MA/NA
Z0107MA/NA
Z0109MA/NA

Z0103MA0/NA0**
Z0107MA0/NA0**
Z0109MA0/NA0**

T132-D*

B

SOT78

(TO220AB)

TO-220AB

BT234*

BT136

BT136

BT137
BT137

BT137
BT137

BT137

BT138
BT138

BT138
BT138

BT138
BT138

BT139

BT139
BT139

BT139
BT139

MAC223A6

BTA140
BTA140

SOT78D

(inte rnally

insulated

TO220AB)

IITO220

BT138Y

BTA16

SOT82

TO-220AB

BT134
BT134

SOT186A

(isolated

TO220AB)

TO-220F

BT234X*

BT136X

BT136X
BT136X

BT136X
BT236X
BT236X
BT137X
BT137X
BT137X

BT137X

BT137X

BT138X
BT138X
BT138X

BT138X
BT138X
BT138X

BT139X
BT139X

BT139X

MAC223A8X

SOT223

BT131W

Z0103MN/NN
Z0107MN/NN

Z0109MN/NN
Z0103MN0/NN0**
Z0107MN0/NN0**
Z0109MN0/NN0**

BT134W*
BT134W*

Types in bold red represent new products

SOT404

2

(D

PAK)

PAK

2

D

BT136B

BT137B
BT137B

BT137B
BT137B
BT137B

BT138B
BT138B

BT138B

BT139B
BT139B

BT139B
BT139B
BT139B
BT139B

SOT428

(DPAK)

BT136S

BT136S

BT136S
BT136S
BT136S
BT136S

BT137S
BT137S
BT137S

BT137S
BT137S

BT137S

SOT1292

(inte nally

insulated

TO-3P)

DPAK

SOT1292

BTA41
BTA45

I

key:

GT

D = 5mA (10mA in 3+); E = 10mA (25mA in 3+); F = 25mA (70mA in 3+); - = 35mA (70mA in 3+); G = 50mA (100mA in 3+);
G0 = 50mA (100mA in 3+), 10mA min
* High I

TSM **: Enhanced immunity to false triggering T: high Tj(max) 150

o

C

4Q Triacs part numbering

V

Type number

BT137X-600D

Package identifier:
= SOT78 (TO220AB)
B = SOT404 (D
S = SOT428 (DPAK)
W = SOT223
X = SOT186A (isolated TO220AB)
Y = SOT78D (internally insulated TO220AB)

6

2

PAK)

DRM

Gate sensitivity IGT max:

D = 5 mA ( 10 mA in 3+)
E = 10 mA (25 mA in 3+)
F = 25 mA (70 mA in 3+)

- = 35 mA (70 mA in 3+)
G = 50 mA (100 mA in 3+)
G0 = 50 mA (100 mA in 3+), 10 mA min

4Q Triacs Z010***0 series

Planar passivated for voltage ruggedness and reliability

Improved dynamic performance over Z010*** series

Best false trigger immunity for sensitive
4Q triacs

In the spotlight

SOT223

TO-92

Silicon Controlled Rectifiers

(0.8A - 126A)

SOT54

GT

5

5
5
5

(TO92)

TO-92

EC103D1

N0118GA
BT149B/D/G
BT169B/D/G

BT169D-L

BT168E/G

BT169G-L

BT169G-M

BT169H

BT169H-L

I

T(RMS)

(A)

I

T(AV)

(A)

200 / 400 / 600
200 / 400 / 600

0.50.8

0.61

0.71.1

0.81.25

400 / 500 / 600

2.54

500 / 600 / 800

58

& V

DRM

RRM

(V)

200
400
600

400

500 / 600

600
600
600
800
800
600
600
600
850

850
1000
1000
1250

500

600

600

600

800

800

650

I

V

(max)

(mA)

0.2

0.012

0.5μA min - 7μA max

0.2

0.2

0.015 min - 0.05 max

0.02 min - 0.2 max

0.015 min - 0.05 max

0.03 min - 0.06 max

0.015 min - 0.1 max

0.1

0.015 min - 0.05 max

0.02 min - 0.2 max

0.07 min - 0.45 max

0.2

0.015 min - 0.05 max

0.1

0.015 min - 0.05 max

0.1

0.1

0.2

0.2

0.2

0.2

0.2

0.05

0.2

0.2

500 / 650

600

650

650

7.512
650

500 / 650 / 800
500 / 650 / 800

500 / 1000

600

1016

600 / 800

400 / 600 / 800

500

1320

600
800

25

30

31

800
800

19

1200

20

800

2540

3047

1200

800

16

1200

79

1400

1200

50

1600

94

126

high I

TSM

1400

60

1200

80

1600

** Hi-Com / fast turn-off T: high Tj(max) 150 A: Automotive qualied AEC-Q101°C

1.5-5
15
15
15
15
15

25
32
32
32
32

1.5 - 10

35
15
32

15

50
50

50
50
80
80

70
80

Silicon Controlled Rectifiers part numbering

SOT78

(TO220AB)

TO-220AB

SOT82

SOT89

TO-220AB

NCR100Q-6M

BT148-R

BT150-R

BT258-R

BT151-L*

BT151-LTN BT151X-LTN

BT151-C

BT151-R*

BT151-RT*

TYN16-CT
TYN16-RT*

BT152-R

BT152-RT

TYN20-T

TYN20-T

BT145-RT

BT145-R

TYN30-T

BT152-T

TYN40-T

SOT186A

(isolated

TO220AB)

TO-220F

BT258X-R

BT151X-LT

BT151X-C

BT151X-R*

TYN16X-CT

TYN16X-RT*

BT152X-R

TYN20X-T

BT145X-R

SOT223

MCR08BT1
EC103D1W

BT168GW

BT168GWF**

BT148W-R*
NCR100W-10L
NCR100W-10M
NCR100W-12L
NCR100W-12M

NCR125W-125M

SOT404

2

PAK)

(D

PAK

2

D

TYN12B-LT

TYN16B-CT

BT152B-R

TYN20B-T
TYN20B-T

BT153B-T-A

Types in bold red represent new products
Types in bold red italic represent products in development

SOT428

(DPAK)

DPAK

BT150S-R

BT300S-R

BT258S-LT

BT258S-R
BT151S-S

BT151S-L*

BTH151S-R*

BT151S-R*

TYN16S-CT

(TO-247)

BT155W-T

BT155W-T-A

BT155W-T

TYN50W-T

BT158W-T

TYN80W-T

SOT429

TO-247

SOT533

(IPAK)

IPAK

BT258U-R

BT151U-C

SOT1259

(TO-3P)

TO3P

BT155K-T

TYN60K-T

SOT1292

SOT1292

BT155Z-T

IITO220

IITO220

BT151Y-LTN

TYN16Y-CT

TYN20Y-T

TYN30Y-T

BT258S-800LT

(lower I

High Voltage, high surge capability
SCR BT155 series, BT158, TYN60

Planar passivated for voltage ruggedness
and reliability

)

TSM

Very low on-state voltage (V
best efciency in AC-DC conversion

High junction operating temperature
capability (T

In the spotlight

Less sensitive gate for high noise immunity

jmax

150 ºC)

) contributes to

T

TO3P

TO-247

7

Power Diodes

Hyperfast Power Diodes

400

500

600

(V)

RRM

V

2 x 5

SOD59

(TO220AC)

(A)

F(AV)

I

2 x 5

5

5

5

8

8

10

10

10

15

20

20

20

30

30 30

30

30 --

60

75

(A)

F

(typ)

F

V

0.85 5 30

1.15 5 16 BYC5D-500 BYC5DX-500

1.4

1.55

1.4

1.4

1.4

1.3

1.4

1.4

1.4

1.4

1.2

1.2

1.5

1.38

1.55

1.6

(typ) @ 25C

rr

t

@ 150C (V)

(ns)

@ I

5

19

BYC5-600P

13

5

20

19

19

19

18

19

22

19

26

25

26

29

-

-

40

42

BYC8D-600

BYC8-600P

BYC10-600P

BYC10D-600

BYC15-600P

BYC20-600

BYC20D-600P

8

8

10

10

10

5

15

20

20

20

30

--

60

75

(2-pin

SOT186A)

TO-220F

BYC5X-600P

BYC8DX-600

BYC8X-600P

BYC10X-600P

BYC10DX-600

BYC15X-600P

BYC20DX-600P

BYC20X-600P

BYC30X-600PBYC30-600P BYC30W-600P BYC30WT-600P

SOD113

SOD142

(2-pin TO247)

TO-247

BYC30DW-600P

BYC30W-600PT2

BYC60W-600P

BYC75W-600P

SOT429

(3-pin

TO247)

TO-247

SOT78

(TO220AB)

TO-220AB

BYC10-600CT

Types in bold red italic represent products in development

Types in bold red represent new products

IITO220 TO247-2L

BYC30Y-600P

SOT186A

(TO220FP)

BYC405X-400P

SOT404

2

(D

PAK)

PAK

2

D

BYC5B-600

BYC8B-600P

BYC10B-600

BYC30B-600P

BYC30W-600PT2-A

BYC75W-600PT2

1200V Planar Hyperfast Power Diodes

I

VRRM

(V) (V)

1200V

F(AV)

(A)

5

8

15

30

40

40

60

75

100

F

V

1200V Planar Hyperfa st Power Di odes

Planar Passivated, Pt doping technology

Fast recovery, System efciency improvement

Soft recovery, Reduce system EMI

Avalanche ruggedness

Reduces switching losses in associated MOSFET or IGBT

In the Spotlight

(typ)

@150C

2.0

2.0

2.0

2.1

2.2

-

2.2

2.2

2.2

@

15

30

40

60

75

100

SOD59

(typ)

trr

I

F

@25C

(A)

(ns)

42

5

46

8

61

70

91

-

-

96

113

115

(TO220AC)

TO-220AC

BYC5-1200P

BYC8-1200P

BYC15-1200P

BYC30-1200P

TO247-2L

BYC30W-1200P

BYC40W-1200P

BYC40W-1200PS

BYC60W-1200P

BYC75W-1200P

BYC100W-1200P

TO-220AC

8

D

2

PAK

Power Diodes

Types in bold red italic represent products in development

200

3 0.71 3 27

300

2 X 10

400

4 0.784 4 55

0.81 10 9

BYV32E-300P

BYV32EX-300P

PAK

2

I

BYV32EB-300P

SMA

TO247-2L

MUR320

MUR440

600

600

1

0.88 1 45

8

1.35 60 40

0.8 8 65

- - -

MURS160

MURS160B

MUR860

BYV30W-600PT2

BYV60W-600PT2

BYV75W-600PS

9

SiC Schottky Diode

Types in bold red italic represent products in development

I

VRRM

(V) (V)

650

2 x 10

2 x 10

2 x 15

F

F(AV)

V

(A)

4 1.5

6

8

10

10

12

16

20

2

5

(typ)

@25C

1.5

1.5

1.65 10 12

1.5

1.5

1.5

1.5 20 28

1.5

1.65

1.75

1.4

1.4

I

@

F

(A)

4

6

8

10

12 20

16 26

10 14

10 11

15 15

2 -

5

SOD59

(TO220AC)

(typ)

Qr

@25C

(nC)

7 NXPSC04650 NXPSC04650X

NXPSC06650

10

NXPSC08650

13

NXPLQSC10650

NXPSC10650

15

NXPSC12650

NXPSC16650

NXPSC20650

WNSC021200

WNSC051200

-

SOD113

(2-pin SOT186A)

NXPSC06650X

NXPSC08650X

NXPSC10650X NXPSC10650D

TO-220F

SOT429

(3-pin TO247)

NXPSC20650W

NXPLQSC20650W

NXPLQSC30650W

SOT428

(DPAK)

DPAK

NXPSC04650D

NXPSC06650D

NXPSC08650D

SOT404

(D2PAK)

PAK

2

D

NXPSC04650B WNSC04650T

NXPSC06650B

NXPSC08650B

NXPSC10650B

NXPSC12650B

NXPSC16650B

DNF 8X8

WNSC06650T

WNSC08650T

WNSC10650T

NXPSC20650B

1200

10

10

2 x 5

20

2 x 10

1.4

1.4

1.6

1.4

1.4 24

-

10

24

10

12

10

20

52

20

650V SiC Schottky Diode

• Highly stable switching performance

• High forward surge capability IFSM

• Extremely fast reverse recovery time

• Superior in efciency to Silicon Diode alternatives

• Reduced losses in associated MOSFET

• Reduced EMI

In the Spotlight

• Reduced cooling requirements

• RoHS compliant

1200V SiC Schottky Diode

• Highly stable switching performance

• High forward surge capability IFSM

• Extremely fast reverse recovery time

• Superior in efciency to Silicon Diode alternatives

• Reduced losses in associated MOSFET

• Reduced EMI

In the Spotlight

• Reduced cooling requirements

• RoHS compliant

• High junction operating temperature capability (T

WNSC101200

= 175 °C)

j(max)

WNSC101200W

WNSC101200CW

WNSC201200W

WNSC201200CW

10

Power Schottky Diodes

TO-220AB

(TO220AB)

F

I

VRRM

(V) (V)

F(AV)

(A)

F

V

(typ)

@120C

I

@

per diode

(A)

SOD78

Types in bold red italic represent products in development

SOD404

2

PAK)

(D

2

D

PAK

SOT186A

(isolated TO220AB)

TO-220F

TO262

PAK

2

I

100

2 x 10

2 x 10

2 x 10

2 x 15

2 x 20

2 x 20

0.73

0.63

0.73

0.6

0.61

0.64

10

10

10

15

20

20

WNS20H100C

WNS20S100C

WNS30H100C

WNS40H100C

WNS40100C

WNS20H100CB

WNS20S100CB

WNS30H100CB

WNS40H100CB

600V - 1600V Standard Power Diodes

Types in bold red represent new products
Types in bold red italic represent products in development

TO247-2L

I

VRRM

(V) (V)

600V

800V

1000V

1600V

F(AV)

(A)

10

8

10

3

8

45

60

F

V

(typ)

@150C

0.89@25C

0.84

1.07

1.15@25C

1.0

1

1.08

IFSM

I

@

F

@10ms

(A)

(A)

10

8

10

3

8

45

60

-

150

-

-

150

475

-

WND10M600X

WND10P08X

WND08P16X

WND45P16W

WND60P16W

WNS20S100CX

WNS20H100CX

WNS20S100CX

WNS30H100CX

WNS40H100CX

SOT428

(DPAK)

WND08P16D

WNS40H100CG

SK8D

WND03M10

Power Diode Bridge

Types in bold red italic represent products in development

I

VRRM

F(AV)

(V) (V)

600V

600V

F

V

(A)

15 0.88 -

25 0.9 300

(typ)

@25C

IFSM

@10ms

(A)

Power Diode Module

employing series die technology for the lowest possible trr

I

VRRM

1600V

F(AV)

(V) (V)

F

V

(A)

75 1.6

WDMF75M16

• Three phase rectiers

• Heat transfer through aluminium oxide DBC,
ceramic isolated metal baseplate

• High voltage capability

• High inrush current capability

• Planar process

• High operating temperature capability (T

In the Spotlight

(typ)

@25C

MAX

IFSM

@10ms

(A)

750

j (max)

GBU

WNB156U

WNN01

WDMF75M16

= 150°C)

GBJ

WNB2560M

11

WeEn High Voltage 1600V SCRs
1600V/50A & 1600V/80A, Planar Passivated

Applications

Uninterruptible Power Supply (UPS）

Solid State Relay (SSR)

Battery Charger

AC Motor control / DC motor control

Lighting and temperature control

Key Features and Benefits

Very High Voltage Block capability up to 1600V

High junction operating temperature T

j(max)

=150°C

Very high current surge capability

Planar passivated for voltage ruggedness
and reliability

High thermal cycling performance

Low forward voltage drop

Enables the control of peak current at power
supply switch-on, limits the use of mechanical relay
to extend system life time

Key Parameters

Parameters

TYN50W-1600T

TYN80W-1600T

Product

Product

TYN50W-1600T

TYN80W-1600T

Package

TO-247

TO-247

Package

I

T(AV)

I

T(RMS)

V

DRM

I

GT

I

TSM

T

j(max)

dIT/dt

/dt

dV

D

TO-247

50A

79A

1600V

80mA max

650A @ 10ms

150°C

150A/us

1500V/µs @150

TO-247

80A

126A

1600V

80mA max

850A @ 10ms

150°C

150A/us

o

C

1000V/µs @150

o

C

12

WeEn 30A Hi-ComTM Triacs

Applications

Heating controls

High power motor control

High power AC power tools

Applications subject to high
temperature (T

j(max)

= 150 °C)

Key Features and Benefits

Planar passivated 3Q Hi-ComTM technology

High commutation capability with maximum
false trigger immunity

High junction operating temperature
capability (Tj(max) = 150 °C)

High Surge current capability & Low On-state
voltage drop (Low VT)

High thermal cycling performance

Internal insulated package(IITO220) provide best
voltage isolation (2500V) & thermal dissipation balancing

Surface mountable plastic package (D2PAK) gives
the benefit of easy assembly

Package is RoHS compliant

Product

BTA330-800BT

BTA330X-800BT

BTA330Y-800BT

BTA330Y-800CT

BTA330B-800BT

BTA330B-800CT

Package

TO220

TO220FP

IITO220

IITO220

2

D

PAK

DPAK

Key ParametersProduct

Parameters

I

T(RMS)

V

DRM

I

GT

I

TSM

T

j(max)

dIT/dt

BTA330 BT series

30A

800V

50mA max

270A @ 20ms

150°C

100A/µs

BTA330 CT series

30A

800V

35mA max

270A @ 20ms

150°C

100A/µs

13

DFN 8x8 Package

Package

Outline

L x W x H

3

)

(mm

Footprint

2

)

(mm

Volume

3

(mm

)

Part No V

WNSC04650T

WNSC06650T

WNSC08650T

WNSC10650T

D2PAK

10 x 11 x 4.4

110

484

(V) IF (A) VF (V)

DC

650

650

650

650

4

6

8

10

DFN 8X8

8 x 8 x 0.85

*1

1.56

1.50

1.55

1.58

64

54.4

I

FSM

(A)

36

54

72

76

*2

DFN 8X8 vs

2

D

PAK

-42%

-88%

Cd

*3

IR (mA)

(pF)

4

6

8

10

1.56

1.50

1.55

1.58

Applications

Telecom / Server power

Photovoltaic inverter

Features of DFN 8X8

Surface Mount Package

Package: height <1mm with light weight

Low parasitic inductance due to “No-pin” design

Thermal path through the metal pad to the PCB
improves thermal performance

14

Telecom / Server power Photovoltaic inverter

WeEn Silicon Carbide Junction Barrier Schottky (JBS)
650V and 1200V Series

Voltage

650V

1200V

Current

4-30A

2-40A

Package

TO220 / TO247 / DPAK / D2PAK

TO220 / TO247

WeEn SiC JBS for Server Power / Telecom Power

D2,D3: SiC

Key features of WeEn SiC JBS

· No reverse recovery charge

· Qr temperature independent

· High thermal conductivity

WeEn SiC JBS for Photovoltaic Inverter

NXPSC10650

NXPSC20650

NXPSC20650W

NXPSC10650X

15

WeEn Products for EV On Board Charger

Automotive Grade, AEC-Q101 qualified

· Fast Switching Silicon Diodes T

j(max)

175°C

· High Eciency Silicon Carbide Diodes T

· High Current SCRs T

j(max)

150°C

j(max)

175°C

NXPSC20650W-A

BT155W-1200T-A

BT153B-1200T-A

BYC30W-600PT2-A

16

WeEn Products in Smart Home

Coffee Machine:

· Planar passivated technology, high T
capability for better heating control

· BTA316Y-800CT used for heating element control

· TOPT16-800C0 used for heating element control
with over temp. protection function embedded

j(max)

150oC

Air-con

· Platinum-doping SABERTM Series Fast Recovery
Diodes

· BYV415W-600P, BYV415J-600P used for PFC

· BYV30JT-600P, BYC30W-600PT2, BYC20X-600P,
BYC30X-600P used for traditional PFC

Wash Machine

· Planar Passivated technology with the best false
trigger capability

· BTA201W-800E used for Valve control

· BTA416Y-800C used for drum motor control

Dish Washer

· Planar passivated ACT/ACTT series with over-voltage
clamp function

· ACT108W-800E used for water inlet valve control

· ACTT4S-800E used for water extraction pump control

17

Certifications

18

WeEn Nanchang Reliability & Failure Analysis Laboratory

瑞能南昌可靠性测试实验室及失效分析实验室

FIB&SEM&EDX

Temperature Cycle

X-RAY

UHAST & PPOT

Items of Reliability test & FA

可靠性试验及失效分析项目

Failure Analysis

失效分析

Tesec

Reverse bias tropical

Reliability Test

C-SAM

ESD(HBM&MM)

可靠性测试

• Electrical

• I-V Curve

• CSAM

• Microscope

• SEM / EDX / FIB

• Fault Isolation

• Surface Texture

• X-Ray

• Chemical Decap

• Laser Decap

扫描电镜成像 / 能谱 / 聚焦离子束成像

电测量

I-V曲线

超声波扫描

高低倍显微镜（外观检查)

失效定位

表面纹理

X射线成像

化学开封

镭射开封

• HBM/MM

• High temperature storage

• Low temperature storage

• Temperature cycle ( Air to Air )

• High temperature reverse bias

• Gate voltage test

• Reverse bias tropical

• Thermal fatigue

• Unbiased highly accelerated stress test

• Highly accelerated stress test

温度循环试验（气体式)

高温高湿高压反 偏测试

静电测试

高温储存试验

低温储存试验

高温反 偏试验

高温柵偏 偏试验

高温高湿反 偏试验

热疲劳试验

高加速老化试验

19

2020 WeEn Semiconductors

All rights reserved. Reproduction in whole or in part is prohibited
without the prior written consent of the copyright owner. The
information presented in this document does not form part of any
quotation or contract, is believed to be accurate and reliable and
may be changed without notice. No liability will be accepted by the
publisher for any consequence of its use. Publication thereof does
not convey nor imply any license under patent- or other industrial or
intellectual property rights.

Date of release: July 2020

Document order number: 20200701

Website: www.ween-semi.com
Mailbox: [e-mail]