Datasheet ACS86MS Datasheet (Intersil Corporation)

April 1995

ACS86MS

Radiation Hardened

Quad 2-Input Exclusive OR Gate

Features

• 1.25 Micron Radiation Hardened SOS CMOS

• Total Dose 300K RAD (Si)

• Single Event Upset (SEU) Immunity
<1 x 10

• SEU LET Threshold >80 MEV-cm

• Dose Rate Upset >10

-10

Errors/Bit-Day (Typ)

11

RAD (Si)/s, 20ns Pulse

2

/mg

• Latch-Up Free Under Any Conditions

o

• Military Temperature Range: -55

C to +125oC

• Significant Power Reduction Compared to ALSTTL
Logic

• DC Operating Voltage Range: 4.5V to 5.5V

• Input Logic Levels

- VIL = 30% of VCC Max

- VIH = 70% of VCC Min

• Input Current ≤1µA at VOL, VOH

Description

The Intersil ACS86MS is a radiation hardened quad 2-input
exclusive OR gate. A high logic level on both inputs forces
the output to a logic low state.

The ACS86MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of the
radiation hardened, high-speed, CMOS/SOS Logic Family.

Pinouts

14 LEAD CERAMIC DUAL-IN-LINE

MIL-STD-1835 DESIGNATOR, CDIP2-T14, LEAD FINISH C

TOP VIEW

A1

1
2

B1

3

Y1

4

A2

5

B2

6

Y2

7

GND

14 LEAD CERAMIC FLATPACK

MIL-STD-1835 DESIGNATOR, CDFP3-F14, LEAD FINISH C

TOP VIEW

A1
B1
Y1
A2
B2
Y2

GND

1
2
3
4
5
6
7

14

VCC

13

B4

12

A4

11

Y4

10

B3

9

A3

8

Y3

14
13

12
11
10

9
8

VCC
B4
A4
Y4
B3
A3
Y3

Ordering Information

PART NUMBER TEMPERATURE RANGE SCREENING LEVEL PACKAGE

ACS86DMSR -55oC to +125oC Intersil Class S Equivalent 14 Lead SBDIP
ACS86KMSR -55oC to +125oC Intersil Class S Equivalent 14 Lead Ceramic Flatpack
ACS86D/Sample +25oC Sample 14 Lead SBDIP
ACS86K/Sample +25oC Sample 14 Lead Ceramic Flatpack
ACS86HMSR +25oC Die Die

Truth Table

INPUTS OUTPUT

An Bn Yn

LLL

LHH
HLH
HHL

NOTE: L = Logic Level Low, H = Logic Level High

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999

Functional Diagram

(1, 4, 9, 12)

An
Bn

(2, 5, 10, 13)

1

(3, 6, 8, 11)

Spec Number

File Number 3995

Yn

518849

Specifications ACS86MS

Absolute Maximum Ratings Reliability Information

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-0.5V to +6.0V

Input Voltage Range. . . . . . . . . . . . . . . . . . . . . .-0.5V to VCC +0.5V

DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA

DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±50mA

Storage Temperature Range (TSTG). . . . . . . . . . . -65oC to +150oC

Lead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . . +265oC

Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC

ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1

(All Voltages Referenced to VSS)

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Operating Conditions

Supply Voltage Range . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V

Input Rise and Fall Time at 4.5V VCC (TR, TF). . . . . . .10ns/V Max

Operating Temperature Range. . . . . . . . . . . . . . . . -55oC to +125oC

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS

Thermal Impedance θ

DIP. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74oC/W 24oC/W

Flatpack. . . . . . . . . . . . . . . . . . . . . . . . . . 116oC/W 30oC/W

Maximum Package Power Dissipation at +125oC

DIP. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.7W

Flatpack. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.4W

Maximum Device Power Dissipation. . . . . . . . . . . . . . . . . . .(TBD)W

Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .52 Gates

Input High Voltage (VIH). . . . . . . . . . . . . . . . . . VCC to 70% of VCC

Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . .0V to 30% of VCC

JA

θ

JC

(NOTE 1)

PARAMETER SYMBOL

Supply Current ICC VCC = 5.5V,

Output Current
(Source)

Output Current
(Sink)

Output Voltage High VOH VCC = 5.5V, VIH = 3.85V,

Output Voltage Low VOL VCC = 5.5V, VIH = 3.85V,

Input Leakage
Current

IOH VCC = 4.5V, VIH = 4.5V,

IOL VCC = 4.5V, VIH = 4.5V,

IIN VCC = 5.5V,

CONDITIONS

VIN = VCC or GND

VOUT = VCC -0.4V,
VIL = 0V, (Note 2)

VOUT = 0.4V, VIL = 0V,
(Note 2)

VIL = 1.65V, IOH = -50µA

VCC = 4.5V, VIH = 3.15V,
VIL = 1.35V, IOH = -50µA

VIL = 1.65V, IOL = 50µA

VCC = 4.5V, VIH = 3.15V,
VIL = 1.35V, IOL = 50µA

VIN = VCC or GND

GROUP

A SUB-

GROUPS TEMPERATURE

1 +25oC-5µA

2, 3 +125oC, -55oC - 100 µA

1 +25oC -12 - mA

2, 3 +125oC, -55oC-8-mA

1 +25oC12-mA

2, 3 +125oC, -55oC8-mA

1, 2, 3 +25oC, +125oC, -55oC VCC -0.1 - V

1, 2, 3 +25oC, +125oC, -55oC VCC -0.1 - V

1, 2, 3 +25oC, +125oC, -55oC - 0.1 V

1, 2, 3 +25oC, +125oC, -55oC - 0.1 V

1 +25oC-±0.5 µA

2, 3 +125oC, -55oC-±1.0 µA

LIMITS

UNITSMIN MAX

Noise Immunity
Functional Test

NOTES:

1. All voltages referenced to device GND.

2. Force/measure functions may be interchanged.

3. For functional tests, VO ≥4.0V is recognized as a logic “1”, and VO ≤0.5V is recognized as a logic “0”.

FN VCC = 4.5V, VIH = 3.15V,

VIL = 1.35V, (Note 3)

7, 8A, 8B +25oC, +125oC, -55oC- - V

2

Spec Number 518849

Specifications ACS86MS

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS

GROUP

(NOTES 1, 2)

PARAMETER SYMBOL

Propagation Delay
Input to Output

NOTES:

1. All voltages referenced to device GND.

2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns.

PARAMETER SYMBOL CONDITIONS NOTE TEMP

Capacitance Power
Dissipation

Input Capacitance CIN VCC = 5.0V, VIH = 5.0V,

NOTE:

1. The parameters listed in T able 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly test­ed. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.

TPHL VCC = 4.5V, VIH = 4.5V,

TPLH VCC = 4.5V, VIH = 4.5V,

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS

CPD VCC = 5.0V, VIH = 5.0V,

CONDITIONS

VIL = 0V

VIL = 0V

VIL = 0V, f = 1MHz

VIL = 0V, f = 1MHz

A SUB-

GROUPS TEMPERATURE

9 +25oC 2 12 ns

10, 11 +125oC, -55oC 2 13 ns

1 +25oC­1 +125oC­1 +25oC--10pF

1 +125oC--10pF

LIMITS

LIMITS

TBD
TBD

UNITSMIN MAX

UNITSMIN TYP MAX

-pF

-pF

TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS

RAD

(NOTE 1)

PARAMETER SYMBOL

Supply Current ICC VCC = 5.5V, VIN = VCC or GND +25oC - 100 µA
Output Current

(Source)
Output Current (Sink) IOL VCC = VIH = 4.5V,

Output Voltage High VOH VCC = 5.5V, VIH = 3.85V,

Output Voltage Low VOL VCC = 5.5V, VIH = 3.85V,

Input Leakage Current IIN VCC = 5.5V, VIN = VCC or GND +25oC-±1 µA
Noise Immunity

Functional Test
Propagation Delay

Input to Output

NOTES:

1. All voltages referenced to device GND.

2. For functional tests, VO ≥4.0V is recognized as a logic “1”, and VO ≤0.5V is recognized as a logic “0”.

IOH VCC = VIH = 4.5V,

VOUT = VCC -0.4V, VIL = 0

VOUT = 0.4V, VIL = 0

VIL = 1.65V, IOH = -50µA
VCC = 4.5V, VIH = 3.15V,

VIL = 1.35V, IOH = -50µA

VIL = 1.65V, IOL = 50µA
VCC = 4.5V, VIH = 3.15V,

VIL = 1.35V, IOL = 50µA

FN VCC = 4.5V , VIH = 3.15V,

VIL = 1.35V , (Note 2)

TPHL
TPLH

VCC = 4.5V, VIH = 4.5V, VIL = 0V +25oC 2 13 ns

CONDITIONS TEMPERATURE

+25oC -8.0 - mA

+25oC 8.0 - mA

+25oC VCC -0.1 - V

+25oC VCC -0.1 - V

+25oC - 0.1 V

+25oC - 0.1 V

+25oC--V

LIMITS

UNITSMIN MAX

TABLE 5. DELTA PARAMETERS (+25oC)

(NOTE 1)

PARAMETER SYMBOL

Supply Current ICC ±1.0 µA
Output Current IOL/IOH ±15 %

NOTE:

1. All delta calculations are referenced to 0 hour readings or pre-life readings.

DELTA LIMIT UNITS

3

Spec Number 518849

Specifications ACS86MS

TABLE 6. APPLICABLE SUBGROUPS

CONFORMANCE GROUP METHOD GROUP A SUBGROUPS READ AND RECORD

Initial Test (Preburn-In) 100%/5004 1, 7, 9 ICC, IOL/H
Interim Test 1 (Postburn-In) 100%/5004 1, 7, 9 ICC, IOL/H
Interim Test 2 (Postburn-In) 100%/5004 1, 7, 9 ICC, IOL/H
PDA 100%/5004 1, 7, 9, Deltas
Interim Test 3 (Postburn-In) 100%/5004 1, 7, 9 ICC, IOL/H
PDA 100%/5004 1, 7, 9, Deltas
Final Test 100%/5004 2, 3, 8A, 8B, 10, 11
Group A (Note 1) Sample/5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11
Group B Subgroup B-5 Sample/5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas Subgroups 1, 2, 3, 9, 10, 11

Subgroup B-6 Sample/5005 1, 7, 9

Group D Sample/5005 1, 7, 9

NOTE:

1. Alternate Group A testing may be exercised in accordance with MIL-STD-883, Method 5005.

TABLE 7. TOTAL DOSE IRRADIATION

TEST READ AND RECORD

CONFORMANCE GROUP METHOD

Group E Subgroup 2 5005 1, 7, 9 Table 4 1, 9 Table 4 (Note 1)

NOTE:

1. Except FN test which will be performed 100% Go/No-Go.

PRE RAD POST RAD PRE RAD POST RAD

TABLE 8. BURN-IN TEST CONNECTIONS (+125oC < TA < 139oC)

OSCILLATOR

OPEN GROUND 1/2 VCC = 3V ±0.5V VCC = 6V ±0.5V

STATIC BURN-IN 1 (Note 1)

- 1, 2, 4, 5, 7, 9, 10,
12, 13

STATIC BURN-IN 2 (Note 1)

- 7 3, 6, 8, 11 1, 2, 4, 5, 9,

DYNAMIC BURN-IN (Note 1)

- 7 3, 6, 8, 11 14 1, 2, 4, 5, 9,

NOTE:

1. Each pin except VCC and GND will have a series resistor of 500Ω±5%.

TABLE 9. IRRADIATION TEST CONNECTIONS (TA = +25oC, ±5oC)

FUNCTION OPEN GROUND VCC ±0.5V

Irradiation Circuit (Note 1) 3, 6, 8, 11 7 1, 2, 4, 5, 9, 10, 12, 13, 14

NOTE:

1. Each pin except VCC and GND will have a series resistor of 47kΩ±5%. Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures.

3, 6, 8, 11 14 - -

10, 12, 13

50kHz 25kHz

--

-

10, 12, 13

Spec Number 518849

4

Specifications ACS86MS

Intersil - Space Products MS Screening

Wafer Lot Acceptance (All Lots) Method 5007 (Includes SEM)
Radiation Verification (Each Wafer) Method 1019,

4 Samples/Wafer, 0 Rejects
100% Nondestructive Bond Pull Method 2023
100% Internal Visual Inspection Method 2010
100% Temperature Cycling Method 1010 Condition C

(-65

o

to +150oC)
100% Constant Acceleration
100% PIND Testing
100% External Visual Inspection
100% Serialization
100% Initial Electrical Test

o

100% Static Burn-In 1 Method 1015, 24 Hours at +125

C Min

100% Interim Electrical Test 1 (Note 1)

NOTES:

1. Failures from interim electrical tests 1 and 2 are combined for determining PDA (PDA = 5% for subgroups 1, 7, 9 and delta failures com­bined, PDA = 3% for subgroup 7 failures). Interim electrical tests 3 PDA (PDA = 5% for subgroups 1, 7, 9 and delta failures combined,
PDA = 3% for subgroup 7 failures).

2. These steps are optional, and should be listed on the purchase order if required.

3. Data Package Contents:
Cover Sheet (P.O. Number , Customer Number, Lot Date Code, Intersil Number, Lot Number, Quantity).
Certificate of Conformance (as found on shipper).
Lot Serial Number Sheet (Good Unit(s) Serial Number and Lot Number).
Variables Data (All Read, Record, and delta operations).
Group A Attributes Data Summary.
Wafer Lot Acceptance Report (Method 5007) to include reproductions of SEM photos. NOTE: SEM photos to include percent of step coverage.
X-Ray Report and Film, including penetrometer measurements.
GAMMA Radiation Report with initial shipment of devices from the same wafer lot; containing a Cover Page, Disposition, RAD Dose,

Lot Number, Test Package, Spec Number(s), Test Equipment, etc. Irradiation Read and Record data will be on file at Intersil.

100% Static Burn-In 2 Method 1015, 24 Hours at +125oC Min
100% Interim Electrical Test 2 (Note 1)
100% Dynamic Burn-In Method 1015, 240 Hours at +125

or 180 Hours at +135

o

C
100% Interim Electrical Test 3 (Note 1)
100% Final Electrical Test
100% Fine and Gross Seal Method 1014
100% Radiographics Method 2012 (2 Views)
100% External Visual Method 2009
Group A (All Tests) Method 5005 (Class S)
Group B (Optional) Method 5005 (Class S) (Note 2)
Group D (Optional) Method 5005 (Class S) (Note 2)
CSI and/or GSI (Optional) (Note 2)
Data Package Generation (Note 3)

o

C

Propagation Delay Timing Diagram and Load Circuit

VIH

TPLH

INPUT

VS

TPHL

OUTPUT

PARAMETER ACS UNITS

VCC 4.50 V
VIH 4.50 V
VS 2.25 V
VIL 0 V
GND 0 V

5

VS

VSS

VOH

VOL

DUT TEST

CL

50pF

AC VOLTAGE LEVELS

POINT

RL
500Ω

Spec Number 518849

Die Characteristics

ACS86MS

DIE DIMENSIONS:

88 mils x 88 mils

2.24mm x 2.24mm

METALLIZATION:

Type: AlSiCu
Metal 1 Thickness: 6.75k
Metal 2 Thickness: 9k

Å (Min), 8.25kÅ (Max)

Å (Min), 11kÅ (Max)

GLASSIVATION:

Type: SiO

2

Thickness: 8kÅ ±1kÅ

Metallization Mask Layout

DIE ATTACH:

Material: Silver Glass or JM7000 Polymer after 7/1/95

WORST CASE CURRENT DENSITY:

< 2.0 x 10

BOND PAD SIZE:

> 4.3 mils x 4.3 mils
> 110µm x 110µm

ACS86MS

(2) (1) (13)

A1 B4B1

VCC

(14)

5

A/cm

2

Y1 (3)

A2 (4)

NC

B2 (5)

(6) (7) (8)

GND Y3Y2

(9)
A3

(12) A4

(11) Y4

NC

(10) B3

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.

Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products, see web site http://www.intersil.com

Spec Number 518849

6