Datasheet ACR44U16LE, ACR44U14LE, ACR44U12LE, ACR44U08LE, ACR44U10LE Datasheet (DYNEX)

ACR44U

ACR44U

Fast Turn-off Asymmetric Thyristor

Advance Information

Replaces March 1998 version, DS4222-3.4 DS4222-4.0 January 2000

APPLICATIONS

■ High Frequency Applications

■ Regulated Power Supplies

■ Capacitor Discharge

■ Ultrasonic Generators

■ Induction Heating

FEATURES

■ The ACR44U is a glass passivated asymmetric
thyristor which has exceptionally fast turn-off capabilities
combined with good turn-on characteristics.

VOLTAGE RATINGS

Type Number Repetitive Peak

Off-state Voltage

V

DRM

V

ACR44U 16LE
ACR44U 14LE
ACR44U 12LE
ACR44U 10LE
ACR44U 08LE

1600
1400
1200
1000

800

Repetitive Peak

Reverse Voltage

V

RRM

V

2
2
2
2
2

KEY PARAMETERS

V

DRM

I

T(AV)

I

TSM

dVdt* 600V/

1600V

44A

550A

µs

dI/dt 2000A/µs
t

q

*dV/dt Available to 1000V/µs

6.0µs

Lower voltage grades available.

See Package Details for further information.

Outline type code: SO28.

CURRENT RATINGS

Symbol Parameter Conditions UnitsMax.

I

T(AV)

I

T(RMS)

I

Mean on-state current

RMS value

T

Continuous (direct) on-state current

Half wave resistive load, T

= 70oC69A

T

case

T

= 85oC57A

case

= 80oC44A

case

1/7

ACR44U

SURGE RATINGS

Symbol

I

TSM

2

tI

I

Parameter

Surge (non-repetitive) forward current

2

t for fusing 1500 A2s

10ms half sine; T

Conditions Max. Units

= 125oC

case

THERMAL AND MECHANICAL DATA

Symbol Parameter

th(j-c)

th(c-h)

T

vj

T

stg

- 3.5

Thermal resistance - junction to caseR

Thermal resistance - case to heatsinkR

Virtual junction temperature

Storage temperature range

Mounting torque

d.c.
Mounting torque 3.5Nm

with mounting compound
On-state (conducting) - 125

Conditions Min. Max. Units

DYNAMIC CHARACTERISTICS

550 A

- 0.35

0.25-

-55 125

4.0 Nm

o

C/W

o

C/W

o

o

C

C

T

= 125˚C unless otherwise stated.

case

ParameterSymbol Conditions

V

TM

I

RRM/IDRM

Maximum on-state voltage At 100A peak, T

Peak reverse and off-state current At V

dV/dt Maximum linear rate of rise of off-state voltage To V

V

T(TO)

r

T

I

L

I

H

t

d

q

Threshold voltage -

On-state slope resistance -

Latching current

Holding current -

Delay time VD = 300V, gate source = 15V, 15Ω

Turn-off time (with antiparallel diode)t

= 25oC

case

, T

RRM/VDRM

DRM Tj

From V
tr = 50ns

= 125oC, gate open circuit

DRM

= 125oC

case

to 125A. Gate source 15V, 15Ω

-

I

= 50A, square wave tp = 50µs, Tj = 120˚C,

T

dI

/dt = 50A/µs, dV/dt = 600V/µs to V

R

gate voltage at turn-off 3.5-4.5V. VR = -1V.

DRM

Typ. Max. Units

-V

- 20/10 mA

- 600*V/µs

- 2000 A/µsRate of rise of on-state currentdI/dt

- 13.3 mΩ

120 - mA

25 - mA

- 250 ns

,

2.7

1.5-V

µs6.0-

* Available to 1000V/µs.

2/7

GATE TRIGGER CHARACTERISTICS AND RATINGS

ACR44U

V

V

V

I

I

FGM

P

G(AV)

GT

GT

FGM

RGM

GM

Gate trigger voltage V

Gate trigger current

V

Peak forward gate voltage - - 40 V

Peak reverse gate voltage

Peak forward gate current -

Peak gate power -

Average gate power

Average time 10ms maxP

WAVEFORM OF GATE VOLTAGE AT TURN-OFF

= 12V, RL = 30Ω, T

DWM

= 12V, RL = 30Ω, T

DWM

ConditionsParameterSymbol

= 25oC

case

= 25oC

case

Typ.

0.9 3.0 V

-

Max. Units

60 200 mA

-10V

-10A

-40W

Forward

Reverse

-10W

-6W

+

I

T

0

­a) Anode current waveform

+

V

a

0

­b) Anode voltage waveform

+

V

gt

0

­c) Gate voltage waveform

3/7

ACR44U

CURVES

250

200

- (A)

T

150

Measured under pulse

conditions

Tj = 25˚C

100

- (V)

G

10

100

Tj = 125˚C

Instantaneous on-state current I

50

0

1.0 2.0 3.0 4.0
Instantaneous on-state voltage V

- (V)

Fig.1 Maximum (limit) on-state characteristics

10W t

Upper limit 99%

40W t

p

= 10ms

p

= 10µs

4/7

1.0

Gate trigger voltage V

= -40˚C
T

= 25˚C

j

T

= 125˚C

j

T

0.1

0.01 0.1 1.0 10
Gate trigger current I

j

Lower limit 1%

- (A)

G

Fig.2 Gate characteristics

ACR44U

40

30

Conditions: Peak on-state current = 8µs (Half sine wave)
T

= 25˚C, Gate current = 0.5A

case

V

T

I

T

10% I

T

0t

20

Initial on-state voltage - (V)

10

Zero time is taken at initial

device current = 10% I

T

0

0 500 1000 1500 2000 2500 3000

Time - (ns)

Fig.3 Typical initial on-state voltage vs time

150

Time

100

- (A)

PK

7mJ
5mJ

4mJ

50

Peak current I

3mJ
2mJ

1mJ

0

0 102030405060

Pulse width t

- (µs)

p

Fig.4 Maximum energy loss per pulse when switching a half sinusoidal pulse from 600V

5/7

ACR44U

10.0

8.0

- (µs)

q

6.0

Turn-off time t

4.0

2.0
0

Fig.5 Variation of turn-off time with commutating dV/dt

200

Reverse gate bias -3.5 to -4V
No gate bias

400 600

Commutating dV/dt - (V/µs)

800

1000

12.0

10.0

8.0

- (µs)

q

6.0

Turn-off time t

4.0

2.0
20

Fig.6 Variation of turn-off time with case temperature

40

Reverse gate bias -3.5 to -4V
No gate bias

60 80

Case temperature - (˚C)

100

120

6/7

ACR44U

PACKAGE DETAILS

For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.

Collector Hex. 17.35mm AF max

Cathode Ø4.0

Gate Ø1.53
min

24

11.5

Thread 1/4 in 28 UNF 2A

Nominal weight: 16.5g

Package outline type code: SO28

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e-mail: [e-mail]

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DYNEX POWER INC.

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Datasheet Annotations:

Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-

Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.

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© Dynex Semiconductor 2000 Publication No. DS4222-4 Issue No. 4.0 January 2000
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM

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