Datasheet AAT9125IAS-T1, AAT9125 Datasheet (Analogic Technologies)

AAT9125

30V N-Channel Power MOSFET

General Description

The AAT9125 30V N-Channel Power MOSFET is a
member of AnalogicTech's TrenchDMOS™ prod­uct family. Using the ultra-high density proprietary
TrenchDMOS technology, this product demon­strates high power handling and small size.

Applications

• DC-DC converters for mobile CPUs

• Battery-powered portable equipment

• High power density switch-mode supplies

• Point-of-use Power Supplies

Features

•V

DS(MAX)

•I

D(MAX)

• Low R

•9 mΩ @V

• 14 mΩ @ VGS= 4.5V

= 30V

= 12.5A @ 25°C

:

DS(ON)

GS

SOP8 Package

Top View

DDDD

8765

1234
SSSG

PWMSwitch

= 10V

™

Preliminary Information

Absolute Maximum Ratings (T

=25°C unless otherwise noted)

A

Symbol Description Value Units

V

DS

V

GS

I

D

I

DM

I

S

P

D

T

, T

J

STG

Drain-Source Voltage 30
Gate-Source Voltage ±20

Continuous Drain Current @ TJ=150°C

Pulsed Drain Current ±52
Continuous Source Current (Source-Drain Diode)

Maximum Power Dissipation

Operating Junction and Storage Temperature Range -55 to 150 °C

1

1

TA= 25°C ±12.5
TA= 70°C ±10

1

TA= 25°C 2.5
TA= 70°C 1.6

2.25

Thermal Characteristics

Symbol Description Value Units

R

θJA

R

θJC

Note 1: Mounted on 1” x 1” FR4 Copper Board, 10 sec pulse width

Typical Junction-to-Ambient
Typical Junction-to-Case 25 °C/W

1

50 °C/W

V

A

W

9125.2001.12.0.9 1

AAT9125

30V N-Channel Power MOSFET

Electrical Characteristics (T

=25°C unless otherwise noted)

J

Symbol Description Conditions Min Typ Max Units

DC Characteristics

BV

DSS

R

DS(ON)

I

D(ON)

V

GS(th)

I

GSS

I

DSS

g

fs

Dynamic Characteristics

Q

G

Q

GT

Q

GS

Q

GD

t

D(ON)

t

R

t

D(OFF)

t

F

Source-Drain Diode Characteristics

V

SD

I

S

Note 2: Pulse test: Pulse Width = 300µs
Note 3: Guaranteed by design. Not subjected to production testing.

Drain-Source Breakdown Voltage VGS=0V, ID=250µA 30 V

VGS=10V, ID=12A 7.5 9

Drain-Source ON-Resistance

On-State Drain Current

2

VGS=4.5V, ID=10A 11.5 14

2

VGS=10V ,VDS=5V (Pulsed) 52 A
Gate Threshold Voltage VGS=VDS, ID=250µA 1.0 V
Gate-Body Leakage Current VGS=±20V, VDS=0V ±100 nA

V

=0V,VDS=30V 1

Drain Source Leakage Current

Forward Transconductance

3

2

GS

VGS=0V,VDS=30V, TJ=55°C 5

VDS=15V, ID=12.5A 30 S

Total Gate Charge VDS=15V, ID=12.5A, VGS=5V 31 50 nC
Total Gate Charge VDS=15V, ID=12.5A, VGS=10V 60 100 nC
Gate-Source Charge VDS=15V, ID=12.5A, VGS=10V 10 nC
Gate-Drain Charge VDS=15V, ID=12.5A, VGS=10V 9 nC
Turn-ON Delay VDD=15V, VGS=10V, RD=1.2Ω, RG=6Ω 20 35 ns
Turn-ON Rise Time VDD=15V, VGS=10V, RD=1.2Ω , RG=6Ω 14 30 ns
Turn-OFF Delay VDD=15V, VGS=10V, RD=1.2Ω , RG=6Ω 100 160 ns
Turn-OFF Fall Time VDD=15V, VGS=10V, RD=1.2Ω , RG=6Ω 38 80 ns

Source-Drain Forward Voltage 2VGS=0, IS=2.25A 1.1 V
Continuous Diode Current TA=25ºC 2.25 A

mΩ

µA

2 9125.2001.12.0.9

Typical Characteristics

(TJ= 25ºC unless otherwise noted)

AAT9125

30V N-Channel Power MOSFET

Forward Characteristics

50

4V

3.5V

3V

40

30

(A)

D

I

20

10

0

0 12345

6V

10V

4.5V

5V

2V

VD (V)

R

vs. V

50

40

30

(mW)

20

DS(ON)

R

10

DS(ON)

5A

15A

10A

G

Normalized R

3

2.5

2

at gate = 10 V

1.5

1

DS(ON)

R
/

0.5

DS(ON)

0

R

0 10203040 50

5 V

3.5 V

6 V

DS(ON)

4 V

4.5 V

10 V

ID (A)

Transfer

50

(A)

D

I

40

30

20

10

VG=V

D

0

02 46 810

VG (V)

Source to Drain Voltage

100

10

(A)

SD

I

1

0.1

0.4 0.6 0.8 1 1.2

VSD (V)

0

0 12345

VG (V)

Gate Charge Characteristics

10

8

6

4

2

Gate Voltage (V)

0

0 102030 40 5060

Gate Charge (nC)

9125.2001.12.0.9 3

Ordering Information

AAT9125

30V N-Channel Power MOSFET

Package Marking

SOP-8 AAT9125IAS-B1 AAT9125IAS-T1

Package Information

SOP-8

E

H

D

7(4x)

A

A2

b

y

A1

e

Q

Part Number

Bulk Tape and Reel

Dim

Millimeters Inches

Min Max Min Max

A 1.35 1.75 0.053 0.069
A1 0.10 0.25 0.004 0.010
A2 1.45 0.057

B 0.33 0.51 0.013 0.020

C 0.19 0.25 0.007 0.010

D 4.80 5.00 0.189 0.197

E 3.80 4.00 0.150 0.157

e 1.27 0.050

H 5.80 6.20 0.228 0.244

L 0.40 1.27 0.016 0.050

c

L

Y 0.00 0.10 0.000 0.004

θ10° 8° 0° 8°

Note:

1. PACKAGE BODY SIZES EXCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.

2. TOLERANCE 0.1000mm (4mil) UNLESS
OTHERWISE SPECIFIED

3. COPLANARITY: 0.1000mm

4. DIMENSION L IS MEASURED IN GAGE PLANE.

5. CONTROLLING DIMENSION IS MILLIMETER;
CONVERTED INCH DIMENSIONS ARE NOT
NECESSARILY EXACT.

Advanced Analogic Technologies, Inc.

1250 Oakmead Parkway, Suite 310, Sunnyvale, CA 94086
Phone [phone]
Fax [phone]

4 9125.2001.12.0.9