
AAT9121
30V N-Channel Power MOSFET
General Description
The AAT9121 30V N-Channel Power MOSFET is a
member of AnalogicTech's TrenchDMOS™ product family. Using the ultra-high density proprietary
TrenchDMOS technology, this product demonstrates high power handling and small size.
Applications
• DC-DC converters for mobile CPUs
• Battery-powered portable equipment
• High power density DC - DC supplies
• Power supplies
Features
•V
DS(MAX)
•I
D(MAX)
• Low Gate Charge
• Low R
• 24 mΩ @VGS= 10V
• 35 mΩ @ VGS= 4.5V
= 30V
= 8A @ 25°C
:
DS(ON)
SOP-8 Package
Top View
DDDD
8765
1234
SSSG
PWMSwitch
™
Preliminary Information
Absolute Maximum Ratings (T
=25°C unless otherwise noted)
A
Symbol Description Value Units
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
, T
J
STG
Drain-Source Voltage 30
Gate-Source Voltage ±20
Continuous Drain Current @ TJ=150°C
Pulsed Drain Current ±24
Continuous Source Current (Source-Drain Diode)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range -55 to 150 °C
1
1
TA= 25°C ±8.0
TA= 70°C ±6.4
1
TA= 25°C 2.5
TA= 70°C 1.6
2.25
Thermal Characteristics
Symbol Description Value Units
R
θJA
R
θJC
Note 1: Mounted on 1” x 1” FR4 Copper Board, 10 sec pulse width.
Typical Junction-to-Ambient
Typical Junction-to-Case 28 °C/W
1
50 °C/W
V
A
W
9121.2001.12.0.9 1

AAT9121
30V N-Channel Power MOSFET
Electrical Characteristics (T
=25°C unless otherwise noted)
J
Symbol Description Conditions Min Typ Max Units
DC Characteristics
BV
DSS
R
DS(ON)
I
D(ON)
V
GS(th)
I
GSS
I
DSS
g
fs
Dynamic Characteristics
Q
Q
GT
Q
GS
Q
GD
t
D(ON)
t
R
t
D(OFF)
t
F
Source-Drain Diode Characteristics
V
SD
I
S
Note 2: Pulse test: Pulse Width = 300µs
Note 3: Guaranteed by design. Not subjected to production testing.
Drain-Source Breakdown Voltage VGS=0V, ID=250µA 30 V
VGS=10V, ID=8A 16 24
Drain-Source ON-Resistance
On-State Drain Current
2
VGS=4.5V, ID=6.6A 28 35
2
VGS=10V ,VDS=5V (Pulsed) 24 A
Gate Threshold Voltage VGS=VDS, ID=250µA 1.0 V
Gate-Body Leakage Current VGS=±20V, VDS=0V ±100 nA
V
=0V,VDS=30V 1
Drain Source Leakage Current
Forward Transconductance
3
Total Gate Charge VDS=15V, ID=8A, VGS=5V 10.5 16 nC
G
2
GS
VGS=0V,VDS=30V, TJ=55°C 5
VDS=15V, ID=8A 15 S
Total Gate Charge VDS=15V, ID=8A, VGS=10V 20.5 28 nC
Gate-Source Charge VDS=15V, ID=8A, VGS=10V 3.8 nC
Gate-Drain Charge VDS=15V, ID=8A, VGS=10V 2.9 nC
Turn-ON Delay VDD=15V, VGS=10V, RD=1.8Ω , RG=6Ω 915 ns
Turn-ON Rise Time VDD=15V, VGS=10V, RD=1.8Ω , RG=6Ω 12 20 ns
Turn-OFF Delay VDD=15V, VGS=10V, RD=1.8Ω , RG=6Ω 38 55 ns
Turn-OFF Fall Time VDD=15V, VGS=10V, RD=1.8Ω , RG=6Ω 19 28 ns
Source-Drain Forward Voltage 2VGS=0, IS=2.25A 1.1 V
Continuous Diode Current
2
TA=25ºC 2.25 A
mΩ
µA
2 9121.2001.12.0.9

Typical Characteristics
(TJ= 25ºC unless otherwise noted)
AAT9121
30V N-Channel Power MOSFET
Forward Characteristics
30
10V
25
20
15
(A)
D
I
10
5
0
0 12345
100
80
60
(mΩ)
40
DS(ON)
R
20
0
02 46 810
6V
5V
10A
5A
R
DS(ON)
VD (V)
vs. V
15A
VG (V)
G
4V
3V
4.5V
3.5V2V
Normalized R
3
2.5
at gate = 10 V
1.5
DS(ON)
/ R
0.5
DS(ON)
R
3.5 V
2
1
0
0 5 10 15 20 25 30
4 V
6 V
DS(ON)
4.5 V
5 V
10 V
Transfer
30
25
20
15
(A)
D
I
10
5
0
0 12345
VG=V
D
VG (V)
Source to Drain Voltage
100
10
(A)
SD
I
1
0.1
0.4 0.6 0.8 1 1.2
VSD (V)
10
8
6
4
Gate Voltage (V)
2
0
Gate Charge Characteristics
0 5 10 15 20 25
Gate Charge (nC)
9121.2001.12.0.9 3

Ordering Information
AAT9121
30V N-Channel Power MOSFET
Package Marking
SOP-8 AAT9121IAS-B1 AAT9121IAS-T1
Package Information
SOP-8
E
H
D
7(4x)
A
A2
b
y
A1
e
Q
Part Number
Bulk Tape and Reel
Dim
Millimeters Inches
Min Max Min Max
A 1.35 1.75 0.053 0.069
A1 0.10 0.25 0.004 0.010
A2 1.45 0.057
B 0.33 0.51 0.013 0.020
C 0.19 0.25 0.007 0.010
D 4.80 5.00 0.189 0.197
E 3.80 4.00 0.150 0.157
e 1.27 0.050
H 5.80 6.20 0.228 0.244
L 0.40 1.27 0.016 0.050
Y 0.00 0.10 0.000 0.004
c
L
θ10° 8° 0° 8°
Note:
1. PACKAGE BODY SIZES EXCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
2. TOLERANCE 0.1000mm (4mil) UNLESS
OTHERWISE SPECIFIED
3. COPLANARITY: 0.1000mm
4. DIMENSION L IS MEASURED IN GAGE PLANE.
5. CONTROLLING DIMENSION IS MILLIMETER;
CONVERTED INCH DIMENSIONS ARE NOT
NECESSARILY EXACT.
Advanced Analogic Technologies, Inc.
1250 Oakmead Parkway, Suite 310, Sunnyvale, CA 94086
Phone (408) 524-9684
Fax (408) 524-9689
4 9121.2001.12.0.9