128K x 36 & 256K x 18 Late Write Synchronous Fast SRAM with Pipelined Data Output
Revision History
Rev. No.HistoryIssue DateRemark
2.0Add JTAG standardFebruary 12, 1999Preliminary
PRELIMINARY (February, 1999, Version 2.0)AMIC Technology, Inc.
Page 2
A65H73361/A65H83181 Series
128K x 36 & 256K x 18 Late Write Synchronous
Preliminary Fast SRAM with Pipelined Data Output
Features
n Fast access times: 2.5/3.0/3.5ns
n 128k x 36 or 256k x 18 organizations
n CMOS technology
n Register to register synchronous operation with self-
timed late write
n Single +3.3V ±5% power supply
n Individual byte write and global write
General Description
The A65H73361 and A65H83181 are 128k words by 36
bits and 256k words by 18 bits late write synchronous
4Mb SRAMS built using high performance CMOS
process.
The differential clock are used to control the timing of
read/write operation and all internal operations are selftimed. The positive edge triggered CK clock input
controls all addresses write-enables and Synchronous
select and data ins are registered.
n HSTL input & output levels
n Boundary scan(JTAG) IEEE 1149.1 compatible
n Asynchronous output enable
n Sleep mode (ZZ)
n Programmable impedance output drivers
n JEDEC Standard pinout and boundary scan order
n 7 x 17 bump plastic ball grid array (PBGA) package
The data outs are controlled by the output registers off
the next positive clock edge to be updated.
The internal write buffer enables write data to be
accepted on the rising edge of the clock one cycle after
address and control signals.
The SRAM uses HSTL I/O interfaces with programmable
impedance output drivers allowing the outputs to match
the impedance of the circuit traces which reduces signal
reflections.
PRELIMINARY (February, 1999, Version 2.0)1AMIC Technology, Inc.
Page 3
Pin Configuration
A65H73361/A65H83181 Series
A65H73361
1234567
A
V
DDQ
B
NCNCSA8NCSA11NCNC
C
NCSA6SA9VDDSA10SA15NC
D
DQ
18
E
DQ20DQ21V
F
V
DDQDQ22VSS
G
DQ23DQ
H
DQ25DQ
J
V
DDQVDDVrefVDDVrefVDDVDDQ
K
DQ34DQ35VSSCKVSSDQ8DQ
L
DQ32DQ
M
V
DDQ
N
DQ
29
P
DQ
27
R
NCM1V
T
NCNC
U
V
DDQ
SA7NCSA16SA14V
SA
5
DQ
VSSZQVSSDQ10DQ
19
SS
24
SBW
V
26
SS
33
SBWdCKSBW
DQ
V
31
SS
DQ
VSSSA
30
V
DQ
SS
25
SA
4
SA3SA2SA
C
VSSDQ12DQ
SS
VSSDQ13V
G
NC
SBW
NCVSSDQ17DQ
VSSDQ4V
SW
V
SS
0
V
SA
SS
1
M
DD
2
13
TMSTDITCKTDONC
DQ15DQ
b
DQ6DQ
a
DQ3DQ
DQ1DQ
SA
NCZZ
A65H83181
1234567
A
DDQ
9
11
DDQ
14
16
7
5
DDQ
2
0
NC
12
V
DDQ
V
DDQ
B
NCNCSA8NCSA11NCNC
C
NCSA6SA9VDDSA10SA15NC
D
DQ
9
E
NCDQ12V
F
V
DDQ
G
NCDQ
H
DQ16NCNCVSSDQ8NC
J
V
DDQVDDVrefVDDVrefVDDVDDQ
K
NCDQ17VSSCKVSSNCDQ
L
DQ14NC
M
V
DDQ
N
DQ
11
P
NCV
R
NCM1V
T
NC
U
V
DDQ
SA7NCSA16SA14V
SA
5
NC
VSSZQVSSDQ1NC
VSSNCDQ
SS
VSSDQ4V
G
NCNCDQ
V
SS
CKSBW
SW
SA
VSSNCV
V
0
V
1
M
DD
a
SS
SS
2
17
NCV
15
DQ
13
NC
DQ
10
SA
4
SA
2
SS
SS
SBW
b
V
SS
V
SS
V
SS
VSSSA
SS
SA3NCSA
TMSTDITCKTDONC
DQ6NC
DQ3NC
NCDQ
NC
SA
13
SA
12
V
DDQ
2
DDQ
5
7
DDQ
0
ZZ
DDQ
PRELIMINARY (February, 1999, Version 2.0)2AMIC Technology, Inc.
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to this device.
These are stress ratings only. Functional operation of
this device at these or any other conditions above those
indicated in the operational sections of this specification
is not implied and exposure the absolute maximum
rating conditions for extended periods may affect device
reliability.
Recommended DC Operating Conditions (TJ = 0 to 110°C)
ParameterSymbolMin.Typ.Max.UnitsNotes
Supply VoltageVDD3.153.33.47V1
Output Driver Supply VoltageVDDQ1.41.51.6V1
Input High VoltageVIHVREF+0.1-VDDQ+0.3V1, 2
Input Low VoltageVIL-0.3-VREF-0.1V1, 3
Input reference VoltageVREF0.680.750.90V1, 6
Clocks Signal VoltageVIN-CLK-0.3-VDDQ+0.3V1, 4
Differential Clocks Signal VoltageVDIF-CLK0.1-VDDQ+0.6V1, 5
Clocks Common Mode VoltageVCM-CLK0.55-0.90V1
Output CurrentIOUT-58mA
1.All voltage reference to VSS. All VDD VDDQ and VSS pins must be connected.
PRELIMINARY (February, 1999, Version 2.0)8AMIC Technology, Inc.
Page 10
A65H73361/A65H83181 Series
AC Characteristics (TJ= 0 to +110°C, VDD = 3.3V ± 5%)
ParameterSymbol-5-6-7UnitsNotes
Min.Max.Min.Max.Min.Max.
Cycle TimetKHKH5-6.0-7.0-ns
Clock High Pulse WidthtKHKL1.5-1.5-1.5-ns
Clock Low Pulse WidthtKLKH1.5-1.5-1.5-ns
Clock to Output ValidtKHQV-2.53.0-3.5ns1
Address Setup TimetAVKH0.5-0.5-0.5-ns4
Address Hold TimetKHAX1.0-1.0-1.0-ns4
Sync Select Setup TimetSVKH0.5-0.5-0.5-ns4
Sync Select Hold TimetKHSX1.0-1.0-1.0-ns4
Write Enables Setup TimetWVKH0.5-0.5-0.5-ns4
Write Enables Hold TimetKHWX1.0-1.0-1.0-ns4
Data In Setup TimetDVKH0.5-0.5-0.5-ns4
Data In Hold TimetKHDX1.0-1.0-1.0-ns4
Data Out Hold TimetKHQX0.5-0.5-0.5-ns1
Clock High to Output High-ztKHQZ-2.5-3.0-3.5ns1, 2
Clock high to Output ActivetXHQX41.0-1.0-1.0-ns1, 2
Output Enable to High-ztGHQZ-2.53.0-3.5ns1, 2
Output Enable to Low-ztGLQX0.5-0.5-0.5-ns1, 2
Output Enable to Output ValidtGLQV-2.5-3.0-3.5ns1
Output Enable Setup TimetGHKH0.5-0.5-0.5-ns1, 3
Output Enable Hold TimetKHGX1.5-1.5-1.5-ns1, 3
Sleep Mode Recovery TimetZZR5-6-7-ns
Sleep Mode Enable TimetZZE-5-6-7ns
1.See AC Test Loading figure on page 8.
2.Transitions are measured ± 200mV from steady state voltage.
3.Output Driver Impedance update specifications for G induced updates. Write and Deselect cycles will also induce
Output Driver Updates during High-z.
4.Inuse conditions VIH, VIL, Trise, Tfall of inputs must be withim 20% of VIH, VIL, Trise, Tfall of Clock.
PRELIMINARY (February, 1999, Version 2.0)9AMIC Technology, Inc.
Page 11
Timing Diagram (Read and Deselect Cycles)
t
KLKH
t
CK
KHKL
t
AVKH
t
KHKH
A65H73361/A65H83181 Series
SA
SS
SW
G
DQ
A1A2A3A4
t
t
KHWX
t
GHQZ
t
WVKH
KHAX
t
GLQV
t
SVKH
t
KHQX
t
KHSX
t
KHQZ
A3
Q1Q2Q3
t
t
GLQX
KHQV
t
KHQX4
t
Q4
KHQV
PRELIMINARY (February, 1999, Version 2.0)10AMIC Technology, Inc.
Page 12
Timing Diagram (Read Write Cycles)
t
KLKH
t
KHKL
CK
t
KHKH
t
A65H73361/A65H83181 Series
AVKH
SA
SS
SW
SBW
DQ
A1A2A3A4
t
t
SVKH
t
WVKH
t
WVKH
t
KHSX
KHAX
t
t
KHWX
KHWX
G
t
KHQZ
t
KHDX
A2
t
XHWX
t
WVKH
t
XHWX
t
WVKH
t
GHQZ
t
KHQV
Q3
Q2
D4Q1D2
t
KHQV
t
DVKH
t
KHQX4
t
DVKH
t
KHDX
NOTES:
1.D2 is the input data write in memory location A2.
2.Q2 is output data read from the write buffer, as a result of address A2 being a match from the last write cycle address.
PRELIMINARY (February, 1999, Version 2.0)11AMIC Technology, Inc.
Page 13
Timing Diagram (Sleep Mode)
CK
zz
t
ZZR
DQ
A65H73361/A65H83181 Series
t
KHKH
t
ZZE
PRELIMINARY (February, 1999, Version 2.0)12AMIC Technology, Inc.
Page 14
A65H73361/A65H83181 Series
IEEE 1149.1 TAP AND BOUNDARY SCAN
The SRAM provides a limited set of JTAG functions intended to test the interconnection between SRAM I/Os and printed
circuit board traces or other components. There is no multiplexer in the path from I/O pins to the RAM core.
In conformance with IEEE std. 1149.1, the SRAM contains a TAP controller, Instruction register, Boundary Scan register,
Bypass register and ID register.
The TAP controller has a standard 16-state machine that resets internally upon power-up, therefore, TRST signal is not
required.
Signal List
l TCK : Test Clock
l TMS : Test Mode Select
l TDI : Test Data In
l TDO : Test Data Out
Caution: TCK, TMS, TDI must be tied down, even if JTAG is not used.
JTAG Recommended DC Operating Conditions (TJ = 0 to 110 °C)
ParameterSymbolMin.Typ.Max.UnitsNotes
JTAG Input High VoltageVIH12.2-VDD + 0.3V1
JTAG Input Low VoltageVIL1-03-0.8V1
JTAG Output High LevelVOH12.4--V1,2
JTAG Output Low LevelVOL1--0.4V1,3
1. All JTAG Inputs/Outputs are LVTTL Compatible only.
2. IOH1 = -8mA at 2.4V.
3. IOL1 = +8mA at 0.4V.
JTAG Recommended DC Operating Conditions (TJ = 0 to 110 °C)
ParameterSymbolConditionsUnitsNotes
Input Pulse High LevelVIH13.0V
Input Pulse Low LevelVIL10.0V
Input Rise TimeTR12.0ns
Input Fall TimeTF12.0ns
Input and Output Timing Reference Level1.5V1
1. See AC Test Loading on page 8.
PRELIMINARY (February, 1999, Version 2.0)13AMIC Technology, Inc.
Page 15
A65H73361/A65H83181 Series
JTAG AC Characteristics (TJ = 0 to 110 °C, VDD = 3.3V ± 5%)