The A623308 is a low operating current 65,536-bit static
random access memory organized as 8,192 words by 8
bits and operates on a single 5V power supply.
Inputs and three-state outputs are TTL compatible and
allow for direct interfacing with common system bus
structures.
Pin Configurations
n SOPn TSOP
n Extended operating temperature range: 0°C to 70°C
for -S series, -25°C to 85°C for -SI series, -40°C to
85°C for -SU series.
n Full static operation, no clock or refreshing required
n All inputs and outputs are directly TTL compatible
n Common I/O using three-state output
n Data retention voltage: 2.0V (min.)
n Available in 28-pin SOP and TSOP (forward type)
packages
Minimum standby power is drawn by this device when
CE is at a high level, independent of the other input
levels.
Data retention is guaranteed at a power supply voltage
as low as 2.0V.
NC
A12
I/O0
I/O1
I/O
GND
A7
A6
A5
A4
A3
A2
A1
A0
2
1
2
3
4
5
A623308M
6
7
8
9
10
11
12
13
1415
VCC
28
WE
27
NC
26
A8
25
A9
24
A11
23
OE
22
A10
21
CE
20
7
I/O
19
I/O6
18
I/O5
17
I/O4
16
I/O3
VCC
A11
WE
A12
1
OE
2
3
A9
4
A8
5
NC
6
7
8
NC
9
10
A7
11
A6
12
A5
13
A4
14
A3
~
~
A623308V
~
~
28
A10
CE
27
26
25
24
23
22
21
20
19
18
17
16
15
I/O
I/O6
I/O
I/O4
I/O3
VSS
I/O2
I/O
I/O0
A0
A1
A2
7
5
1
PRELIMINARY (December, 2002, Version 0.3)1 AMIC Technology, Corp.
Page 3
A623308 Series
Block Diagram
CE
OE
WE
A11
A12
I/O
I/O
A5
A9
0
7
CONTORL
CIRCUIT
ROW
DECODER
INPUT
DATA
CIRCUIT
128 X 512
MEMORY ARRAY
COLUMN I/O
COLUMN DECODER
A10A4A0
VCC
GND
Pin Descriptions - SOP
Pin No. Symbol Description
1,26 NC No Connection
2-10, 21, 23-25 A0 - A12 Address Input
11-13, 15-19 I/O0 - I/O7Data Inputs/Outputs
14 GND Ground
20
22
27
CE
OE
WE
28 VCC Power Supply
Chip Enable
Output Enable
Write Enable
Pin Description-TSOP
Pin No. Symbol Description
5,8 NC No Connection
1
OE
2-4, 9-17, 28 A0 - A12 Address Input
7 VCC Power Supply
6
WE
18-20, 22-26 I/O0 - I/O7Data Inputs/Outputs
21 GND Ground
27
CE
Output Enable
Write Enable
Chip Enable
PRELIMINARY (December, 2002, Version 0.3)2AMIC Technology, Corp.
Page 4
A623308 Series
Recommended DC Operating Conditions
(TA = 0°C to +70°C, -25°C to +85°C or -40°C to +85°C)
DC Electrical Characteristics (TA = 0°C to +70°C, -25°C to +85°C or -40°C to +85°C, VCC = 5.0V ± 10%, GND = 0V)
*Comments
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device.
These are stress ratings only. Functional operation of this
device at these or any other conditions above those
indicated in the operational sections of this specification
is not implied and exposure to absolute maximum rating
conditions for extended periods may affect device
reliability.
Symbol Parameter
Min. Max. Min. Max.
ILI
ILO
ICC
ICC1
ICC2
Input Leakage
Current
Output Leakage
Current
Active Power
Supply Current
Dynamic
Operating Current
Dynamic
Operating Current
A623308-70S A623308-70SI/SU
- 1 - 1
- 1 - 1
- 5 - 5 mA
- 35 - 35 mA
-
5
-
5
Unit Conditions
µA
µA
mA
VIN = GND to VCC
CE = VIH or OE = VIH or
WE = VIH
VI/O = GND to VCC
CE = VIL, II/O = 0mA
Min. Cycle, Duty = 100%
CE = VIL, II/O = 0mA
CE = VIL, VIH = VCC
VIL = 0V, f = 1 MHz
II/O = 0 mA
PRELIMINARY (December, 2002, Version 0.3)3AMIC Technology, Corp.
Page 5
A623308 Series
CE OE WE
DC Electrical Characteristics (continued)
Symbol Parameter
Min. Max. Min. Max.
ISB
ISB1
VOL
VOH
Supply Current
Standby Power
Output Low
Voltage
Output High
Voltage
A623308-70S A623308-70SI/SU
- 0.5 - 0.5 mA
- 10 - 15
- 0.4 - 0.4 V IOL = 2.1mA
2.4 - 2.4 - V IOH = -1.0mA
Unit Conditions
CE = VIH
µA
CE ≥ VCC - 0.2V
VIN≥ 0V
Truth Table
Mode
Standby H X X High Z ISB, ISB1
Output Disable L H H High Z ICC, ICC1, ICC2
Read L L H DOUTICC, ICC1, ICC2
I/O Operation Supply Current
Write L X L DINICC, ICC1, ICC2
Note: X: H or L
Capacitance (TA = 25°C, f = 1.0 MHz)
Symbol Parameter Min. Max. Unit Conditions
CIN* Input Capacitance 6 pF VIN = 0V
CI/O* Input/Output Capacitance 8 pF VI/O = 0V
* These parameters are sampled and not 100% tested.
PRELIMINARY (December, 2002, Version 0.3)4AMIC Technology, Corp.
Page 6
A623308 Series
AC Characteristics (TA = 0°C to +70°C, -25°C to +85°C or -40°C to +85°C, VCC = 5.0V ± 10%)
Symbol Parameter
Min. Max.
Read Cycle
tRCRead Cycle Time 70 - ns
tAAAddress Access Time - 70 ns
tACEChip Enable Access Time - 70 ns
tOEOutput Enable to Output Valid - 35 ns
tCLZChip Enable to Output in Low Z 10 - ns
tOLZOutput Enable to Output in Low Z 5 - ns
tCHZChip Disable to Output in High Z - 25 ns
tOHZOutput Disable to Output in High Z - 25 ns
tOHOutput Hold from Address Change 5 - ns
Write Cycle
A623308-70S/SI/SU
Unit
tWCWrite Cycle Time 70 - ns
tCWChip Enable to End of Write 60 - ns
tASAddress Set up Time 0 - ns
tAWAddress Valid to End of Write 60 - ns
tWPWrite Pulse Width 50 - ns
tWRWrite Recovery Time 0 - ns
tWHZWrite to Output in High Z - 30 ns
tDWData to Write Time Overlap 30 - ns
tDHData Hold from Write Time 0 - ns
tOWOutput Active from End of Write 5 - ns
Notes: tCHZ, tOHZ and tWHZ are defined as the time at which the outputs achieve the open circuit condition and are not referred to output voltage levels.
PRELIMINARY (December, 2002, Version 0.3)5AMIC Technology, Corp.
Page 7
A623308 Series
Timing Waveforms
Read Cycle 1
(1)
tRC
Address
tAA
OE
DOUT
Read Cycle 2
Address
DOUT
CE
(1, 2, 4)
tCLZ
tOE
5
tOLZ
tACE
5
tCHZ
tOH
5
tOHZ
5
tRC
tAA
tOH
tOH
PRELIMINARY (December, 2002, Version 0.3)6AMIC Technology, Corp.
Page 8
A623308 Series
Timing Waveforms (continued)
Read Cycle 3
Notes: 1. WE is high for Read Cycle.
2. Device is continuously enabled, CE = VIL.
3. Address valid prior to or coincident with CE transition low.
4. OE = VIL.
5. Transition is measured ±500mV from steady state. This parameter is sampled and not 100% tested.
Write Cycle 1
(Write Enable Controlled)
CE
DOUT
(1, 3, 4)
(6)
tCLZ
tACE
5
tCHZ
5
Address
CE
WE
DOUT
DIN
tWC
tAW
5
tCW
(4)
1
tAS
tWHZ
2
tWP
7
tWR
3
tDHtDW
7
tOW
PRELIMINARY (December, 2002, Version 0.3)7AMIC Technology, Corp.
Page 9
A623308 Series
Timing Waveforms (continued)
Write Cycle 2
(Chip Enable Controlled)
Address
CE
WE
(6)
tWC
tAWtWR
5
tCW
(4)
1
tAS
2
tWP
3
DIN
DOUT
tWHZ
tDW
7
tDH
Notes: 1. tAS is measured from the address valid to the beginning of Write.
2. A Write occurs during the overlap (tWP) of a low CE and a low WE.
3. tWR is measured from the earliest of CE or WE going high to the end of the Write cycle.
4. If the CE low transition occurs simultaneously with the WE low transition or after the WE transition, outputs
remain in a high impedance state.
5. tCW is measured from the later of CE going low to the end of Write.
6. OE level is high or low.
7. Transition is measured ±500mV from steady. This parameter is sampled and not 100% tested.
PRELIMINARY (December, 2002, Version 0.3)8AMIC Technology, Corp.
Page 10
A623308 Series
AC Test Conditions
Input Pulse Levels 0V, 3.0V
Input Rise And Fall Time 5 ns
Input and Output Timing Reference Levels 1.5V
Output Load See Figure 1,2
+5V
1800Ω
I/O
990Ω
* Including scope and jig.
I/O
CL
30pF
*
+5V
1800Ω
990Ω
* Including scope and jig.
CL
5pF
*
Figure 1. Output Load Figure 2. Output Load for tCLZtOLZ , tCHZ, tOHZ, tWHZ, and tow
Data Retention Characteristics (TA = 0°C to +70°C, -25°C to +85°C or -40°C to +85°C)
Symbol Parameter Min. Max. Unit Conditions
VDRVCC for Data Retention 2.0 5.5 V
ICCDR
Data Retention Current
-
3
tCDRChip Disable to Data Retention Time 0 - ns
tROperation Recovery Time tRC- ns
CE ≥ VCC - 0.2V
VCC = 2.0V,
µA
CE ≥ VCC - 0.2V
VIN≥ 0V
See Retention Waveform
Low VCC Data Retention Waveform
DATA RETENTION MODE
VCC
CE
4.5V
tCDR
VIH
VDR ≥ 2.0V
CE ≥ VDR - 0.2V
PRELIMINARY (December, 2002, Version 0.3)9AMIC Technology, Corp.
4.5V
tR
VIH
Page 11
A623308 Series
Ordering Information
Part No. Access Time (ns)
A623308M-70S 35 10 28L SOP
A623308V-70S 35 10 28L TSOP (Forward)
A623308M-70SI 35 15 28L SOP
A623308V-70SI 35 15 28L TSOP (Forward)
A623308M-70SU 35 15 28L SOP
A623308V-70SU
70
Operating Current
Max. (mA)
35 15 28L TSOP (Forward)
Standby Current
Max. (µA)
Package
PRELIMINARY (December, 2002, Version 0.3)10AMIC Technology, Corp.