Datasheet A61L6316V-15I, A61L6316V-15, A61L6316V-12I, A61L6316V-12, A61L6316V-10I Datasheet (AMICC)

A61L6316 Series

64K X 16 BIT HIGH SPEED CMOS SRAM

Document Title
64K X 16 BIT HIGH SPEED CMOS SRAM

Revision History

Rev. No. History Issue Date Remark

0.0 Initial issue July 14, 2000 Preliminary

1.0 Final spec. release May 8, 2001 Final
Add -10 spec.
Change ICC1 from 120mA to 220mA (-12)
Change ICC1 from 100mA to 210mA (-15)
Change ISB1 from 8mA to 12mA
Change ICDR from 1mA to 5mA
Add tBE, tBLZ, tBHZ, tBW parameters

1.1

Add -25°C ~ +85°C grade

July 17, 2002

(July, 2002, Version 1.1) AMIC Technology, Inc.

A61L6316 Series

64K X 16 BIT HIGH SPEED CMOS SRAM

Features General Description

n Center power pinout
n Supply voltage: -10: 3.3V+10%, -5%

-12, -15: 3.3V±10%

n Access times: 10/12/15 ns (max.)
n Current: Operating: -10: 230mA (max)

-12: 220mA (max.)

-15: 210mA (max.)
Standby: TTL: 25mA (max.)
CMOS: 12mA (max.)
n Extended operating temperature range: -25°C to 85°C

for -I series

n Full static operation, no clock or refreshing required
n All inputs and outputs are directly TTL-compatible
n Common I/O using three-state output
n Data retention voltage: 2V (min.)
n Available in 44-pin 400mil SOJ and 44-pin 400mil

TSOP(II) forward packages.

The A61L6316 is a high speed 1,048,576-bit static
random access memory organized as 65,536 words by 16
bits and operates on low power supply voltage from 3.0V
to 3.6V. It is built using AMIC’s high performance CMOS
process.
Inputs and three-state outputs are TTL compatible and
allow for direct interfacing with common system bus
structures.
The chip enable input is provided for POWER-DOWN, to
disable the device. Two byte enable inputs and an output
enable input are included for easy interfacing.
Data retention is guaranteed at a power supply voltage as
low as 2V.

Product Family

Product

Family

A61L6316

Operating

Temperature

0°C ~ +70°C

-25°C ~ +85°C

1. Typical values are measured at VCC = 3.3V, TA = 25°C and not 100% tested.

2. Data retention current VCC = 2.0V.

VCC Range

Speed

Data Retention

(ICCDR, Typ.)

3.0V ~ 3.6V 10/12/15 ns 3mA 5mA

Pin Configuration

n SOJ / TSOP (II)

CE
I/O0
I/O1
I/O2
I/O3

VCC

GND

I/O4
I/O5
I/O6
I/O7
WE

NC

1A0

A1

2

A2

3
4

A3
A4

5
6
7
8
9
10
11
12
13
14
15
16
17
18

A5

19

A6

20

A7

21

A8

22

44

A15

43

A14

42

A13

41

OE

40

HB

39

LB

38

A61L6316S(V)

I/O15

37

I/O14

36

I/O13

35

I/O12

34

GND

33

VCC

32

I/O11

31

I/O10

30

I/O9
I/O8

29
28

NC

27

A12

26

A11

25

A10

24

A9

23

NC

Power Dissipation

Standby

(ISB1, Typ.)

Package

Type

44L SOP

44L TSOP(II)

(July, 2002, Version 1.1) 1 AMIC Technology, Inc.

A61L6316 Series

Block Diagram

A0

A14

A15

I/O

I/O

VCC

GND

DECODER

0

INPUT

DATA

CIRCUIT

7

1,048,576-BIT

MEMORY ARRAY

COLUMN I/O

INPUT

DATA

CIRCUIT

I/O

I/O

8

15

CE
LB
HB

OE

WE

CONTROL

CIRCUIT

(July, 2002, Version 1.1) 2 AMIC Technology, Inc.

A61L6316 Series

Pin Description - SOJ/TSOP(II)

Pin No. Symbol Description

1 - 5, 18 - 21,

24 - 27,42 - 44

6

7 - 10, 13 - 16,

29 - 32, 35 - 38

17

39

40

41

11, 33 VCC Power

12, 34 GND Ground

22 , 23, 28 NC No Connection

A0 - A15 Address Inputs

CE

I/O0 - I/O15 Data Input/Outputs

WE

LB

HB

OE

Chip Enable Input

Write Enable Input

Byte Enable Input (I/O0 to I/O7)

Byte Enable Input (I/O8 to I/O15)

Output Enable Input

Recommended DC Operating Conditions

(TA = 0°C to + 70°C or -25°C to +85°C)

Symbol Parameter Min. Typ. Max. Unit

*VCC Supply Voltage 3.0 3.3 3.6 V

GND Ground 0 0 0 V

VIH Input High Voltage 2.2 - VCC + 0.3 V

VIL Input Low Voltage -0.3 - 0.8 V

CL Output Load - - 30 pF

* -10 VCCmin: 3.135V

(July, 2002, Version 1.1) 3 AMIC Technology, Inc.

A61L6316 Series

Absolute Maximum Ratings*

VCC to GND . . . . . . . . . . . . . . . . . . . . . . -0.5V to +4.6V

IN, IN/OUT Volt to GND . . . . . . . . -0.5V to VCC + 0.5V

Operating Temperature, Topr . . . . . . . . . . . . . . . . . . . . .

. . . . . . . . . . . . . . . . . . . 0°C to +70°C or -25°C to +85°C

Storage Temperature, Tstg . . . . . . . . . -55°C to +125°C

Power Dissipation, PT . . . . . . . . . . . . . . . . . . . . . 0.7W

Soldering Temp. & Time . . . . . . . . . . . . . 260°C, 10 sec

*Comments

Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to this device.
These are stress ratings only. Functional operation of this
device at these or any other conditions above those
indicated in the operational sections of this specification
is not implied or intended. Exposure to the absolute
maximum rating conditions for extended periods may
affect device reliability.

DC Electrical Characteristics (TA = 0°C to + 70°C or -25°C to +85°C, -10: 3.3V+10%, -5%; -12, -15: 3.3V±10%)

Symbol Parameter

Min. Max. Min. Max. Min. Max.

ILI

ILO

Input Leakage - 2 - 2 - 2

Output Leakage - 2 - 2 - 2

ICC1 (2) Dynamic Operating

Current

ISB - 25 - 25 - 25 mA

ISB1

Standby Power
Supply Current

A61L6316-10 A61L6316-12 A61L6316-15

- 230 - 220 - 210 mA

-

12

12

-

-

12

Unit Conditions

VIN = GND to VCC

µA

CE = VIH, OE = VIH

µA

VI/O = GND to VCC

CE = VIL, II/O = 0 mA

Min. Cycle, Duty = 100%

CE = VIH

mA

CE ≥ VCC - 0.2V,

VIN ≥ VCC -0.2V or

VIN ≤ 0.2V
VOL Output Low Voltage - 0.4 - 0.4 - 0.4 V IOL = 8 mA
VOH Output High Voltage 2.4 - 2.4 - 2.4 - V IOH = -4 mA

Notes: 1. VIL = -3.0V for pulses less than 20 ns.

2. ICC1 is dependent on output loading, cycle rates, and Read/Write patterns.

(July, 2002, Version 1.1) 4 AMIC Technology, Inc.

A61L6316 Series

CE OE WE LB HB

Truth Table

I/O0 to I/O7 Mode I/O8 to I/O15 Mode VCC Current

H X X X X Not selected Not selected ISB1, ISB

L L Read Read ICC1, ICC2, ICC

L L H L H Read High - Z ICC1, ICC2, ICC

H L High - Z Read ICC1, ICC2, ICC

L L Write Write ICC1, ICC2, ICC

L X L L H Write Not Write/Hi - Z ICC1, ICC2, ICC

H L Not Write/Hi - Z Write ICC1, ICC2, ICC

L X High - Z High - Z ICC1, ICC2, ICC

L H H

X L High - Z High - Z ICC1, ICC2, ICC

X X X H H Not selected Not selected ISB1, ISB

Note: X = H or L

Capacitance (TA = 25°C, f = 1.0MHz)

Symbol Parameter Min. Max. Unit Conditions

CIN* Input Capacitance - 6 pF VIN = 0V

CI/O* Input/Output Capacitance - 8 pF VI/O = 0V

* These parameters are sampled and not 100% tested.

(July, 2002, Version 1.1) 5 AMIC Technology, Inc.

A61L6316 Series

AC Characteristics (TA = 0°C to +70°C or -25°C to +85°C, -10: 3.3V+10%, -5%; -12, -15: 3.3V±10%)

Symbol Parameter A61L6316-10 A61L6316-12 A61L6316-15 Unit

Min. Max. Min. Max. Min. Max.

Read Cycle
tRC Read Cycle Time 10 - 12 - 15 - ns
tAA Address Access Time - 10 - 12 - 15 ns
tACE Chip Enable Access Time - 10 - 12 - 15 ns
tBE Byte Enable Access Time - 5 - 6 - 8 ns
tOE Output Enable to Output Valid - 5 - 6 - 8 ns
tCLZ Chip Enable to Output in Low Z 3 - 3 - 3 - ns
tOLZ Output Enable to Output in Low Z 0 - 0 - 0 - ns
tBLZ Byte Enable to Output in Low Z 0 - 0 - 0 - ns
tCHZ Chip Disable Output in High Z 0 5 0 6 - 8 ns
tBHZ Byte Disable to Output in High Z 0 5 0 6 0 8 ns
tOHZ Output Disable to Output in High Z 0 5 0 6 0 8 ns
tOH Output Hold from Address Change 3 - 3 - 3 - ns
Write Cycle

tWC Write Cycle Time 10 - 12 - 15 - ns
tCW Chip Enable to End of Write 8 - 10 - 12 - ns
tBW Byte Enable to End of Write 8 - 10 - 12 - ns
tAS Address Setup Time of Write 0 - 0 - 0 - ns
tAW Address Valid to End of Write 8 - 10 - 12 - ns
tWP Write Pulse Width 8 - 10 - 12 - ns
tWR Write Recovery Time 0 - 0 - 0 - ns
tWHZ Write to Output in High Z 0 5 0 6 0 8 ns
tDW Data to Write Time Overlap 5 - 6 - 7 - ns
tDH Data Hold from Write Time 0 - 0 - 0 - ns
tOW Output Active from End of Write 3 - 3 - 3 - ns

Notes: tCHZ, tBHZ, tOHZ and tWHZ are defined as the time at which the outputs achieve the open circuit condition and are not
referred to output voltage levels.

(July, 2002, Version 1.1) 6 AMIC Technology, Inc.

A61L6316 Series

Timing Waveforms

Read Cycle 1

Address

DOUT

(1, 2, 4)

tRC

tAA

tOH

tOH

Read Cycle 2

Address

HB, LB

OE

DOUT

CE

(1, 2, 3)

tRC

tAA

tCLZ

tACE

5

tBE

5

tBLZ

tOE

5

tOLZ

tOHZ

5

tBHZ

tCHZ

5

5

Notes: 1. WE is high for Read Cycle.

2. Device is continuously enabled CE = VIL, HB = VIL and, or LB = VIL.

3. Address valid prior to or coincident with CE and (HB and, or LB) transition low.

4. OE = VIL.

5. Transition is measured ±200mV from steady state. This parameter is sampled and not 100% tested.

(July, 2002, Version 1.1) 7 AMIC Technology, Inc.

A61L6316 Series

Timing Waveforms (continued)

Write Cycle 1
(Write Enable Controlled)

tWC

Address

3

tAW

tCW

CE

tBW

HB, LB

tWR

WE

DATA IN

DATA OUT

1

tAS

4

tWHZ

tWP

2

tDW

tDH

tOW

(July, 2002, Version 1.1) 8 AMIC Technology, Inc.

A61L6316 Series

Timing Waveforms (continued)

Write Cycle 2
(Chip Enable Controlled)

tWC

Address

CE

HB, LB

WE

DATA IN

DATA OUT

tAW

tWP

tCW

2

tBW

tDW

1

tAS

4

tWHZ

tWR

3

tDH

tOW

(July, 2002, Version 1.1) 9 AMIC Technology, Inc.

A61L6316 Series

Timing Waveforms (continued)

Write Cycle 3
(Byte Enable Controlled)

tWC

Address

tAW

tCW

CE

3

tWR

HB, LB

WE

tWP

tBW

2

1

tAS

tDH

tOW

DATA IN

DATA OUT

tWHZ

tDW

4

Notes: 1. tAS is measured from the address valid to the beginning of Write.

2. A Write occurs during the overlap (tWP, tBW) of a low CE , WE and (HB and, or LB).

3. tWR is measured from the earliest of CE or WE or (HB and, or LB) going high to the end of the Write cycle.

4. OE level is high or low.

5. Transition is measured ±200mV from steady state. This parameter is sampled and not 100% tested.

(July, 2002, Version 1.1) 10 AMIC Technology, Inc.

A61L6316 Series

AC Test Conditions

Input Pulse Levels 0V to 3.0V

Input Rise And Fall Time 3 ns

Input and Output Timing Reference Levels 1.5 V

Output Load See Figures 1 and 2

+3.3V

317

Ω

OUTPUT

ZO=50

RL=50

Ω

VT=1.5V

Ω

I/O

* Including scope and jig.

351

Ω

5pF*

Figure 1. Output Load Figure 2. Output Load for tCLZ, tOLZ,
tCHZ, tOHZ, tWHZ, and tOW

Data Retention Characteristics (TA = 0°C to 70°C or -25°C to +85°C)

Symbol Parameter Min. Max. Unit Conditions

VDR VCC for Data Retention 2 3.6 V

ICCDR Data Retention Current

tCDR

Chip Disable to Data Retention
Time

-

5

mA

0 - ns

tR Operation Recovery Time TRC* - ms

≥ VCC - 0.2V

CE

VCC = 2.0V

≥ VCC - 0.2V

CE

VIN ≥ VCC - 0.2V or
VIN ≤ 0.2V

See Retention Waveform

tRC = Read Cycle Time

(July, 2002, Version 1.1) 11 AMIC Technology, Inc.

A61L6316 Series

Low VCC Data Retention Waveform

DATA RETENTION MODE

VCC

CE

3.0V

tCDR

VIH

VDR ≥ 2V

CE ≥ VDR - 0.2V

3.0V
tR

tVR

VIH

Ordering Information

Part No. Access Time (ns)

Operating Current

Max. (mA)

A61L6316S-10 44L SOJ

A61L6316S-10I 44L SOJ

10 230 12

A61L6316V-10 44L TSOP(II)

A61L6316V-10I

A61L6316S-12 44L SOJ

A61L6316S-12I 44L SOJ

12 220 12

A61L6316V-12 44L TSOP(II)

Standby Current

Max. (mA)

Package

44L TSOP(II)

A61L6316V-12I

44L TSOP(II)

A61L6316S-15 44L SOJ

A61L6316S-15I 44L SOJ

15 210 12

A61L6316V-15 44L TSOP(II)

A61L6316V-15I

44L TSOP(II)

* I series for -25°C to +85°C

(July, 2002, Version 1.1) 12 AMIC Technology, Inc.

A61L6316 Series

Package Information

SOJ 44L Outline Dimensions unit: inches/mm

D

44 23

E1

221

E

C

A2

y

b

b1

Seating Plane

e

Min

0.025"

0.004

y

D

Symbol

A 0.128 0.138 0.148 3.25 3.51 3.76
A1 0.082 - - 2.08 - ­A2 0.105 0.110 0.115 2.67 2.79 2.92

b 0.015 - 0.020 0.38 - 0.51

b1 0.026 0.028 0.032 0.66 0.71 0.81

C 0.007 - 0.013 0.18 - 0.21

D 1.120 1.125 1.130 28.45 28.58 28.70

E 0.435 0.440 0.445 11.05 11.18 11.30

E1
E2

e 0.050 BSC 1.27 BSC
R1 0.030 0.035 0.040 0.76 0.89 1.02

θ 0°

Dimensions in inches Dimensions in mm

Min Nom Max Min Nom Max

0.394 0.400 0.405 10.01 10.16 10.29

0.370 BSC 9.40 BSC

-

10° 0°

A

A1

R1

-

10°

E2

θ

Notes:

1. The maximum value of dimension D includes end flash.

2. Dimension E does not include resin fins.

3. Dimension E1 is for PC Board surface mount pad pitch design
reference only.

(July, 2002, Version 1.1) 13 AMIC Technology, Inc.

A61L6316 Series

Package Information

TSOP 44L (Type II) Outline Dimensions unit: inches/mm

44

E

E1

θ

L

1

D

A

L1

c

L1

ZD

b

e

y

D

A1 A2

L

Symbol

A - - 0.047 - - 1.20
A1 0.002 - 0.006 0.05 - 0.15
A2 0.037 0.039 0.041 0.95 1.00 1.05

b 0.012 - 0.018 0.30 - 0.45

c 0.005 - 0.008 0.12 - 0.21

D 0.720 0.725 0.730 18.28 18.41 18.54
ZD 0.032 REF 0.805 REF

E 0.455 0.463 0.471 11.56 11.76 11.96
E1 0.395 0.400 0.405 10.03 10.16 10.29

L 0.019 0.023 0.027 0.49 0.59 0.69

L1 0.031 REF 0.80 REF

e 0.031 BSC 0.80 BSC

y - - 0.004 - - 0.10

θ

Notes:

1. The maximum value of dimension D includes end flash.

2. Dimension E1 does not include resin fins.

3. Dimension ZD includes end flash.

Dimensions in inches Dimensions in mm

Min Nom Max Min Nom Max

0° - 5° 0° - 5°

(July, 2002, Version 1.1) 14 AMIC Technology, Inc.