Datasheet A29DL323UV, A29DL323UG, A29DL323TV, A29DL323TG Datasheet (AMICC)

Page 1
A29DL323 Series
Power supply current
32M-Bit CMOS Low Voltage Dual Operation Flash Memory
Preliminary 4M-Byte by 8-Bit (Byte Mode) / 2M-Word by 16-Bit (Word Mode)
Features
erase / program and read
n Bank organization: 2 banks (8 Mbits + 24 Mbits) n Memory organization:
- 4,194,304 words x 8 bits (BYTE mode)
- 2,097,152 words x 16 bits (WORD mode) n Sector organization:
71 sectors (8 Kbytes / 4 Kwords × 8 sectors, 64 Kbytes / 32 Kwords × 63 sectors)
n 2 types of sector organization
- T type: Boot sector allocated to the highest address
- B type: Boot sector allocated to the lowest address
n 3-state output n Automatic program
- Program suspend / resume
n Unlock bypass program n Automatic erase
- Chip erase
- Sector erase (sectors can be combined freely)
n Erase suspend / resume n Program / Erase completion detection
- Detection through data polling and toggle bits
- Detection through RY/BY pin
(sector) (sector)
n Sector group protection
- Any sector group can be protected
- Any protected sector group can be temporary unprotected
n Sectors can be used for boot application n Hardware reset and standby using
RESET
pin
n Automatic sleep mode n Boot block sector protect by WP (ACC) pin
n Conforms to common flash memory interface (CFI) n Extra One Time Protect Sector provided
Part No. Access
time
(Max.)
A29DL323 90ns 2.7V~
Operating
supply
voltage
(Active mode)
(Max.)
Standby
current (Max.)
16mA 30mA 5A
3.6V
n Operating ambient temperature: -40 to 85°C n Program / erase time
- Program: 9.0 µs / byte (TYP.)
11.0 µs / word (TYP.)
- Sector erase: 0.7 s (TYP.)
n Number of program / erase: 1,000,000 times (MIN.) n Package options
- 48-pin TSOP (I) or 63-ball TFBGA
General Description
The A29DL323 is a flash memory organized of 33,554,432 bits and 71 sectors. Sectors of this memory can be erased at a low voltage (2.7 to 3.6 V) supplied from a single power source, or the contents of the entire chip can be erased. Two modes of memory organization, BYTE mode (4,194,304 words × 8 bits) and WORD mode (2,097,152 words × 16 bits), are selectable so that the memory can be programmed in byte or word units. The A29DL323 can be read while its contents are being erased or programmed. The memory cell is divided into two banks. While sectors in one bank are being erased or programmed, data can be read from the other bank thanks to the simultaneous execution architecture. The banks are 8 Mbits and 24 Mbits. This flash memory comes in two types. The T type has a boot sector located at the highest address (sector) and the B type has a boot sector at the lowest address (sector).
PRELIMINARY (May, 2002, Version 0.0) 1 AMIC Technology, Inc.
Because the A29DL323 enables the boot sector to be erased, it is ideal for storing a boot program. In addition, program code that controls the flash memory can be also stored, and the program code can be programmed or erased without the need to load it into RAM. Eight small sectors for storing parameters are provided, each of which can be erased in 8 Kbytes units. Once a program or erase command sequence has been executed, an automatic program or automatic erase function internally executes program or erase and verification automatically. Because the A29DL323 can be electrically erased or programmed by writing an instruction, data can be reprogrammed on-board after the flash memory has been installed in a system, making it suitable for a wide range of applications.
Page 2
A29DL323 Series
BYTE
WE
WP
Pin Configurations
n TSOP (I)
48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 I/O
32 I/O 31 30 29
28 27 26
A16A15 BYTE
GND I/O15(A-1) I/O
7
I/O
14
I/O
6
I/O
13
I/O
5
I/O
12
I/O
4
VCC I/O
11
I/O
3
I/O
10 2 9
I/O
1
I/O
8
I/O 0 OE GND CE A0
RESET
WP (ACC)
RY/BY
1
A14
2
A13
3
A12
4
A11
5
A10
6
A9
7
A8
8 9
A19 A20
10 11
WE
12
NC
13 14 15
A18
16
A17
17
A7
18
A6
19
A5
20
A4
21
A3
22
A2
23
A1
24 25
A29DL323V
n
TFBGA
Top View Bottom View
8 7 6 5 4 3 2 1
A B C D E F G H J K L M ABCDEFGHJKLM
Top View
A B C D E F G H J K L M
1
NC NC NC NC
2 NC NC A13 A12 A14 A15 A16
I/O15(A-1) GND NC NC
3 A9 A8 A10 A11 I/O7 I/O14 I/O13 I/O6 4
5 6 A7 A17 A6 A5 I/O0 I/O8 I/O9 I/O1
7 NC A3 A4 A2 A1 A0
RY/BY
RESET
(ACC)
NC A19 I/O
5 I/O12 VCC I/O4
A18 A20 I/O2 I/O10 I/O11 I/O3
CE
OE
GND NC NC
8 NC NC NC NC
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Page 3
A29DL323 Series
WE
BYTE
WP
Block Diagram
VCC GND
A0-A20
Address
Buffers
Bank 2 Address
Bank / Sector
Decoder
Address LatchAddress Latch
X-Decoder
Y-Decoder
Cell Matrix
(Bank 2)
Y-Gating
WP(ACC)
RESET
WE
BYTE
CE
OE
Pin Descriptions
State
Control
(Command
Register)
RY/BY
Bank 1 Address
I/O0 - I/O14 Data Inputs/Outputs
I/O15 (A-1)
Program / Erase
Voltage Generator
Y-Decoder
X-Decoder
Pin No. Description
A0 – A20 Address Inputs
I/O15
Data Input/Output, Word Mode
A-1 LSB Address Input, Byte Mode
CE
OE
RESET
Chip Enable Write Enable Output Enable Hardware Reset Input Mode Select
SA / WC
Data Latch
SA / WC
Y-Gating
Cell Matrix
(Bank 1)
I/O0 - I/O
15
Input / Output
Buffers
(A-1)
RY/BY
(ACC)
Ready/ Write Protect (Accelerated) Input
BUSY
- Output
GND Ground VCC Power Supply
Note
NC
No Connection
Note: Some signals can be applied because this pin is not connected to the inside of the chip.
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Page 4
A29DL323 Series
WE
BYTE
BY
WP
Input / Output Pin Function
Pin Name Input / Output Function
A0 to A20 Input Address input pins.
A0 to A20 are used differently in the BYTE mode and the WORD mode. BYTE MODE
A0 to A20 are used as the upper 21 bits of total 22 bits of address input pin. (The least significant bit (A-1) is combined to I/O15.)
WORD MODE
A0 to A20 are used as 21 bits address input pin.
I/O0 to I/O14 Input / Output Data input / output pins.
I/O0 to I/O14 are used differently in the BYTE mode and the WORD mode. BYTE MODE
I/O0 to I/O7 are used as the 8 bits data input / output pins. I/O8 to I/O14 are Hi-Z.
WORD MODE
I/O0 to I/O14 are used as the lower 15 bits of total 16 bits of data input / output pins. (The most significant bit (I/O15) is combined to A-1.)
I/O15, A-1 Input / Output I/O15, A1 are used differently in the BYTE mode and the WORD mode.
BYTE MODE
The least significant address input pin (A-1) WORD MODE The most significant data input / output pin (I/O15)
CE
OE
RESET
RY/
(ACC)
VCC - Supply Voltage GND - Ground
NC - No Connection
Input This pin inputs the signal that activates the chip.
When high level, the chip enters the standby mode.
Input This pin inputs the read operation control signal.
When high level, output is Hi-Z.
Input This pin inputs the write operation control signal.
When low level, command input is accepted.
Input The pin for switching BYTE mode and WORD mode.
High level : WORD MODE (2M words x 16 bits)
Low level : BYTE MODE (4M words x 8 bits)
Input This pin inputs hardware reset.
When low level, hardware reset is performed. If 11.5 to 12.5 V is applied to
unprotect mode.
Output This pin indicates whether automatic program / erase is currently being executed. It uses
open drain connection. Low level indicates the busy state during which the device is performing automatic
program erase. High level indicates the device is in the ready state and will accept the next operation. In
this case, the device is either in the erase suspend mode or the standby mode.
Input This pin selects the boot block sector protect mode or accelerated mode.
Low level: The boot block (2 sectors) is protected.
High level: The boot block is unprotected.
VACC level: Accelerated mode is selected.
RESET
, the chip enters the temporary sector group
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A29DL323 Series
WP
CE
WE
WP
WP
Absolute Maximum Ratings*
Storage Temperature (Tstg) . . . . . . . . . . -55°C to + 125°C
Operating Ambient Temperature (TA) . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40°C to + 85°C
Input / Output Voltage with Respect to GND
(ACC),
All Pins except WP(ACC),
. . . . . . . . . . . . . -0.5V
Supply Voltage with Respect to GND (VCC)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 4.0V
RESET
. . . . . . . . . . . . -0.5V
RESET
Note1
to VCC + 0.4 (4.0V max.)
Note1
to 13.0V
. . . . . . . . . . . . . . .
Note2
Notes:
1. -2.0V (Min.) (Pulse width 20ns)
2. VCC + 0.5V (Max.) (Pulse width 20ns)
Bus Operations
The following table shows the operation modes of the dual operation flash memory. Before turning on power, input
Table 1. A29DL323 Bus Operations
Operation
Write BYTE mode L H L A-1 Address input Data input Hi-Z H Note3 WORD mode L H L X Address input Data input H Note3 Standby H X X X X X X Hi-Z Hi-Z H X Hardware reset / Standby X X X X X X X Hi-Z Hi-Z L X Output Disable L H H X X X X Hi-Z Hi-Z H X Temporary Sector Group Unprotect X X X X X X X Hi-Z or
Mode Boot Block Sector Protect X X X X X X X Hi-Z or
Accelerated Mode
Note: WhenOE = VIL, VIL can be applied to WE. WhenOE = VIH, a write operation is started. Remarks: 1. H : VIH, L : VIL, : VIH or VIL, VID : 11.5 V to 12.5 V, VACC : 8.5 V to 9.5 V
2. If an address is held longer than the minimum read cycle time (tRC), the automatic sleep mode is set.
3. If WP(ACC)=VIL, sector 0,1,140, and 141 remain protected. If depends on whether they were last protected or unprotected using the method described in “Sector/Sector Block Protection and Unprotection”. If WP(ACC)=VHH, all sectors will be unprotected.
BYTE mode L L H A-1 Address input Data output Hi-Z H X Read (Note) WORD mode L L H X Address input Data output H X
BYTE mode L L H A-1 Address input Data output Hi-Z H X Automatic Sleep WORD mode L L H X Address input Data output H X
BYTE mode L H L A-1 Address input Data input Hi-Z H VACC WORD mode L H L X Address input Data input H VACC
OE
*Comments
Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to this device. These are stress ratings only. Functional operation of this device at these or any other conditions above those indicated in the operational sections of these specification is not implied or intended. Exposure to the absolute maximum rating conditions for extended periods may affect device reliability.
Recommended Operating Conditions
Operating Ambient Temperature (TA) . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40°C to +85°C
Supply Voltage (VCC) . . . . . . . . . . . . . . . . . +2.7V to +3.6V
GND ± 0.2 V to the
I/O15,
A6 A1 A0 I/O0 to
A-1
RESET
(ACC)=VIH, protection on sectors 0,1,140, and 141
until VCC VCC (min.).
I/O8 to
I/O7
Data input / output
Data input / output
I/O15
RESET
VID Note3
X L
(ACC)
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A29DL323 Series
WE
Read Operation
The read operation is controlled by the OE and /OE. The /CE is used to select a device, and the OE controls data
output. The following three access times are used depending on the condition.
- Address access time (tACC): Time until valid data is output after an address has been determined
(however, after CE).
-
access time (tCE): Time until valid data is output
CE
after address).
-
OE
after OE has been determined (however, OE must be input after tACC-tOE, tCE-tOE after address and CE
have been determined).
On power-up, the device is automatically set in the read mode. To read the device without changing address immediately after power application, either execute
hardware reset or briefly lower CE to VIL from VIH. For the timing waveform, refer to Timing Waveform for
Read Cycle (1).
has been determined (however, after
CE
access time (tOE): Time until valid data is output
Write Operation
The operation of the device is controlled by writing commands to the registers. The command register is a function that latches the address and data necessary for executing an instruction and does not occupy the memory area. If an illegal address or data is written or if an address or data is written in the wrong sequence, the device is reset to the read mode.
Standby Mode
The standby mode is set when VIH is input to the CE. The current consumption in the standby mode can be lowered to 5 µA or less in two ways.
One is to use CE and and
RESET
erasing is being executed, the operating supply current (ICC2) does not decrease to 5µA or lower even if CE = VIH.
If a read operation is executed in the standby mode, data is output at CE access time. The other is to input GND ± 0.3 V to the
time, the level of CE is VIH or VIL. In this case, tRH is required for the device to return to the read mode from the
standby mode. For the timing waveform, refer to Timing Waveform for Read Cycle (2).
. However, while automatic programming or
RESET
. Input VCC ± 0.3 V to CE
RESET
. At this
Hardware Reset Pin
The device is reset to the read mode if VIL is input to the
RESET
tRH. While VIL is being input to the are ignored, and the output pins go into a Hi-Z state. If the voltage on current consumption can be lowered to 5µA or less. If VIH is input to the For the timing waveform, refer to Timing Waveform for
Read Cycle (2).
for the duration of tRP and VIH for the duration of
, all commands
RESET
RESET
RESET
is kept to GND ± 0.2 V at this time, the
, tREADY is required until data is output.
Output Disable Mode
Output from the device is disabled (Hi-Z state) if VIH is input to the OE.
Sector Group Protection
Protect the sector group by using a command. OE or WE control is no need.
Temporary Sector Group Unprotect
Protection of a sector group can be temporarily canceled. When VID is input to unprotect mode is set. If a protected sector is selected in
this mode, it can be programmed or erased. If the mode is canceled, the sector group is protected again. For the timing waveform, refer to Timing Waveform for Temporary Sector Group Unprotect.
RESET
, the temporary sector group
Product ID
Read the product ID code by using a command.
Automatic Sleep Mode
The automatic sleep mode is used to reduce the power consumption substantially during a read operation.
If an address is held longer than the minimum read cycle time (tRC), the sleep mode (low power consumption mode) is automatically set. In this mode, the
output data is latched and continuously output. In the automatic sleep mode, CE,
have to be controlled. At this time, the current consumption
, and OE do not
decreases to 5µA or less. During dual operation, however, the current consumption is power supply current (ICC6, ICC7). If the address is changed, the automatic sleep mode is canceled automatically, the device returns to the read mode, and the data of the newly input address is output.
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A29DL323 Series
WP
WP
Boot Block Sector Protect
The boot block sector protect mode protects the two sectors of the boot block. This mode is set when VIL is input to (ACC). If VIL is input to WP (ACC) even in the temporary
sector group unprotect mode, the boot block remains protected and protection of the other sectors is temporarily canceled.
Accelerated Mode
This mode is used to program the device at high speed, and the programming time can be shortened to about 60%. To program the device in the accelerated mode, input
VACC to command. Therefore, ordinary commands can be used for programming or detection of completion of programming.
If VACC is input to WP (ACC), the device is automatically set in the unlock bypass mode. Therefore, the unlock bypass set command and reset command are not necessary. The accelerated mode is automatically canceled
if the input of VACC to WP (ACC) is stopped.
(ACC) and use an unlock bypass program
Table 2. Dual Operation
Case Operation of Bank 1 Operation of Bank 2
1 Read mode Read mode 2 Read mode Product ID 3 Read mode Program (Note 1) 4 Read mode Erase (Note 2) 5 Product ID Read mode 6 Program (Note 1) Read mode 7 Erase (Note 2) Read mode
In the accelerated mode, protection of the sector group is temporarily canceled. Exercise care in programming the device at this time. For the timing waveform, refer to Timing Waveform for Accelerated Mode.
Dual Operation
This device can execute a program or erase operation and a read operation simultaneously. By selecting bank 1 or 2 by changing the bank address, one bank can execute a read operation while the other bank is executing a program or erase operation. When changing the bank address, no wait cycle is necessary. Note that two or more program or erase operation. When changing the bank address, no wait cycle is necessary. Note that two or more operations cannot be executed at the same time in the same bank. The following table shows the combinations of bank operations. For the timing waveform, refer to Timing Waveform for Dual Operation.
Notes 1. The program operation is suspended by the program suspend command, and addresses not
being programmed to at this time can only be read.
2. The erase operation is suspended by the erase suspend command. The sector not erased at this time can be read or programmed.
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Page 8
A29DL323 Series
Sector Size
Byte Mode
Table 3. A29DL323 Top Boot Block Sector Address Table
Bank Sector
Bank 1
Bank 2
SA70 1 1 1 1 1 1 1 1 1 8/4 3FFFFFH-3FE000H 1FFFFFH-1FF000H SA69 1 1 1 1 1 1 1 1 0 8/4 3FDFFFH-3FC000H 1FEFFFH-1FE000H SA68 1 1 1 1 1 1 1 0 1 8/4 3FBFFFH-3FA000H 1FDFFFH-1FD000H SA67 1 1 1 1 1 1 1 0 0 8/4 3F9FFFH-3F8000H 1FCFFFH-1FC000H SA66 1 1 1 1 1 1 0 1 1 8/4 3F7FFFH-3F6000H 1FBFFFH-1FB000H SA65 1 1 1 1 1 1 0 1 0 8/4 3F5FFFH-3F4000H 1FAFFFH-1FA000H SA64 1 1 1 1 1 1 0 0 1 8/4 3F3FFFH-3F2000H 1F9FFFH-1F9000H SA63 1 1 1 1 1 1 0 0 0 8/4 3F1FFFH-3F0000H 1F8FFFH-1F8000H SA62 1 1 1 1 1 0 X X X 64/32 3EFFFFH-3E0000H 1F7FFFH-1F0000H SA61 1 1 1 1 0 1 X X X 64/32 3DFFFFH-3D0000H 1EFFFFH-1E8000H SA60 1 1 1 1 0 0 X X X 64/32 3CFFFFH-3C0000H 1E7FFFH-1E0000H SA59 1 1 1 0 1 1 X X X 64/32 3BFFFFH-3B0000H 1DFFFFH-1D8000H SA58 1 1 1 0 1 0 X X X 64/32 3AFFFFH-3A0000H 1D7FFFH-1D0000H SA57 1 1 1 0 0 1 X X X 64/32 39FFFFH-390000H 1CFFFFH-1C8000H SA56 1 1 1 0 0 0 X X X 64/32 38FFFFH-380000H 1C7FFFH-1C0000H SA55 1 1 0 1 1 1 X X X 64/32 37FFFFH-370000H 1BFFFFH-1B8000H SA54 1 1 0 1 1 0 X X X 64/32 36FFFFH-360000H 1B7FFFH-1B0000H SA53 1 1 0 1 0 1 X X X 64/32 35FFFFH-350000H 1AFFFFH-1A8000H SA52 1 1 0 1 0 0 X X X 64/32 34FFFFH-340000H 1A7FFFH-1A0000H SA51 1 1 0 0 1 1 X X X 64/32 33FFFFH-330000H 19FFFFH-198000H SA50 1 1 0 0 1 0 X X X 64/32 32FFFFH-320000H 197FFFH-190000H SA49 1 1 0 0 0 1 X X X 64/32 31FFFFH-310000H 18FFFFH-188000H SA48 1 1 0 0 0 0 X X X 64/32 30FFFFH-300000H 187FFFH-180000H SA47 1 0 1 1 1 1 X X X 64/32 2FFFFFH-2F0000H 17FFFFH-178000H SA46 1 0 1 1 1 0 X X X 64/32 2EFFFFH-2E0000H 177FFFH-170000H SA45 1 0 1 1 0 1 X X X 64/32 2DFFFFH-2D0000H 16FFFFH-168000H SA44 1 0 1 1 0 0 X X X 64/32 2CFFFFH-2C0000H 167FFFH-160000H SA43 1 0 1 0 1 1 X X X 64/32 2BFFFFH-2B0000H 15FFFFH-158000H SA42 1 0 1 0 1 0 X X X 64/32 2AFFFFH-2A0000H 157FFFH-150000H SA41 1 0 1 0 0 1 X X X 64/32 29FFFFH-290000H 14FFFFH-148000H SA40 1 0 1 0 0 0 X X X 64/32 28FFFFH-280000H 147FFFH-140000H SA39 1 0 0 1 1 1 X X X 64/32 27FFFFH-270000H 13FFFFH-138000H SA38 1 0 0 1 1 0 X X X 64/32 26FFFFH-260000H 137FFFH-130000H SA37 1 0 0 1 0 1 X X X 64/32 25FFFFH-250000H 12FFFFH-128000H SA36 1 0 0 1 0 0 X X X 64/32 24FFFFH-240000H 127FFFH-120000H SA35 1 0 0 0 1 1 X X X 64/32 23FFFFH-230000H 11FFFFH-118000H
Sector Address Table Address Range (in hexadecimal)
Bank Address Table
A20 A19 A18 A17 A16 A15 A14 A13 A12
(Kbytes/ Kwords)
(x 8)
Word Mode
(x16)
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A29DL323 Series
Sector Size
Byte Mode
Table 3. A29DL323 Top Boot Block Sector Address Table (continued)
Bank Sector
Bank 2
SA34 1 0 0 0 1 0 X X X 64/32 22FFFFH-220000H 117FFFH-110000H SA33 1 0 0 0 1 1 X X X 64/32 21FFFFH-210000H 10FFFFH-108000H SA32 1 0 0 0 0 0 X X X 64/32 20FFFFH-200000H 107FFFH-100000H SA31 0 1 1 1 1 1 X X X 64/32 1FFFFFH-1F0000H 0FFFFFH-0F8000H SA30 0 1 1 1 1 0 X X X 64/32 1EFFFFH-1E0000H 0F7FFFH-0F0000H SA29 0 1 1 1 0 1 X X X 64/32 1DFFFFH-1D0000H 0EFFFFH-0E8000H SA28 0 1 1 1 0 0 X X X 64/32 1CFFFFH-1C0000H 0E7FFFH-0E0000H SA27 0 1 1 0 1 1 X X X 64/32 1BFFFFH-1B0000H 0DFFFFH-0D8000H SA26 0 1 1 0 1 0 X X X 64/32 1AFFFFH-1A0000H 0D7FFFH-0D0000H SA25 0 1 1 0 0 1 X X X 64/32 19FFFFH-190000H 0CFFFFH-0C8000H SA24 0 1 1 0 0 0 X X X 64/32 18FFFFH-180000H 0C7FFFH-0C0000H SA23 0 1 0 1 1 1 X X X 64/32 17FFFFH-170000H 0BFFFFH-0B8000H SA22 0 1 0 1 1 0 X X X 64/32 16FFFFH-160000H 0B7FFFH-0B0000H SA21 0 1 0 1 0 1 X X X 64/32 15FFFFH-150000H 0AFFFFH-0A8000H SA20 0 1 0 1 0 0 X X X 64/32 14FFFFH-140000H 0A7FFFH-0A0000H SA19 0 1 0 0 1 1 X X X 64/32 13FFFFH-130000H 09FFFFH-098000H SA18 0 1 0 0 1 0 X X X 64/32 12FFFFH-120000H 097FFFH-090000H SA17 0 1 0 0 0 1 X X X 64/32 11FFFFH-110000H 08FFFFH-088000H SA16 0 0 1 0 0 0 X X X 64/32 10FFFFH-100000H 087FFFH-080000H SA15 0 0 1 1 1 1 X X X 64/32 0FFFFFH-0F0000H 07FFFFH-078000H SA14 0 0 1 1 1 0 X X X 64/32 0EFFFFH-0E0000H 077FFFH-070000H SA13 0 0 1 1 0 1 X X X 64/32 0DFFFFH-0D0000H 06FFFFH-068000H SA12 0 0 1 1 0 0 X X X 64/32 0CFFFFH-0C0000H 067FFFH-060000H SA11 0 0 1 0 1 1 X X X 64/32 0BFFFFH-0B0000H 05FFFFH-058000H SA10 0 0 1 0 1 0 X X X 64/32 0AFFFFH-0A0000H 057FFFH-050000H
SA9 0 0 1 0 0 1 X X X 64/32 09FFFFH-090000H 04FFFFH-048000H SA8 0 0 1 0 0 0 X X X 64/32 08FFFFH-080000H 047FFFH-040000H SA7 0 0 0 1 1 1 X X X 64/32 07FFFFH-070000H 03FFFFH-038000H SA6 0 0 0 1 1 0 X X X 64/32 06FFFFH-060000H 037FFFH-030000H SA5 0 0 0 1 0 1 X X X 64/32 05FFFFH-050000H 02FFFFH-028000H SA4 0 0 0 1 0 0 X X X 64/32 04FFFFH-040000H 027FFFH-020000H SA3 0 0 0 0 1 1 X X X 64/32 03FFFFH-030000H 01FFFFH-018000H SA2 0 0 0 0 1 0 X X X 64/32 02FFFFH-020000H 017FFFH-010000H SA1 0 0 0 0 0 1 X X X 64/32 01FFFFH-010000H 00FFFFH-008000H SA0 0 0 0 0 0 0 X X X 64/32 00FFFFH-000000H 007FFFH-000000H
Sector Address Table Address Range (in hexadecimal)
Bank Address Table
A20 A19 A18 A17 A16 A15 A14 A13 A12
(Kbytes/ Kwords)
(x 8)
Word Mode
(x16)
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A29DL323 Series
Sector Size
Byte Mode
Table 4. A29DL323 Bottom Boot Block Sector Address Table
Bank Sector
Bank 2
SA70 1 1 1 1 1 1 X X X 64/32 3FFFFFH-3F0000H 1FFFFFH-1F8000H SA69 1 1 1 1 1 0 X X X 64/32 3EFFFFH-3E0000H 1F7FFFH-1F0000H SA68 1 1 1 1 0 1 X X X 64/32 3DFFFFH-3D0000H 1EFFFFH-1E8000H SA67 1 1 1 1 0 0 X X X 64/32 3CFFFFH-3C0000H 1E7FFFH-1E0000H SA66 1 1 1 0 1 1 X X X 64/32 3BFFFFH-3B0000H 1DFFFFH-1D8000H SA65 1 1 1 0 1 0 X X X 64/32 3AFFFFH-3A0000H 1D7FFFH-1D0000H SA64 1 1 1 0 0 1 X X X 64/32 39FFFFH-390000H 1CFFFFH-1C8000H SA63 1 1 1 0 0 0 X X X 64/32 38FFFFH-380000H 1C7FFFH-1C0000H SA62 1 1 0 1 1 1 X X X 64/32 37FFFFH-370000H 1BFFFFH-1B8000H SA61 1 1 0 1 1 0 X X X 64/32 36FFFFH-360000H 1B7FFFH-1B0000H SA60 1 1 0 1 0 1 X X X 64/32 35FFFFH-350000H 1AFFFFH-1A8000H SA59 1 1 0 1 0 0 X X X 64/32 34FFFFH-340000H 1A7FFFH-1A0000H SA58 1 1 0 0 1 1 X X X 64/32 33FFFFH-330000H 19FFFFH-198000H SA57 1 1 0 0 1 0 X X X 64/32 32FFFFH-320000H 197FFFH-190000H SA56 1 1 0 0 0 1 X X X 64/32 31FFFFH-310000H 18FFFFH-188000H SA55 1 1 0 0 0 0 X X X 64/32 30FFFFH-300000H 187FFFH-180000H SA54 1 0 1 1 1 1 X X X 64/32 2FFFFFH-2F0000H 17FFFFH-178000H SA53 1 0 1 1 1 0 X X X 64/32 2EFFFFH-2E0000H 177FFFH-170000H SA52 1 0 1 1 0 1 X X X 64/32 2DFFFFH-2D0000H 16FFFFH-168000H SA51 1 0 1 1 0 0 X X X 64/32 2CFFFFH-2C0000H 167FFFH-160000H SA50 1 0 1 0 1 1 X X X 64/32 2BFFFFH-2B0000H 15FFFFH-158000H SA49 1 0 1 0 1 0 X X X 64/32 2AFFFFH-2A0000H 157FFFH-150000H SA48 1 0 1 0 0 1 X X X 64/32 29FFFFH-290000H 14FFFFH-148000H SA47 1 0 1 0 0 0 X X X 64/32 28FFFFH-280000H 147FFFH-140000H SA46 1 0 0 1 1 1 X X X 64/32 27FFFFH-270000H 13FFFFH-138000H SA45 1 0 0 1 1 0 X X X 64/32 26FFFFH-260000H 137FFFH-130000H SA44 1 0 0 1 0 1 X X X 64/32 25FFFFH-250000H 12FFFFH-128000H SA43 1 0 0 1 0 0 X X X 64/32 24FFFFH-240000H 127FFFH-120000H SA42 1 0 0 0 1 1 X X X 64/32 23FFFFH-230000H 11FFFFH-118000H SA41 1 0 0 0 1 0 X X X 64/32 22FFFFH-220000H 117FFFH-110000H SA40 1 0 0 0 0 1 X X X 64/32 21FFFFH-210000H 10FFFFH-108000H SA39 1 0 0 0 0 0 X X X 64/32 20FFFFH-200000H 107FFFH-100000H SA38 0 1 1 1 1 1 X X X 64/32 1FFFFFH-1F0000H 0FFFFFH-0F8000H SA37 0 1 1 1 1 0 X X X 64/32 1EFFFFH-1E0000H 0F7FFFH-0F0000H SA36 0 1 1 1 0 1 X X X 64/32 1DFFFFH-1D0000H 0EFFFFH-0E8000H SA35 0 1 1 1 0 0 X X X 64/32 1CFFFFH-1C0000H 0E7FFFH-0E0000H
Sector Address Table Address Range (in hexadecimal)
Bank Address Table
A20 A19 A18 A17 A16 A15 A14 A13 A12
(Kbytes/
Kwords)
(x 8)
Word Mode
(x16)
PRELIMINARY (May, 2002, Version 0.0) 10 AMIC Technology, Inc.
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A29DL323 Series
Sector Size
Byte Mode
Table 4. A29DL323 Bottom Boot Block Sector Address Table (continued)
Bank Sector
Bank 2
Bank 1
SA34 0 1 1 0 1 1 X X X 64/32 1BFFFFH-1B0000H 0DFFFFH- 0D8000H SA33 0 1 1 0 1 0 X X X 64/32 1AFFFFH-1A0000H 0D7FFFH- 0D0000H SA32 0 1 1 0 0 1 X X X 64/32 19FFFFH-190000H 0CFFFFH-0C8000H SA31 0 1 1 0 0 0 X X X 64/32 18FFFFH-180000H 0C7FFFH-0C0000H SA30 0 1 0 1 1 1 X X X 64/32 17FFFFH-170000H 0BFFFFH-0B8000H SA29 0 1 0 1 1 0 X X X 64/32 16FFFFH-160000H 0B7FFFH-0B0000H SA28 0 1 0 1 0 1 X X X 64/32 15FFFFH-150000H 0AFFFFH-0A8000H SA27 0 1 0 1 0 0 X X X 64/32 14FFFFH-140000H 0AFFFFH-0A0000H SA26 0 1 0 0 1 1 X X X 64/32 13FFFFH-130000H 09FFFFH-098000H SA25 0 1 0 0 1 0 X X X 64/32 12FFFFH- 120000H 097FFFH- 090000H SA24 0 1 0 0 0 1 X X X 64/32 11FFFFH-110000H 08FFFFH-088000H SA23 0 1 0 0 0 0 X X X 64/32 10FFFFH-100000H 087FFFH-080000H SA22 0 0 1 1 1 1 X X X 64/32 0FFFFFH-0F0000H 07FFFFH-078000H SA21 0 0 1 1 1 0 X X X 64/32 0EFFFFH-0E0000H 077FFFH-070000H SA20 0 0 1 1 0 1 X X X 64/32 0DFFFFH-0D0000H 06FFFFH-068000H SA19 0 0 1 1 0 0 X X X 64/32 0CFFFFH-0C0000H 067FFFH-060000H SA18 0 0 1 0 1 1 X X X 64/32 0BFFFFH-0B0000H 05FFFFH-058000H SA17 0 0 1 0 1 0 X X X 64/32 0AFFFFH-0A0000H 057FFFH-050000H SA16 0 0 1 0 0 1 X X X 64/32 09FFFFH-090000H 04FFFFH-048000H SA15 0 0 1 0 0 0 X X X 64/32 08FFFFH-080000H 047FFFH-040000H SA14 0 0 0 1 1 1 X X X 64/32 07FFFFH-070000H 03FFFFH-038000H SA13 0 0 0 1 1 0 X X X 64/32 06FFFFH-060000H 037FFFH-030000H SA12 0 0 0 1 0 1 X X X 64/32 05FFFFH-050000H 02FFFFH-028000H SA11 0 0 0 1 0 0 X X X 64/32 04FFFFH-040000H 027FFFH-020000H SA10 0 0 0 0 1 1 X X X 64/32 03FFFFH-030000H 01FFFFH-018000H
SA9 0 0 0 0 1 0 X X X 64/32 02FFFFH-020000H 017FFFH-010000H SA8 0 0 0 0 0 1 X X X 64/32 01FFFFH-010000H 00FFFFH-008000H SA7 0 0 0 0 0 0 1 1 1 64/32 00FFFFH-00E000H 007FFFH-007000H SA6 0 0 0 0 1 1 1 1 0 64/32 00DFFFH-00C000H 006FFFH-006000H SA5 0 0 0 0 0 0 1 0 1 64/32 00BFFFH-00A000H 005FFFH-005000H SA4 0 0 0 0 0 0 1 0 0 64/32 009FFFH-008000H 004FFFH-004000H SA3 0 0 0 0 0 0 0 1 1 64/32 007FFFH-006000H 003FFFH-003000H SA2 0 0 0 0 0 0 0 1 0 64/32 005FFFH-004000H 002FFFH-002000H SA1 0 0 0 0 0 0 0 0 1 64/32 003FFFH-002000H 001FFF-001000H SA0 0 0 0 0 0 0 0 0 0 64/32 001FFFH-000000H 000FFFH-000000H
Sector Address Table Address Range (in hexadecimal)
Bank Address Table
A20 A19 A18 A17 A16 A15 A14 A13 A12
(Kbytes/ Kwords)
(x 8)
Word Mode
(x16)
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A29DL323 Series
Table 5. A29DL323 Top Boot Sector Group Address Table
Sector Group A20 A19 A18 A17 A16 A15 A14 A13 A12 Size Sector
SGA0 0 0 0 0 0 0 X X X 64 KB (1 Sector) FSA0 SGA1 0 0 0 0
SGA2 0 0 0 1 X X X X X 256 KB (4 Sectors) FSA4–FSA7 SGA3 0 0 0 1 X X X X X 256 KB (4 Sectors) FSA8–FSA11 SGA4 0 0 1 1 X X X X X 256 KB (4 Sectors) FSA12–FSA15 SGA5 0 1 0 0 X X X X X 256 KB (4 Sectors) FSA16–FSA19 SGA6 0 1 0 1 X X X X X 256 KB (4 Sectors) FSA20–FSA23 SGA7 0 1 1 0 X X X X X 256 KB (4 Sectors) FSA24–FSA27 SGA8 0 1 1 1 X X X X X 256 KB (4 Sectors) FSA28–FSA31 SGA9 0 1 1 1 X X X X X 256 KB (4 Sectors) FSA32–FSA35 SGA10 1 0 0 1 X X X X X 256 KB (4 Sectors) FSA36–FSA39 SGA11 1 0 1 0 X X X X X 256 KB (4 Sectors) FSA40–FSA43 SGA12 1 0 1 1 X X X X X 256 KB (4 Sectors) FSA44–FSA47 SGA13 1 1 0 0 X X X X X 256 KB (4 Sectors) FSA48–FSA51 SGA14 1 1 0 1 X X X X X 256 KB (4 Sectors) FSA52–FSA55 SGA15 1 1 1 0 X X X X X 256 KB (4 Sectors) FSA56–FSA59 SGA16 1 1 1 1
SGA17 1 1 1 1 1 1 0 0 0 8 KB (1 Sector) FSA63 SGA18 1 1 1 1 1 1 0 0 1 8 KB (1 Sector) FSA64 SGA19 1 1 1 1 1 1 0 1 0 8 KB (1 Sector) FSA65 SGA20 1 1 1 1 1 1 0 1 1 8 KB (1 Sector) FSA66 SGA21 1 1 1 1 1 1 1 0 0 8 KB (1 Sector) FSA67 SGA22 1 1 1 1 1 1 1 0 1 8 KB (1 Sector) FSA68 SGA23 1 1 1 1 1 1 1 1 0 8 KB (1 Sector) FSA69 SGA24 1 1 1 1 1 1 1 1 1 8 KB (1 Sector) FSA70
0 1 1 0 1 1
0 0 0 1 1 0
X X X 192 KB (3 Sectors) FSA1–FSA3
X X X 192 KB (3 Sectors) FSA60–FSA62
Remark X: VIH or VIL
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A29DL323 Series
Table 6. A29DL323 Bottom Boot Sector Group Address Table
Sector Group A20 A19 A18 A17 A16 A15 A14 A13 A12 Size Sector
SGA0 0 0 0 0 0 0 0 0 0 8 KB (1 Sector) FSA0 SGA1 0 0 0 0 0 0 0 0 1 8 KB (1 Sector) FSA1 SGA2 0 0 0 0 0 0 0 1 0 8 KB (1 Sector) FSA2 SGA3 0 0 0 0 0 0 0 1 1 8 KB (1 Sector) FSA3 SGA4 0 0 0 0 0 0 1 0 0 8 KB (1 Sector) FSA4 SGA5 0 0 0 0 0 0 1 0 1 8 KB (1 Sector) FSA5 SGA6 0 0 0 0 0 0 1 1 0 8 KB (1 Sector) FSA6 SGA7 0 0 0 0 0 0 1 1 1 8 KB (1 Sector) FSA7 SGA8 0 0 0 0 0 1 X X X 192 KB (3 Sectors) FSA8–FSA10 1 0 1 1 SGA9 0 0 0 1 X X X X X 256 KB (4 Sectors) FSA11–FSA14 SGA10 0 0 1 0 X X X X X 256 KB (4 Sectors) FSA15–FSA18 SGA11 0 0 1 1 X X X X X 256 KB (4 Sectors) FSA19–FSA22 SGA12 0 1 0 0 X X X X X 256 KB (4 Sectors) FSA23–FSA26 SGA13 0 1 0 1 X X X X X 256 KB (4 Sectors) FSA27–FSA30 SGA14 0 1 1 0 X X X X X 256 KB (4 Sectors) FSA31–FSA34 SGA15 0 1 1 1 X X X X X 256 KB (4 Sectors) FSA35–FSA38 SGA16 1 0 0 0 X X X X X 256 KB (4 Sectors) FSA39–FSA42
SGA17 1 0 0 1 X X X X X 256 KB (4 Sectors) FSA43–FSA46 SGA18 1 0 1 0 X X X X X 256 KB (4 Sectors) FSA47–FSA50 SGA19 1 0 1 1 X X X X X 256 KB (4 Sectors) FSA51–FSA54 SGA20 1 1 0 0 X X X X X 256 KB (4 Sectors) FSA55–FSA58 SGA21 1 1 0 1 X X X X X 256 KB (4 Sectors) FSA59–FSA62 SGA22 1 1 1 0 X X X X X 256 KB (4 Sectors) FSA63–FSA66 SGA23 1 1 1 1
SGA24 1 1 1 1 1 1 X X X 64 KB (1 Sector) FSA70
0 0 0 1 1 0
X X X 192 KB (3 Sector) FSA67–FSA69
Remark X: VIH or VIL
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Device
A29DL323 Series
Table 7. A29DL323 Product ID Code (Manufacture Code / Device Code)
Input Output Product ID Code
A12
A6 A1 A0 A-1
to
A20
Manufacturer Code
Top
BYTE
Boot
mode
Code
Bottom Boot
Top
WOR
Boot
D mode
Bottom Boot
Sector Group Protection
Notes: 1. A-1 is valid only in the BYTE mode. I/O8 to I/O14 go into a high-impedance state in the BYTE mode, and I/O15 is A-1 of
the lowest address.
X VIL VIL VIL VIL 0 0 0 0 0 0 0 0 0 0 0 1 0 0 0 0 10H X VIL VIL VIL VIL
X VIL VIL VIH X
Sector Group
Address
VIL VIH VIL VIL 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 01H
2. If 01H is output, the sector group is protected. If 00H is output, the sector group is unprotected. Remark X: VIH or VIL
I/O15 I/O14 I/O13 I/O12 I/O11 I/O10 I/O9 I/O8 I/O7 I/O6 I/O5 I/O4 I/O3 I/O2 I/O1 I/O0 HEX
Note
1
Hi-Z Hi-Z Hi-Z Hi-Z Hi-Z Hi-Z Hi-Z Hi-Z 0 1 0 1 0 0 0 0 50H
Hi-Z Hi-Z Hi-Z Hi-Z Hi-Z Hi-Z Hi-Z Hi-Z 0 1 0 1 0 0 1 1 53H
0 0 1 0 0 0 1 0 0 1 0 1 0 0 0 0 2250H
0 0 1 0 0 0 1 0 0 1 0 1 0 0 1 1 2253H
Note2
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A29L323 Series
Sector Group Protection
This command performs sector group protection. By applying VID to the device enters the sector group protection mode.
Sector group protection is started by inputting the sector group address of the sector group to be protected to A12 to A20, inputting (A6, A1, A0) = (VIL, VIH, VIL), and writing 60H. After a timeout of 250µs, sector group protection is completed. Next, with the sector group address input to A12 to A20, the device enters the sector group protection verify mode by inputting (A6, A1, A0) = (VIL, VIH, VIL), and writing 40H. When read is performed in this state, the sector group protection verify result is output to I/O0. If "1" is output to I/O0, the verified sector group is protected. If "1" was not output to I/O0, sector group protection failed, so perform sector group protection again. For the timing waveform and flow chart, refer to Timing Waveform for Sector Group Protection and Figure 1.
RESET
and writing 60H to any address,
Sector Group Unprotect
This command performs sector group unprotect. Sector group unprotect is performed for all sector group. Unprotect cannot be performed for specific sector group. Moreover, all sector groups must be protected priors to unprotect. The device enters the sector group unprotect mode by
applying VID to If unprotected sector group exist, first perform sector group
protection for these sector groups. To protect a sector group, input the sector group address of the sector group to be protected to the sector group address input pin, input (A6, A1, A0) = (VIL, VIH, VIL), and write 60H (refer to Sector Group Protection). Sector group unprotect is started by inputting (A6, A1, A0) = (VIH, VIH, VIL), and writing 60H to any address. Following a timeout of 15 ms, sector group unprotect is completed. Unprotect verification must be performed for each sector group. The device enters the sector group unprotect verification mode by inputting the sector group address to input pin of sector group address and writing 40H, with input (A6, A1, A0) = (VIH, VIH, VIL). If reading is performed in this state, the sector group unprotect verification result is output to I/O0. If the verified sector group is unprotected, "0" is output to I/O0. If "0" is not output to I/O0, this means that unprotect failed, so perform sector group unprotect again. For the flow chart, refer to Figure 2. Sector Group Unprotect Flow Chart.
RESET
and writing 60H to any address.
Query
The dual operation flash memory conforms to CFI (Common Flash memory Interface). CFI enables information about a device such as the device specifications, memory density, and supply voltage to be read. Therefore, the software of the host system can support the software algorithm of a specific vendor used by a device by using the CFI. For details, refer to the CFI specifications. By writing the Query command (98H) and giving an address, the device information corresponding to that address can be read. If the device information is read in the WORD mode (16 bits), the upper bytes of data (I/O15 to I/O8) are "0". To end the Query mode, writes the read / reset command.
Extra One Time Protect Sector Entry
The dual operation flash memory has a sector area that has One Time Protect function. This area does not allow code that has been written to the area to be changed. This area can be programmed or erased until it is protected. Once it has been protected, however, protection can never be canceled. Therefore, care must be exercised when using this area. The Extra One Time Protect Sector area has a density of 64 Kbytes and exits at the same addresses as the 8 Kbytes sector. These addresses are 3F0000H to 3FFFFFH for top boot in the BYTE mode (1F8000H to 1FFFFFH in the WORD mode), and 000000H to 00FFFFH for bottom boot in the BYTE mode (000000H to 007FFFH in the WORD mode). Because boot block areas (8 Kbytes x 8 sectors) usually appear in the areas of these addresses, the Extra One Time Protect Sector entry command sequence must be written to enter them as the Extra One Time Protect Sector area. The status in which the Extra One Time Protect Sector area appears is the Extra One Time Protect Sector mode. In the Extra One Time Protect Sector mode, the other sectors, except the boot block area, can be read. In addition, the Extra One Time Protect Sector area can be read, programmed, or erased in this mode. To exit from the Extra One Time Protect Sector mode, the Extra One Time Protect Sector Reset command sequence must be written.
Extra One Time Protect Sector Program
To program data to the Extra One Time Protect Sector area, write the Extra One Time Protect Sector Program command sequence in the Extra One Time Protect Sector mode. This command is no different from the conventional program command except that it must be written in the Extra One Time Protect Sector mode. Therefore, completion of execution of this command is detected in the same manner as the conventional detection method of using I/O7 data
polling, I/O6 toggle bit, and RY/BY. Care must be exercised in selecting a program destination address. If a program destination address other than the one in the Extra One Time Protect Sector area is selected, the data of that address is changed.
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A29DL323 Series
WE
WE
WE
Extra One Time Protect Sector Erase
To erase the Extra One Time Protect Sector area, write the Extra One Time Protect Sector erase command sequence in the Extra One Time Protect Sector mode. This command is the same as the conventional sector erase command except that it must be written in the Extra One Time Protect Sector mode. Therefore, completion of execution of this command is detected in the same manner as the conventional detection method of using I/O7 data polling, I/O6 toggle bit, and
RY/BY. Care must be exercised in selecting a sector address to erase. If a sector address other than the one in the Extra One Time Protect Sector area is selected, the data of that sector is changed.
Extra One Time Protect Sector Protection
The following write operations are used to protect the Extra One Time Protect area during the Extra One Time Protect Sector mode. Write the sector group protection setup command (60H) in the Extra One Time Protect Sector mode. . Set (A6, A1, A0) = (VIL, VIH, VIL), and set the sector address that selects the Extra One Time Protect Sector. . Write the sector group protection command (60H). Because the sequence is the same as the conventional command sequence to protect a sector group except that the Extra One Time Protect Sector mode must be set and that
VID is not input to the sequence can be used.
For details of how to protect a sector group, refer to Sector Group Protection. If an address other than the one of the Extra One Time Protect Sector area is specified as a sector address, the other sectors are affected. Once the sector has been protected, protection can never be canceled. Exercise utmost care when protecting a sector.
RESET
, the same command
Hardware Data Protection
This device requires two unlock cycles for program / erase command sequence to prevent illegal program / erase. Moreover, a hardware data protect function is provided as follows.
Low VCC Write Inhibit
To prevent an illegal write cycle during VCC transition, the command register and program / erase circuit is disabled and all write cycles are ignored while VCC is VLKO or lower. Write commands are ignored until VCC becomes equal to or greater than VLKO.
Logical Inhibit
The write cycle is inhibited under any of the following conditions : OE = VIL, CE = VIH, or
write cycle, CE = VIL and WE = VIL must be set while /OE = VIH.
= VIH. To start a
Power-Up Write Inhibit
Even if power-up, no commands are accepted at the rising edge of
. The device is automatically reset to the read mode at
power ON.
= CE = VIL and OE = VIH are satisfied at
Write Pulse "Glitch" Protection
Because OE, CE, and /WE reject a noise pulse of 5 ns (typical) or less as an invalid pulse, a write operation is not
started.
Sector Group Protection
The dual operation flash memory can be protected by the user in sector group units. For details, refer to Sector Group Protection.
PRELIMINARY (May, 2002, Version 0.0) 16 AMIC Technology, Inc.
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A29L323 Series
START
Temporary Sector Group
Unprotect Mode
Increment Pulse Count
RESET=V
Wait 4 us
No
Protect Sector Group?
Sector Group
Protection (Unprotect) Mode
Address=Don't care
Data=60H
Pulse Count=1
Sector Group Protection
(A6, A1, A0)=(VIL, VIH, VIL),
Address=SGA, Data=60H
Timeout 250us
Verify Sector Group Protection
(A6, A1, A0)=(VIL, VIH, VIL),
Address=SGA, Data=40H
ID
Yes
Read from Sector Group Address
(A6, A1, A0)=(VIL, VIH, VIL),
Address=SGA
No
Data=01H?
Yes
Remove VID from RESET,
Write Reset Command
Fail
No
Sector Group Protect Complete
Data=01H?
Yes
Protect Other
Sector Group?
No
Remove VID from RESET,
Write Reset Command
Yes
Next Sector Group Address
Figure 1. Sector Group Protection Flow Chart
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A29L323 Series
START
Sector Group Protection
RESET=V
Wait 4 us
Sector Group Protection
Address=Don't Care, Data=60H
Yes
All Sector Group Protected?
n=0
Verify Sector Group Protection
(A6, A1, A0)=(VIL, VIH, VIL)
A12 to A20=SGA, Data=40H
Read from Sector Group Address
(A6, A1, A0)=(VIL, VIH, VIL),
A12 to A20=SGA
No
Data=0H?
Last Sector Group (n=25)?
n=0, Pluse Count=1
No
Yes
Yes
ID
Next Sector Group Address
No
(n=n+1)
Increment Pulse
No
Pulse Count=1000?
Yes
Remove VID from RESET,
Write Reset Command
Fail
Sector Group Unprotect
(A6, A1, A0)=(VIH, VIH, VIL),
Data=60H
Timeout 15ms
Verify Sector Group Protection
(A6, A1, A0)=(VIH, VIH, VIL),
Address=SGA, Data=40H
Read from Sector Group Address
(A6, A1, A0)=(VIH, VIH, VIL),
A12 to A20=SGA
No
Data=00H?
Yes
Last Sector Group (n=25)?
Yes
Remove VID from RESET,
Write Reset Command
Sector Group Protect Complete
Yes
Figure 2. Sector Group Unprotect Flow Chart
Next Sector Group Address
(n=n+1)
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A29L323 Series
CFI Code List
Address A6 to A0 Data I/O15 to I/O0 Description
10H 11H 12H 13H 14H 15H 16H 17H 18H
19H 1AH 1BH 0027H Minimum VCC voltage (program / erase)
1CH 0036H Maximum VCC voltage (program / erase)
1DH 0000H Minimum VPP voltage 1EH 0000H Maximum VPP voltage
1FH 0004H Typical word program time (2N µs)
20H 0000H Typical buffer program time (2N µs)
21H 000AH Typical sector erase time (2N ms)
22H 0000H Typical chip erase time (2N ms)
23H 0005H Maximum word program time (typical time × 2N)
24H 0000H Maximum buffer program time (typical time × 2N)
25H 0004H Maximum sector erasing time (typical time × 2N)
26H 0000H Maximum chip erasing time (typical time × 2N)
27H 0016H Capacity (2N Bytes)
28H
29H 2AH 2BH 2CH 0002H Type of erase block 2DH 2EH
2FH
30H
31H
32H
33H
34H
40H
41H
42H
0051H 0052H 0059H 0002H 0000H 0040H 0000H 0000H 0000H 0000H 0000H
0002H 0000H 0000H 0000H
0007H 0000H 0020H 0000H 003EH 0000H 0000H 0001H 0050H 0052H 0049H
"QRY" (ASCII code)
Main command set 2 : AMD/FJ standard type Start address of PRIMARY table
Auxiliary command set 00H : Not supported Start address of auxiliary algorithm table
I/O7 to I/O4 : 1 V/bit I/O3 to I/O0 : 100 mV/bit
I/O7 to I/O4 : 1 V/bit I/O3 to I/O0 : 100 mV/bit
I/O information 2 : ×8/×16-bit organization Maximum number of bytes when two banks are programmed (2N)
Information about erase block 1 Bit0 to 15 : y = number of sectors Bit16 to 31 : z = size (Z × 256 Bytes) Information about erase block 2 bit0 to 15 : y = number of sectors bit16 to 31 : z = size (z × 256 Bytes) "PRI" (ASCII code)
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A29DL323 Series
CFI Code List (continued)
Address A6 to A0 Data I/O15 to I/O0 Description
43H 0031H Main version (ASCII code)
44H 0032H Minor version (ASCII code)
45H 0000H Address during command input
00H : Necessary 01H : Unnecessary
46H 0002H Temporary erase suspend function
00H : Not supported 01H : Read only 02H : Read / Program
47H 0001H Sector group protection
00H : Not supported 01H : Supported
48H 0001H Temporary sector group protection
00H : Not supported 01H : Supported
49H 0004H Sector group protection algorithm 4AH 00XXH Number of sectors of bank 2
00H : Not supported 30H : A29DL323
4BH 0000H Burst mode
00H : Not supported
4CH 0000H Page mode
00H : Not supported
4DH 0085H Minimum VACC voltage
7 to I/O4 : 1 V/bit
I/O
3 to I/O0 : 100 mV/bit
I/O
4EH 0095H Maximum VACC voltage
7 to I/O4 : 1 V/bit
I/O
3 to I/O0 : 100 mV/bit
I/O
4FH 00XXH Boot organization
02H : Bottom boot (A29DL323UX-XX) 03H : Top boot (A29DL323TX-XX)
50H 0001H Temporary program suspend function
00H : Not supported 01H : Supported
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A29DL323 Series
WE
Command Definitions Writing Commands
All operations are executed by writing a command. To write a command, the write cycle of a standard microprocessor is used. The operation of the device is controlled by writing a command to a register. The command register is a function that latches the address and data necessary for executing an instruction and does not occupy the memory area. If an illegal address or data is written or if an address or data is written in the wrong sequence, the device is reset to the read mode. Table 8. shows the commands and command sequences.
Read / Reset Command
This command resets the device to the read mode. The read mode is maintained until the contents of the command register are changed. Once the device is in the read mode, no command is necessary for reading data. Data read can be performed using the read cycle of a standard microprocessor. The read mode is maintained until the contents of the command register are changed.
Product ID
The manufacturer code and device code can be read without inputting a high voltage to the address pin. If a bank address is specified in the third bus cycle and a read operation is started from address xx00H in the fourth bus cycle, manufacturer code 10H is output. If address xx02H (BYTE mode) or xx01H (WORD mode) is read, the device code is output. If a read operation is executed from an address in the bank not specified in the third bus cycle, data of the memory cell is output. If a read operation is executed starting from address (BA) 02H (WORD mode) or (BA) 04H (BYTE mode), information indicating which sector group is protected can be obtained. If the sector group address is scanned with (A6, A1, A0) = (VIL, VIH, VIL), "1" is output to I/O0 to indicate that the sector group is protected (for details refer to Sector Group Protection). The product ID can be read only from the specified bank. To read the manufacturer code, device code, and information on protection of sector group from a bank not specified, write the read / reset command, specify the bank address to be read, and then write the product ID command again. To end the product ID mode, writes the read / reset command. To write the product ID command in the product ID mode, execute the read / reset command once.
Program Command Sequence
This command is used to program data. Program is performed in 1 byte or 1 word units. Program can be performed regardless of the address sequence, even if the sector limit is exceeded. However, "0" cannot be changed back into "1" through the program operation. If overwriting "1" to "0" is attempted, the program operation is interrupted and "1" is output to I/O5, or successful program is indicated in data polling, but actually the data is "0" as before.
Following write by command sequence, the pulse required for program is automatically generated inside the device and program verification is automatically performed, so that control from external is not required. During automatic program, any command other than the program suspend is ignored. However, automatic program is interrupted when hardware reset is performed. Since the programmed data is not guaranteed in this case, reexecute the program command following completion of reset. Upon completion of automatic program, the device returns to the read mode. The operation status of automatic program can be determined
by using the hardware sequence flags (I/O7, I/O6, RY/BY pins). See sections “I/O7 (Data Polling)”, “I/O6 (Toggle Bit)”, and
“RY/BY (Ready /
Busy
)”. For the timing waveform and flow chart, refer to Timing Waveform for Write Cycle (
Controlled), Timing
Waveform for Write Cycle (CE Controlled) and Figure 3.
START
Write Program
Command Sequence
Data Poll
from System
Yes
No
Increment Address
Last Address ?
Yes
Programming
Completed
Figure 3. Program Flow Chart
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A29DL323 Series
WE
Program Suspend / Resume Commands
This command is used to suspend automatic programming. Addresses not being programmed to while programming is suspended can be read. Sector erase (including the timeout period) and data program operations can be both suspended. Chip erase operations cannot be suspended. 1µs is required between when the command sequence is programmed and when the automatic program operation is suspended. The execution status of an automatic program operation can be determined using a hardware sequence flag (I/O7, I/O6 pins.) refer to I/O7 (Data polling) and I/O6 (Toggle Bit). To resume an automatic program operation, write the resume command (30H) while the operation is suspended.
Caution about Program Suspend / Resume Commands If automatic program resume and suspend are repeated at
intervals of less than 5µs, the program operation may not be correctly completed.
Chip Erase Command Sequence
This command is used to erase the entire chip. Following command sequence write, erase is performed after "0" is written to all memory cells and verification is performed, using the automatic erase function. Program before erase and control from external are not required. During automatic erase, all commands that have been written are ignored. However, automatic erase is interrupted by hardware reset. Since erase is not guaranteed in this case, execute the chip erase command again after reset is completed. Upon completion of automatic erase, the device returns to read mode. The automatic erase operation status can be determined with the hardware sequence flags (I/O7, I/O6, RY/BY pins). See sections “I/O7 (Data Polling)”, “I/O6 (Toggle Bit)”,
and “RY/BY (Ready /
Busy
)”.
For the timing waveform and flow chart, refer to Timing Waveform for Sector / Chip Erase and Figure 4.
Sector Erase Command Sequence
This command is used to erase data in sector units. "0" is written to the entire sector whose data is to be erased by the automatic erase function after the command sequence has been written, and erase is executed after verification has been performed. Programming before erase and external control are not necessary. The timeout period of sector erase starts when erase command 30H and the address of the sector to be erased are written at the sixth bus cycle. When this timeout period (50µs) has elapsed, the device automatically starts erasing. Two or more sectors can be selected and erased at the same time by additionally writing erase command 30H and the address of the sector whose data is to be erased during the
timeout period. In this case, the timeout period starts again after the last erase command has been written. If a protected sector and a sector that is not protected are included in the selected sectors, only the sector that is not protected is erased and the protected sector is ignored. If a command other than the sector erase or erase suspend command is input during the timeout period, the device is reset to the read mode. If the timeout period has elapsed and erase has started, any command other than the erase suspend command is ignored. However, erase is stopped if hardware reset is executed. In this case, sector erase is not guaranteed. Execute the sector erase command again after completion of reset. When automatic erasure has been completed, the device returns to the read mode. Completion of automatic sector erase can be reported to the host system by using the data polling function of I/O7, toggle
bit function of I/O6, and RY/BY pin. Sector erase is started after the lapse of the timeout period that is started from the
rising of the sector erase command and is completed when the data of I/O7
is set to "1" (refer to Hardware Sequence Flags). The device returns to the read mode. Data polling and toggle bit function in any address of the sector that is to be erased. The time required to erase two or more sectors is "(sector programming time + sector erase time) x number of sectors". If two or more sectors of different banks are erased, a read operation from a bank (i.e., dual operation) cannot be executed. For the timing waveform and flow chart, refer to Timing Waveform for Sector / Chip Erase and Figure 4.
Figure 4. Sector / Chip Erase Flow Chart
or CE pulse, whichever earlier, of the last
START
Write Erase
Command Sequence
Data Poll
from System
Data = FFh ?
No
Yes
Erasure Completed
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Sector Erase Suspend / Resume Commands
This command suspends automatic erase. During erase suspend, sectors for which erase is not performed can be read and programmed. Sector erase (including the timeout period) and data program operations can be both be suspended. Chip erase operations cannot be suspended. Suspend can be performed for all sectors for which erase is being performed. Following command sequence write, 20µs are required until automatic erase is suspended. While automatic erase is suspended, any sector for which erase is not being performed can be read and programmed. Whether automatic erase is suspended can be determined with the hardware sequence flags (I/O7, I/O6, I/O2 pins). See sections “I/O7 (Data Polling)”, “I/O6 (Toggle Bit)”, and “I/O2 (Toggle Bit II)". If resume automatic erase that has been suspended, write the resume command (30H) while sector erase is suspended. At this time, input a bank address of the sector for which erasure is suspended.
Caution Sector Erase Suspend / Resume Commands
If automatic erase resume and suspend are repeated at intervals of less than 100µs, the erasure operation may not be correctly completed.
Unlock Bypass Command Sequence
This device provides an unlock bypass mode to shorten the program time. Normally, 4 write cycle included with 2 unlock cycles are required during program. In contrast, with the unlock bypass mode, it is possible to perform program without unlock cycles. In the unlock bypass mode, all commands except unlock bypass program and unlock bypass reset are ignored. To end the unlock bypass mode, the unlock bypass reset command must be written. Note, however, that the unlock bypass reset command must be written to an address of the bank that is not being read in dual operation. If the unlock bypass reset command is written, the device returns to the normal read mode. In the unlock bypass mode, the operating current is necessary
even if CE = VIH. For the flowchart, refer to Figure 5.
Unlock Bypass Set
This command sets the device to the unlock bypass mode.
Unlock Bypass Program
This command is used to perform program in the unlock bypass mode.
Unlock Bypass Reset
This command is used to quit the unlock bypass mode. When this command is executed, the device returns to the read mode.
START
Address=555H
Data=AAH
Address=2AAH
Data=55H
Address=555H
Data=20H
Address=Don't Care
Data=A0H
Address=Program Address
Data=Program Data
Data Polling
No
Next Address
Note: This flow chart shows the WORD mode's case. In the BYTE mode, address to be input is different from the WORD mode. See Table 8. Command Sequence
Figure 5. Unlock Bypass Flow Chart (WORD Mode)
Last Address ?
Yes
Programming Completed
Address=BA
Data=90H
Address=Don't Care
Data=00H
End
Unlock Bypass Set
Unlock Bypass Program
Unlock Bypass Reset
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Table 8. A29DL323 Command Sequence
Command Sequence Bus
1st Bus Cycle 2nd Bus Cycle 3rd Bus Cycle 4th Bus Cycle 5th Bus Cycle 6th Bus Cycle
Cycle
Address Data Address Data Address Data Address Data Address Data Address Data Read / Reset
Note 1
1 XXXH F0H RA RD - - - - - - - -
Note 1
BYTE mode 3 AAAH AAH 555H 55H AAAH F0H RA RD - - - - Read / Reset WORD mode 555H 2AAH 555H BYTE mode 4 AAAH AAH 555H 55H AAAH A0H PA PD - - - - Program
WORD mode 555H 2AAH 555H Program Suspend Program Suspend
Note2
1 BA B0H - - - - - - - - - -
Note3
1 BA 30H - - - - - - - - - ­BYTE mode 6 AAAH AAH 555H 55H AAAH 80H AAAH AAH 555H 55H AAAH 10H Chip Erase WORD mode 555H 2AAH 555H 555H 2AAH 555H BYTE mode 6 AAAH AAH 555H 55H AAAH 80H AAAH AAH 555H 55H FSA 30H Sector Erase WORD mode 555H 2AAH 555H 555H 2AAH
Sector Erase Suspend Sector Erase Suspend Resume
Note5
Note4
1 BA B0H - - - - - - - - - -
1 BA 30H - - - - - - - - - -
BYTE mode 3 AAAH AAH 555H 55H AAAH 20H - - - - - - Unlock Bypass
Set Unlock Bypass Program
Unlock Bypass Reset
WORD mode 555H 2AAH 555H
Note6
2 XXXH A0H PA PD - - - - - - - -
Note7
2 BA 90H XXXH 00H
BYTE mode 3 AAAH AAH 555H 55H (BA)
Note11
- - - - - - - ­90H IA ID - - - - Product ID
AAAH
WORD mode 555H 2AAH (BA)
555H Sector Group Protection Sector Group Unprotect
Note9
Note7
4 XXXH 60H SPA 60H SPA 40H SPA SD - - - -
Note8
4 XXXH 60H SUA 60H SUA 40H SUA SD - - - ­BYTE mode 1 AAH 98H - - - - - - - - - - Query WORD mode 55H BYTE mode 3 AAAH AAH 555H 55H AAAH 88H - - - - - - Extra One Time
Protect Sector Entry
WORD mode 555H 2AAH 555H BYTE mode 4 AAAH AAH 555H 55H AAAH A0H PA PD - - - - Extra One Time
Protect Sector Program
Note10
WORD mode 555H 2AAH 555H BYTE mode 6 AAAH AAH 555H 55H AAAH 80H AAAH AAH 555H 55H EOTPSA 30H Extra One Time
Protect Sector
Note10
Erase
WORD mode 555H 2AAH 555H 555H 2AAH BYTE mode 4 AAAH AAH 555H 55H AAAH 90H XXXH 00H - - - - Extra One Time
Protect Sector
Note10
Reset Extra One Time Protect Sector
Protection
WORD mode 555H 2AAH 555H
Note10
4 XXXH 60H EOTPSA 60H EOTPSA 40H EOTPSA SD - - - -
Note:
1. Both these read / reset commands reset the device to the read mode.
2. Programming is suspended if B0H is input to the bank address being programmed to in a program operation.
3. Programming is resumed if 30H is input to the bank address being suspended to in a program-suspend operation.
4. Erasure is suspended if B0H is input to the bank address being erased in a sector erase operation.
5. Erasure is resumed if 30H is input to the bank address being suspended in a sector-erase-suspend operation.
6. Valid only in the unlock bypass mode.
7. Valid only when
RESET
= VID (except in the Extra One Time Protect Sector mode).
8. The command sequence that protects a sector group is excluded.
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A29DL323 Series
9. Only A0 to A6 are valid as an address.
10. Valid only in the Extra One Time Protect Sector mode.
11. This command can be used even if this data is F0H.
Remarks:
1. Specify address 555H or 2AAH (A10 to A0) in the WORD mode, and AAAH or 555H (A10 to A0, A-1) in the BYTE mode.
2. RA : Read address RD : Read data IA : Address input
xx00H (to read the manufacturer code) xx02H (to read the device code in the BYTE mode) xx01H (to read the device code in the WORD mode) ID : Code output. Refer to the Product ID code (Manufacturer code / Device code). PA : Program address PD : Program data FSA: Erase sector address. The sector to be erased is selected by the combination of this address. Refer to the Sector Organization / Sector Address Table. BA : Bank address. Refer to the Sector Organization / Sector Address Table. SPA : Sector group address to be protected. Set sector group address (SGA) and (A6, A1, A0) = (VIL, VIH, VIL). SUA : Unprotect sector group address. Set sector group address (SGA) and (A6, A1, A0) = (VIH, VIH, VIL). EOTPSA : Extra One Time Protect Sector area addresses. These addresses are 3F0000H to 3FFFFFH (BYTE mode) /
1F8000H to 1FFFFFH (WORD mode) for top boot, and 000000H to 00FFFFH (BYTE mode) / 000000H to 007FFFH (WORD mode) for bottom boot.
SD : Data for verifying whether sector groups read from the address specified by SPA, SUA, and EOTPSA are protected or
unprotected.
3. The sector group address is don't care except when a program / erase address or read address are selected.
4. × of address bit indicates VIH or VIL.
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Hardware Sequence Flags
The status of automatic program / erase operations can be determined from the status of the I/O2, I/O3, I/O5, I/O6,
I/O7, and RY /BY pins.
Caution When Reading Flags
When checking the completion or suspension status of an automatic program / erase operation by reading different sector data within the same bank, be sure to either clock
the CE or change the address before reading the data. If the CE is fixed to VIL or data is read from the same
address without the address being changed, the output data may not be output correctly.
I/O7 : Data Polling
Data polling is a function to determine the status of automatic program / erase is currently being performed by using I/O7.
Data polling is valid from the rise of the last
in the program / erase command sequence. The status of automatic program is currently being executed can be determined by reading from the program destination addresses. While automatic programming is being executed or while automatic programming is being executed during erasure suspension, the complement of the final data programmed will be output to I/O7. Upon completion of automatic program, the true value of the programmed data, not the complement, is output. The status of automatic erase is in progress can be determined by reading from the addresses of the sector being erased. If erase is in progress, "0" is output to I/O7. If the automatic erase operation is complete or if it is suspend, "1" will be output to I/O7 when a sector for which erasure is suspended is read. During automatic erase, if all the selected sectors are protected, data polling is valid for approximately 400µs. The device is then reset to the read mode. If the selected sectors include protected and unprotected sectors, only unprotected sectors are erased, and protected sectors are ignored. Upon completion of automatic program / erase, after the data output to I/O7 changes from the complement to the true value, I/O7 changes asynchronously like I/O0 to I/O6
while OE is maintained at low level. For the timing waveform and flow chart, refer to Timing
Waveform for Data Polling and Figure 6.
I/O6 : Toggle Bit
The toggle bit is a function that uses I/O6 to determine the status of automatic program / erase is in progress.
The toggle bit is valid from the rise of the last WE in the program / erase command sequence. If a continuous read is performed from any address of a bank that is undergoing automatic program or erase, I/O6 will be toggled. If a sector other than the erased sector is
read after automatic program / erase is complete or when it is suspended, the I/O6 toggle operation is stopped, and valid data for the read is output. If a sector for which erasure is suspended is read, “1” will be output to I/O6. Continuous
read control is performed with the OE or CE. If program is performed for an address inside a protected sector, I/O6 is toggled approximately 1µs, and then the
device is reset to the read mode. Moreover, if all the sectors selected at the time of automatic erase are protected, I/O6 is toggled approximately 400µs, and then the device is reset to the read mode. In this way, by using I/O6, it is possible to determine the status of automatic erase is in progress (or suspended), but to determine which sector is being erased, I/O2 (Toggle Bit
II) is used. See section “I/O2 (Toggle Bit II)”. For the timing waveform and flow chart, refer to Timing Waveform for Toggle Bit, Timing Waveform for I/O2 vs. I/O6 and Figure 7.
START
Read (I/O0 to I/O7)
An=Valid Address
Yes
Yes
PASS
No
I/O7=Data?
No
I/O5=1?
Yes
Read (I/O0 to I/O7)
An=Valid Address
I/O7=Data?
No
FAIL
Figure 6. Data Polling Flow Chart
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BY
I/O2: Toggle Bit II
Toggle bit II is a function that determines the status of automatic erase (or erase suspend) is in progress for a particular sector by using I/O2. I/O2 is toggled when continuous read is performed from addresses in a sector during automatic erase (or erase
suspend). Either OE or CE is used to control continuous read.
When program to a sector that is not subject to erase suspend is attempted during erase suspend, read from sectors that are not subject to erase suspend cannot be performed until program is completed. In this case, "1" will be output to I/O2 if a continuous read is performed from an address in a sector other than an erased sector. In this way, it is possible to determine the status of automatic erase (including erase suspend) is in progress for sectors specified using I/O2, but whether the state is erase in progress or erase suspend cannot be determined with I/O2. To determine this, I/O6 (Toggle Bit) must be used. See section “I/O6 (Toggle Bit)”. For the timing waveform, refer to Timing Waveform for I/O2 vs. I/O6.
I/O5 : Exceeding Timing Limits
If the program / erase time exceeds the prescribed number of pulses during automatic program / erase (exceeding timing limit), "1" is output to I/O5 and automatic program / erase failure is indicated. Moreover, if overwriting "0" to "1" is attempted, the device judges data overwrite to be impossible, and "1" is output to I/O5 when the timing limit is exceeded. When this happens, execute command reset.
I/O3 : Sector Erase Timer
A 50µs timeout period occurs following write with the sector erase command sequence before automatic erase starts. During this timeout period, "0" is output to I/O3. When automatic erase starts upon completion of the timeout period, "1" is output to I/O3. If sector erase is performed, first confirm whether the device has received a command by using I/O7 (Data Polling) or I/O6 (Toggle Bit). Then, using I/O3, check whether automatic erase has started. If I/O3 is "0", the timeout period is not over, and so it is possible to add sectors to erase. If I/O3 is "1", automatic erase starts and other commands (except erase suspend) are ignored until erase is completed. If a sector to erase is added during the sector erase timeout period, it is recommended to check I/O3 prior to and following the addition. If I/O3 is "1" following the addition, that addition may not be accepted.
RY
: Read/
Busy
The RY/BY is a dedicated output pin used to check the status of automatic program / erase is in progress. During automatic program / erase, "0" is output to the RY
/BY. If "1" is output, this signifies that the device is either in the read mode (including erase suspend) or standby mode.
Since the RY/BY is an open-drain output pin, it is possible to connect several RY/BY in series by connecting a pull-up
resistor to VCC. For the timing waveform, refer to Timing Waveform for
RY/BY (Ready /
Busy
).
START
An=Any Address in the Bank Being Executed
No
An=Any Address in the Bank Being Executed
Read (I/O0 to I/O7)
I/O7=Toggle?
Yes
I/O5=1?
Yes
Read (I/O0 to I/O7)
I/O7=Toggle?
No
FAIL
Figure 7. Toggle Bit Flow Chart
No
No
PASS
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Table 9. Hardware Sequence Flags
Status
I/O7 I/O6 I/O5 I/O3 I/O2
(Note 1) (Note 2) (Note 3) (Note 1)
Progress
Program
7I/O
Toggle 0 0 1 0
Erase 0 Toggle 0 1 Toggle 0
Program Sector Other than Program
Sector Erase Suspend
Sector Other than Erase
Suspend Sector Erase Suspend
Program
Erase Suspend Program
Data Data Data Data Data Data Data Data Data Data Data 1
1 1 0 0 Toggle 1
Data Data Data Data Data 1
Toggle 0 0 1 0
7I/O
0 Toggle 1 0 1 0 0 Toggle 1 1 N/A 0
Toggle 1 0 N/A 0
7I/O
Exceeding time limits
Program Suspend
Erase Suspend
Program Erase
Erase Suspend
Notes:
1. To read I/O7 or I/O2, a valid address must be input.
2. To read I/O6, any address can be used.
3. For I/O5, “1” is output if the automatic program / erase time exceeds the prescribed number of internal pulses.
RY/BY
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WP
WP
Electrical Characteristics
Before turning on power, input GND ± 0.2 V to the
RESET
pin until VCC  VCC (MIN.).
DC Characteristics (Recommended Operating Conditions Unless Otherwise Noted)
Parameter Symbol Test Description Min. Typ. Max. Unit
High level input voltage Low level input voltage VIL -0.3 +0.5 V
High level output voltage Low level output voltage Input leakage current Output leakage current
Power Supply Current
RESET
Accelerated programming voltage VACC High Voltage is applied 8.5 9.5 V Low VCC lock-out voltage (Note) VLKO
Read
WORD mode
Program, Erase Standby
Standby / Reset Automatic sleep mode
Read during programming Read during erasing Programming during
suspend Accelerated programming
high level input voltage
VIH
VOH IOH = -500 µA, VCC = VCC (min.) VOL IOL = +1.0 mA, VCC = VCC (min.)
ILI
ILO
ICC1 VCC = VCC (max.),
= VIL, OE= VIH
CE
ICC2
VCC = VCC (max.), CE = VIL, OE = VIH
ICC3
VCC = VCC (max.), CE =
(ACC) = VCC ± 0.3 V, OE = VIL
ICC4
VCC = VCC (max.), ICC5 VIH = VCC ± 0.2 V, VIL = GND ± 0.2 V ICC6 VIH = VCC ± 0.2 V, VIL = GND ± 0.2 V ICC7 VIH = VCC ± 0.2 V, VIL = GND ± 0.2 V ICC8
IACC
VID High Voltage is applied
= VIL, OE = VIH,
CE
Automatic programming during suspend
(ACC) pin
VCC
VIH = VCC ± 0.3V; VIL = VSS ± 0.3V
tCYCLE = 5 MHz 10 16 BYTE mode tCYCLE = 1 MHz tCYCLE = 5 MHz tCYCLE = 1 MHz
RESET
RESET
= GND ± 0.2 V
=
2.4
2.4
-1.0
-1.0
11.5
1.7 V
VCC+0.3 V
2
10
2
15
0.2
0.2
0.2 21 21 17
5
15
0.4 +1.0 +1.0
4
16
4
30 mA
5 µA
5 µA
5 µA 45 mA 45 mA 35 mA
10 30
12.5 V
mA
mA
V
V µA µA
Notes:
1. When VCC is equal to or lower than VLKO, the device ignores all write cycles. Remark: These DC characteristics are in common regardless of product classification.
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BYTE
BYTE
AC Characteristics (Recommended Operating Conditions Unless Otherwise Noted)
AC Test Conditions
Input Waveform (Rise and Fall Time  5 ns)
3.0V
1.5V 1.5VTest points
0V
Output Waveform
1.5V 1.5VTest points
Output Load
1 TTL + 30pF
Read Cycle
Parameter Symbol Test Condition Min. Typ. Max. Unit Notes
Read cycle time tRC 85 ns Address access time tACC
access time
CE
access time
OE
Output disable time tDF Output hold time tOH 0 ns
RESET RESET RESET
CE
pulse width hold time before read low to read mode
low to /BYTE low, high
low output disable time high access time
tCE tOE
tRP 500 ns tRH 50 ns
tREADY 20
tELFL/tELFH 5 ns
tFLQZ 30 ns tFHQV 85 ns
= OE = VIL
CE
= VIL
OE
= VIL
CE
= VIL or CE = VIL
OE
85 ns 85 ns 40 ns 30 ns
µs
Remark: tDF is the time from inactivation of CE or OE to Hi-Z state output.
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A29DL323 Series
WE
WE
WE
WE
WE
BY
when
AC Characteristics
Write Cycle (Program / Erase) Parameter Symbol Min. Typ. Max. Unit Notes
Write cycle time tWC 85 ns Address setup time ( Address setup time (CE to address)
Address hold time (WE to address) Address hold time (CE to address)
Input data setup time tDS 35 ns Input data hold time tDH 0 ns
hold time
OE
Read recovery time before write (OE to CE) Read recovery time before write (OE to WE)
setup time (CE to
setup time (WE to CE)
CE
hold time (CE to
hold time (WE to CE)
CE
Write pulse width tWP 35 ns
pulse width
CE
Write pulse width high tWPH 30 ns
pulse width high
CE
Byte programming operation time tBPG 9 200 Word programming operation time tWPG 11 200 Sector erase operation time tSER 0.7 5 s 1 VCC set time tVCS 50
RY/BY recovery time
RESET RESET
sector group is temporarily unprotect
RESET
From completion of automatic program / erase to data output time
RY/BY delay time from valid program or erase operation Address setup time toOE low in toggle bit
Address hold time to CE or OE high in toggle bit
pulse width high-voltage (VID) hold time from high of RY/
hold time
to address)
Read 0 Toggle bit, Data polling
)
)
tAC 0 ns tAS 0 ns
tAH 45 ns tAH 45 ns
tOEH
10
tGHEL 0 ns
tGHWL 0 ns
tWS 0 ns
tCS 0 ns
tWH 0 ns
tCH 0 ns
tCP 35 ns
tCPH 30 ns
tRB 0 ns
tRP 500 ns
tRRB 20
tRH 50 ns
tEOE 85 ns
tBUSY 90 ns
tASO 15 ns tAHT 0 ns
ns
µs µs
µs
µs
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WE
Write Cycle (Program / Erase) (continued) Parameter Symbol Min. Typ. Max. Unit Notes
pulse width high for toggle bit
CE
pulse width high for toggle bit
OE
Voltage transition time tVLHT 4 Rise time to VID ( Rise time to VACC (
Erase timeout time tTOW 50 Erase suspend transition time tSPD 20
Notes:
1. The preprogramming time prior to the erase operation is not included.
2. Sector group protection and accelerated mode only.
3. Sector group protection only.
4. Table only.
Write operation (Erase / Program) Performance
Sector erase time Excludes programming time prior to erasure 0.7 5 s Chip erase time Excludes programming time prior to erasure 50 s Byte programming time Excludes system-level overhead 9 200 Word programming time Excludes system-level overhead 11 200
Accelerated programming time Excludes system-level overhead 7 150 Erase / Program cycle 1,000,000 cycle
RESET
Parameter Description Min. Typ. Max. Unit
)
(ACC))
tCEPH 20 ns tOEPH 20 ns
µs
tVIDR 500 ns 3
tVACCR 500 ns 2
µs µs
µs µs
BYTE mode 40 Chip programming time Excludes system-level overhead WORD mode 25
s
µs
2
4 4
PRELIMINARY (May, 2002, Version 0.0) 32 AMIC Technology, Inc.
Page 33
A29DL323 Series
Timing Waveform for Read Cycle (1)
t
RC
Addresses (Input) Addresses Stable
t
ACC
CE (Input)
t
DF
t
OH
OE (Input)
WE (Input)
t
OEH
t
CE
t
OE
I/O (Output)
High-Z
Timing Waveform for Read Cycle (2)
t
RC
Addresses (Input) Addresses Stable
t
CE (Input)
OE (Input)
I/O (Output)
t
RP
RH
High-Z
t
READY
t
ACC
t
CE
Data Out
Data Out
High-Z
t
OH
High-Z
PRELIMINARY (May, 2002, Version 0.0) 33 AMIC Technology, Inc.
Page 34
A29DL323 Series
Timing Waveform for Sector Group Protection
VCC
V
V
RESET
(Input)
Address
(Input)
A0
(Input)
A1
(Input)
A6
(Input)
tVCS
ID
IH
tVIDR
tVLHT
tWC
tWC
SGAx SGAx SGAy
CE
(Input)
OE
(Input)
WE
tWP TIMEOUT
(Input)
tOE
I/O
(Input / Outpu)
60H 60H 40H
01H
(Note)
60H
Note: The sector group protection verification result is output 01H: The sector group is protected. 00H: The sector group is not protected
PRELIMINARY (May, 2002, Version 0.0) 34 AMIC Technology, Inc.
Page 35
A29DL323 Series
Timing Waveform for Temporary Sector Group Unprotect
VCC
V
ID
V
IH
RESET
(Input)
WE
(Input)
CE
(Input)
RY/BY
(Output)
tVCS
tVIDR
t
VLHT
Period during which protection is canceled
Timing Waveform for Accelerated Mode
Program or Erase Command Sequence
~
~
~
~
~
~
t
RRB
t
VLHT
t
VLHT
VCC
V
ID
V
IH
RESET
(Input)
CE
(Input)
WE
(Input)
RY/BY
(Output)
tVCS
t
VLHT
tVACCR
~
~
Program or Erase Command Sequence
~
~
~
~
~
~
Accelerated mode period
t
RRB
t
VLHT
t
VLHT
PRELIMINARY (May, 2002, Version 0.0) 35 AMIC Technology, Inc.
Page 36
A29DL323 Series
WE
Timing Waveform for Dual Operation
tRC tWC tRC tWC tRC tWC
Address
(Input)
BA1
tAS tAH tACC
CE
(Input)
OE
(Input)
WE
(Input)
I/O
(Input / Outpu)
Output InputOutput StatusOutput
Timing Waveform for Write Cycle (
3rd and 4th write cycle
Addresses
(Input)
555H
t
WC
BA2 BA1 BA2 BA1 BA2
tAS
tCEPH
tGHWL
tAHT
tCE
tOEtOEHtWP
tDHtDS
tDF
tDF
Input
Controlled)
Data Polling
PA
t
AS
t
AH
PA
t
RC
CE
(Input)
OE
(Input)
WE
(Input)
I/O (Input / Output)
Note :
1. This timing waveform shows the last two write cycles among the program command sequence's four write cycles, and data polling.
2. This timing waveform shows the WORD mode's case. In the BYTE mode, address to be input is different from the WORD mode. See Table 8. Command Sequence.
3. PA : Program address PD : Program data I/O7 : The output of the complement of the data written to the device. D
t
GHWL
t
t
WP
t
CS
A0H
: The output of the data written to the device.
OUT
CH
t
WPH
t
DH
tDS
PD
t
BPG
or t
WPG
I/O
D
7
OUT
tCE
tOE
D
OUT
tOH
PRELIMINARY (May, 2002, Version 0.0) 36 AMIC Technology, Inc.
Page 37
A29DL323 Series
CE
Timing Waveform for Write Cycle (
3rd and 4th write cycle
I/O (Input / Output)
Addresses
(Input)
CE
(Input)
OE
(Input)
WE
(Input)
Note :
1. This timing waveform shows the last two write cycles among the program command sequence's four write cycles, and data polling.
2. This timing waveform shows the WORD mode's case. In the BYTE mode, address to be input is different from the WORD mode. See Table 8. Command Sequence.
3. PA : Program address PD : Program data I/O7 : The output of the complement of the data written to the device. D
: The output of the data written to the device.
OUT
t
GHWL
555H
t
CP
t
WS
t
WC
A0H
Controlled)
PA
t
AS
t
CPH
t
WH
t
DS
tDH
Data Polling
PA
t
t
AH
t
BPG
or t
WPG
PD
I/O
D
7
OUT
RC
tCE
tOE
D
OUT
tOH
PRELIMINARY (May, 2002, Version 0.0) 37 AMIC Technology, Inc.
Page 38
A29DL323 Series
Timing Waveform for Sector / Chip Erase
t
RC
t
WC
Address
(Input)
555H
2AAH 555H 555H 2AAH
t
AH
FSA
(Note)
CE
(Input)
t
t
CS
CH
OE
(Input)
GHWL
t
WP
WPH
t
t
WE
(Input)
DH
DS
t
55H
(10H for chip erase)
30H
I/O
(Input / Outpu)
t
AAH AAH80H 55H
VCS
t
VCC
Note :
1. FSA is the sector address to be erased. In the case of chip erase, input 555H (WORD mode), AAAH (BYTE mode).
2. This timing chart shows the WORD mode's case. In the BYTE mode, address to be input is different from the WORD mode. See Table 8. Command Sequence.
PRELIMINARY (May, 2002, Version 0.0) 38 AMIC Technology, Inc.
Page 39
A29DL323 Series
Timing Waveform for Data Polling
CE
(Input)
OE
(Input)
WE
(Input)
I/O7
(Output)
I/O0-I/O6 (Output)
RY/BY(Output)
Note :
1. I/O7 = D
t
CH
t
OEH
t
BPG, tWPG, tSER
t
OE
t
CE
I/O
7
Status Data
BUSY
t
OUT
: True value of program data (indicates completion of automatic program / erase)
EOE
t
D
OUT
(Note)
Valid Data
t
DF
Hi-Z
Hi-Z
PRELIMINARY (May, 2002, Version 0.0) 39 AMIC Technology, Inc.
Page 40
A29DL323 Series
Timing Waveform for Toggle Bit
Addresses
(Input)
CE
(Input)
WE
(Input)
OE
(Input)
I/O6, I/O
(Input / Output)
RYBY
(Output)
2
Input Data
t
BUSY
AHT
t
t
OEH
t
DH
OE
t
Toggle
t
OEPH
VA
t
ASO
t
AHT
Toggle
t
CEPH
t
AS
t
CE
Toggle
t
OEH
Stop Toggle
(note)
Valid
Data Out
Note :
1. I/O6 stops the toggle (indicates automatic program / erase completion).
Timing Waveforms for I/O2 vs. I/O6
WE
(Input)
I/O
6
(Output)
I/O
2
(Output)
Input of
Automatic Erase
Command
Erase
Suspended
~
~
Erasure
~
~
~
~
Toggle I/O2 and I/O6 (CE or OE is used for toggle)
~
~
Erase Suspend
Read
~
~
~
~
Erase Suspended
Input of Program
Command
~
~
Erase Suspend Input of
Program Command
~
~
~
~
~
Read
~
~
~
~
~
Erase Suspend
Erase
Resumed
~
Erasure
~
~
~
~
Completion of
Erasure
~
PRELIMINARY (May, 2002, Version 0.0) 40 AMIC Technology, Inc.
Page 41
A29DL323 Series
BYTE
Timing Waveform for RY/BY(Read / Busy)
CE
(Input)
WE
(Input)
RY/BY
(Output)
Timing Waveform for
WE
(Input)
RESET
(Input)
RY/BY
(Output)
RESET
/ RY / BY
~
~
t
BUSY
t
RB
t
RP
Rising Edge of the Last Write Pulse
Automatic Program or Erase
t
RPD
Timing Waveform for
Failing Edge of Last Write Pulse
OE, WE
(Input)
Input Determined
BYTE
(Input)
t
t
PRELIMINARY (May, 2002, Version 0.0) 41 AMIC Technology, Inc.
AH
AS
Page 42
A29DL323 Series
Timing Waveform for BYTE Mode Switching
CE
(Input)
BYTE
15
I/O
(Output), A-1(Input)
(Input)
I/O0 to I/O
(Output)
14
Hi-Z
Hi-Z
t
ELFL
Data Output I/O0 to I/O
Data Output
15
I/O
FLQZ
t
Data Output
14
ACC
t
I/O0 to I/O
7
Hi-Z
Address Input
A-1
Timing Waveform for WORD Mode Switching
CE
(Input)
1
5
I/O
(Output), A-1(Input)
BYTE
(Input)
I/O0 to I/O
(Output)
CE
t
ELFH
t
14
Hi-Z
Data Output
I/O0 to I/O
Address Input
FHQV
t
7
A-1
Data Output
I/O0 to I/O
Data Output
I/O
Hi-Z
14
Hi-Z
15
PRELIMINARY (May, 2002, Version 0.0) 42 AMIC Technology, Inc.
Page 43
A29DL323 Series
Latch-up Characteristics
Description Min. Max.
Input Voltage with respect to VSS on all I/O pins
-1.0V VCC+1.0V VCC Current Input voltage with respect to VSS on all pins except I/O pins
(including A9, OEand
Includes all pins except VCC. Test conditions: VCC = 5.0V, one pin at time.
RESET
)
Capacitance (TA = 25°°C, f = 1MHz)
Parameter Symbol Parameter Description
CIN Input Capacitance
COUT
Notes:
1. VIN : Input voltage, VOUT : Output voltage
2. These parameters are not 100% tested.
Output Capacitance
Test Setup
VOUT=0
Data Retention
Parameter
Minimum Pattern Data Retention Time
Test Conditions
150°C 125°C
VIN=0
-100 mA
-1.0V
Typ.
6
8.5
Min
10 20 Years
+100 mA
12.5V
Max.
7.5 pF 12
Unit
Years
Unit
pF
PRELIMINARY (May, 2002, Version 0.0) 43 AMIC Technology, Inc.
Page 44
A29DL323 Series
Ordering Information
Part No.
A29DL323TV-90
A29DL323UV-90
A29DL323TG-90
A29DL323UG-90
Access Time
(ns)
90 2.7 to 3.6
Operating Supply
Voltage
(V)
Boot Sector Package
Top Address (Sector)
(T type)
Bottom Address (Sector)
(B type)
Top Address (Sector)
(T type)
Bottom Address (Sector)
(B type)
48Pin TSOP
48Pin TSOP
63-ball TFBGA
63-ball TFBGA
PRELIMINARY (May, 2002, Version 0.0) 44 AMIC Technology, Inc.
Page 45
A29DL323 Series
Package Information TSOP 48L (Type I) Outline Dimensions unit: inches/mm
D
D1
1
24 25
Detail "A"
48
c
E
0.25
A
A1
A2
y D
b
e
S
θ
L
Detail "A"
Symbol
A - - 0.047 - - 1.20 A1 0.002 - 0.006 0.05 - 0.15 A2 0.037 0.039 0.042 0.94 1.00 1.06
b 0.007 0.009 0.011 0.18 0.22 0.27 c 0.004 - 0.008 0.12 - 0.20
D 0.779 0.787 0.795 19.80 20.00 20.20
D1 0.720 0.724 0.728 18.30 18.40 18.50
E - 0.472 0.476 - 12.00 12.10
e 0.020 BASIC 0.50 BASIC L 0.016 0.020 0.024 0.40 0.50 0.60
S 0.011 Typ. 0.28 Typ.
y - - 0.004 - - 0.10 θ
Dimensions in inches Dimensions in mm
Min Nom Max Min Nom Max
- -
Notes:
1. The maximum value of dimension D includes end flash.
2. Dimension E does not include resin fins.
3. Dimension S includes end flash.
PRELIMINARY (May, 2002, Version 0.0) 45 AMIC Technology, Inc.
Page 46
A29DL323 Series
Package Information
63 BALLS TFBGA (7 x 11mm) Outline Dimensions unit: mm
TOP VIEW BOTTOM VIEW
Ball#A1 CORNER
M
A0.10
B C
M
C
Ball*A1 CORNER
8 7 6 5 4 3 2 1
0.0511.00 ±
8.8
0.8
0.05
0.35
A B C D E F G H J K L M
B
A
7.00 0.05
±
0.050.25 ±
1.2 MAX.
1.1
SIDE VIEW
SEATING PLANE
C
4
5.6
// 0.1 C
0.08 C
0.7
PRELIMINARY (May, 2002, Version 0.0) 46 AMIC Technology, Inc.
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