Datasheet A29400UV-90, A29400UM-90, A29400TM, A29400TM-55 Datasheet (AMIC)

A29400 Series

512K X 8 Bit / 256K X 16 Bit CMOS 5.0 Volt-only,

Preliminary Boot Sector Flash Memory

Features

n 5.0V ± 10% for read and write operations
n Access times:

- 55/70/90 (max.)
n Current:

- 20 mA typical active read current

- 30 mA typical program/erase current

- 1 µA typical CMOS standby
n Flexible sector architecture

- 16 Kbyte/ 8 KbyteX2/ 32 Kbyte/ 64 KbyteX7 sectors

- 8 Kword/ 4 KwordX2/ 16 Kword/ 32 KwordX7 sectors

- Any combination of sectors can be erased

- Supports full chip erase

- Sector protection:

A hardware method of protecting sectors to prevent
any inadvertent program or erase operations within
that sector

n Top or bottom boot block configurations available
n Embedded Erase Algorithms

- Embedded Erase algorithm will automatically erase
the entire chip or any combination of designated
sectors and verify the erased sectors

- Embedded Program algorithm automatically writes
and verifies bytes at specified addresses

General Description

The A29400 is a 5.0 volt only Flash memory organized as
524,288 bytes of 8 bits or 262,144 words of 16 bits each. The

A29400 offers the
further divided into eleven sectors for flexible sector erase

capability. The 8 bits of data appear on I/O0 - I/O7 while the
addresses are input on A1 to A17; the 16 bits of data appear on
I/O0~I/O15. The A29400 is offered in 44-pin SOP and 48-Pin
TSOP packages. This device is designed to be programmed in­system with the standard system 5.0 volt VCC supply. Additional

12.0 volt VPP is not required for in-system write or erase
operations. However, the A29400 can also be programmed in

standard EPROM programmers.
The A29400 has the first toggle bit, I/O6, which indicates whether
an Embedded Program or Erase is in progress, or it is in the
Erase Suspend. Besides the I/O6 toggle bit, the A29400 has a
second toggle bit, I/O2, to indicate whether the addressed sector
is being selected for erase. The A29400 also offers the ability to
program in the Erase Suspend mode. The standard A29400
offers access times of 55, 70 and 90 ns, allowing high-speed
microprocessors to operate without wait states. To eliminate bus

contention the device has separate chip enable (CE), write
enable (WE) and output enable (OE) controls.

RESET

function. The 512 Kbytes of data are

n Typical 100,000 program/erase cycles per sector
n 20-year data retention at 125°C

- Reliable operation for the life of the system
n Compatible with JEDEC-standards

- Pinout and software compatible with single-power­supply Flash memory standard

- Superior inadvertent write protection

n

n Erase Suspend/Erase Resume

n Hardware reset pin (

n Package options

The device requires only a single 5.0 volt power supply for both
read and write functions. Internally generated and regulated
voltages are provided for the program and erase operations.
The A29400 is entirely software command set compatible with
the JEDEC single-power-supply Flash standard. Commands are
written to the command register using standard microprocessor
write timings. Register contents serve as input to an internal
state-machine that controls the erase and programming circuitry.
Write cycles also internally latch addresses and data needed for
the programming and erase operations. Reading data out of the
device is similar to reading from other Flash or EPROM devices.
Device programming occurs by writing the proper program
command sequence. This initiates the Embedded Program
algorithm - an internal algorithm that automatically times the
program pulse widths and verifies proper program margin.
Device erasure occurs by executing the proper erase command
sequence. This initiates the Embedded Erase algorithm - an
internal algorithm that automatically preprograms the array (if it
is not already programmed) before executing the erase
operation. During erase, the device automatically times the
erase pulse widths and verifies proper erase margin.

Polling and toggle bits

Data

- Provides a software method of detecting completion
of program or erase operations

- Suspends a sector erase operation to read data from,

or program data to, a non-erasing sector, then
resumes the erase operation

RESET

- Hardware method to reset the device to reading array
data

- 44-pin SOP or 48-pin TSOP (I)

)

PRELIMINARY (December, 2002, Version 0.2) 1 AMIC Technology, Corp.

A29400 Series

The host system can detect whether a program or erase
operation is complete by reading the I/O7 (

Polling) and

Data

I/O6 (toggle) status bits. After a program or erase cycle has
been completed, the device is ready to read array data or
accept another command.
The sector erase architecture allows memory sectors to be
erased and reprogrammed without affecting the data
contents of other sectors. The A29400 is fully erased when
shipped from the factory.
The hardware sector protection feature disables operations
for both program and erase in any combination of the

sectors of memory. This can be achieved via programming
equipment.
The Erase Suspend feature enables the user to put erase on
hold for any period of time to read data from, or program data
to, any other sector that is not selected for erasure. True
background erase can thus be achieved.
Power consumption is greatly reduced when the device is
placed in the standby mode.

The hardware

RESET

pin terminates any operation in

progress and resets the internal state machine to reading
array data.

Pin Configurations

n SOP n TSOP (I)

NC

RY/BY

A17

VSS

OE

I/O0

I/O1
I/O9
I/O2

I/O10

I/O3

I/O11

A7
A6
A5
A4
A3
A2
A1
A0
CE

1
2

3
4
5
6
7
8
9
10
11
12
13
14
15
16 29
17
18
19
20
21
22

A29400

RESET

44

WE

43

A8

42

A9

41

A10

40

A11

39

A12

38

A13

37

A14

36

A15

35

A16

34
33

BYTE
VSS

32

I/O15 (A-1)

31

I/O7

30

I/O14I/O8

28

I/O6

27

I/O13

26

I/O5

25

I/O12

24

I/O4
VCC

23

RESET

RY/BY

1
2

A14

3

A13

4

A12

5

A11

6

A10

7

A9

8

A8

9

NC

10

NC

11

WE

12
13

NC

14

NC

15
16

NC

17

A17

18

A7

19

A6

20

A5

21

A4

22

A3

23

A2

24 25

A1

A29400V

48

A16A15

47

BYTE

46

VSS

45

I/O15 (A-1)

44

I/O7

43

I/O14

42

I/O6

41

I/O13

40

I/O5

39

I/O12

38

I/O4

37

VCC

36

I/O11

35

I/O3

34

I/O10

33 I/O2

32 I/O9
31

I/O1

30

I/O8

29

I/O0

28

OE

27

VSS

26

CE
A0

PRELIMINARY (December, 2002, Version 0.2) 2 AMIC Technology, Corp.

A29400 Series

WE

BYTE

Block Diagram

VCC

VSS

RESET

RY/BY

Sector Switches

Erase Voltage

Generator

I/O0 - I/O15 (A-1)

Input/Output

Buffers

WE

BYTE

CE
OE

VCC Detector

A0-A17

Pin Descriptions

State

Control

Command

Register

I/O15 (A-1)

PGM Voltage

Generator

Chip Enable

Output Enable

Logic

STB

Timer

Address Latch

Pin No. Description

A0 - A17 Address Inputs

I/O0 - I/O14 Data Inputs/Outputs

I/O15

Data Input/Output, Word Mode

A-1 LSB Address Input, Byte Mode

CE

OE

RESET

Chip Enable
Write Enable
Output Enable
Hardware Reset (N/A A294001)
Selects Byte Mode or Word Mode

Y-Decoder

X-decoder

STB

Data Latch

Y-Gating

Cell Matrix

RY/BY

Ready/

BUSY

- Output

VSS Ground

VCC Power Supply

PRELIMINARY (December, 2002, Version 0.2) 3 AMIC Technology, Corp.

A29400 Series

CE

WE

BYTE

BYTE

Absolute Maximum Ratings*

Ambient Operating Temperature . . . . . -55°C to + 125°C

Storage Temperature . . . . . . . . . . . . . . -65°C to + 125°C

Ground to VCC . . . . . . . . . . . . . . . . . . . . . . -2.0V to 7.0V

Output Voltage (Note 1) . . . . . . . . . . . . . . . -2.0V to 7.0V

A9, OE &

All other pins (Note 1) . . . . . . . . . . . . . . . . . -2.0V to 7.0V

Output Short Circuit Current (Note 3) . . . . . . . . . . 200mA

RESET

(Note 2) . . . . . . . . . . . -2.0V to 12.5V

Notes:

1. Minimum DC voltage on input or I/O pins is -0.5V.
During voltage transitions, inputs may undershoot VSS
to -2.0V for periods of up to 20ns. Maximum DC voltage
on output and I/O pins is VCC +0.5V. During voltage
transitions, outputs may overshoot to VCC +2.0V for
periods up to 20ns.

2. Minimum DC input voltage on A9 pins is -0.5V. During
voltage transitions, A9,OEand

VSS to -2.0V for periods of up to 20ns. Maximum DC
input voltage on A9 and OE is +12.5V which may

overshoot to 13.5V for periods up to 20ns.

3. No more than one output is shorted at a time. Duration
of the short circuit should not be greater than one
second.

RESET

may overshoot

Device Bus Operations

This section describes the requirements and use of the
device bus operations, which are initiated through the
internal command register. The command register itself
does not occupy any addressable memory location. The
register is composed of latches that store the commands,
along with the address and data information needed to

Table 1. A29400 Device Bus Operations

*Comments

Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to this device.
These are stress ratings only. Functional operation of
this device at these or any other conditions above
those indicated in the operational sections of these
specification is not implied or intended. Exposure to
the absolute maximum rating conditions for extended
periods may affect device reliability.

Operating Ranges

Commercial (C) Devices

Ambient Temperature (TA) . . . . . . . . . . . . . . 0°C to +70°C

VCC Supply Voltages

VCC for ± 10% devices . . . . . . . . . . . . . . +4.5V to +5.5V

Operating ranges define those limits between which the
functionally of the device is guaranteed.

execute the command. The contents of the register serve
as inputs to the internal state machine. The state machine
outputs dictate the function of the device. The appropriate
device bus operations table lists the inputs and control
levels required, and the resulting output. The following
subsections describe each of these operations in further
detail.

Read L L H H AIN DOUT DOUT High-Z
Write L H L H AIN DIN DIN High-Z
CMOS Standby
TTL Standby H X X H X High-Z High-Z High-Z
Output Disable L H H H X High-Z High-Z High-Z
Hardware Reset X X X L X High-Z High-Z High-Z
Temporary Sector

Unprotect (See Note)

Legend:
L = Logic Low = VIL, H = Logic High = VIH, VID = 12.0 ± 0.5V, X = Don't Care, DIN = Data In, DOUT = Data Out, AIN = Address In
Note:
See the "Sector Protection/Unprotection" section and Temporary Sector Unprotect for more information.

PRELIMINARY (December, 2002, Version 0.2) 4 AMIC Technology, Corp.

VCC ± 0.5 V

X X X VID AIN DIN DIN X

OE

X X

RESET

VCC ± 0.5 V

A0 - A17 I/O0 - I/O7

X High-Z High-Z High-Z

I/O8 - I/O15 Operation
=VIH

=VIL

A29400 Series

BYTE

BYTE

BYTE

Word/Byte Configuration

The
operate in the byte or word configuration. If the

is set at logic ”1”, the device is in word configuration, I/O15­I/O0 are active and controlled by CE and OE.

If the
configuration, and only I/O0-I/O7 are active and controlled

by CE and OE. I/O8-I/O14 are tri-stated, and I/O15 pin is
used as an input for the LSB(A-1) address function.

pin determines whether the I/O pins I/O15-I/O0

pin

pin is set at logic “0”, the device is in byte

Requirements for Reading Array Data

To read array data from the outputs, the system must drive
the CEand OE pins to VIL. CE is the power control and

selects the device. OE is the output control and gates
array data to the output pins. WE should remain at VIH all

the time during read operation. The internal state machine
is set for reading array data upon device power-up, or after
a hardware reset. This ensures that no spurious alteration
of the memory content occurs during the power transition.
No command is necessary in this mode to obtain array
data. Standard microprocessor read cycles that assert valid
addresses on the device address inputs produce valid data
on the device data outputs. The device remains enabled for
read access until the command register contents are
altered.
See "Reading Array Data" for more information. Refer to the
AC Read Operations table for timing specifications and to
the Read Operations Timings diagram for the timing
waveforms, lCC1 in the DC Characteristics table represents
the active current specification for reading array data.

Writing Commands/Command Sequences

To write a command or command sequence (which
includes programming data to the device and erasing

sectors of memory), the system must drive WE and CE to
VIL, and OE to VIH. An erase operation can erase one

sector, multiple sectors, or the entire device. The Sector
Address Tables indicate the address range that each sector
occupies. A "sector address" consists of the address inputs
required to uniquely select a sector. See the "Command
Definitions" section for details on erasing a sector or the
entire chip, or suspending/resuming the erase operation.
After the system writes the autoselect command sequence,
the device enters the autoselect mode. The system can
then read autoselect codes from the internal register (which
is separate from the memory array) on I/O7 - I/O0. Standard
read cycle timings apply in this mode. Refer to the
"Autoselect Mode" and "Autoselect Command Sequence"
sections for more information.
ICC2 in the DC Characteristics table represents the active
current specification for the write mode. The "AC
Characteristics" section contains timing specification tables
and timing diagrams for write operations.

Program and Erase Operation Status

During an erase or program operation, the system may
check the status of the operation by reading the status bits
on I/O7 - I/O0. Standard read cycle timings and ICC read
specifications apply. Refer to "Write Operation Status" for
more information, and to each AC Characteristics section
for timing diagrams.

Standby Mode

When the system is not reading or writing to the device, it
can place the device in the standby mode. In this mode,
current consumption is greatly reduced, and the outputs are

placed in the high impedance state, independent of the OE
input.

The device enters the CMOS standby mode when the CE
&

RESET

is a more restricted voltage range than VIH.) The device
enters the TTL standby mode when CE is held at VIH, while

RESET

standard access time (tCE) before it is ready to read data.
If the device is deselected during erasure or programming,
the device draws active current until the operation is
completed.
ICC3 in the DC Characteristics tables represents the standby
current specification.

pins are both held at VCC ± 0.5V. (Note that this

is held at VCC±0.5V. The device requires the

Output Disable Mode

When the OE input is at VIH, output from the device is
disabled. The output pins are placed in the high impedance

state.

RESET

The
the device to reading array data. When the system drives
the
immediately terminates any operation in progress, tristates

all data output pins, and ignores all read/write attempts for
the duration of the
the internal state machine to reading array data. The

operation that was interrupted should be reinitiated once
the device is ready to accept another command sequence,
to ensure data integrity.

The
system reset would thus also reset the Flash memory,

enabling the system to read the boot-up firmware from the
Flash memory.

Refer to the AC Characteristics tables for
parameters and diagram.

: Hardware Reset Pin

RESET

RESET

RESET

pin provides a hardware method of resetting

pin low for at least a period of tRP, the device

pin may be tied to the system reset circuitry. A

RESET

pulse. The device also resets

RESET

PRELIMINARY (December, 2002, Version 0.2) 5 AMIC Technology, Corp.

A29400 Series

Table 2. A29400 Top Boot Block Sector Address Table

Sector A17 A16 A15 A14 A13 A12

SA0 0 0 0 X X X 64/32 00000h - 0FFFFh 00000h - 07FFFh
SA1 0 0 1 X X X 64/32 10000h - 1FFFFh 08000h - 0FFFFh
SA2 0 1 0 X X X 64/32 20000h - 2FFFFh 10000h - 17FFFh
SA3 0 1 1 X X X 64/32 30000h - 3FFFFh 18000h - 1FFFFh
SA4 1 0 0 X X X 64/32 40000h - 4FFFFh 20000h - 27FFFh
SA5 1 0 1 X X X 64/32 50000h - 5FFFFh 28000h - 2FFFFh
SA6 1 1 0 X X X 64/32 60000h - 6FFFFh 30000h - 37FFFh
SA7 1 1 1 0 X X 32/16 70000h - 77FFFh 38000h - 3BFFFh
SA8 1 1 1 1 0 0 8/4 78000h - 79FFFh 3C000h - 3CFFFh
SA9 1 1 1 1 0 1 8/4 7A000h - 7BFFFh 3D000h - 3DFFFh

SA10 1 1 1 1 1 X 16/8 7C000h - 7FFFFh 3E000h - 3FFFFh

Table 3. A29400 Bottom Boot Block Sector Address Table

SA0 0 0 0 0 0 X 16/8 00000h - 03FFFh 00000h - 01FFFh
SA1 0 0 0 0 1 0 8/4 04000h - 05FFFh 02000h - 02FFFh
SA2 0 0 0 0 1 1 8/4 06000h - 07FFFh 03000h - 03FFFh
SA3 0 0 0 1 X X 32/16 08000h - 0FFFFh 04000h - 07FFFh
SA4 0 0 1 X X X 64/32 10000h - 1FFFFh 08000h - 0FFFFh
SA5 0 1 0 X X X 64/32 20000h - 2FFFFh 10000h - 17FFFh
SA6 0 1 1 X X X 64/32 30000h - 3FFFFh 18000h - 1FFFFh
SA7 1 0 0 X X X 64/32 40000h - 4FFFFh 20000h - 27FFFh
SA8 1 0 1 X X X 64/32 50000h - 5FFFFh 28000h - 2FFFFh
SA9 1 1 0 X X X 64/32 60000h - 6FFFFh 30000h - 37FFFh

SA10 1 1 1 X X X 64/32 70000h - 7FFFFh 38000h - 3FFFFh

Autoselect Mode

The autoselect mode provides manufacturer and device
identification, and sector protection verification, through
identifier codes output on I/O7 - I/O0. This mode is primarily
intended for programming equipment to automatically
match a device to be programmed with its corresponding
programming algorithm. However, the autoselect codes
can also be accessed in-system through the command
register.
When using programming equipment, the autoselect mode
requires VID (11.5V to 12.5 V) on address pinA9. Address
pins A6, A1, and A0 must be as shown in Autoselect

Sector Size

(Kbytes/Kwords)

(Kbytes)

Codes (High Voltage Method) table. In addition, when
verifying sector protection, the sector address must appear
on the appropriate highest order address bits. Refer to the
corresponding Sector Address Tables. The Command
Definitions table shows the remaining address bits that are
don't care. When all necessary bits have been set as
required, the programming equipment may then read the
corresponding identifier code on I/O7 - I/O0.To access the
autoselect codes in-system, the host system can issue the
autoselect command via the command register, as shown
in the Command Definitions table. This method does not
require VID. See "Command Definitions" for details on
using the autoselect mode.

Address Range (in hexadecimal)

(x8)

Address Range

Address Range Sector A17 A16 A15 A14 A13 A12 Sector Size

(x8)

Address Range

(x16)

Address Range

(x16)

Address Range

PRELIMINARY (December, 2002, Version 0.2) 6 AMIC Technology, Corp.

A29400 Series

Table 4. A29400 Autoselect Codes (High Voltage Method)

Description Mode A17

A12

Manufacturer ID: AMIC X X VID X L X L L X 37h

Word B3h B0h Device ID: A29400

(Top Boot Block)

(Bottom Boot Block)
Continuation ID X X VID X L X H H X 7Fh

Sector Protection Verification SA X VID X L X H L

L=Logic Low= VIL, H=Logic High=VIH, SA=Sector Address, X=Don’t Care.

Byte

Word B3h 31h Device ID: A29400

Byte

A11

to

X X VID X L X L H

X X VID X L X L H

to

A10

A9 A8

to

A7

A6 A5

to

A2

A1 A0 I/O8

to

I/O15

X B0h

X 31h

X

X

(protected)

(unprotected)

I/O7

to

I/O0

01h

00h

PRELIMINARY (December, 2002, Version 0.2) 7 AMIC Technology, Corp.

A29400 Series

WE

WE

WE

WE

Sector Protection/Unprotection

The hardware sector protection feature disables both program
and erase operations in any sector. The hardware sector
unprotection feature re-enables both program and erase
operations in previously protected sectors.
Sector protection/unprotection must be implemented using
programming equipment. The procedure requires a high
voltage (VID) on address pin A9 and the control pins.
The device is shipped with all sectors unprotected.
It is possible to determine whether a sector is protected or
unprotected. See "Autoselect Mode" for details.

Temporary Sector Unprotect

This feature allows temporary unprotection of previous
protected sectors to change data in-system. The Sector

Unprotect mode is activated by setting the
During this mode, formerly protected sectors can be

programmed or erased by selecting the sector addresses.
Once VID is removed from the
protected sectors are protected again. Figure 1 shows the

algorithm, and the Temporary Sector Unprotect diagram
shows the timing waveforms, for this feature.

RESET

RESET

pin, all the previously

pin to VID.

Hardware Data Protection

The requirement of command unlocking sequence for
programming or erasing provides data protection against
inadvertent writes (refer to the Command Definitions table). In
addition, the following hardware data protection measures
prevent accidental erasure or programming, which might
otherwise be caused by spurious system level signals during
VCC power-up transitions, or from system noise. The device is
powered up to read array data to avoid accidentally writing
data to the array.

Write Pulse "Glitch" Protection

Noise pulses of less than 5ns (typical) on OE, CE or WE
do not initiate a write cycle.

Logical Inhibit

Write cycles are inhibited by holding any one of OE=VIL, CE
= VIH or
must be a logical zero while OE is a logical one.

= VIH. To initiate a write cycle, CE and

Power-Up Write Inhibit

If
device does not accept commands on the rising edge of

reading array data on the initial power-up.

= CE = VIL and

. The internal state machine is automatically reset to

= VIH during power up, the

OE

START

RESET = VID

(Note 1)

Perform Erase or

Program Operations

RESET = VIH

Temporary Sector

Unprotect

Completed (Note 2)

Notes:

1. All protected sectors unprotected.

2. All previously protected sectors are protected once again.

Figure 1. Temporary Sector Unprotect Operation

PRELIMINARY (December, 2002, Version 0.2) 8 AMIC Technology, Corp.

A29400 Series

WE

BYTE

Command Definitions

Writing specific address and data commands or sequences
into the command register initiates device operations. The
Command Definitions table defines the valid register
command sequences. Writing incorrect address and data
values or writing them in the improper sequence resets the
device to reading array data.

All addresses are latched on the falling edge of WE or CE,
whichever happens later. All data is latched on the rising

edge of
appropriate timing diagrams in the "AC Characteristics"

section.

or CE, whichever happens first. Refer to the

Reading Array Data

The device is automatically set to reading array data after
device power-up. No commands are required to retrieve data.
The device is also ready to read array data after completing
an Embedded Program or Embedded Erase algorithm. After
the device accepts an Erase Suspend command, the device
enters the Erase Suspend mode. The system can read array
data using the standard read timings, except that if it reads at
an address within erase-suspended sectors, the device
outputs status data. After completing a programming
operation in the Erase Suspend mode, the system may once
again read array data with the same exception. See "Erase
Suspend/Erase Resume Commands" for more information on
this mode.
The system must issue the reset command to re-enable the
device for reading array data if I/O5 goes high, or while in the
autoselect mode. See the "Reset Command" section, next.
See also "Requirements for Reading Array Data" in the
"Device Bus Operations" section for more information. The
Read Operations table provides the read parameters, and
Read Operation Timings diagram shows the timing diagram.

Reset Command

Writing the reset command to the device resets the device to
reading array data. Address bits are don't care for this
command. The reset command may be written between the
sequence cycles in an erase command sequence before
erasing begins. This resets the device to reading array data.
Once erasure begins, however, the device ignores reset
commands until the operation is complete.
The reset command may be written between the sequence
cycles in a program command sequence before programming
begins. This resets the device to reading array data (also
applies to programming in Erase Suspend mode). Once
programming begins, however, the device ignores reset
commands until the operation is complete.
The reset command may be written between the sequence
cycles in an autoselect command sequence. Once in the
autoselect mode, the reset command must be written to
return to reading array data (also applies to autoselect during
Erase Suspend).
If I/O5 goes high during a program or erase operation, writing
the reset command returns the device to reading array data
(also applies during Erase Suspend).

Autoselect Command Sequence

The autoselect command sequence allows the host system to
access the manufacturer and devices codes, and determine
whether or not a sector is protected. The Command
Definitions table shows the address and data requirements.
This method is an alternative to that shown in the Autoselect
Codes (High Voltage Method) table, which is intended for
PROM programmers and requires VID on address bit A9.
The autoselect command sequence is initiated by writing two
unlock cycles, followed by the autoselect command. The
device then enters the autoselect mode, and the system may
read at any address any number of times, without initiating
another command sequence.
A read cycle at address XX00h retrieves the manufacturer
code and another read cycle at XX03h retrieves the
continuation code. A read cycle at address XX01h returns the
device code. A read cycle containing a sector address (SA)
and the address 02h in returns 01h if that sector is protected,
or 00h if it is unprotected. Refer to the Sector Address tables
for valid sector addresses.
The system must write the reset command to exit the
autoselect mode and return to reading array data.

Word/Byte Program Command Sequence

The system may program the device by word or byte,
depending on the state of the

four-bus-cycle operation. The program command sequence is
initiated by writing two unlock write cycles, followed by the
program set-up command. The program address and data
are written next, which in turn initiate the Embedded Program
algorithm. The system is not required to provide further
controls or timings. The device automatically provides
internally generated program pulses and verify the
programmed cell margin. Table 5 shows the address and
data requirements for the byte program command sequence.
When the Embedded Program algorithm is complete, the
device then returns to reading array data and addresses are
longer latched. The system can determine the status of the

program operation by using I/O7, I/O6, or RY/BY. See “White
Operation Status” for information on these status bits.
Any commands written to the device during the Embedded
Program Algorithm are ignored. Not that a hardware reset
immediately terminates the programming operation. The Byte
Program command sequence should be reinitiated once the
device has reset to reading array data, to ensure data
integrity.
Programming is allowed in any sequence and across sector
boundaries. A bit cannot be programmed from a “0” back to a
“1”. Attempting to do so may halt the operation and set I/O5 to

“1”, or cause the
operation was successful. However, a succeeding read will

show that the data is still “0”. Only erase operations can
convert a “0” to a “1”.

Polling algorithm to indicate the

Data

pin. Programming is a

PRELIMINARY (December, 2002, Version 0.2) 9 AMIC Technology, Corp.

A29400 Series

WE

START

Write Program

Command
Sequence

Embedded

Program

algorithm in

progress

Data Poll

from System

Verify Data ?

No

Yes

Increment Address

Last Address ?

Yes

Programming

Completed

Note : See the appropriate Command Definitions table for
program command sequence.

Figure 2. Program Operation

Chip Erase Command Sequence

Chip erase is a six-bus-cycle operation. The chip erase
command sequence is initiated by writing two unlock cycles,
followed by a set-up command. Two additional unlock write
cycles are then followed by the chip erase command, which in
turn invokes the Embedded Erase algorithm. The device does
not require the system to preprogram prior to erase. The
Embedded Erase algorithm automatically preprograms and
verifies the entire memory for an all zero data pattern prior to
electrical erase. The system is not required to provide any
controls or timings during these operations. The Command
Definitions table shows the address and data requirements
for the chip erase command sequence.

Any commands written to the chip during the Embedded
Erase algorithm are ignored. The system can determine the
status of the erase operation by using I/O7, I/O6, or I/O2. See
"Write Operation Status" for information on these status bits.
When the Embedded Erase algorithm is complete, the device
returns to reading array data and addresses are no longer
latched.
Figure 3 illustrates the algorithm for the erase operation. See
the Erase/Program Operations tables in "AC Characteristics"
for parameters, and to the Chip/Sector Erase Operation
Timings for timing waveforms.

Sector Erase Command Sequence

Sector erase is a six-bus-cycle operation. The sector erase
command sequence is initiated by writing two unlock cycles,
followed by a set-up command. Two additional unlock write
cycles are then followed by the address of the sector to be
erased, and the sector erase command. The Command
Definitions table shows the address and data requirements
for the sector erase command sequence.
The device does not require the system to preprogram the
memory prior to erase. The Embedded Erase algorithm
automatically programs and verifies the sector for an all zero
data pattern prior to electrical erase. The system is not
required to provide any controls or timings during these
operations.
After the command sequence is written, a sector erase time­out of 50µs begins. During the time-out period, additional
sector addresses and sector erase commands may be
written. Loading the sector erase buffer may be done in any
sequence, and the number of sectors may be from one sector
to all sectors. The time between these additional cycles must
be less than 50µs, otherwise the last address and command
might not be accepted, and erasure may begin. It is
recommended that processor interrupts be disabled during
this time to ensure all commands are accepted. The interrupts
can be re-enabled after the last Sector Erase command is
written. If the time between additional sector erase
commands can be assumed to be less than 50µs, the system
need not monitor I/O3. Any command other than Sector Erase
or Erase Suspend during the time-out period resets the
device to reading array data. The system must rewrite the
command sequence and any additional sector addresses and
commands.
The system can monitor I/O3 to determine if the sector erase
timer has timed out. (See the " I/O3: Sector Erase Timer"
section.) The time-out begins from the rising edge of the final

pulse in the command sequence.
Once the sector erase operation has begun, only the Erase
Suspend command is valid. All other commands are ignored.
When the Embedded Erase algorithm is complete, the device
returns to reading array data and addresses are no longer
latched. The system can determine the status of the erase
operation by using I/O7, I/O6, or I/O2. Refer to "Write
Operation Status" for information on these status bits.

PRELIMINARY (December, 2002, Version 0.2) 10 AMIC Technology, Corp.

A29400 Series

Figure 3 illustrates the algorithm for the erase operation.
Refer to the Erase/Program Operations tables in the "AC
Characteristics" section for parameters, and to the Sector
Erase Operations Timing diagram for timing waveforms.

Erase Suspend/Erase Resume Commands

The Erase Suspend command allows the system to interrupt
a sector erase operation and then read data from, or program
data to, any sector not selected for erasure. This command is
valid only during the sector erase operation, including the
50µs time-out period during the sector erase command
sequence. The Erase Suspend command is ignored if written
during the chip erase operation or Embedded Program
algorithm. Writing the Erase Suspend command during the
Sector Erase time-out immediately terminates the time-out
period and suspends the erase operation. Addresses are
"don't cares" when writing the Erase Suspend command.
When the Erase Suspend command is written during a sector
erase operation, the device requires a maximum of 20µs to
suspend the erase operation. However, when the Erase
Suspend command is written during the sector erase time­out, the device immediately terminates the time-out period
and suspends the erase operation.
After the erase operation has been suspended, the system
can read array data from or program data to any sector not
selected for erasure. (The device "erase suspends" all
sectors selected for erasure.) Normal read and write timings
and command definitions apply. Reading at any address
within erase-suspended sectors produces status data on I/O7

- I/O0. The system can use I/O7, or I/O6 and I/O2 together, to
determine if a sector is actively erasing or is erase­suspended. See "Write Operation Status" for information on
these status bits.
After an erase-suspended program operation is complete, the
system can once again read array data within non-suspended
sectors. The system can determine the status of the program
operation using the I/O7 or I/O6 status bits, just as in the
standard program operation. See "Write Operation Status" for
more information.
The system may also write the autoselect command
sequence when the device is in the Erase Suspend mode.
The device allows reading autoselect codes even at
addresses within erasing sectors, since the codes are not
stored in the memory array. When the device exits the
autoselect mode, the device reverts to the Erase Suspend
mode, and is ready for another valid operation. See
"Autoselect Command Sequence" for more information.

The system must write the Erase Resume command (address
bits are "don't care") to exit the erase suspend mode and
continue the sector erase operation. Further writes of the
Resume command are ignored. Another Erase Suspend
command can be written after the device has resumed
erasing.

START

Write Erase

Command

Sequence

Data Poll

from System

Embedded
Erase
algorithm in
progress

No

Data = FFh ?

Yes

Erasure Completed

Note :

1. See the appropriate Command Definitions table for erase
command sequences.

2. See "I/O3 : Sector Erase Timer" for more information.

Figure 3. Erase Operation

PRELIMINARY (December, 2002, Version 0.2) 11 AMIC Technology, Corp.

A29400 Series

Table 5. A29400 Command Definitions

Command
Sequence

(Note 1)

Read (Note 6) 1 RA RD
Reset (Note 7) 1 XXX F0

Manufacturer ID

Device ID,
Top Boot Block

Device ID,
Bottom Boot Block

Continuation ID

Autoselect (Note 8)

Sector Protect Verify

(Note 9)

Program

Chip Erase

Sector Erase
Erase Suspend (Note 9) 1 XXX B0

Erase Resume (Note 10) 1 XXX 30

Word

Byte

Word

Byte

Word

Byte

Word
Byte

Word

Byte
Word

Byte

Word

Byte

Word

Byte

First Second Third Fourth Fifth Sixth

Cycles

Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data

555 2AA

4

4

4

4

4

4

6

6

AA

AAA

555

AA

AAA
555 2AA 555 X01

AA

AAA
555

AA

AAA
555

AA

AAA

555 2AA

AA

AAA
555 2AA

AA

AAA
555
AAA

AA

555
2AA

555

555
2AA
555
2AA

555

555

555
2AA
555

55

55

55

55

55

55

Bus Cycles (Notes 2 - 5)

555

90 X00 37

555 X01

90

90

555

90

555

90

555

A0 PA PD

555

80

555

80

55

55

AAA

AAA

AAA

AAA

AAA

AAA

AAA

AAA

B3B0

B0

X02

B331

31

X02

X03
X06

(SA)

X02

(SA)

X04

555 2AA

AAA
555 2AA
AAA

7F

XX00
XX01

00
01

AA

555

AA

555

555

55

55 SA 30

AAA

10

Legend:
X = Don't care
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation.

PA = Address of the memory location to be programmed. Addresses latch on the falling edge of the WE or CE pulse, whichever

happens later.

PD = Data to be programmed at location PA. Data latches on the rising edge of WE or CE pulse, whichever happens first.
SA = Address of the sector to be verified (in autoselect mode) or erased. Address bits A17 - A12 select a unique sector.

Note:

1. See Table 1 for description of bus operations.

2. All values are in hexadecimal.

3. Except when reading array or autoselect data, all bus cycles are write operation.

4. Address bits A17 - A11 are don't cares for unlock and command cycles, unless SA or PA required.

5. No unlock or command cycles required when reading array data.

6. The Reset command is required to return to reading array data when device is in the autoselect mode, or if I/O5 goes high
(while the device is providing status data).

7. The fourth cycle of the autoselect command sequence is a read cycle.

8. The data is 00h for an unprotected sector and 01h for a protected sector. See "Autoselect Command Sequence" for more information.

9. The system may read and program in non-erasing sectors, or enter the autoselect mode, when in the Erase Suspend mode.

10. The Erase Resume command is valid only during the Erase Suspend mode.

PRELIMINARY (December, 2002, Version 0.2) 12 AMIC Technology, Corp.

A29400 Series

BY

BY

WE

Write Operation Status

Several bits, I/O2, I/O3, I/O5, I/O6, I/O7, RY/

are provided

in the A29400 to determine the status of a write operation.
Table 6 and the following subsections describe the

functions of these status bits. I/O7, I/O6 and RY/

each

offer a method for determining whether a program or erase
operation is complete or in progress. These three bits are
discussed first.

I/O7:

The

Polling

Data

Polling bit, I/O7, indicates to the host system

Data

whether an Embedded Algorithm is in progress or
completed, or whether the device is in Erase Suspend.

Polling is valid after the rising edge of the final

Data

pulse in the program or erase command sequence.
During the Embedded Program algorithm, the device
outputs on I/O7 the complement of the datum programmed
to I/O7. This I/O7 status also applies to programming during
Erase Suspend. When the Embedded Program algorithm
is complete, the device outputs the datum programmed to
I/O7. The system must provide the program address to
read valid status information on I/O7. If a program address

falls within a protected sector,

Polling on I/O7 is

Data

active for approximately 2µs, then the device returns to
reading array data.

During the Embedded Erase algorithm,

Data

Polling

produces a "0" on I/O7. When the Embedded Erase
algorithm is complete, or if the device enters the Erase

Suspend mode,

Polling produces a "1" on I/O7.This

Data

is analogous to the complement/true datum output
described for the Embedded Program algorithm: the erase
function changes all the bits in a sector to "1"; prior to this,
the device outputs the "complement," or "0." The system
must provide an address within any of the sectors selected
for erasure to read valid status information on I/O7.
After an erase command sequence is written, if all sectors

selected for erasing are protected,

Polling on I/O7 is

Data

active for approximately 100µs, then the device returns to
reading array data. If not all selected sectors are protected,
the Embedded Erase algorithm erases the unprotected
sectors, and ignores the selected sectors that are
protected.
When the system detects I/O7 has changed from the
complement to true data, it can read valid data at I/O7 - I/O0
on the following read cycles. This is because I/O7 may
change asynchronously with I/O0 - I/O6 while Output Enable

(OE) is asserted low. The

Polling Timings (During

Data

Embedded Algorithms) figure in the "AC Characteristics"
section illustrates this. Table 6 shows the outputs for

Polling on I/O7. Figure 4 shows the

Polling algorithm.

Data

Data

START

Read I/O7-I/O0

Address = VA

Yes

I/O7 = Data ?

No

No

Note :

1. VA = Valid address for programming. During a sector
erase operation, a valid address is an address within any
sector selected for erasure. During chip erase, a valid
address is any non-protected sector address.

2. I/O7 should be rechecked even if I/O5 = "1" because
I/O7 may change simultaneously with I/O5.

I/O5 = 1?

Yes

Read I/O7 - I/O0

Address = VA

I/O7 = Data ?

No

FAIL

Yes

PASS

Figure 4. Data Polling Algorithm

PRELIMINARY (December, 2002, Version 0.2) 13 AMIC Technology, Corp.

A29400 Series

BY

WE

WE

WE

RY/

The RY/BY is a dedicated, open-drain output pin that
indicates whether an Embedded algorithm is in progress or

complete. The RY/BY status is valid after the rising edge
of the final
RY/BY is an open-drain output, several RY/BY pins can

be tied together in parallel with a pull-up resistor to VCC.
If the output is low (Busy), the device is actively erasing or
programming. (This includes programming in the Erase
Suspend mode.) If the output is high (Ready), the device is
ready to read array data (including during the Erase
Suspend mode), or is in the standby mode.

Table 6 shows the outputs for RY/BY. Refer to “
Timings”, “Timing Waveforms for Program Operation” and

“Timing Waveforms for Chip/Sector Erase Operation” for
more information.

: Read/

Busy

pulse in the command sequence. Since

RESET

I/O6: Toggle Bit I

Toggle Bit I on I/O6 indicates whether an Embedded
Program or Erase algorithm is in progress or complete, or
whether the device has entered the Erase Suspend mode.
Toggle Bit I may be read at any address, and is valid after

the rising edge of the final
sequence (prior to the program or erase operation), and
during the sector erase time-out.
During an Embedded Program or Erase algorithm
operation, successive read cycles to any address cause

I/O6 to toggle. (The system may use either OE or CE to
control the read cycles.) When the operation is complete,

I/O6 stops toggling.
After an erase command sequence is written, if all sectors
selected for erasing are protected, I/O6 toggles for
approximately 100µs, then returns to reading array data. If
not all selected sectors are protected, the Embedded
Erase algorithm erases the unprotected sectors, and
ignores the selected sectors that are protected.
The system can use I/O6 and I/O2 together to determine
whether a sector is actively erasing or is erase-suspended.
When the device is actively erasing (that is, the Embedded
Erase algorithm is in progress), I/O6 toggles. When the
device enters the Erase Suspend mode, I/O6 stops
toggling. However, the system must also use I/O2 to
determine which sectors are erasing or erase-suspended.
Alternatively, the system can use I/O7 (see the subsection

on " I/O7 :
If a program address falls within a protected sector, I/O6
toggles for approximately 2µs after the program command

sequence is written, then returns to reading array data.
I/O6 also toggles during the erase-suspend-program mode,
and stops toggling once the Embedded Program algorithm
is complete.
The Write Operation Status table shows the outputs for
Toggle Bit I on I/O6. Refer to Figure 5 for the toggle bit
algorithm, and to the Toggle Bit Timings figure in the "AC
Characteristics" section for the timing diagram. The I/O2 vs.
I/O6 figure shows the differences between I/O2 and I/O6 in
graphical form. See also the subsection on " I/O2: Toggle
Bit II".

Data

Polling").

pulse in the command

I/O2: Toggle Bit II

The "Toggle Bit II" on I/O2, when used with I/O6, indicates
whether a particular sector is actively erasing (that is, the
Embedded Erase algorithm is in progress), or whether that
sector is erase-suspended. Toggle Bit II is valid after the

rising edge of the final
sequence.
I/O2 toggles when the system reads at addresses within
those sectors that have been selected for erasure. (The

system may use either OE or CE to control the read
cycles.) But I/O2 cannot distinguish whether the sector is

actively erasing or is erase-suspended. I/O6, by
comparison, indicates whether the device is actively
erasing, or is in Erase Suspend, but cannot distinguish
which sectors are selected for erasure. Thus, both status
bits are required for sector and mode information. Refer to
Table 6 to compare outputs for I/O2 and I/O6.
Figure 5 shows the toggle bit algorithm in flowchart form,
and the section " I/O2: Toggle Bit II" explains the algorithm.
See also the " I/O6: Toggle Bit I" subsection. Refer to the
Toggle Bit Timings figure for the toggle bit timing diagram.
The I/O2 vs. I/O6 figure shows the differences between I/O2
and I/O6 in graphical form.

pulse in the command

Reading Toggle Bits I/O6, I/O2

Refer to Figure 5 for the following discussion. Whenever
the system initially begins reading toggle bit status, it must
read I/O7 - I/O0 at least twice in a row to determine whether
a toggle bit is toggling. Typically, a system would note and
store the value of the toggle bit after the first read. After the
second read, the system would compare the new value of
the toggle bit with the first. If the toggle bit is not toggling,
the device has completed the program or erase operation.
The system can read array data on I/O7 - I/O0 on the
following read cycle.
However, if after the initial two read cycles, the system
determines that the toggle bit is still toggling, the system
also should note whether the value of I/O5 is high (see the
section on I/O5). If it is, the system should then determine
again whether the toggle bit is toggling, since the toggle bit
may have stopped toggling just as I/O5 went high. If the
toggle bit is no longer toggling, the device has successfully
completed the program or erase operation. If it is still
toggling, the device did not complete the operation
successfully, and the system must write the reset
command to return to reading array data.
The remaining scenario is that the system initially
determines that the toggle bit is toggling and I/O5 has not
gone high. The system may continue to monitor the toggle
bit and I/O5 through successive read cycles, determining
the status as described in the previous paragraph.
Alternatively, it may choose to perform other system tasks.
In this case, the system must start at the beginning of the
algorithm when it returns to determine the status of the
operation (top of Figure 5).

PRELIMINARY (December, 2002, Version 0.2) 14 AMIC Technology, Corp.

A29400 Series

I/O5: Exceeded Timing Limits

I/O5 indicates whether the program or erase time has
exceeded a specified internal pulse count limit. Under
these conditions I/O5 produces a "1." This is a failure
condition that indicates the program or erase cycle was not
successfully completed.
The I/O5 failure condition may appear if the system tries to
program a "1 "to a location that is previously programmed
to "0." Only an erase operation can change a "0" back to a
"1." Under this condition, the device halts the operation,
and when the operation has exceeded the timing limits,
I/O5 produces a "1."
Under both these conditions, the system must issue the
reset command to return the device to reading array data.

START

Read I/O7-I/O0

Read I/O7-I/O0

(Note 1)

I/O3: Sector Erase Timer

After writing a sector erase command sequence, the
system may read I/O3 to determine whether or not an
erase operation has begun. (The sector erase timer does
not apply to the chip erase command.) If additional sectors
are selected for erasure, the entire time-out also applies
after each additional sector erase command. When the
time-out is complete, I/O3 switches from "0" to "1." The
system may ignore I/O3 if the system can guarantee that
the time between additional sector erase commands will
always be less than 50µs. See also the "Sector Erase
Command Sequence" section.
After the sector erase command sequence is written, the

system should read the status on I/O7 (

Data

Polling) or

I/O6 (Toggle Bit 1) to ensure the device has accepted the
command sequence, and then read I/O3. If I/O3 is "1", the
internally controlled erase cycle has begun; all further
commands (other than Erase Suspend) are ignored until
the erase operation is complete. If I/O3 is "0", the device
will accept additional sector erase commands. To ensure
the command has been accepted, the system software
should check the status of I/O3 prior to and following each
subsequent sector erase command. If I/O3 is high on the
second status check, the last command might not have
been accepted. Table 6 shows the outputs for I/O3.

No

Toggle Bit

= Toggle ?

Yes

I/O5 = 1?

Yes

Read I/O7 - I/O0

Twice

Toggle Bit

= Toggle ?

Yes

Program/Erase

Operation Not

Commplete, Write

Reset Command

No

(Notes 1,2)

No

Program/Erase

Operation Complete

Notes :

1. Read toggle bit twice to determine whether or not it is
toggling. See text.

2. Recheck toggle bit because it may stop toggling as I/O5
changes to "1". See text.

Figure 5. Toggle Bit Algorithm

PRELIMINARY (December, 2002, Version 0.2) 15 AMIC Technology, Corp.

A29400 Series

Table 6. Write Operation Status

Operation

I/O7 I/O6 I/O5 I/O3 I/O2

RY/BY

(Note 1) (Note 2) (Note 1)

Standard
Mode

Erase
Suspend
Mode

Embedded Program Algorithm

7I/O

Toggle 0 N/A No toggle 0

Embedded Erase Algorithm 0 Toggle 0 1 Toggle 0
Reading within Erase

Suspended Sector
Reading within Non-Erase

Suspend Sector
Erase-Suspend-Program

1 No toggle 0 N/A Toggle 1

Data Data Data Data Data 1

7I/O

Toggle 0 N/A N/A 0

Notes:

1. I/O7 and I/O2 require a valid address when reading status information. Refer to the appropriate subsection for further

details.

2. I/O5 switches to “1” when an Embedded Program or Embedded Erase operation has exceeded the maximum timing

limits. See “I/O5: Exceeded Timing Limits” for more information.

Maximum Negative Input Overshoot

20ns 20ns

+0.8V

-0.5V

-2.0V

Maximum Positive Input Overshoot

VCC+2.0V

VCC+0.5V

2.0V

20ns

20ns

20ns20ns

PRELIMINARY (December, 2002, Version 0.2) 16 AMIC Technology, Corp.

A29400 Series

DC Characteristics

TTL/NMOS Compatible

Parameter

Symbol

ILI Input Load Current

ILIT
ILO Output Leakage Current

ICC1

ICC2
ICC3

VIL Input Low Level

VIH Input High Level
VID

VOL Output Low Voltage

VOH Output High Voltage

CMOS Compatible

Parameter

Symbol

ILI Input Load Current

ILIT

ILO

ICC1

ICC2
ICC3 VCC Standby Current (Notes 2, 5)

VIL Input Low Level

VIH Input High Level
VID

VOL Output Low Voltage
VOH1
VOH2

Notes for DC characteristics (both tables):

1. The ICC current listed includes both the DC operation current and the frequency dependent component (at 6 MHz).
The frequency component typically is less than 2 mA/MHz, withOEat VIH.

2. Maximum ICC specifications are tested with VCC = VCC max.

3. ICC active while Embedded Algorithm (program or erase) is in progress.

4. Not 100% tested.

5. For CMOS mode only, ICC3 = 20µA max at extended temperatures (> +85°C).

Parameter Description

A9,OE&

VCC Active Read Current
(Notes 1, 2)
VCC Active Write (Program/Erase)
Current (Notes 2, 3, 4)
VCC Standby Current (Note 2)

Voltage for Autoselect and

Temporary Unprotect Sector

A9,OE&
Output Leakage Current

VCC Active Read Current
(Notes 1,2)

VCC Active Program/Erase Current
(Notes 2,3,4)

Voltage for Autoselect and
Temporary Sector Unprotect

Output High Voltage

RESET

Parameter Description

RESET

Input Load Current

Input Load Current

Test Description

VIN = VSS to VCC. VCC = VCC Max
VCC = VCC Max,
A9,OE&
VOUT = VSS to VCC. VCC = VCC Max

CE

CE
CE

VCC = 5.25 V
IOL = 12mA, VCC = VCC Min

IOH = -2.5 mA, VCC = VCC Min

VIN = VSS to VCC, VCC = VCC Max
VCC = VCC Max,
A9,OE&
VOUT = VSS to VCC, VCC = VCC Max

CE
CE

CE

VCC = 5.25 V 10.5 12.5 V

IOL = 12.0 mA, VCC = VCC Min
IOH = -2.5 mA, VCC = VCC Min
IOH = -100 µA. VCC = VCC Min

RESET

= VIL, OE = VIH

= VIL, OE =VIH
= VIH,

RESET

Test Description

RESET

= VIL, OE = VIH

= VIL, OE = VIH
=

RESET

=12.5V

= VCC ± 0.5V

= 12.5V

= VCC ± 0.5 V

Min.

-0.5

2.0

10.5

2.4

Min.

-0.5

0.7 x VCC

0.85 x VCC
VCC-0.4

Typ.

20 30 mA

30

0.4

VCC+0.5 V

Typ. Max. Unit

20

30

1

VCC+0.3 V

Max. Unit

±1.0 µA

100

±1.0

40 mA

1.0 mA

0.8

12.5

0.45

±1.0 µA

50

±1.0 µA

30

40 mA

5

0.8

0.45

µA

µA

V

V
V

V

µA

mA

µA

V

V
V
V

PRELIMINARY (December, 2002, Version 0.2) 17 AMIC Technology, Corp.

A29400 Series

AC Characteristics

Read Only Operations

Parameter Symbols Speed

JEDEC

tAVAV tRC

tAVQV tACC

tELQV tCE

tGLQV tOE

Std

Read Cycle Time (Note 2)
Address to Output Delay

Chip Enable to Output Delay
Output Enable to Output Delay

tOEH

tEHQZ tDF

Output Enable Hold
Time (Note 2)

Chip Enable to Output High Z
(Notes 1,2)

tGHQZ

tDF

Output Enable to Output High Z
(Notes 1,2)

tAXQX tOH

Output Hold Time from Addresses,

or OE, Whichever Occurs First

CE

Description Test Setup

Read
Toggle and

Polling

Data

CE

OE
OE

= VIL
= VIL

= VIL

Min.

Max.

Max.
Max.

Min.
Min.

Max.

Min.

-55

55
55

-70

70
70

55 70
30 30

0 0

10 10

18 20

18

20

0

0

Notes:

1. Output driver disable time.

2. Not 100% tested.

-90

90
90

90
35

0

10

20

20

0

Unit

ns
ns

ns

ns
ns

ns

ns

ns

ns

Timing Waveforms for Read Only Operation (

Addresses Addresses Stable

CE

OE

tOEH

WE

Output

RESET

0V

RY/BY

High-Z

RESET

tACC

tCE

=VIH on A29400)

tRC

tOE

Output Valid

tDF

tOH

High-Z

PRELIMINARY (December, 2002, Version 0.2) 18 AMIC Technology, Corp.

A29400 Series

AC Characteristics
Hardware Reset (

Parameter

JEDEC Std

Note: Not 100% tested.

RESET

tREADY

tREADY

tRP
tRH
tRB

Timings

RESET

RESET

Algorithms) to Read or Write (See Note)

RESET

Algorithms) to Read or Write (See Note)

RESET
RESET

RY/BY Recovery Time

RY/BY

CE, OE

RESET

)

Description Test Setup All Speed Options Unit

Pin Low (During Embedded

Pin Low (Not During Embedded

Pulse Width
High Time Before Read (See Note)

tRH

Max 20

Max 500 ns

Min 500 ns
Min 50 ns
Min 0 ns

µs

tRP

tReady

Reset Timings NOT during Embedded Algorithms

Reset Timings during Embedded Algorithms

tReady

RY/BY

CE, OE

RESET

tRP

~

~

~
~

~
~

tRB

PRELIMINARY (December, 2002, Version 0.2) 19 AMIC Technology, Corp.

A29400 Series

Temporary Sector Unprotect

Parameter

JEDEC Std

Note: Not 100% tested.

Temporary Sector Unprotect Timing Diagram

tVIDR VID Rise and Fall Time (See Note) Min 500 ns

Setup Time for Temporary Sector

RESET

CE

WE

RY/BY

tRSP

RESET

Unprotect

12V

0 or 5V

tVIDR tVIDR

Description All Speed Options Unit

Program or Erase Command Sequence

tRSP

~

~
~

~

~

~
~

~

Min 4

µs

0 or 5V

PRELIMINARY (December, 2002, Version 0.2) 20 AMIC Technology, Corp.

A29400 Series

BYTE

BYTE

BYTE

BYTE

BYTE

BYTE

AC Characteristics

Word/Byte Configuration (

Parameter

JEDEC Std

tELFL/tELFH

tFLQZ

tHQV

CE

Timings for Read Operations

CE

OE

BYTE

BYTE

Switching

from word to

byte mode

I/O0-I/O14

I/O15 (A-1)

BYTE

)

Description

to

Switching Low or High
Switching Low to Output High-Z
Switching High to Output Active

tELFL

tELFH

tFLQZ

All Speed Options

-55 -70 -90

Max 5 ns
Max 15 20 20 ns

Min 55 70 90 ns

Data Output

(I/O0-I/O14)

I/O15

Output

Data Output

(I/O0-I/O7)

Address Input

Unit

Data Output

(I/O0-I/O7)

BYTE

I/O0-I/O14

Switching

from byte to

word mode

I/O15 (A-1)

Address Input

tFHQV

Timings for Write Operations

CE

WE

BYTE

tSET

(tAS)

Note:

Refer to the Erase/Program Operations table for tAS and tAH specifications.

Data Output

(I/O0-I/O14)

I/O15

Output

The falling edge of the last WE signal

tHOLD(tAH)

PRELIMINARY (December, 2002, Version 0.2) 21 AMIC Technology, Corp.

A29400 Series

WE

AC Characteristics

Erase and Program Operations

Parameter Speed

JEDEC

tAVAV
tAVWL tAS
tWLAX tAH
tDVWH tDS
tWHDX tDH

tGHWL tGHWL

tELWL tCS
tWHEH

tWLWH tWP

tWHWL tWPH Write Pulse Width High

tWHWH1 tWHWH1

Std

tWC

tOES

tCH

Write Cycle Time (Note 1)
Address Setup Time

Address Hold Time

Data Setup Time
Data Hold Time
Output Enable Setup Time
Read Recover Time Before Write

(OE high to

Setup Time

CE

Hold Time

CE

Write Pulse Width

Byte Programming Operation

(Note 2)

Description

low)

-55

Min.
Min.
Min.
Min.
Min.
Min.

Min.

Min.
Min.
Min.
Min.
Max.

Byte Typ. 7

Word Typ. 12

55

45
25

30 35

-70

70

0
45
30

0

0

0

0

0

20
50

-90

90

45
45

45

Unit

ns
ns
ns
ns
ns
ns

ns

ns
ns
ns
ns

µs

µs

tWHWH2 tWHWH2 Sector Erase Operation (Note 2) Typ. 1 sec

Notes:

1. Not 100% tested.

2. See the "Erase and Programming Performance" section for more information.

tvcs

tRB

tBUSY

VCC Set Up Time (Note 1)

Recovery Time from RY/BY
Program/Erase Valid to RY/BY Delay

Min.

Min
Min

50

0

30 30 35

µs
ns
ns

PRELIMINARY (December, 2002, Version 0.2) 22 AMIC Technology, Corp.

A29400 Series

Timing Waveforms for Program Operation

Addresses

CE

OE

WE

Data

RY/BY

VCC

tVCS

Program Command Sequence (last two cycles)

tWC

555h

tGHWL

tCS

tCH

tWP

tDS

A0h PD

tAS

PA

tAH

tWPH

tDH

~

~

~

~

~

~

~

~

~

~

~

~

tBUSY

~

~

~

~

Read Status Data (last two cycles)

PA

tWHWH1

Status

PA

DOUT

tRB

Note :

1. PA = program addrss, PD = program data, Dout is the true data at the program address.

2. Illustration shows device in word mode.

PRELIMINARY (December, 2002, Version 0.2) 23 AMIC Technology, Corp.

A29400 Series

Timing Waveforms for Chip/Sector Erase Operation

Addresses

CE

OE

WE

Data

RY/BY

VCC

tVCS

Erase Command Sequence (last two cycles)

tWC

2AAh

tGHWL

tCH

tWP

tCS

tDS

55h 30h

tAS

SA

555h for chip erase

tWPH

tDH

10h for chip erase

tAH

~

~

~

~

~

~

~

~

~

~

~

~

tBUSY

~

~

~

~

tWHWH2

Read Status Data

VA

In

Progress

VA

Complete

tRB

Note :

1. SA = Sector Address (for Sector Erase), VA = Valid Address for reading status data (see "Write Operaion Ststus").

2. Illustratin shows device in word mode.

PRELIMINARY (December, 2002, Version 0.2) 24 AMIC Technology, Corp.

A29400 Series

Timing Waveforms for

Addresses

CE

tCH

OE

tOEH

WE

I/O7

I/O0 - I/O6

Polling (During Embedded Algorithms)

Data

tRC

tACC

tCE

tOE

tDF

tOH

Complement

Status Data

~

~

VAVA VA

~

~

~

~

~

~

~

~

Complement True

~

~

Status Data True

~

~

Valid Data

High-Z

High-Z

Valid Data

tBUSY

RY/BY

~

~

Note : VA = Valid Address. Illustation shows first status cycle after command sequence, last status read cycle, and array data
read cycle.

PRELIMINARY (December, 2002, Version 0.2) 25 AMIC Technology, Corp.

A29400 Series

Timing Waveforms for Toggle Bit (During Embedded Algorithms)

Addresses

CE

OE

WE

I/O6 , I/O2

RY/BY

tCH

tOEH

tBUSY

tACC

tCE

tRC

VAVA VA

tOE

tDF

tOH

Valid Status

(first read) (second read) (stop togging)

Valid Status Valid Status Valid Data

~

~

VA

~

~

~

~

~

~

~

~

~

~

~

~

Note: VA = Valid Address; not required for I/O6. Illustration shows first two status cycle after command sequence, last status

read cycle, and array data read cycle.

PRELIMINARY (December, 2002, Version 0.2) 26 AMIC Technology, Corp.

A29400 Series

WE

WE

Timing Waveforms for I/O2 vs. I/O6

Enter

Embedded

Erasing

WE

Erase

Erase

Suspend

~

~

~

~

Erase Suspend

Read

Enter Erase

Suspend Program

~

~

Erase
Suspend
Program

Resume

~

~

Erase Suspend

Read

Erase

~

Erase

~

Erase

Complete

I/O6

I/O2

Note : Both I/O6 and I/O2 toggle with OE or CE. See the text on I/O6 and I/O2 in the section "Write Operation Statue" for
more information.

~

~

~

~

I/O2 and I/O6 toggle with OE and CE

~

~

~

~

~

~

~

~

~

~

~

~

~

~

~

~

AC Characteristics

Erase and Program Operations

Alternate CE Controlled Writes

Parameter

JEDEC Std

tAVAV tWC Write Cycle Time (Note 1) Min. 55 70 90 ns
tAVEL tAS Address Setup Time Min. 0 ns

tELAX tAH Address Hold Time Min. 40 45 45 ns
tDVEH tDS Data Setup Time Min. 25 30 45 ns
tEHDX tDH Data Hold Time Min. 0 ns

tOES Output Enable Setup Time Min. 0 ns

tGHEL tGHEL

tWLEL tWS

tEHWH tWH

tELEH tCP

tEHEL tCPH

tWHWH1 tWHWH1

Read Recover Time Before Write
(OE High to WE Low)

Setup Time
Hold Time

Pulse Width

CE

Pulse Width High

CE

Programming Operation
(Note 2)

Description

-55 -70 -90

Min. 0 ns

Min. 0 ns
Min. 0 ns
Min. 30 35 45 ns

Min. 20 20 20 ns

Byte Typ. 7

Word Typ. 12

Speed

Unit

µs

tWHWH2 tWHWH2

Notes:

3. Not 100% tested.

4. See the "Erase and Programming Performance" section for more information.

PRELIMINARY (December, 2002, Version 0.2) 27 AMIC Technology, Corp.

Sector Erase Operation (Note 2) Typ. 1

sec

A29400 Series

Timing Waveforms for Alternate CE Controlled Write Operation (

PA for program
SA for sector erase
555 for chip erase

t

AS

t

WH

t

CP

t

CPH

t

DS

t

DH

t

AH

t

BUSY

PD for program
30 for sector erase
10 for chip erase

Data Polling

~

~

~

~

~

~

~

~

t

WHWH1 or 2

~

~

~

~

~

~

Addresses

WE

Data

RESET

OE

CE

t

RH

555 for program

2AA for erase

t

WC

t

GHEL

t

WS

A0 for program
55 for erase

RESET

PA

=VIH on A29400)

D

I/O

7

OUT

RY/BY

~

~

Note :

1. PA = Program Address, PD = Program Data, SA = Sector Address, I/O7 = Complement of Data Input, D

2. Figure indicates the last two bus cycles of the command sequence.

OUT

= Array Data.

Erase and Programming Performance

Parameter Typ. (Note 1) Max. (Note 2) Unit Comments

Sector Erase Time 1.0 8 sec
Chip Erase Time 11 sec
Byte Programming Time 35 300
Word Programming Time 12 500

3.6 10.8 sec Chip Programming Time

3.1 9.3 sec

(Note 3)

Byte Mode

Word Mode

µs
µs

Notes:

1. Typical program and erase times assume the following conditions: 25°C, 5.0V VCC, 10,000 cycles. Additionally,
programming typically assumes checkerboard pattern.

2. Under worst case conditions of 90°C, VCC = 4.5V (4.75V for -55), 100,000 cycles.

3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum byte program time listed. If the maximum byte program time given is exceeded, only
then does the device set I/O5 = 1. See the section on I/O5 for further information.

4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.

5. System-level overhead is the time required to execute the four-bus-cycle command sequence for programming. See
Table 4 for further information on command definitions.

6. The device has a guaranteed minimum erase and program cycle endurance of 10,000 cycles.

Excludes 00h programming

prior to erasure

Excludes system-level
overhead (Note 5)

PRELIMINARY (December, 2002, Version 0.2) 28 AMIC Technology, Corp.

A29400 Series

Latch-up Characteristics

Description Min. Max.

Input Voltage with respect to VSS on all I/O pins

-1.0V VCC+1.0V
VCC Current
Input voltage with respect to VSS on all pins except I/O pins

(including A9, OEand

Includes all pins except VCC. Test conditions: VCC = 5.0V, one pin at time.

RESET

)

TSOP and SOP Pin Capacitance

Parameter Symbol Parameter Description

CIN Input Capacitance

COUT

CIN2 Control Pin Capacitance

Notes:

1. Sampled, not 100% tested.

2. Test conditions TA = 25°C, f = 1.0MHz

Output Capacitance

Test Setup

VOUT=0

Data Retention

Parameter

Minimum Pattern Data Retention Time

Test Conditions

150°C
125°C

VIN=0

VIN=0

-100 mA

-1.0V

Typ.

6

8.5

7.5

Min

10
20 Years

+100 mA

12.5V

Max.

7.5 pF
12

9

Unit

Years

Unit

pF
pF

PRELIMINARY (December, 2002, Version 0.2) 29 AMIC Technology, Corp.

A29400 Series

Test Conditions

Test Specifications

Test Condition -55 All others Unit

Output Load 1 TTL gate
Output Load Capacitance, CL(including jig capacitance) 30 100 pF
Input Rise and Fall Times 5 20 ns
Input Pulse Levels 0.0 - 3.0 0.45 - 2.4 V
Input timing measurement reference levels 1.5 0.8, 2.0 V
Output timing measurement reference levels 1.5 0.8, 2.0 V

Test Setup

5.0 V

2.7 K

Ω

Device

Under

Test

CL

6.2 K

Ω

Diodes = IN3064 or Equivalent

PRELIMINARY (December, 2002, Version 0.2) 30 AMIC Technology, Corp.

A29400 Series

Ordering Information
Top Boot Sector Flash

Part No.

A29400TM-55 44Pin SOP

A29400TV-55

A29400TM-70 44Pin SOP

A29400TV-70

A29400TM-90 44Pin SOP

A29400TV-90

Access Time

(ns)

55 20 30 1

70 20 30 1

90 20 30 1

Active Read

Current

Typ. (mA)

Program/Erase

Current

Typ. (mA)

Standby Current

Typ. (µA)

Package

48Pin TSOP

48Pin TSOP

48Pin TSOP

Bottom Boot Sector Flash

Part No.

A29400UM-55 44Pin SOP

A29400UV-55

Access Time

(ns)

55 20 30 1

Active Read

Current

Typ. (mA)

Program/Erase

Current

Typ. (mA)

Standby Current

Typ. (µA)

Package

48Pin TSOP

A29400UM-70 44Pin SOP

70 20 30 1

A29400UV-70

A29400UM-90 44Pin SOP

90 20 30 1

A29400UV-90

48Pin TSOP

48Pin TSOP

PRELIMINARY (December, 2002, Version 0.2) 31 AMIC Technology, Corp.

A29400 Series

Package Information
SOP 44L Outline Dimensions unit: inches/mm

44

23

E

HE

Gauge Plane

θ

0.010"

1

22

b

L

Detail F

D

C

A

A2

S

Seating Plane

y

D

e

A1

See Detail F

L1

Symbol

A - - 0.118 - - 3.00
A1 0.004 - - 0.10 - ­A2 0.103 0.106 0.109 2.62 2.69 2.77

b 0.013 0.016 0.020 0.33 0.40 0.50
C 0.007 0.008 0.010 0.18 0.20 0.25
D - 1.122 1.130 - 28.50 28.70
E 0.490 0.496 0.500 12.45 12.60 12.70

e

HE 0.620 0.631 0.643 15.75 16.03 16.33

L 0.024 0.032 0.040 0.61 0.80 1.02

L1 - 0.0675 - - 1.71 -

S - - 0.045 - - 1.14

y - - 0.004 - - 0.10

θ 0°

Dimensions in inches Dimensions in mm

Min Nom Max Min Nom Max

- 0.050 - - 1.27 -

-

8° 0°

-

8°

Notes:

1. The maximum value of dimension D includes end flash.

2. Dimension E does not include resin fins.

3. Dimension S includes end flash.

PRELIMINARY (December, 2002, Version 0.2) 32 AMIC Technology, Corp.

A29400 Series

Package Information
TSOP 48L (Type I) Outline Dimensions unit: inches/mm

D

D1

1

24 25

Detail "A"

48

c

E

0.25

A

A1

A2

y
D

b

e

S

θ

L

Detail "A"

Symbol

A - - 0.047 - - 1.20

A1 0.002 - 0.006 0.05 - 0.15
A2 0.037 0.039 0.042 0.94 1.00 1.06

b 0.007 0.009 0.011 0.18 0.22 0.27

c 0.004 - 0.008 0.12 - 0.20
D 0.779 0.787 0.795 19.80 20.00 20.20

D1 0.720 0.724 0.728 18.30 18.40 18.50

E - 0.472 0.476 - 12.00 12.10

e 0.020 BASIC 0.50 BASIC

L 0.016 0.020 0.024 0.40 0.50 0.60
S 0.011 Typ. 0.28 Typ.

y - - 0.004 - - 0.10

θ

Dimensions in inches Dimensions in mm

Min Nom Max Min Nom Max

0° - 8° 0° - 8°

Notes:

1. The maximum value of dimension D includes end flash.

2. Dimension E does not include resin fins.

3. Dimension S includes end flash.

PRELIMINARY (December, 2002, Version 0.2) 33 AMIC Technology, Corp.