Datasheet A29010V, A29010V-70, A29010V-55, A29010L, A29010L-70 Datasheet (AMICC)

A29010 Series

128K X 8 Bit CMOS 5.0 Volt-only,

Preliminary Uniform Sector Flash Memory

Features

n 5.0V ± 10% for read and write operations
n Access times:

- 55/70/90 (max.)
n Current:

- 20 mA typical active read current

- 30 mA typical program/erase current

- 1 µA typical CMOS standby
n Flexible sector architecture

- 32 KbyteX4 sectors

- Any combination of sectors can be erased

- Supports full chip erase

- Sector protection:

A hardware method of protecting sectors to prevent
any inadvertent program or erase operations within
that sector

n Embedded Erase Algorithms

- Embedded Erase algorithm will automatically erase
the entire chip or any combination of designated
sectors and verify the erased sectors

General Description

The A29010 is a 5.0 volt-only Flash memory organized as
131,072 bytes of 8 bits each. The 128 Kbytes of data are
further divided into four sectors for flexible sector erase
capability. The 8 bits of data appear on I/O0 - I/O7 while the
addresses are input on A0 to A16. The A29010 is offered in
32-pin PLCC, TSOP, and PDIP packages. This device is
designed to be programmed in-system with the standard
system 5.0 volt VCC supply. Additional 12.0 volt VPP is not
required for in-system write or erase operations. However,
the A29010 can also be programmed in standard EPROM
programmers.
The A29010 has the first toggle bit, I/O6, which indicates
whether an Embedded Program or Erase is in progress, or it
is in the Erase Suspend. Besides the I/O6 toggle bit, the
A29010 has a second toggle bit, I/O2, to indicate whether the
addressed sector is being selected for erase. The A29010
also offers the ability to program in the Erase Suspend mode.
The standard A29010 offers access times of 55, 70 and 90
ns allowing high-speed microprocessors to operate without
wait states. To eliminate bus contention the device has

separate chip enable (CE), write enable (WE) and output
enable (OE) controls.

- Embedded Program algorithm automatically writes
and verifies bytes at specified addresses

n Typical 100,000 program/erase cycles per sector
n 20-year data retention at 125°C

- Reliable operation for the life of the system

n Compatible with JEDEC-standards

- Pinout and software compatible with single-power­supply Flash memory standard

- Superior inadvertent write protection

n

n Erase Suspend/Erase Resume

n Package options

The device requires only a single 5.0 volt power supply for
both read and write functions. Internally generated and
regulated voltages are provided for the program and erase
operations.

The A29010 is entirely software command set compatible
with the JEDEC single-power-supply Flash standard.
Commands are written to the command register using
standard microprocessor write timings. Register contents
serve as input to an internal state-machine that controls the
erase and programming circuitry. Write cycles also internally
latch addresses and data needed for the programming and
erase operations. Reading data out of the device is similar to
reading from other Flash or EPROM devices.
Device programming occurs by writing the proper program
command sequence. This initiates the Embedded Program
algorithm - an internal algorithm that automatically times the
program pulse widths and verifies proper program margin.
Device erasure occurs by executing the proper erase
command sequence. This initiates the Embedded Erase
algorithm - an internal algorithm that automatically
preprograms the array (if it is not already programmed)
before executing the erase operation. During erase, the
device automatically times the erase pulse widths and
verifies proper erase margin.

Polling and toggle bits

Data

- Provides a software method of detecting completion
of program or erase operations

- Suspends a sector erase operation to read data

from, or program data to, a non-erasing sector, then
resumes the erase operation

- 32-pin P-DIP, PLCC, or TSOP(Forward type)

PRELIMINARY (August, 2001, Version 0.3) 1 AMIC Technology, Inc.

A29010 Series

The host system can detect whether a program or erase
operation is complete by reading the I/O7 (

Polling) and

Data

I/O6 (toggle) status bits. After a program or erase cycle has
been completed, the device is ready to read array data or
accept another command.
The sector erase architecture allows memory sectors to be
erased and reprogrammed without affecting the data
contents of other sectors. The A29010 is fully erased when

sectors of memory. This can be achieved via programming
equipment.
The Erase Suspend feature enables the user to put erase on
hold for any period of time to read data from, or program data
to, any other sector that is not selected for erasure. True
background erase can thus be achieved.
Power consumption is greatly reduced when the device is
placed in the standby mode.

shipped from the factory.
The hardware sector protection feature disables operations
for both program and erase in any combination of the

Pin Configurations

n DIP n PLCC

NC
A16
A15

A12

A7
A6
A5
A4
A3
A2
A1

A0
I/O0
I/O1
I/O2

1
2

3
4
5
6
7
8
9
10
11
12
13
14
15
16 17

A29010

VCC

32

WE

31

NC

30

A14

29

A13

28

A8

27

A9

26

A11

25

OE

24

A10

23

CE

22

I/O7

21

I/O6

20

I/O5

19

I/O4

18

I/O3VSS

I/O0

5

A7

6

A6

7

A5

8

A4

9

A3

10

A2

11

A1

12

A0

13

n TSOP (Forward type)

1
2

A9

3

A8

4

A13

5

A14

6

NC

7

WE

8

VCC

NC
A16
A15
A12

A7
A6
A5
A4

9
10
11
12
13
14
15
16

A29010V

A12

A16NCVCCWENC

A15

432

1

323130

A29010L

14151617181920

I/O1

I/O2

I/O3

I/O4

VSS

I/O5

29
28
27
26
25
24
23
22
21

I/O6

A14
A13
A8
A9
A11
OE
A10
CE
I/O7

32

OEA11

31

A10

30

CE

29

I/O

28

I/O

27

I/O

26

I/O

25

I/O

24

VSS

23

I/O

22

I/O

21

I/O

20

A0

19

A1

18

A2

17 A3

7
6
5
4
3

2
1
0

PRELIMINARY (August, 2001, Version 0.3) 2 AMIC Technology, Inc.

A29010 Series

WE

Block Diagram

I/O0 - I/O7

VCC

VSS

A0-A16

WE

CE
OE

State

Control

Command

Register

VCC Detector

PGM Voltage

Generator

Timer

Erase Voltage

Generator

STB

Chip Enable

Output Enable

Logic

Y-Decoder

X-decoder

Address Latch

STB

Input/Output

Buffers

Data Latch

Y-Gating

Cell Matrix

Pin Descriptions

Pin No. Description

A0 - A16 Address Inputs

I/O0 - I/O7 Data Inputs/Outputs

CE

OE

Chip Enable
Write Enable
Output Enable

VSS Ground

VCC Power Supply

PRELIMINARY (August, 2001, Version 0.3) 3 AMIC Technology, Inc.

A29010 Series

CE

WE

Absolute Maximum Ratings*

Ambient Operating Temperature . . . . . -55°C to + 125°C

Storage Temperature . . . . . . . . . . . . . . -65°C to + 125°C

Ground to VCC . . . . . . . . . . . . . . . . . . . . . . -2.0V to 7.0V

Output Voltage (Note 1) . . . . . . . . . . . . . . . -2.0V to 7.0V

A9 &OE (Note 2) . . . . . . . . . . . . . . . . . . . -2.0V to 12.5V

All other pins (Note 1) . . . . . . . . . . . . . . . . . -2.0V to 7.0V

Output Short Circuit Current (Note 3) . . . . . . . . . . 200mA

Notes:

1. Minimum DC voltage on input or I/O pins is -0.5V.
During voltage transitions, inputs may undershoot VSS
to -2.0V for periods of up to 20ns. Maximum DC voltage
on output and I/O pins is VCC +0.5V. During voltage
transitions, outputs may overshoot to VCC +2.0V for
periods up to 20ns.

2. Minimum DC input voltage on A9 pins is -0.5V. During
voltage transitions, A9 andOE may overshoot VSS to -

2.0V for periods of up to 20ns. Maximum DC input
voltage on A9 and OE is +12.5V which may overshoot

to 13.5V for periods up to 20ns.

3. No more than one output is shorted at a time. Duration
of the short circuit should not be greater than one
second.

Device Bus Operations

This section describes the requirements and use of the
device bus operations, which are initiated through the
internal command register. The command register itself
does not occupy any addressable memory location. The
register is composed of latches that store the commands,
along with the address and data information needed to

*Comments

Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to this device.
These are stress ratings only. Functional operation of
this device at these or any other conditions above
those indicated in the operational sections of these
specification is not implied or intended. Exposure to
the absolute maximum rating conditions for extended
periods may affect device reliability.

Operating Ranges

Commercial (C) Devices

Ambient Temperature (TA) . . . . . . . . . . . . . . 0°C to +70°C

VCC Supply Voltages

VCC for ± 10% devices . . . . . . . . . . . . . . +4.5V to +5.5V

Operating ranges define those limits between which the
functionally of the device is guaranteed.

execute the command. The contents of the register serve
as inputs to the internal state machine. The state machine
outputs dictate the function of the device. The appropriate
device bus operations table lists the inputs and control
levels required, and the resulting output. The following
subsections describe each of these operations in further
detail.

Table 1. A29010 Device Bus Operations

Operation

Read L L H AIN DOUT
Write L H L AIN DIN
CMOS Standby
TTL Standby H X X X High-Z
Output Disable L H H X High-Z

Legend:
L = Logic Low = VIL, H = Logic High = VIH, VID = 12.0 ± 0.5V, X = Don't Care, DIN = Data In, DOUT = Data Out, AIN = Address In

PRELIMINARY (August, 2001, Version 0.3) 4 AMIC Technology, Inc.

VCC ± 0.5 V

OE

X X X High-Z

A0 – A16 I/O0 - I/O7

A29010 Series

Requirements for Reading Array Data

To read array data from the outputs, the system must drive
the CEand OE pins to VIL. CE is the power control and

selects the device. OE is the output control and gates
array data to the output pins. WE should remain at VIH all

the time during read operation. The internal state machine
is set for reading array data upon device power-up, or after
a hardware reset. This ensures that no spurious alteration
of the memory content occurs during the power transition.
No command is necessary in this mode to obtain array
data. Standard microprocessor read cycles that assert valid
addresses on the device address inputs produce valid data
on the device data outputs. The device remains enabled for
read access until the command register contents are
altered.
See "Reading Array Data" for more information. Refer to the
AC Read Operations table for timing specifications and to
the Read Operations Timings diagram for the timing
waveforms, lCC1 in the DC Characteristics table represents
the active current specification for reading array data.

Writing Commands/Command Sequences

To write a command or command sequence (which
includes programming data to the device and erasing

sectors of memory), the system must drive WE and CE to
VIL, and OE to VIH. An erase operation can erase one

sector, multiple sectors, or the entire device. The Sector
Address Tables indicate the address range that each sector
occupies. A "sector address" consists of the address inputs
required to uniquely select a sector. See the "Command
Definitions" section for details on erasing a sector or the
entire chip, or suspending/resuming the erase operation.
After the system writes the autoselect command sequence,
the device enters the autoselect mode. The system can
then read autoselect codes from the internal register (which
is separate from the memory array) on I/O7 - I/O0. Standard
read cycle timings apply in this mode. Refer to the

"Autoselect Mode" and "Autoselect Command Sequence"
sections for more information.
ICC2 in the Characteristics table represents the active
current specification for the write mode. The "AC
Characteristics" section contains timing specification tables
and timing diagrams for write operations.

Program and Erase Operation Status

During an erase or program operation, the system may
check the status of the operation by reading the status bits
on I/O7 - I/O0. Standard read cycle timings and ICC read
specifications apply. Refer to "Write Operation Status" for
more information, and to each AC Characteristics section
for timing diagrams.

Standby Mode

When the system is not reading or writing to the device, it
can place the device in the standby mode. In this mode,
current consumption is greatly reduced, and the outputs are

placed in the high impedance state, independent of the OE
input.

The device enters the CMOS standby mode when the CE
is held at VCC ± 0.5V. (Note that this is a more restricted

voltage range than VIH.) The device enters the TTL standby
mode when CE is held at VIH. The device requires the

standard access time (tCE) before it is ready to read data.
If the device is deselected during erasure or programming,
the device draws active current until the operation is
completed.
ICC3 in the DC Characteristics tables represents the standby
current specification.

Output Disable Mode

When the OE input is at VIH, output from the device is
disabled. The output pins are placed in the high impedance

state.

PRELIMINARY (August, 2001, Version 0.3) 5 AMIC Technology, Inc.

A29010 Series

WE

Table 2. A29010 Block Sector Address Table

Sector A16 A15 Sector Size (Kbytes) Address Range

SA0 0 0 32 00000h - 07FFFh
SA1 0 1 32 08000h - 0FFFFh
SA2 1 0 32 10000h - 17FFFh
SA3 1 1 32 18000h - 1FFFFh

Autoselect Mode

The autoselect mode provides manufacturer and device
identification, and sector protection verification, through
identifier codes output on I/O7 - I/O0. This mode is primarily
intended for programming equipment to automatically
match a device to be programmed with its corresponding
programming algorithm. However, the autoselect codes
can also be accessed in-system through the command
register.
When using programming equipment, the autoselect mode
requires VID (11.5V to 12.5 V) on address pinA9. Address
pins A6, A1, and A0 must be as shown in Autoselect

Codes (High Voltage Method) table. In addition, when
verifying sector protection, the sector address must appear
on the appropriate highest order address bits. Refer to the
corresponding Sector Address Tables. The Command
Definitions table shows the remaining address bits that are
don't care. When all necessary bits have been set as
required, the programming equipment may then read the
corresponding identifier code on I/O7 - I/O0.To access the
autoselect codes in-system, the host system can issue the
autoselect command via the command register, as shown
in the Command Definitions table. This method does not
require VID. See "Command Definitions" for details on
using the autoselect mode.

Table 3. A29010 Autoselect Codes (High Voltage Method)

Description A16 - A15

Manufacturer ID: AMIC X
Device ID: A29010 X X

Sector Protection
Verification

Continuation ID X X VID X VIL X VIH VIH 7Fh

Sector

Address

A14 - A10 A9

X VID

VID X

X

VID

A8 - A7

X

X

A5 - A2

A6

VIL
VIL X VIL

VIL X VIH VIL

X VIL VIL

A1

A0

VIH

Identifier Code on

I/O7 - I/O0

37h
A4h

0lh (protected)

00h (unprotected)

Note:

PRELIMINARY (August, 2001, Version 0.3) 6 AMIC Technology, Inc.

=VIL, OE=VIL and

CE

=VIH when Autoselect Mode

A29010 Series

WE

WE

WE

WE

WE

WE

Sector Protection/Unprotection

The hardware sector protection feature disables both
program and erase operations in any sector. The hardware
sector unprotection feature re-enables both program and
erase operations in previously protected sectors.
Sector protection/unprotection must be implemented using
programming equipment. The procedure requires a high
voltage (VID) on address pin A9 and the control pins.
The device is shipped with all sectors unprotected.
It is possible to determine whether a sector is protected or
unprotected. See "Autoselect Mode" for details.

Hardware Data Protection

The requirement of command unlocking sequence for
programming or erasing provides data protection against
inadvertent writes (refer to the Command Definitions table).
In addition, the following hardware data protection measures
prevent accidental erasure or programming, which might
otherwise be caused by spurious system level signals during
VCC power-up transitions, or from system noise. The device is
powered up to read array data to avoid accidentally writing
data to the array.

Write Pulse "Glitch" Protection

Noise pulses of less than 5ns (typical) on OE, CE or
do not initiate a write cycle.

Logical Inhibit

Write cycles are inhibited by holding any one of OE=VIL,

= VIH or

CE

must be a logical zero while OE is a logical one.

= VIH. To initiate a write cycle, CE and

Power-Up Write Inhibit

If

= CE = VIL and OE = VIH during power up, the

device does not accept commands on the rising edge of

. The internal state machine is automatically reset to

reading array data on the initial power-up.

Command Definitions

Writing specific address and data commands or sequences
into the command register initiates device operations. The
Command Definitions table defines the valid register
command sequences. Writing incorrect address and data
values or writing them in the improper sequence resets the
device to reading array data.

All addresses are latched on the falling edge of WE or CE,
whichever happens later. All data is latched on the rising

edge of
appropriate timing diagrams in the "AC Characteristics"

section.

or CE, whichever happens first. Refer to the

Reading Array Data

The device is automatically set to reading array data after
device power-up. No commands are required to retrieve
data. The device is also ready to read array data after
completing an Embedded Program or Embedded Erase
algorithm. After the device accepts an Erase Suspend
command, the device enters the Erase Suspend mode. The
system can read array data using the standard read timings,
except that if it reads at an address within erase-suspended
sectors, the device outputs status data. After completing a
programming operation in the Erase Suspend mode, the
system may once again read array data with the same
exception. See "Erase Suspend/Erase Resume Commands"
for more information on this mode.
The system must issue the reset command to re-enable the
device for reading array data if I/O5 goes high, or while in the
autoselect mode. See the "Reset Command" section, next.
See also "Requirements for Reading Array Data" in the
"Device Bus Operations" section for more information. The
Read Operations table provides the read parameters, and
Read Operation Timings diagram shows the timing diagram.

Reset Command

Writing the reset command to the device resets the device to
reading array data. Address bits are don't care for this
command. The reset command may be written between the
sequence cycles in an erase command sequence before
erasing begins. This resets the device to reading array data.
Once erasure begins, however, the device ignores reset
commands until the operation is complete.
The reset command may be written between the sequence
cycles in a program command sequence before
programming begins. This resets the device to reading array
data (also applies to programming in Erase Suspend mode).
Once programming begins, however, the device ignores
reset commands until the operation is complete.
The reset command may be written between the sequence
cycles in an autoselect command sequence. Once in the
autoselect mode, the reset command must be written to
return to reading array data (also applies to autoselect during
Erase Suspend).
If I/O5 goes high during a program or erase operation, writing
the reset command returns the device to reading array data
(also applies during Erase Suspend).

PRELIMINARY (August, 2001, Version 0.3) 7 AMIC Technology, Inc.

A29010 Series

Autoselect Command Sequence

The autoselect command sequence allows the host system
to access the manufacturer and devices codes, and
determine whether or not a sector is protected. The
Command Definitions table shows the address and data
requirements. This method is an alternative to that shown in
the Autoselect Codes (High Voltage Method) table, which is
intended for PROM programmers and requires VID on
address bit A9.
The autoselect command sequence is initiated by writing two
unlock cycles, followed by the autoselect command. The
device then enters the autoselect mode, and the system may
read at any address any number of times, without initiating
another command sequence.

Byte Program Command Sequence

Programming is a four-bus-cycle operation. The program
command sequence is initiated by writing two unlock write
cycles, followed by the program set-up command. The
program address and data are written next, which in turn
initiate the Embedded Program algorithm. The system is not
required to provide further controls or timings. The device
automatically provides internally generated program pulses
and verify the programmed cell margin. The Command
Definitions table shows the address and data requirements
for the byte program command sequence.
When the Embedded Program algorithm is complete, the
device then returns to reading array data and addresses are
no longer latched. The system can determine the status of
the program operation by using I/O7 or I/O6. See "Write
Operation Status" for information on these status bits.
Any commands written to the device during the Embedded
Program Algorithm are ignored. Programming is allowed in
any sequence and across sector boundaries. A bit cannot be
programmed from a "0" back to a "1 ". Attempting to do so
may halt the operation and set I/O5 to "1", or cause the

Polling algorithm to indicate the operation was

Data

successful. However, a succeeding read will show that the
data is still "0". Only erase operations can convert a "0" to a
"1".

START

Write Program

Command
Sequence

Embedded

Program

algorithm in

progress

Data Poll

from System

Verify Data ?

Yes

Increment Address

Last Address ?

Yes

Programming

Completed

Note : See the appropriate Command Definitions table for
program command sequence.

Figure 1. Program Operation

No

PRELIMINARY (August, 2001, Version 0.3) 8 AMIC Technology, Inc.

A29010 Series

WE

Chip Erase Command Sequence

Chip erase is a six-bus-cycle operation. The chip erase
command sequence is initiated by writing two unlock cycles,
followed by a set-up command. Two additional unlock write
cycles are then followed by the chip erase command, which
in turn invokes the Embedded Erase algorithm. The device
does not require the system to preprogram prior to erase.
The Embedded Erase algorithm automatically preprograms
and verifies the entire memory for an all zero data pattern
prior to electrical erase. The system is not required to provide
any controls or timings during these operations. The
Command Definitions table shows the address and data
requirements for the chip erase command sequence.
Any commands written to the chip during the Embedded
Erase algorithm are ignored. The system can determine the
status of the erase operation by using I/O7, I/O6, or I/O2. See
"Write Operation Status" for information on these status bits.
When the Embedded Erase algorithm is complete, the device
returns to reading array data and addresses are no longer
latched.
Figure 2 illustrates the algorithm for the erase operation. See
the Erase/Program Operations tables in "AC Characteristics"
for parameters, and to the Chip/Sector Erase Operation
Timings for timing waveforms.

Sector Erase Command Sequence

Sector erase is a six-bus-cycle operation. The sector erase
command sequence is initiated by writing two unlock cycles,
followed by a set-up command. Two additional unlock write
cycles are then followed by the address of the sector to be
erased, and the sector erase command. The Command
Definitions table shows the address and data requirements
for the sector erase command sequence.
The device does not require the system to preprogram the
memory prior to erase. The Embedded Erase algorithm
automatically programs and verifies the sector for an all zero
data pattern prior to electrical erase. The system is not
required to provide any controls or timings during these
operations.

After the command sequence is written, a sector erase time­out of 50µs begins. During the time-out period, additional
sector addresses and sector erase commands may be
written. Loading the sector erase buffer may be done in any
sequence, and the number of sectors may be from one
sector to all sectors. The time between these additional
cycles must be less than 50µs, otherwise the last address
and command might not be accepted, and erasure may
begin. It is recommended that processor interrupts be
disabled during this time to ensure all commands are
accepted. The interrupts can be re-enabled after the last
Sector Erase command is written. If the time between
additional sector erase commands can be assumed to be
less than 50µs, the system need not monitor I/O3. Any
command other than Sector Erase or Erase Suspend during
the time-out period resets the device to reading array data.
The system must rewrite the command sequence and any
additional sector addresses and commands.
The system can monitor I/O3 to determine if the sector erase
timer has timed out. (See the " I/O3: Sector Erase Timer"
section.) The time-out begins from the rising edge of the final

pulse in the command sequence.
Once the sector erase operation has begun, only the Erase
Suspend command is valid. All other commands are ignored.
When the Embedded Erase algorithm is complete, the device
returns to reading array data and addresses are no longer
latched. The system can determine the status of the erase
operation by using I/O7, I/O6, or I/O2. Refer to "Write
Operation Status" for information on these status bits.

PRELIMINARY (August, 2001, Version 0.3) 9 AMIC Technology, Inc.

A29010 Series

Figure 2 illustrates the algorithm for the erase operation.
Refer to the Erase/Program Operations tables in the "AC
Characteristics" section for parameters, and to the Sector
Erase Operations Timing diagram for timing waveforms.

Erase Suspend/Erase Resume Commands

The Erase Suspend command allows the system to interrupt
a sector erase operation and then read data from, or program
data to, any sector not selected for erasure. This command is
valid only during the sector erase operation, including the
50µs time-out period during the sector erase command
sequence. The Erase Suspend command is ignored if written
during the chip erase operation or Embedded Program
algorithm. Writing the Erase Suspend command during the
Sector Erase time-out immediately terminates the time-out
period and suspends the erase operation. Addresses are
"don't cares" when writing the Erase Suspend command.
When the Erase Suspend command is written during a
sector erase operation, the device requires a maximum of
20µs to suspend the erase operation. However, when the
Erase Suspend command is written during the sector erase
time-out, the device immediately terminates the time-out
period and suspends the erase operation.
After the erase operation has been suspended, the system
can read array data from or program data to any sector not
selected for erasure. (The device "erase suspends" all
sectors selected for erasure.) Normal read and write timings
and command definitions apply. Reading at any address
within erase-suspended sectors produces status data on I/O7

- I/O0. The system can use I/O7, or I/O6 and I/O2 together, to
determine if a sector is actively erasing or is erase­suspended. See "Write Operation Status" for information on
these status bits.
After an erase-suspended program operation is complete,
the system can once again read array data within non­suspended sectors. The system can determine the status of
the program operation using the I/O7 or I/O6 status bits, just
as in the standard program operation. See "Write Operation
Status" for more information.
The system may also write the autoselect command
sequence when the device is in the Erase Suspend mode.
The device allows reading autoselect codes even at
addresses within erasing sectors, since the codes are not
stored in the memory array. When the device exits the
autoselect mode, the device reverts to the Erase Suspend
mode, and is ready for another valid operation. See
"Autoselect Command Sequence" for more information.
The system must write the Erase Resume command
(address bits are "don't care") to exit the erase suspend
mode and continue the sector erase operation. Further writes
of the Resume command are ignored. Another Erase
Suspend command can be written after the device has
resumed erasing.

START

Write Erase

Command
Sequence

Data Poll

from System

No

Data = FFh ?

Yes

Erasure Completed

Note :

1. See the appropriate Command Definitions table for erase
command sequences.

2. See "I/O3 : Sector Erase Timer" for more information.

Figure 2. Erase Operation

Embedded
Erase
algorithm in
progress

PRELIMINARY (August, 2001, Version 0.3) 10 AMIC Technology, Inc.

A29010 Series

WE

Table 4. A29010 Command Definitions

Command
Sequence

(Note 1)

Read (Note 5)
Reset (Note 6)

Autoselect

(Note 7)

Program

Manufacturer ID
Device ID 4 555 AA 2AA 55 555 90 X01 A4

Continuation ID 4 555 AA 2AA 55 555 90 X03

Sector Protect Verify
(Note 8)

First

Addr Data

Cycles

1 RA RD
1 XXX
4

4

4

F0

555 AA 2AA

555 AA

AA

555

Second

Addr

Data Addr

2AA

2AA

Bus Cycles (Notes 2 - 4)

Third

Data

Addr

55

55 555 90

55 555 A0 PA

555

90 X00

SA

X02

Fourth

Data

37

7F
00
01

PD

Fifth

Addr Data Addr

Sixth

Data

Chip Erase 6
Sector Erase
Erase Suspend (Note 9)
Erase Resume (Note 10)

Legend:
X = Don't care
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation.

PA = Address of the memory location to be programmed. Addresses latch on the falling edge of the

whichever happens later.

PD = Data to be programmed at location PA. Data latches on the rising edge of WE or CE pulse, whichever happens first.
SA = Address of the sector to be verified (in autoselect mode) or erased. Address bits A16 - A15 select a unique sector.

Note:

1. See Table 1 for description of bus operations.

2. All values are in hexadecimal.

3. Except when reading array or autoselect data, all bus cycles are write operation.

4. Address bits A16 - A12 are don't cares for unlock and command cycles, unless SA or PA required.

5. No unlock or command cycles required when reading array data.

6. The Reset command is required to return to reading array data when device is in the autoselect mode, or if I/O5 goes high
(while the device is providing status data).

7. The fourth cycle of the autoselect command sequence is a read cycle.

8. The data is 00h for an unprotected sector and 01h for a protected sector. See "Autoselect Command Sequence" for more
information.

9. The system may read and program in non-erasing sectors, or enter the autoselect mode, when in the Erase Suspend
mode.

10. The Erase Resume command is valid only during the Erase Suspend mode.

555 AA 2AA
6 555 AA
1 XXX
1 XXX

B0
30

55

2AA

55 555 80

555 80

555 AA 2AA

555

AA

2AA

55 555 10

SA

55

or CE pulse,

30

11. The time between each command cycle has to be less than 50µs.

PRELIMINARY (August, 2001, Version 0.3) 11 AMIC Technology, Inc.

A29010 Series

WE

Write Operation Status

Several bits, I/O2, I/O3, I/O5, I/O6, and I/O7, are provided in
the A29010 to determine the status of a write operation.
Table 5 and the following subsections describe the
functions of these status bits. I/O7, I/O6 and I/O2 each offer
a method for determining whether a program or erase
operation is complete or in progress. These three bits are
discussed first.

I/O7:

Data

Polling

START

Read I/O7-I/O0

Address = VA

The

Polling bit, I/O7, indicates to the host system

Data

whether an Embedded Algorithm is in progress or
completed, or whether the device is in Erase Suspend.

Polling is valid after the rising edge of the final

Data

pulse in the program or erase command sequence.
During the Embedded Program algorithm, the device
outputs on I/O7 the complement of the datum programmed
to I/O7. This I/O7 status also applies to programming during
Erase Suspend. When the Embedded Program algorithm
is complete, the device outputs the datum programmed to
I/O7. The system must provide the program address to
read valid status information on I/O7. If a program address

falls within a protected sector,

Polling on I/O7 is

Data

active for approximately 2µs, then the device returns to
reading array data.

During the Embedded Erase algorithm,

Data

Polling

produces a "0" on I/O7. When the Embedded Erase
algorithm is complete, or if the device enters the Erase

Suspend mode,

Polling produces a "1" on I/O7.This

Data

is analogous to the complement/true datum output
described for the Embedded Program algorithm: the erase
function changes all the bits in a sector to "1"; prior to this,
the device outputs the "complement," or "0." The system
must provide an address within any of the sectors selected
for erasure to read valid status information on I/O7.
After an erase command sequence is written, if all sectors

selected for erasing are protected,

Polling on I/O7 is

Data

active for approximately 100µs, then the device returns to
reading array data. If not all selected sectors are protected,
the Embedded Erase algorithm erases the unprotected
sectors, and ignores the selected sectors that are
protected.
When the system detects I/O7 has changed from the
complement to true data, it can read valid data at I/O7 - I/O0
on the following read cycles. This is because I/O7 may
change asynchronously with I/O0 - I/O6 while Output Enable

(OE) is asserted low. The

Polling Timings (During

Data

Embedded Algorithms) figure in the "AC Characteristics"
section illustrates this. Table 5 shows the outputs for

Polling on I/O7. Figure 3 shows the

Polling algorithm.

Data

Data

Yes

I/O7 = Data ?

No

No

Note :

1. VA = Valid address for programming. During a sector
erase operation, a valid address is an address within any
sector selected for erasure. During chip erase, a valid
address is any non-protected sector address.

2. I/O7 should be rechecked even if I/O5 = "1" because
I/O7 may change simultaneously with I/O5.

I/O5 = 1?

Yes

Read I/O7 - I/O0

Address = VA

I/O7 = Data ?

No

FAIL

Yes

PASS

Figure 3. Data Polling Algorithm

PRELIMINARY (August, 2001, Version 0.3) 12 AMIC Technology, Inc.

A29010 Series

WE

WE

I/O6: Toggle Bit I

Toggle Bit I on I/O6 indicates whether an Embedded
Program or Erase algorithm is in progress or complete, or
whether the device has entered the Erase Suspend mode.
Toggle Bit I may be read at any address, and is valid after

the rising edge of the final
sequence (prior to the program or erase operation), and
during the sector erase time-out.
During an Embedded Program or Erase algorithm
operation, successive read cycles to any address cause

I/O6 to toggle. (The system may use either OE or CE to
control the read cycles.) When the operation is complete,

I/O6 stops toggling.
After an erase command sequence is written, if all sectors
selected for erasing are protected, I/O6 toggles for
approximately 100µs, then returns to reading array data. If
not all selected sectors are protected, the Embedded
Erase algorithm erases the unprotected sectors, and
ignores the selected sectors that are protected.
The system can use I/O6 and I/O2 together to determine
whether a sector is actively erasing or is erase-suspended.
When the device is actively erasing (that is, the Embedded
Erase algorithm is in progress), I/O6 toggles. When the
device enters the Erase Suspend mode, I/O6 stops
toggling. However, the system must also use I/O2 to
determine which sectors are erasing or erase-suspended.
Alternatively, the system can use I/O7 (see the subsection

on " I/O7 :
If a program address falls within a protected sector, I/O6
toggles for approximately 2µs after the program command

sequence is written, then returns to reading array data.
I/O6 also toggles during the erase-suspend-program mode,
and stops toggling once the Embedded Program algorithm
is complete.
The Write Operation Status table shows the outputs for
Toggle Bit I on I/O6. Refer to Figure 4 for the toggle bit
algorithm, and to the Toggle Bit Timings figure in the "AC
Characteristics" section for the timing diagram. The I/O2 vs.
I/O6 figure shows the differences between I/O2 and I/O6 in
graphical form. See also the subsection on " I/O2: Toggle
Bit II".

Data

Polling").

pulse in the command

I/O2: Toggle Bit II

The "Toggle Bit II" on I/O2, when used with I/O6, indicates
whether a particular sector is actively erasing (that is, the
Embedded Erase algorithm is in progress), or whether that
sector is erase-suspended. Toggle Bit II is valid after the

rising edge of the final
sequence.
I/O2 toggles when the system reads at addresses within
those sectors that have been selected for erasure. (The

system may use either
cycles.) But I/O2 cannot distinguish whether the sector is

actively erasing or is erase-suspended. I/O6, by
comparison, indicates whether the device is actively
erasing, or is in Erase Suspend, but cannot distinguish
which sectors are selected for erasure. Thus, both status

pulse in the command

or CE to control the read

OE

bits are required for sector and mode information. Refer to
Table 6 to compare outputs for I/O2 and I/O6.
Figure 4 shows the toggle bit algorithm in flowchart form,
and the section " I/O2: Toggle Bit II" explains the algorithm.
See also the " I/O6: Toggle Bit I" subsection. Refer to the
Toggle Bit Timings figure for the toggle bit timing diagram.
The I/O2 vs. I/O6 figure shows the differences between I/O2
and I/O6 in graphical form.

Reading Toggle Bits I/O6, I/O2

Refer to Figure 4 for the following discussion. Whenever
the system initially begins reading toggle bit status, it must
read I/O7 - I/O0 at least twice in a row to determine whether
a toggle bit is toggling. Typically, a system would note and
store the value of the toggle bit after the first read. After the
second read, the system would compare the new value of
the toggle bit with the first. If the toggle bit is not toggling,
the device has completed the program or erase operation.
The system can read array data on I/O7 - I/O0 on the
following read cycle.
However, if after the initial two read cycles, the system
determines that the toggle bit is still toggling, the system
also should note whether the value of I/O5 is high (see the
section on I/O5). If it is, the system should then determine
again whether the toggle bit is toggling, since the toggle bit
may have stopped toggling just as I/O5 went high. If the
toggle bit is no longer toggling, the device has successfully
completed the program or erase operation. If it is still
toggling, the device did not complete the operation
successfully, and the system must write the reset
command to return to reading array data.
The remaining scenario is that the system initially
determines that the toggle bit is toggling and I/O5 has not
gone high. The system may continue to monitor the toggle
bit and I/O5 through successive read cycles, determining
the status as described in the previous paragraph.
Alternatively, it may choose to perform other system tasks.
In this case, the system must start at the beginning of the
algorithm when it returns to determine the status of the
operation (top of Figure 4).

I/O5: Exceeded Timing Limits

I/O5 indicates whether the program or erase time has
exceeded a specified internal pulse count limit. Under
these conditions I/O5 produces a "1." This is a failure
condition that indicates the program or erase cycle was not
successfully completed.
The I/O5 failure condition may appear if the system tries to
program a "1 "to a location that is previously programmed
to "0." Only an erase operation can change a "0" back to a
"1." Under this condition, the device halts the operation,
and when the operation has exceeded the timing limits,
I/O5 produces a "1."
Under both these conditions, the system must issue the
reset command to return the device to reading array data.

PRELIMINARY (August, 2001, Version 0.3) 13 AMIC Technology, Inc.

A29010 Series

I/O3: Sector Erase Timer

After writing a sector erase command sequence, the
system may read I/O3 to determine whether or not an
erase operation has begun. (The sector erase timer does
not apply to the chip erase command.) If additional
sectors are selected for erasure, the entire time-out also
applies after each additional sector erase command.
When the time-out is complete, I/O3 switches from "0" to
"1." The system may ignore I/O3 if the system can
guarantee that the time between additional sector erase
commands will always be less than 50µs. See also the
"Sector Erase Command Sequence" section.
After the sector erase command sequence is written, the

system should read the status on I/O7 (

Data

Polling) or

I/O6 (Toggle Bit 1) to ensure the device has accepted the
command sequence, and then read I/O3. If I/O3 is "1", the
internally controlled erase cycle has begun; all further
commands (other than Erase Suspend) are ignored until
the erase operation is complete. If I/O3 is "0", the device
will accept additional sector erase commands. To ensure
the command has been accepted, the system software
should check the status of I/O3 prior to and following each
subsequent sector erase command. If I/O3 is high on the
second status check, the last command might not have
been accepted. Table 5 shows the outputs for I/O3.

No

START

Read I/O7-I/O0

Read I/O7-I/O0

Toggle Bit

= Toggle ?

Yes

I/O5 = 1?

(Note 1)

No

Yes

Read I/O7 - I/O0

Twice

Toggle Bit

= Toggle ?

Yes

Program/Erase

Operation Not

Commplete, Write

Reset Command

Notes :

1. Read toggle bit twice to determine whether or not it is
toggling. See text.

2. Recheck toggle bit because it may stop toggling as I/O5
changes to "1". See text.

(Notes 1,2)

No

Program/Erase

Operation Complete

Figure 4. Toggle Bit Algorithm

PRELIMINARY (August, 2001, Version 0.3) 14 AMIC Technology, Inc.

A29010 Series

Table 5. Write Operation Status

Operation

I/O7 I/O6 I/O5 I/O3 I/O2

(Note 1) (Note 2) (Note 1)

Standard
Mode

Erase
Suspend
Mode

Embedded Program Algorithm

7I/O

Toggle 0 N/A No toggle

Embedded Erase Algorithm 0 Toggle 0 1 Toggle
Reading within Erase

Suspended Sector
Reading within Non-Erase

Suspend Sector
Erase-Suspend-Program

1 No toggle 0 N/A Toggle

Data Data Data Data Data

7I/O

Toggle 0 N/A N/A

Notes:

1. I/O7 and I/O2 require a valid address when reading status information. Refer to the appropriate subsection for further
details.

2. I/O5 switches to “1” when an Embedded Program or Embedded Erase operation has exceeded the maximum timing

limits. See “I/O5: Exceeded Timing Limits” for more information.

Maximum Negative Input Overshoot

20ns 20ns

+0.8V

-0.5V

-2.0V

Maximum Positive Input Overshoot

VCC+2.0V

VCC+0.5V

2.0V

20ns

20ns

20ns20ns

PRELIMINARY (August, 2001, Version 0.3) 15 AMIC Technology, Inc.

A29010 Series

DC Characteristics

TTL/NMOS Compatible

Parameter

Symbol

ILI Input Load Current

ILIT
ILO Output Leakage Current

ICC1

ICC2
ICC3

VIL Input Low Level

VIH Input High Level
VID

VOL Output Low Voltage

VOH Output High Voltage

CMOS Compatible

Parameter

Symbol

ILI Input Load Current

ILIT
ILO

ICC1

ICC2
ICC3 VCC Standby Current (Notes 2, 5)

VIL Input Low Level

VIH Input High Level
VID

VOL Output Low Voltage
VOH1
VOH2

Notes for DC characteristics (both tables):

1. The ICC current listed includes both the DC operation current and the frequency dependent component (at 6 MHz).
The frequency component typically is less than 2 mA/MHz, withOEat VIH.

2. Maximum ICC specifications are tested with VCC = VCC max.

3. ICC active while Embedded Algorithm (program or erase) is in progress.

4. Not 100% tested.

5. For CMOS mode only, ICC3 = 20µA max at extended temperatures (> +85°C).

Parameter Description

VIN = VSS to VCC. VCC = VCC Max

A9 &OE Input Load Current

VCC Active Read Current
(Notes 1, 2)
VCC Active Write (Program/Erase)
Current (Notes 2, 3, 4)
VCC Standby Current (Note 2)

Voltage for Autoselect

Parameter Description

A9 & OE Input Load Current
Output Leakage Current

VCC Active Read Current
(Notes 1,2)

VCC Active Program/Erase Current
(Notes 2,3,4)

VCC = VCC Max,
A9 & OE = 12.5V
VOUT = VSS to VCC. VCC = VCC Max

CE
CE

CE

VCC = 5.25 V
IOL = 12mA, VCC = VCC Min
IOH = -2.5 mA, VCC = VCC Min

VIN = VSS to VCC, VCC = VCC Max
VCC = VCC Max,
A9 & OE = 12.5V
VOUT = VSS to VCC, VCC = VCC Max

CE
CE

CE

Voltage for Autoselect VCC = 5.25 V 10.5 12.5 V

IOL = 12.0 mA, VCC = VCC Min

Output High Voltage

IOH = -2.5 mA, VCC = VCC Min
IOH = -100 µA. VCC = VCC Min

Test Description

= VIL, OE = VIH

= VIL, OE =VIH
= VIH

Test Description

= VIL, OE = VIH

= VIL, OE = VIH

= VCC ± 0.5 V

Min.

-0.5

2.0

10.5

2.4

Min.

-0.5

0.7 x VCC

0.85 x VCC
VCC-0.4

Typ.

20 30 mA

30

0.4

VCC+0.5 V

Typ. Max. Unit

20

30

1

VCC+0.3 V

Max. Unit

±1.0 µA

100

±1.0

40 mA

1.0 mA

0.8

12.5

0.45

±1.0 µA

100

±1.0 µA

30

40 mA

0.8

0.45

µA

µA

µA

mA

5

µA

V

V
V
V

V

V
V
V

PRELIMINARY (August, 2001, Version 0.3) 16 AMIC Technology, Inc.

A29010 Series

Output Hold Time from Addresses,

AC Characteristics

Read Only Operations

Parameter Symbols

JEDEC

tAVAV tRC
tAVQV tACC

tELQV tCE
tGLQV tOE

Std

Read Cycle Time (Note 2)

Address to Output Delay

Chip Enable to Output Delay
Output Enable to Output Delay

tOEH

tEHQZ tDF

Output Enable Hold
Time (Note 2)

Chip Enable to Output High Z
(Notes 1,2)

tGHQZ

tDF

Output Enable to Output High Z

(Notes 1,2)

tAXQX tOH

CE

Notes:

1. Output driver disable time.

2. Not 100% tested.

Description Test Setup

Read
Toggle and

Polling

Data

or OE, Whichever Occurs First

= VIL

CE

= VIL

OE

= VIL

OE

Min.

Max.

Max.
Max.

Min.
Min.

Max.

Min.

Speed

-55

55
55

-70

70
70

55 70
30 30

0 0

10 10

18 20

18

20

0

Unit

-90

90
90

90
35

0

10

20

20

0

0

ns
ns

ns
ns
ns

ns

ns

ns

ns

Timing Waveforms for Read Only Operation

Addresses Addresses Stable

CE

tACC

OE

WE

tOEH

tCE

Output

High-Z

0V

tRC

tOE

Output Valid

tDF

tOH

High-Z

PRELIMINARY (August, 2001, Version 0.3) 17 AMIC Technology, Inc.

A29010 Series

AC Characteristics

Erase and Program Operations

Parameter

Symbols

JEDEC

tAVAV
tAVWL tAS
tWLAX tAH
tDVWH tDS
tWHDX tDH

tGHWL tGHWL

tELWL tCS
tWHEH
tWLWH tWP

tWHWL tWPH Write Pulse Width High

tWHWH1 tWHWH1

Std

tWC

tOES

tCH

Write Cycle Time (Note 1)
Address Setup Time

Address Hold Time

Data Setup Time
Data Hold Time
Output Enable Setup Time
Read Recover Time Before Write

(OE high to WE low)

Setup Time

CE

Hold Time

CE

Write Pulse Width

Byte Programming Operation
(Note 2)

Description

Min.
Min.
Min.
Min.
Min.
Min.

Min.

Min.
Min.
Min.
Min.

Max.

Typ.

Speed

-55

55

40
25

30 35

-70

70

45
30

20
50

Unit

-90

90

0

45

45
0
0

0

0
0

45

7

ns
ns
ns
ns
ns
ns

ns

ns
ns
ns
ns

µs
µs

tWHWH2 tWHWH2

Notes:

1. Not 100% tested.

2. See the "Erase and Programming Performance" section for more information.

tVCS

Sector Erase Operation
(Note 2)

VCC Set Up Time (Note 1) Min. 50

Typ.

1

sec

µs

PRELIMINARY (August, 2001, Version 0.3) 18 AMIC Technology, Inc.

A29010 Series

Timing Waveforms for Program Operation

Addresses

CE

OE

WE

Data

tVCS

VCC

Note : PA = program addrss, PD = program data, Dout is the true data at the program address.

Program Command Sequence (last two cycles)

tWC

555h

tGHWL

tCS

tCH

tWP

tDS

A0h PD

tAS

PA

tAH

tWPH

tDH

Read Status Data (last two cycles)

~

~

PA

~

~

~

~

~

~

tWHWH1

~

~

~

~

~

~

Status

PA

DOUT

PRELIMINARY (August, 2001, Version 0.3) 19 AMIC Technology, Inc.

A29010 Series

Timing Waveforms for Chip/Sector Erase Operation

Addresses

CE

OE

WE

Data

VCC

tVCS

Erase Command Sequence (last two cycles)

tWC

2AAh

tGHWL

tCH

tWP

tCS

tDS

55h 30h

tAS

SA

555h for chip erase

tWPH

tDH

10h for chip erase

tAH

~

~

~

~

~

~

~

~

~

~

~

~

~

~

tWHWH2

Read Status Data

VA

In

Progress

VA

Complete

Note : SA = Sector Address. VA = Valid Address for reading status data.

PRELIMINARY (August, 2001, Version 0.3) 20 AMIC Technology, Inc.

A29010 Series

Timing Waveforms for

Addresses

CE

tCH

OE

tOEH

WE

I/O7

I/O0 - I/O6

Polling (During Embedded Algorithms)

Data

tRC

tACC

tCE

tOE

tDF

tOH

Complement

Status Data

~

~

VAVA VA

~

~

~

~

~

~

~

~

Complement True

~

~

Status Data True

~

~

Valid Data

High-Z

High-Z

Valid Data

Note : VA = Valid Address. Illustation shows first status cycle after command sequence, last status read cycle, and array data
read cycle.

PRELIMINARY (August, 2001, Version 0.3) 21 AMIC Technology, Inc.

A29010 Series

Timing Waveforms for Toggle Bit (During Embedded Algorithms)

Addresses

CE

OE

WE

I/O6 , I/O2

tCH

tOEH

tACC

tCE

tRC

VAVA VA

tOE

tDF

tOH

Valid Status

(first read) (second read) (stop togging)

Valid Status Valid Status Valid Status

~

~

VA

~

~

~

~

~

~

~

~

~

~

Note: VA = Valid Address; not required for I/O6. Illustration shows first two status cycle after command sequence, last status

read cycle, and array data read cycle.

PRELIMINARY (August, 2001, Version 0.3) 22 AMIC Technology, Inc.

A29010 Series

WE

WE

Timing Waveforms for I/O2 vs. I/O6

Enter

Embedded

Erasing

WE

Erase

Erase

Suspend

~

~

~

~

Erase Suspend

Read

Enter Erase

Suspend Program

~

~

Erase
Suspend
Program

Resume

~

~

Erase Suspend

Read

Erase

Erase

~

~

Erase

Complete

I/O6

I/O2

Note : Both I/O6 and I/O2 toggle with OE or CE. See the text on I/O6 and I/O2 in the section "Write Operation Statue" for
more information.

~

~

~

~

I/O2 and I/O6 toggle with OE and CE

~

~

~

~

~

~

~

~

~

~

~

~

~

~

~

~

AC Characteristics

Erase and Program Operations

Alternate CE Controlled Writes

Parameter Symbols Speed
JEDEC Std

tAVAV tWC Write Cycle Time (Note 1) Min. 55 70 90 ns
tAVEL tAS Address Setup Time Min. 0 ns
tELAX tAH Address Hold Time Min. 40 45 45 ns
tDVEH tDS Data Setup Time Min. 25 30 45 ns
tEHDX tDH Data Hold Time Min. 0 ns
tGHEL tGHEL Read Recover Time Before Write Min. 0 ns

tWLEL tWS
tEHWH tWH

tELEH tCP Write Pulse Width Min. 30 35 45 ns

tEHEL tCPH Write Pulse Width High Min. 20 20 20 ns
tWHWH1 tWHWH1 Byte Programming Operation (Note 2) Typ. 7
tWHWH2 tWHWH2 Sector Erase Operation (Note 2) Typ. 1 sec

Setup Time
Hold Time

Description

-55 -70 -90

Min. 0 ns
Min. 0 ns

Unit

µs

Notes:

3. Not 100% tested.

4. See the "Erase and Programming Performance" section for more information.

PRELIMINARY (August, 2001, Version 0.3) 23 AMIC Technology, Inc.

A29010 Series

Timing Waveforms for Alternate CE Controlled Write Operation

PA for program

555 for program

2AA for erase

Addresses

WE

SA for sector erase
555 for chip erase

tAStWC

tWH

tAH

Data Polling

~

~

~

~

~

~

PA

tGHEL

OE

tCP

CE

tWS

Data

tRH

A0 for program
55 for erase

Note :

1. PA = Program Address, PD = Program Data, SA = Sector Address, I/O7 = Complement of Data Input, DOUT = Array Data.

2. Figure indicates the last two bus cycles of the command sequence.

tCPH

tDS

tDH

PD for program
30 for sector erase
10 for chip erase

tBUSY

~

~

tWHWH1 or 2

~

~

~

~

I/O7

DOUT

Erase and Programming Performance

Parameter Typ. (Note 1) Max. (Note 2) Unit Comments

Sector Erase Time 1 8 sec
Chip Erase Time 8 64 sec
Byte Programming Time 35 300
Chip Programming Time (Note 3) 3.6 10.8 sec

Notes:

1. Typical program and erase times assume the following conditions: 25°C, 5.0V VCC, 100,000 cycles. Additionally,
programming typically assumes checkerboard pattern.

2. Under worst case conditions of 90°C, VCC = 4.5V (4.75V for -55), 100,000 cycles.

3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum byte program time listed. If the maximum byte program time given is exceeded, only
then does the device set I/O5 = 1. See the section on I/O5 for further information.

4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.

5. System-level overhead is the time required to execute the four-bus-cycle command sequence for programming. See
Table 4 for further information on command definitions.

6. The device has a guaranteed minimum erase and program cycle endurance of 100,000 cycles.

µs

Excludes 00h programming
prior to erasure (Note 4)

Excludes system-level
overhead (Note 5)

PRELIMINARY (August, 2001, Version 0.3) 24 AMIC Technology, Inc.

A29010 Series

Latch-up Characteristics

Description Min. Max.

Input Voltage with respect to VSS on all I/O pins

-1.0V VCC+1.0V
VCC Current
Input voltage with respect to VSS on all pins except I/O pins

(including A9 and OE)

Includes all pins except VCC. Test conditions: VCC = 5.0V, one pin at time.

TSOP Pin Capacitance

Parameter Symbol Parameter Description

CIN Input Capacitance

COUT

CIN2 Control Pin Capacitance

Notes:

1. Sampled, not 100% tested.

2. Test conditions TA = 25°C, f = 1.0MHz

Output Capacitance

Test Setup

PLCC and P-DIP Pin Capacitance

Parameter Symbol Parameter Description

CIN Input Capacitance

COUT

Output Capacitance

Test Setup

VIN=0

VOUT=0

VIN=0

VIN=0

VOUT=0

-100 mA

-1.0V

Typ.

6

8.5

7.5

Typ.

4
8

+100 mA

12.5V

Max.

7.5 pF
12

9

Max. Unit

6

12

Unit

pF
pF

pF
pF

CIN2

Notes:

3. Sampled, not 100% tested.

4. Test conditions TA = 25°C, f = 1.0MHz

Control Pin Capacitance

VPP=0

8

12

pF

Data Retention

Parameter

Minimum Pattern Data Retention Time

Test Conditions

150°C
125°C

Min

10
20 Years

Unit

Years

PRELIMINARY (August, 2001, Version 0.3) 25 AMIC Technology, Inc.

A29010 Series

Test Conditions

Test Specifications

Test Condition -55 All others Unit

Output Load 1 TTL gate
Output Load Capacitance, CL(including jig capacitance) 30 100 pF
Input Rise and Fall Times 5 20 ns
Input Pulse Levels 0.0 - 3.0 0.45 - 2.4 V
Input timing measurement reference levels 1.5 0.8, 2.0 V
Output timing measurement reference levels 1.5 0.8, 2.0 V

Test Setup

5.0 V

2.7 K

Ω

Device

Under

Test

CL

6.2 K

Ω

Diodes = IN3064 or Equivalent

PRELIMINARY (August, 2001, Version 0.3) 26 AMIC Technology, Inc.

A29010 Series

Current

Ordering Information

Part No. Access Time

A29010-55 32Pin DIP

A29010L-55 32Pin PLCC

A29010V-55

A29010-70 32Pin DIP

A29010L-70 32Pin PLCC

A29010V-70

A29010-90 32Pin DIP

A29010L-90 32Pin PLCC

A29010V-90

Active Read

(ns)

55 20 30 1

70 20 30 1

90 20 30 1

Typ. (mA)

Program/Erase

Current

Typ. (mA)

Standby Current

Typ. (µA)

Package

32Pin TSOP

32Pin TSOP

32Pin TSOP

PRELIMINARY (August, 2001, Version 0.3) 27 AMIC Technology, Inc.

A29010 Series

Package Information

P-DIP 32L Outline Dimensions unit: inches/mm

D

32

E

17

1

AL

A2

B

B1

16

A1

Base Plane

Seating Plane

e

θ

E

1

C

E

A

Symbol

A - - 0.210 - - 5.334
A1 0.015 - - 0.381 - ­A2 0.149 0.154 0.159 3.785 3.912 4.039

B - 0.018 - - 0.457 ­B1 - 0.050 - - 1.270 -

C - 0.010 - - 0.254 -

D 1.645 1.650 1.655 41.783 41.91 42.037

E 0.537 0.542 0.547 13.64 13.767 13.894
E1 0.590 0.600 0.610 14.986 15.240 15.494
EA 0.630 0.650 0.670 16.002 16.510 17.018

e - 0.100 - - 2.540 -

L 0.120 0.130 0.140 3.048 3.302 3.556

θ 0°

Dimensions in inches Dimensions in mm

Min Nom Max Min Nom Max

-

15° 0°

-

15°

Notes:

1. The maximum value of dimension D includes end flash.

2. Dimension E does not include resin fins.

PRELIMINARY (August, 2001, Version 0.3) 28 AMIC Technology, Inc.

A29010 Series

Package Information

PLCC 32L Outline Dimension unit: inches/mm

13

HD

D

5

14

20

21

A

b

e

b

1

GD

A1 A2

y

D

4

1

E

HE

32

30

29

c

L

θ

GE

Symbol

A - - 0.134 - - 3.40
A1 0.0185 - - 0.47 - ­A2 0.105 0.110 0.115 2.67 2.80 2.93

b1 0.026 0.028 0.032 0.66 0.71 0.81

b 0.016 0.018 0.021 0.41 0.46 0.54

C 0.008 0.010 0.014 0.20 0.254 0.35

D 0.547 0.550 0.553 13.89 13.97 14.05

E 0.447 0.450 0.453 11.35 11.43 11.51

e 0.044 0.050 0.056 1.12 1.27 1.42

GD 0.490 0.510 0.530 12.45 12.95 13.46
GE
HD

HE 0.485 0.490 0.495 12.32 12.45 12.57

L 0.075 0.090 0.095 1.91 2.29 2.41

y

θ 0° - 10° 0° - 10°

Dimensions in inches Dimensions in mm

Min Nom Max Min Nom Max

0.390 0.410 0.430 9.91 10.41 10.92

0.585 0.590 0.595 14.86 14.99 15.11

- - 0.003 - - 0.075

Notes:

1. Dimensions D and E do not include resin fins.

2. Dimensions GD & GE are for PC Board surface mount pad pitch
design reference only.

PRELIMINARY (August, 2001, Version 0.3) 29 AMIC Technology, Inc.

A29010 Series

Dimensions in inches

Dimensions in mm

Package Information
TSOP 32L TYPE I (8 X 20mm) Outline Dimensions unit: inches/mm

D

e

A2

E

HD

Detail "A"

y

D

c

A1

L

LE

Detail "A"

S

b

A

θ

Symbol

A - - 0.047 - - 1.20
A1
A2

b 0.007 0.009 0.011 0.18 0.22 0.27

c 0.004 - 0.008 0.11 - 0.20

D 0.720 0.724 0.728 18.30 18.40 18.50

E - 0.315 0.319 - 8.00 8.10

e 0.020 BSC 0.50 BSC

HD 0.779 0.787 0.795 19.80 20.00 20.20

L 0.016 0.020 0.024 0.40 0.50 0.60
LE - 0.032 - - 0.80 -

S - - 0.020 - - 0.50

y - - 0.003 - - 0.08

θ 0°

Min Nom Max Min Nom Max

0.002 - 0.006 0.05 - 0.15

0.037 0.039 0.041 0.95 1.00 1.05

-

5° 0°

-

5°

PRELIMINARY (August, 2001, Version 0.3) 30 AMIC Technology, Inc.

Notes:

1. The maximum value of dimension D includes end flash.

2. Dimension E does not include resin fins.

3. Dimension S includes end flash.