Page 1
A25L40P Series
4 Mbit, Low Voltage, Serial Flash Memory
Preliminary With 85MHz SPI Bus Interface
Document Title
4 Mbit, Low Voltage, Serial Flash Memory With 85MHz SPI Bus Interface
Revision History
Rev. No.
History Issue Date Remark
0.0 Initial issue August 29, 2006 Preliminary
0.1 Add the Fast Read Dual Operation Instruction April 4, 2006
Add QFN 8L (5 x 6mm) package type
0.2 Add QFN 8L (5 x 6mm) package outline dimensions April 20, 2006
0.3 Modify the Part No. for Top/Bottom boot sector type September 5, 2006
Add DIP 8(300mil) package type
Modify the maximum clock rate to 75MHz
0.4 Add transient voltage (<20ns) on any pin to ground potential spec. May 25, 2007
Add the maximum clock rate of 3.0V~3.6V : 85MHz
PRELIMINARY (May, 2007, Version 0.4) AMIC Technology Corp.
Page 2
A25L40P Series
4 Mbit, Low Voltage, Serial Flash Memory
Preliminary With 85MHz SPI Bus Interface
FEATURES
4 Mbit of Flash Memory
Flexible Sector Architecture (4/4/8/16/32)KB/64x7 KB
Bulk Erase (4 Mbit) in 6s (typical)
Sector Erase (512 Kbit) in 1s (typical)
Page Program (up to 256 Bytes) in 3ms (typical)
2.7 to 3.6V Single Supply Voltage
SPI Bus Compatible Serial Interface
85MHz Clock Rate (maximum)
Deep Power-down Mode 1µA (typical)
Top or Bottom boot block configuration available
Electronic Signatures
- JEDEC Standard two-Byte Signature (2013h)
- RES Instruction, One-Byte, Signature (12h), for backward
compatibility
Package options
- 8-pin SOP (150mil or 209mil), 16-pin SOP, 8-pin DIP
(300mil) or 8-pin QFN
- All Pb-free (Lead-free) products are RoHS compliant
Pin Configurations
SO8 Connections SO16 Connections
GENERAL DESCRIPTION
The A25L40P is a 4 Mbit (512K x 8) Serial Flash Memory, with
advanced write protection mechanisms, accessed by a high
speed SPI-compatible bus.
The memory can be programmed 1 to 256 bytes at a time, using
the Page Program instruction.
The memory is organized as 8 sectors, each containing 256
pages. Each page is 256 bytes wide. Thus, the whole memory
can be viewed as consisting of 2048 pages, or 524,288 bytes.
The whole memory can be erased using the Bulk Erase
instruction, or a sector at a time, using the Sector Erase
instruction.
A25L40P
C
D
DU
DU
DU
DU
V
W
SS
S
Q
W
V
SS
A25L40P
1 8
2 7
3 6
4 5
V
CC
HOLD
C
D
HOLD
Note:
DU = Do not Use
V
DU
DU
DU
DU
CC
S
Q
1 16
2 15
3 14
4 13
5 12
6 11
7 10
8 9
DIP8 Connections QFN8 Connections
A25L40PA25L40P
V
8
CC
HOLD
7
C
6
D
5
V
S
Q
W
SS
1 8
2 7
3 6
4 5
V
CC
HOLD
C
D
1
S
Q
2
3
W
V
4
SS
PRELIMINARY (May, 2007, Version 0.4) 1 AMIC Technology Corp.
Page 3
A25L40P Series
Block Diagram
HOLD
W
Control Logic
S
C
D
Q
Address register
and Counter
High Voltage
Generator
I/O Shift Register
256 Byte
Data Buffer
Status
Register
7FFFFh
Size of the
read-only
memory area
Pin Descriptions
Pin No. Description
C Serial Clock
D Serial Data Input
Q Serial Data Output
S
W
HOLD
Chip Select
Write Protect
Hold
Y Decoder
00000h
256 Byte (Page Size)
X Decoder
000FFh
Logic Symbol
W
HOLD
C
S
V
CC
A25L40P
QD
VCC Supply Voltage
VSS Ground
V
SS
PRELIMINARY (May, 2007, Version 0.4) 2 AMIC Technology Corp.
Page 4
A25L40P Series
SIGNAL DESCRIPTION
Serial Data Output (Q). This output signal is used to transfer
data serially out of the device. Data is shifted out on the
falling edge of Serial Clock (C).
Serial Data Input (D). This input signal is used to transfer
data serially into the device. It receives instructions,
addresses, and the data to be programmed. Values are
latched on the rising edge of Serial Clock (C).
Serial Clock (C). This input signal provides the timing of the
serial interface. Instructions, addresses, or data present at
Serial Data Input (D) are latched on the rising edge of Serial
Clock (C). Data on Serial Data Output (Q) changes after the
falling edge of Serial Clock (C).
Chip Select (S). When this input signal is High, the device is
deselected and Serial Data Output (Q) is at high impedance.
Unless an internal Program, Erase or Write Status Register
cycle is in progress, the device will be in the Standby mode
(this is not the Deep Power-down mode). Driving Chip Select
) Low enables the device, placing it in the active power
(
S
mode.
After Power-up, a falling edge on Chip Select (
prior to the start of any instruction.
Hold (
any serial communications with the device without
deselecting the device.
During the Hold condition, the Serial Data Output (Q) is high
impedance, and Serial Data Input (D) and Serial Clock (C)
are Don’t Care. To start the Hold condition, the device must
be selected, with Chip Select (
Write Protect (
to freeze the size of the area of memory that is protected
against program or erase instructions (as specified by the
values in the BP2, BP1 and BP0 bits of the Status Register).
HOLD
). The Hold (
). The main purpose of this input signal is
W
) signal is used to pause
HOLD
) driven Low.
S
) is required
S
SPI MODES
These devices can be driven by a microcontroller with its SPI
peripheral running in either of the two following modes:
– CPOL=0, CPHA=0
– CPOL=1, CPHA=1
For these two modes, input data is latched in on the rising
edge of Serial Clock (C), and output data is available from the
falling edge of Serial Clock (C).
The difference between the two modes, as shown in Figure 2,
is the clock polarity when the bus master is in Stand-by mode
and not transferring data:
– C remains at 0 for (CPOL=0, CPHA=0)
– C remains at 1 for (CPOL=1, CPHA=1)
PRELIMINARY (May, 2007, Version 0.4) 3 AMIC Technology Corp.
Page 5
A25L40P Series
Figure 1. Bus Master and Memory Devices on the SPI Bus
SPI Interface with
(CPOL, CPHA)
= (0, 0) or (1, 1)
Bus Master
(ST6, ST7, ST9,
ST10, Other)
CS3 CS2 CS1
Note: The Write Protect (
W
SDO
SDI
SCK
) and Hold (
CQD
SPI Memory
Device
S W HOLD
) signals should be driven, High or Low as appropriate.
HOLD
CQD
SPI Memory
Device
S W HOLD
CQD
SPI Memory
Device
S W HOLD
Figure 2. SPI Modes Supported
CPOL CPHA
00
11
C
C
D
Q
MSB
MSB
PRELIMINARY (May, 2007, Version 0.4) 4 AMIC Technology Corp.
Page 6
A25L40P Series
OPERATING FEATURES
Page Programming
To program one data byte, two instructions are required: Write
Enable (WREN), which is one byte, and a Page Program (PP)
sequence, which consists of four bytes plus data. This is
followed by the internal Program cycle (of duration t
To spread this overhead, the Page Program (PP) instruction
allows up to 256 bytes to be programmed at a time (changing
bits from 1 to 0), provided that they lie in consecutive
addresses on the same page of memory.
PP
).
Sector Erase and Bulk Erase
The Page Program (PP) instruction allows bits to be reset
from 1 to 0. Before this can be applied, the bytes of memory
need to have been erased to all 1s (FFh). This can be
achieved, a sector at a time, using the Sector Erase (SE)
instruction, or throughout the entire memory, using the Bulk
Erase (BE) instruction. This starts an internal Erase cycle (of
duration tSE or tBE).
The Erase instruction must be preceded by a Write Enable
(WREN) instruction.
Polling During a Write, Program or Erase Cycle
A further improvement in the time to Write Status Register
(WRSR), Program (PP) or Erase (SE or BE) can be achieved
by not waiting for the worst case delay (tW, tPP, tSE, or tBE). The
Write In Progress (WIP) bit is provided in the Status Register
so that the application program can monitor its value, polling it
to establish when the previous Write cycle, Program cycle or
Erase cycle is complete.
Active Power, Stand-by Power and Deep
Power-Down Modes
When Chip Select (S) is Low, the device is enabled, and in
the Active Power mode.
When Chip Select (
could remain in the Active Power mode until all internal cycles
have completed (Program, Erase, Write Status Register). The
device then goes in to the Stand-by Power mode. The device
consumption drops to I
The Deep Power-down mode is entered when the specific
instruction (the Enter Deep Power-down Mode (DP)
instruction) is executed. The device consumption drops
further to ICC2. The device remains in this mode until another
specific instruction (the Release from Deep Power-down
Mode and Read Electronic Signature (RES) instruction) is
executed.
All other instructions are ignored while the device is in the
Deep Power-down mode. This can be used as an extra
software protection mechanism, when the device is not in
active use, to protect the device from inadvertent Write,
Program or Erase instructions.
) is High, the device is disabled, but
S
CC1.
Status Register
The Status Register contains a number of status and control
bits that can be read or set (as appropriate) by specific
instructions.
WIP bit. The Write In Progress (WIP) bit indicates whether
the memory is busy with a Write Status Register, Program or
Erase cycle.
WEL bit. The Write Enable Latch (WEL) bit indicates the
status of the internal Write Enable Latch, BP2, BP1, and BP0
bits. The Block Protect (BP2, BP1, BP0) bits are non-volatile.
They define the size of the area to be software protected
against Program and Erase instructions.
SRWD bit. The Status Register Write Disable (SRWD) bit is
operated in conjunction with the Write Protect (W) signal.
The Status Register Write Disable (SRWD) bit and Write
Protect (W) signal allow the device to be put in the Hardware
Protected mode. In this mode, the non-volatile bits of the
Status Register (SRWD, BP2, BP1, BP0) become read-only
bits.
Protection Modes
The environments where non-volatile memory devices are
used can be very noisy. No SPI device can operate correctly
in the presence of excessive noise. To help combat this, the
A25L40P boasts the following data protection mechanisms:
Power-On Reset and an internal timer (t
protection against inadvertant changes while the power
supply is outside the operating specification.
Program, Erase and Write Status Register instructions are
checked that they consist of a number of clock pulses that
is a multiple of eight, before they are accepted for
execution.
All instructions that modify data must be preceded by a
Write Enable (WREN) instruction to set the Write Enable
Latch (WEL) bit. This bit is returned to its reset state by
the following events:
- Power-up
- Write Disable (WRDI) instruction completion
- Write Status Register (WRSR) instruction completion
- Page Program (PP) instruction completion
- Sector Erase (SE) instruction completion
- Bulk Erase (BE) instruction completion
The Block Protect (BP2, BP1, BP0) bits allow part of the
memory to be configured as read-only. This is the
Software Protected Mode (SPM).
The Write Protect (
(BP2, BP1, BP0) bits and Status Register Write Disable
(SRWD) bit to be protected. This is the Hardware
Protected Mode (HPM).
In addition to the low power consumption feature, the
Deep Power-down mode offers extra software protection
from inadvertant Write, Program and Erase instructions,
as all instructions are ignored except one particular
instruction (the Release from Deep Power-down
instruction).
) signal allows the Block Protect
W
) can provide
PUW
PRELIMINARY (May, 2007, Version 0.4) 5 AMIC Technology Corp.
Page 7
A25L40P Series
Table 1. Protected Area Sizes
A25L40PT Top Boot Block
Status Register Content Memory Content
BP2 Bit BP1 Bit BP0 Bit Protected Area Unprotected Area
0 0 0 none All sectors1 (eight sectors: 0 to 7)
1 1 1 All sectors (eight sectors: 0 to 7) none
Note: 1. The device is ready to accept a Bulk Erase instruction if, and only if, all Block Protect (BP2, BP1, BP0) are 0.
2. The sector 7 include sector 7-0, sector 7-1, sector 7-2, sector 7-3 and sector 7-4.
A25L40PU Bottom Boot Block
Status Register Content Memory Content
BP2 Bit BP1 Bit BP0 Bit Protected Area Unprotected Area
0 0 0 none All sectors1 (eight sectors: 0 to 7)
1 1 1 All sectors (eight sectors: 0 to 7) none
Note: 1. The device is ready to accept a Bulk Erase instruction if, and only if, all Block Protect (BP2, BP1, BP0) are 0.
2. The sector 0 include sector 0-0, sector 0-1, sector 0-2, sector 0-3, and sector 0-4.
PRELIMINARY (May, 2007, Version 0.4) 6 AMIC Technology Corp.
Page 8
A25L40P Series
Hold Condition
The Hold (
communications with the device without resetting the clocking
sequence. However, taking this signal Low does not
terminate any Write Status Register, Program or Erase cycle
that is currently in progress.
To enter the Hold condition, the device must be selected, with
Chip Select (
The Hold condition starts on the falling edge of the Hold
(
(C) being Low (as shown in Figure 3.).
The Hold condition ends on the rising edge of the Hold
(
(C) being Low.
If the falling edge does not coincide with Serial Clock (C)
being Low, the Hold condition starts after Serial Clock (C)
next goes Low. Similarly, if the rising edge does not coincide
with Serial Clock (C) being Low, the Hold condition ends after
) signal, provided that this coincides with Serial Clock
HOLD
) signal, provided that this coincides with Serial Clock
HOLD
) signal is used to pause any serial
HOLD
) Low.
S
Serial Clock (C) next goes Low. This is shown in Figure 3.
During the Hold condition, the Serial Data Output (Q) is high
impedance, and Serial Data Input (D) and Serial Clock (C)
are Don’t Care.
Normally, the device is kept selected, with Chip Select (
driven Low, for the whole duration of the Hold condition. This
is to ensure that the state of the internal logic remains
unchanged from the moment of entering the Hold condition.
If Chip Select (S) goes High while the device is in the Hold
condition, this has the effect of resetting the internal logic of
the device. To restart communication with the device, it is
necessary to drive Hold (
Chip Select (
back to the Hold condition.
) Low. This prevents the device from going
S
) High, and then to drive
HOLD
Figure 3. Hold Condition Activation
C
)
S
HOLD
Hold
Condition
(standard use)
Hold
Condition
(non-standard use)
PRELIMINARY (May, 2007, Version 0.4) 7 AMIC Technology Corp.
Page 9
A25L40P Series
MEMORY ORGANIZATION
The memory is organized as:
524,288 bytes (8 bits each)
8 sectors (one (4/4/8/16/32) Kbytes & 64x7 Kbytes
2048 pages (256 bytes each).
Each page can be individually programmed (bits are
programmed from 1 to 0). The device is Sector or Bulk
Erasable (bits are erased from 0 to 1) but not Page Erasable.
Table 2. Memory Organization
A25L40PT Top Boot Block Address Table
Sector Sector Size (Kbytes) Address Range
7-4 4 7F000h 7FFFFh
7-3 4 7E000h 7EFFFh
7-2 8 7C000h 7DFFFh
7-1 16 78000h 7BFFFh
7-0 32 70000h 77FFFh
6 64 60000h 6FFFFh
5 64 50000h 5FFFFh
4 64 40000h 4FFFFh
3 64 30000h 3FFFFh
2 64 20000h 2FFFFh
1 64 10000h 1FFFFh
0 64 00000h 0FFFFh
A25L40PU Bottom Boot Block Address Table
Sector Sector Size (Kbytes) Address Range
7 64 70000h 7FFFFh
6 64 60000h 6FFFFh
5 64 50000h 5FFFFh
4 64 40000h 4FFFFh
3 64 30000h 3FFFFh
2 64 20000h 2FFFFh
1 64 10000h 1FFFFh
0-4 32 08000h 0FFFFh
0-3 16 04000h 07FFFh
0-2 8 02000h 03FFFh
0-1 4 01000h 01FFFh
0-0 4 00000h 00FFFh
PRELIMINARY (May, 2007, Version 0.4) 8 AMIC Technology Corp.
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A25L40P Series
INSTRUCTIONS
All instructions, addresses and data are shifted in and out of
the device, most significant bit first.
Serial Data Input (D) is sampled on the first rising edge of
Serial Clock (C) after Chip Select (
one-byte instruction code must be shifted in to the device,
most significant bit first, on Serial Data Input (D), each bit
being latched on the rising edges of Serial Clock (C).
The instruction set is listed in Table 3.
Every instruction sequence starts with a one-byte instruction
code. Depending on the instruction, this might be followed by
address bytes, or by data bytes, or by both or none.
In the case of a Read Data Bytes (READ), Read Data Bytes at
Higher Speed (Fast_Read), Read Status Register (RDSR) or
Release from Deep Power-down, Read Device Identification
and Read Electronic Signature (RES) instruction, the shifted-in
instruction sequence is followed by a data-out sequence. Chip
Select (
) can be driven High after any bit of the data-out
S
) is driven Low. Then, the
S
sequence is being shifted out.
In the case of a Page Program (PP), Sector Erase (SE), Bulk
Erase (BE), Write Status Register (WRSR), Write Enable
(WREN), Write Disable (WRDI) or Deep Power-down (DP)
instruction, Chip Select (
byte boundary, otherwise the instruction is rejected, and is not
executed. That is, Chip Select (S) must driven High when the
number of clock pulses after Chip Select (
is an exact multiple of eight.
All attempts to access the memory array during a Write Status
Register cycle, Program cycle or Erase cycle are ignored, and
the internal Write Status Register cycle, Program cycle or
Erase cycle continues unaffected.
) must be driven High exactly at a
S
) being driven Low
S
Table 3. Instruction Set
Instruction Description
One-byte
Instruction Code
Address
Bytes
Dummy
Bytes
Data
Bytes
WREN Write Enable 0000 0110 06h 0 0 0
WRDI Write Disable 0000 0100 04h 0 0 0
RDSR Read Status Register 0000 0101 05h 0 0 1 to ∞
WRSR Write Status Register 0000 0001 01h 0 0 1
READ Read Data Bytes 0000 0011 03h 3 0 1 to ∞
FAST_READ Read Data Bytes at Higher Speed 0000 1011 0Bh 3 1 1 to ∞
PP Page Program 0000 0010 02h 3 0 1 to 256
SE Sector Erase 1101 1000 D8h 3 0 0
BE Bulk Erase 1100 0111 C7h 0 0 0
DP Deep Power-down 1011 1001 B9h 0 0 0
RDID Read Device Identification 1001 1111 9Fh 0 0 1 to 4
RES
Release from Deep Power-down, and
Read Electronic Signature
Release from Deep Power-down
1010 1011 ABh
0 3 1 to ∞
0 0 0
PRELIMINARY (May, 2007, Version 0.4) 9 AMIC Technology Corp.
Page 11
A25L40P Series
Write Enable (WREN)
The Write Enable (WREN) instruction (Figure 4.) sets the
Write Enable Latch (WEL) bit.
The Write Enable Latch (WEL) bit must be set prior to every
Page Program (PP), Sector Erase (SE), Bulk Erase (BE) and
Write Status Register (WRSR) instruction.
The Write Enable (WREN) instruction is entered by driving
Chip Select (S) Low, sending the instruction code, and then
driving Chip Select (
) High.
S
Figure 4. Write Enable (WREN) Instruction Sequence
S
01 23 45 6 7
C
Instruction
D
Q
High Impedance
Write Disable (WRDI)
The Write Disable (WRDI) instruction (Figure 5.) resets the
Write Enable Latch (WEL) bit.
The Write Disable (WRDI) instruction is entered by driving Chip
Select (S) Low, sending the instruction code, and then driving
Chip The Write Enable Latch (WEL) bit is reset under the
following conditions:
Figure 5. Write Disable (WRDI) Instruction Sequence
S
01 23 45 6 7
C
Instruction
D
Q
High Impedance
﹣ Power-up
﹣ Write Disable (WRDI) instruction completion
﹣ Write Status Register (WRSR) instruction completion
﹣ Page Program (PP) instruction completion
﹣ Sector Erase (SE) instruction completion
﹣ Bulk Erase (BE) instruction completion
PRELIMINARY (May, 2007, Version 0.4) 10 AMIC Technology Corp.
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A25L40P Series
Read Status Register (RDSR)
The Read Status Register (RDSR) instruction allows the
Status Register to be read. The Status Register may be read
at any time, even while a Program, Erase or Write Status
Register cycle is in progress. When one of these cycles is in
progress, it is recommended to check the Write In Progress
(WIP) bit before sending a new instruction to the device. It is
also possible to read the Status Register continuously, as
shown in Figure 6.
Table 4. Status Register Format
b0b7
SRWD 0 0 BP2 BP1 BP0 WEL WIP
Status Register
Write Protect
Block Protect Bits
Write Enable Latch Bit
Write In Progress Bit
The status and control bits of the Status Register are as
follows:
WIP bit. The Write In Progress (WIP) bit indicates whether the
memory is busy with a Write Status Register, Program or
Erase cycle. When set to 1, such a cycle is in progress, when
reset to 0 no such cycle is in progress.
WEL bit. The Write Enable Latch (WEL) bit indicates the
status of the internal Write Enable Latch. When set to 1 the
internal Write Enable Latch is set, when set to 0 the internal
Write Enable Latch is reset and no Write Status Register,
Program or Erase instruction is accepted.
BP2, BP1, BP0 bits. The Block Protect (BP2, BP1, BP0) bits
are non-volatile. They define the size of the area to be
software protected against Program and Erase instructions.
These bits are written with the Write Status Register (WRSR)
instruction. When one or both of the Block Protect (BP2, BP1,
BP0) bits is set to 1, the relevant memory area (as defined in
Table 1.) becomes protected against Page Program (PP) and
Sector Erase (SE) instructions. The Block Protect (BP2, BP1,
BP0) bits can be written provided that the Hardware Protected
mode has not been set. The Bulk Erase (BE) instruction is
executed if, and only if, both Block Protect (BP2, BP1, BP0)
bits are 0.
SRWD bit. The Status Register Write Disable (SRWD) bit is
operated in conjunction with the Write Protect (
The Status Register Write Disable (SRWD) bit and Write
Protect (
Protected mode (when the Status Register Write Disable
(SRWD) bit is set to 1, and Write Protect (
In this mode, the non-volatile bits of the Status Register
(SRWD, BP2, BP1, BP0) become read-only bits and the Write
Status Register (WRSR) instruction is no longer accepted for
execution.
) signal allow the device to be put in the Hardware
W
) is driven Low).
W
) signal.
W
Figure 6. Read Status Register (RDSR) Instruction Sequence and Data-Out Sequence
S
01234 567
C
Instruction
D
Q
High Impedance
810911121314 15
Status Register Out
5
67
MSB MSB
01
Status Register Out
345677
2
01234
PRELIMINARY (May, 2007, Version 0.4) 11 AMIC Technology Corp.
Page 13
A25L40P Series
Write Status Register (WRSR)
The Write Status Register (WRSR) instruction allows new
values to be written to the Status Register. Before it can be
accepted, a Write Enable (WREN) instruction must previously
have been executed. After the Write Enable (WREN)
instruction has been decoded and executed, the device sets
the Write Enable Latch (WEL).
The Write Status Register (WRSR) instruction is entered by
driving Chip Select (S) Low, followed by the instruction code
and the data byte on Serial Data Input (D).
The instruction sequence is shown in Figure 7. The Write
Status Register (WRSR) instruction has no effect on b6, b5,
b1 and b0 of the Status Register. b6 and b5 are always read
as 0.
Chip Select (
data byte has been latched in. If not, the Write Status Register
(WRSR) instruction is not executed. As soon as Chip Select
S
) is driven High, the self-timed Write Status Register cycle
(
(whose duration is t
S
) must be driven High after the eighth bit of the
) is initiated. While the Write Status
W
Register cycle is in progress, the Status Register may still be
read to check the value of the Write In Progress (WIP) bit.
The Write In Progress (WIP) bit is 1 during the self-timed
Write Status Register cycle, and is 0 when it is completed.
When the cycle is completed, the Write Enable Latch (WEL) is
reset.
The Write Status Register (WRSR) instruction allows the user
to change the values of the Block Protect (BP2, BP1, BP0)
bits, to define the size of the area that is to be treated as
read-only, as defined in Table 1. The Write Status Register
(WRSR) instruction also allows the user to set or reset the
Status Register Write Disable (SRWD) bit in accordance with
the Write Protect (
Disable (SRWD) bit and Write Protect (
device to be put in the Hardware Protected Mode (HPM). The
Write Status Register (WRSR) instruction is not executed
once the Hardware Protected Mode (HPM) is entered.
) signal. The Status Register Write
W
) signal allow the
W
Figure 7. Write Status Register (WRSR) Instruction Sequence
S
6
8109012345
7
C
Instruction
D
Q
High Impedance
MSB
11 121314 15
Status
Register In
5
6701
234
PRELIMINARY (May, 2007, Version 0.4) 12 AMIC Technology Corp.
Page 14
A25L40P Series
Table 5. Protection Modes
W
Signal
1 0
0 0
1 1
0 1
Note: 1. As defined by the values in the Block Protect (BP2, BP1, BP0) bits of the Status Register, as shown in Table 1.
Bit
Mode
Software
Protected
(SPM)
Hardware
Protected
(HPM)
SRWD
Write Protection of the
Status Register
Status Register is Writable (if the
WREN instruction has set the
WEL bit) The values in the
SRWD, BP2, BP1 and BP0 bits
can be changed
Status Register is Hardware write
protected The values in the
SRWD, BP2, BP1 and BP0 bits
cannot be changed
Protected Area
Protected against Page
Program, Sector Erase
and Bulk Erase
Protected against Page
Program, Sector Erase
and Bulk Erase
Memory Content
1
Unprotected Area
Ready to accept Page
Program and Sector Erase
instructions
Ready to accept Page
Program and Sector Erase
instructions
1
The protection features of the device are summarized in Table
5.
When the Status Register Write Disable (SRWD) bit of the
Status Register is 0 (its initial delivery state), it is possible to
write to the Status Register provided that the Write Enable
Latch (WEL) bit has previously been set by a Write Enable
(WREN) instr
(
) is driven High or Low.
W
When the Status Register Write Disable (SRWD) bit of the
Status Register is set to 1, two cases need to be considered,
depending on the state of Write Protect (
If Write Protect (
to the Status Register provided that the Write Enable
Latch (WEL) bit has previously been set by a Write Enable
(WREN) instruction.
If Write Protect (
write to the Status Register even if the Write Enable Latch
(WEL) bit has previously been set by a Write Enable
(WREN) instruction. (Attempts to write to the Status
uction, regardless of the whether Write Protect
):
W
) is driven High, it is possible to write
W
) is driven Low, it is not possible to
W
Register are rejected, and are not accepted for execution).
As a consequence, all the data bytes in the memory area
that are software protected (SPM) by the Block Protect
(BP2, BP1, BP0) bits of the Status Register, are also
hardware protected against data modification.
Regardless of the order of the two events, the Hardware
Protected Mode (HPM) can be entered:
by setting the Status Register Write Disable (SRWD) bit
after driving Write Protect (
or by driving Write Protect (
Status Register Write Disable (SRWD) bit.
The only way to exit the Hardware Protected Mode (HPM)
once entered is to pull Write Protect (
If Write Protect (W) is permanently tied High, the Hardware
Protected Mode (HPM) can never be activated, and only the
Software Protected Mode (SPM), using the Block Protect
(BP2, BP1, BP0) bits of the Status Register, can be used.
) Low
W
) Low after setting the
W
) High.
W
PRELIMINARY (May, 2007, Version 0.4) 13 AMIC Technology Corp.
Page 15
A25L40P Series
Read Data Bytes (READ)
The device is first selected by driving Chip Select (S) Low.
The instruction code for the Read Data Bytes (READ)
instruction is followed by a 3-byte address (A23-A0), each bit
being latched-in during the rising edge of Serial Clock (C).
Then the memory contents, at that address, is shifted out on
Serial Data Output (Q), each bit being shifted out, at a
maximum frequency fR, during the falling edge of Serial Clock
(C).
The instruction sequence is shown in Figure 8. The first byte
addressed can be at any location. The address is
automatically incremented to the next higher address after
each byte of data is shifted out. The whole memory can,
therefore, be read with a single Read Data Bytes (READ)
instruction. When the highest address is reached, the
address counter rolls over to 000000h, allowing the read
sequence to be continued indefinitely.
The Read Data Bytes (READ) instruction is terminated by
S
driving Chip Select (
High at any time during data output. Any Read Data Bytes
(READ) instruction, while an Erase, Program or Write cycle is
in progress, is rejected without having any effects on the
cycle that is in progress.
) High. Chip Select (S) can be driven
Figure 8. Read Data Bytes (READ) Instruction Sequence and Data-Out Sequence
S
810901234567
C
Instruction
24-Bit Address
28 29 30 313233 34 35 36 37 38 39
D
Q
Note: Address bits A23 to A19 are Don’t Care.
High Impedance
232221
MSB
210
3
7
MSB
Data Out 1
54
32
10
Data Out 2
76
PRELIMINARY (May, 2007, Version 0.4) 14 AMIC Technology Corp.
Page 16
A25L40P Series
Read Data Bytes at Higher Speed (FAST_READ)
The device is first selected by driving Chip Select (S) Low.
The instruction code for the Read Data Bytes at Higher
Speed (FAST_READ) instruction is followed by a 3-byte
address (A23-A0) and a dummy byte, each bit being
latched-in during the rising edge of Serial Clock (C). Then the
memory contents, at that address, is shifted out on Serial
Data Output (Q), each bit being shifted out, at a maximum
frequency f
The instruction sequence is shown in Figure 9. The first byte
addressed can be at any location. The address is
automatically incremented to the next higher address after
each byte of data is shifted out. The whole memory can,
therefore, be read with a single Read Data Bytes at Higher
, during the falling edge of Serial Clock (C).
C
Speed (FAST_READ) instruction. When the highest address
is reached, the address counter rolls over to 000000h,
allowing the read sequence to be continued indefinitely.
The Read Data Bytes at Higher Speed (FAST_READ)
S
instruction is terminated by driving Chip Select (
S
Chip Select (
output. Any Read Data Bytes at Higher Speed (FAST_READ)
instruction, while an Erase, Program or Write cycle is in
progress, is rejected without having any effects on the cycle
that is in progress.
) can be driven High at any time during data
) High.
Figure 9. Read Data Bytes at Higher Speed (FAST_READ) Instruction Sequence an d Data-Out Sequence
S
810901234567
C
Instruction
24-Bit Address
28 29 30 31
D
Q
S
C
D
Q
Note: Address bits A23 to A19 are Don’t Care.
High Impedance
33 34 35 36 37 38 39
32
Dummy Byte
654
7 3
20
1
232221
MSB
40
41 42 43 44 45 46 47
Data Out 1
54
6
7
MSB
3
32
210
0
1
0
MSB
7
Data Out 2
54
6
32
0
1
7
MSB
PRELIMINARY (May, 2007, Version 0.4) 15 AMIC Technology Corp.
Page 17
A25L40P Series
Page Program (PP)
The Page Program (PP) instruction allows bytes to be
programmed in the memory (changing bits from 1 to 0).
Before it can be accepted, a Write Enable (WREN) instruction
must previously have been executed. After the Write Enable
(WREN) instruction has been decoded, the device sets the
Write Enable Latch (WEL).
The Page Program (PP) instruction is entered by driving Chip
S
Select (
address bytes and at least one data byte on Serial Data Input
(D). If the 8 least significant address bits (A7-A0) are not all
zero, all transmitted data that goes beyond the end of the
current page are programmed from the start address of the
same page (from the address whose 8 least significant bits
(A7-A0) are all zero). Chip Select (
the entire duration of the sequence.
The instruction sequence is shown in Figure 12. If more than
256 bytes are sent to the device, previously latched data are
discarded and the last 256 data bytes are guaranteed to be
) Low, followed by the instruction code, three
S
) must be driven Low for
programmed correctly within the same page. If less than 256
Data bytes are sent to device, they are correctly programmed
at the requested addresses without having any effects on the
other bytes of the same page.
S
Chip Select (
last data byte has been latched in, otherwise the Page
Program (PP) instruction is not executed.
As soon as Chip Select (S) is driven High, the self-timed
Page Program cycle (whose duration is t
the Page Program cycle is in progress, the Status Register
may be read to check the value of the Write In Progress (WIP)
bit. The Write In Progress (WIP) bit is 1 during the self-timed
Page Program cycle, and is 0 when it is completed. At some
unspecified time before the cycle is completed, the Write
Enable Latch (WEL) bit is reset.
A Page Program (PP) instruction applied to a page which is
protected by the Block Protect (BP2, BP1, BP0) bits (see
Table 2 and Table 1) is not executed.
) must be driven High after the eighth bit of the
) is initiated. While
PP
Figure 12. Page Program (PP) Instruction Sequence
S
6
8109012345
7
C
Instruction
D
S
46454443424140
47
C
Data Byte 2
D
Note: Address bits A23 to A19 are Don’t Care.
7
MSB
6
54
32
1
0
7
MSB
24-Bit Address
232221
MSB
Data Byte 3
54
6
28 29 30 313233 34 35 36 37 38 39
Data Byte 1
210
51504948
3
32
MSB
5553 5452
0
1
7
MSB
54
6
7
2072
2073
Data Byte 256
54
6
2074
2075
1
32
2076
2077
2078
3210
03
2079
PRELIMINARY (May, 2007, Version 0.4) 16 AMIC Technology Corp.
Page 18
A25L40P Series
Sector Erase (SE)
The Sector Erase (SE) instruction sets all bits to 1 (FFh).
Before it can be accepted, a Write Enable (WREN) instruction
must previously have been executed. After the Write Enable
(WREN) instruction has been decoded, the device sets the
Write Enable Latch (WEL).
The Sector Erase (SE) instruction is entered by driving Chip
Select (
Data Input (D). Chip Select (
entire duration of the sequence.
The instruction sequence is shown in Figure 13. Chip Select
(
code has been latched in, otherwise the Sector Erase
S
) Low, followed by the instruction code on Serial
S
) must be driven Low for the
S
) must be driven High after the eighth bit of the instruction
Figure 13. Sector Erase (SE) Instruction Sequence
S
6
C
Instruction
instruction is not executed. As soon as Chip Select (
driven High, the self-timed Sector Erase cycle (whose
duration is t
progress, the Status Register may be read to check the value
of the Write In Progress (WIP) bit. The Write In Progress
(WIP) bit is 1 during the self-timed Sector Erase cycle, and is
0 when it is completed. At some unspecified time before the
cycle is completed, the Write Enable Latch (WEL) bit is reset.
The Sector Erase (SE) instruction is executed only if all Block
Protect (BP2, BP1, BP0) bits are 0. The Sector Erase (SE)
instruction is ignored if one, or more, sectors are protected.
) is initiated. While the Sector Erase cycle is in
BE
8109012345
7
24-Bit Address
28 29 30 31
S
) is
22
23
21
D
23
MSB
3
210
0
Notes: Address bits A23 to A19 are Don’t Care.
PRELIMINARY (May, 2007, Version 0.4) 17 AMIC Technology Corp.
Page 19
A25L40P Series
Bulk Erase (BE)
The Bulk Erase (BE) instruction sets all bits to 1 (FFh). Before
it can be accepted, a Write Enable (WREN) instruction must
previously have been executed. After the Write Enable
(WREN) instruction has been decoded, the device sets the
Write Enable Latch (WEL).
The Bulk Erase (BE) instruction is entered by driving Chip
Select (
Data Input (D). Chip Select (
entire duration of the sequence.
The instruction sequence is shown in Figure 14. Chip Select
(
code has been latched in, otherwise the Bulk Erase instruction
S
) Low, followed by the instruction code on Serial
S
) must be driven Low for the
S
) must be driven High after the eighth bit of the instruction
is not executed. As soon as Chip Select (
the self-timed Bulk Erase cycle (whose duration is t
initiated. While the Bulk Erase cycle is in progress, the Status
Register may be read to check the value of the Write In
Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during
the self-timed Bulk Erase cycle, and is 0 when it is completed.
At some unspecified time before the cycle is completed, the
Write Enable Latch (WEL) bit is reset.
The Bulk Erase (BE) instruction is executed only if all Block
Protect (BP2, BP1, BP0) bits are 0. The Bulk Erase (BE)
instruction is ignored if one, or more, sectors are protected.
S
) is driven High,
Figure 14. Bulk Erase (BE) Instruction Sequence
S
1
0
C
3
2
4567
BE
) is
Instruction
D
Notes: Address bits A23 to A19 are Don’t Care.
PRELIMINARY (May, 2007, Version 0.4) 18 AMIC Technology Corp.
Page 20
A25L40P Series
Deep Power-d own (DP)
Executing the Deep Power-down (DP) instruction is the only
way to put the device in the lowest consumption mode (the
Deep Power-down mode). It can also be used as an extra
software protection mechanism, while the device is not in
active use, since in this mode, the device ignores all Write,
Program and Erase instructions.
S
Driving Chip Select (
the device in the Standby mode (if there is no internal cycle
currently in progress). But this mode is not the Deep
Power-down mode. The Deep Power-down mode can only be
entered by executing the Deep Power-down (DP) instruction,
to reduce the standby current (from I
DC Characteristics Table.).
Once the device has entered the Deep Power-down mode, all
instructions are ignored except the Release from Deep
Power-down and Read Electronic Signature (RES) instruction.
This releases the device from this mode. The Release from
Deep Power-down and Read Electronic Signature (RES)
instruction also allows the Electronic Signature of the device
to be output on Serial Data Output (Q).
) High deselects the device, and puts
to I
CC1
, as specified in
CC2
The Deep Power-down mode automatically stops at
Power-down, and the device always Powers-up in the
Standby mode.
The Deep Power-down (DP) instruction is entered by driving
S
Chip Select (
Serial Data Input (D). Chip Select (
the entire duration of the sequence. The instruction sequence
is shown in Figure 15.
Chip Select (
instruction code has been latched in, otherwise the Deep
Power-down (DP) instruction is not executed. As soon as
Chip Select (
before the supply current is reduced to I
Power-down mode is entered.
Any Deep Power-down (DP) instruction, while an Erase,
Program or Write cycle is in progress, is rejected without
having any effects on the cycle that is in progress.
) Low, followed by the instruction code on
S
) must be driven Low for
S
) must be driven High after the eighth bit of the
S
) is driven High, it requires a delay of tDP
and the Deep
CC2
Figure 15. Deep Power-down (DP) Instruction Sequence
S
t
1
0
C
D
3
2
4567
Instruction
DP
Stand-by Mode Deep Power-down Mode
PRELIMINARY (May, 2007, Version 0.4) 19 AMIC Technology Corp.
Page 21
A25L40P Series
Read Device Identification (RDID)
The Read Identification (RDID) instruction allows the 8-bit
manufacturer identification code to be read, followed by two
bytes of device identification. The manufacturer identification
is assigned by JEDEC, and has the value 37h, plus the
continuation identification for AMIC Technology. The device
identification is assigned by the device manufacturer, and
indicates the memory in the first bytes (20h), and the memory
capacity of the device in the second byte (13h).
The Device Identification of memory capacity is 13h.
Any Read Identification (RDID) instruction while an Erase, or
Program cycle is in progress, is not decoded, and has no
effect on the cycle that is in progress.
S
The device is first selected by driving Chip Select (
) Low.
Then, the 8-bit instruction code for the instruction is shifted in.
This is followed by the 32-bit device identification, stored in
the memory, being shifted out on Serial Data Output (Q),
each bit being shifted out during the falling edge of Serial
Clock (C).
The instruction sequence is shown in Figure 16. The Read
Identification (RDID) instruction is terminated by driving Chip
S
Select (
) High at any time during data output.
When Chip Select (S) is driven High, the device is put in the
Stand-by Power mode. Once in the Stand-by Power mode,
the device waits to be selected, so that it can receive, decode
and execute instructions.
Table 6. Read Identification (READ_ID) Data-Out Sequence
Manufacture Identification Device Identification
Continuation ID Manufacture ID Memory Type Memory Capacity
7Fh 37h 20h 13h
Figure 16. Read Identification (RDID) Data-Out Sequence
S
810901 2 3 4 5 6 7 21 3022 23 24 25 26 29 31
C
Instruction
D
Q
High Impedance
313029
Continuation ID
13 1514 16 17 18 3332 34 3837 39
262524
232221
Manufacture ID Memory Type
181716
15 14 13 10 9 8
65 2107
Memory Capacity
PRELIMINARY (May, 2007, Version 0.4) 20 AMIC Technology Corp.
Page 22
A25L40P Series
Release from Deep Power-down and Read
Electronic Signature (RES)
Once the device has entered the Deep Power-down mode,
all instructions are ignored except the Release from Deep
Power-down and Read Electronic Signature (RES)
instruction. Executing this instruction takes the device out of
the Deep Power-down mode.
The instruction can also be used to read, on Serial Data
Output (Q), the 8-bit Electronic Signature, whose value for
the A25L40P is 12h.
Except while an Erase, Program or Write Status Register
cycle is in progress, the Release from Deep Power-down and
Read Electronic Signature (RES) instruction always provides
access to the 8-bit Electronic Signature of the device, and
can be applied even if the Deep Power-down mode has not
been entered.
Any Release from Deep Power-down and Read Electronic
Signature (RES) instruction while an Erase, Program or Write
Status Register cycle is in progress, is not decoded, and has
no effect on the cycle that is in progress.
S
The device is first selected by driving Chip Select (
The instruction code is followed by 3 dummy bytes, each bit
being latched-in on Serial Data Input (D) during the rising
) Low.
edge of Serial Clock (C). Then, the 8-bit Electronic Signature,
stored in the memory, is shifted out on Serial Data Output (Q),
each bit being shifted out during the falling edge of Serial
Clock (C).
The instruction sequence is shown in Figure 17.
The Release from Deep Power-down and Read Electronic
Signature (RES) instruction is terminated by driving Chip
Select (S) High after the Electronic Signature has been read
at least once. Sending additional clock cycles on Serial Clock
S
(C), while Chip Select (
Electronic Signature to be output repeatedly.
S
When Chip Select (
Stand-by Power mode. If the device was not previously in the
Deep Power-down mode, the transition to the Stand-by
Power mode is immediate. If the device was previously in the
Deep Power-down mode, though, the transition to the Stand-
by Power mode is delayed by t
must remain High for at least t
Characteristics Table . Once in the Stand-by Power mode,
the device waits to be selected, so that it can receive, decode
and execute instructions.
) is driven High, the device is put in the
) is driven Low, cause the
, and Chip Select (S)
RES2
(max), as specified in AC
RES2
Figure 17. Release from Deep Power-down and Read Electronic Signature (RES) Instruction Sequence and
Data-Out Sequence
S
810901234567
C
Instruction
D
Q
Note: The value of the 8-bit Electronic Signature, for the A25L40P, is 12h.
High Impedance
3 Dummy Bytes
232221
MSB
28 29 30 313233 34 35 36 37 38
210
3
6
7
MSB
54
32
10
t
RES2
Stand-by ModeDeep Power-down Mode
PRELIMINARY (May, 2007, Version 0.4) 21 AMIC Technology Corp.
Page 23
A25L40P Series
Figure 18. Release from Deep Power-down (RES) Instruction Sequence
S
t
1
C
D
Q
0
High Impedance
3
2
456 7
Instruction
RES1
Stand-by ModeDeep Power-down Mode
Driving Chip Select (S) High after the 8-bit instruction byte
has been received by the device, but before the whole of the
8-bit Electronic Signature has been transmitted for the first
time (as shown in Figure 18.), still insures that the device is
put into Stand-by Power mode. If the device was not previously in the Deep Power-down mode, the transition to the
Stand-by Power mode is immediate. If the device was
previously in the Deep Power-down mode, though, the
transition to the Stand-by Power mode is delayed by t
S
and Chip Select (
as specified in AC Characteristics Table. Once in the
Stand-by Power mode, the device waits to be selected, so
that it can receive, decode and execute instructions.
) must remain High for at least t
RES1
RES1
(max),
,
PRELIMINARY (May, 2007, Version 0.4) 22 AMIC Technology Corp.
Page 24
A25L40P Series
POWER-UP AND POWER-DOWN
At Power-up and Power-down, the device must not be
S
selected (that is Chip Select (
) must follow the voltage
applied on VCC) until VCC reaches the correct value:
V
(min) at Power-up, and then for a further delay of t
CC
VSL
VSS at Power-down
S
Usually a simple pull-up resistor on Chip Select (
) can be
used to insure safe and proper Power-up and Power-down.
To avoid data corruption and inadvertent write operations
during power up, a Power On Reset (POR) circuit is included.
The logic inside the device is held reset while VCC is less than
the POR threshold value, V
– all operations are disabled,
WI
and the device does not respond to any instruction.
Moreover, the device ignores all Write Enable (WREN), Page
Program (PP), Sector Erase (SE), Bulk Erase (BE) and Write
Status Register (WRSR) instructions until a time delay of t
PUW
has elapsed after the moment that VCC rises above the VWI
threshold. However, the correct operation of the device is not
guaranteed if, by this time, V
is still below VCC(min). No
CC
Write Status Register, Program or Erase instructions should
be sent until the later of:
t
- t
These values are specified in Table 7.
If the delay, t
V
even if the t
At Power-up, the device is in the following state:
The device is in the Standby mode (not the Deep
The Write Enable Latch (WEL) bit is reset.
Normal precautions must be taken for supply rail decoupling,
to stabilize the V
have the V
the package pins. (Generally, this capacitor is of the order of
0.1µF).
At Power-down, when V
to below the POR threshold value, V
disabled and the device does not respond to any instruction.
(The designer needs to be aware that if a Power-down occurs
while a Write, Program or Erase cycle is in progress, some
data corruption can result.)
after VCC passed the VWI threshold
PUW
afterVCC passed the VCC(min) level
VSL
L, has elapsed, after V
(min), the device can be selected for READ instructions
CC
VS
delay is not yet fully elapsed.
PUW
has risen above
CC
Power-down mode).
feed. Each device in a system should
CC
rail decoupled by a suitable capacitor close to
CC
drops from the operating voltage,
CC
, all operations are
WI
Figure 19. Power-up Timing
V
CC
VCC(max)
VCC(min)
t
PU
Full Device Access
time
PRELIMINARY (May, 2007, Version 0.4) 23 AMIC Technology Corp.
Page 25
A25L40P Series
Table 7. Power-Up Timing
Symbol Parameter Min. Max. Unit
VCC(min) VCC (minimum) 2.7 V
tPU VCC (min) to device operation 10 ms
Note: These parameters are characterized only.
INITIAL DELIVERY STATE
The device is delivered with the memory array erased: all bits are set to 1 (each byte contains FFh). The Status Register contains
00h (all Status Register bits are 0).
PRELIMINARY (May, 2007, Version 0.4) 24 AMIC Technology Corp.
Page 26
A25L40P Series
Absolute Maximum Ratings*
Storage Temperature (TSTG) . . . . . . . . . . -65°C to + 150°C
Lead Temperature during Soldering (Note 1)
D.C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.6V to VCC+0.6V
Transient Voltage (<20ns) on Any Pin to Ground Potential . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -2.0V to VCC+2.0V
Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . -0.6V to +4.0V
Electrostatic Discharge Voltage (Human Body model)
(VESD) (Note 2) . . . . . . . . . . . . . . . . . . . -2000V to 2000V
Notes:
1. Compliant with JEDEC Std J-STD-020B (for small body,
Sn-Pb or Pb assembly).
2. JEDEC Std JESD22-A114A (C1=100 pF, R1=1500 Ω ,
R2=500Ω)
*Comments
Stressing the device above the rating listed in the Absolute
Maximum Ratings" table may cause permanent damage to
the device. These are stress ratings only and operation of
the device at these or any other conditions above those
indicated in the Operating sections of this specification is not
implied. Exposure to Absolute Maximum Rating conditions
for extended periods may affect device reliability. Refer also
to the AMIC SURE Program and other relevant quality documents.
DC AND AC PARAMETERS
This section summarizes the operating and measurement
conditions, and the DC and AC characteristics of the device.
The parameters in the DC and AC Characteristic tables that
follow are derived from tests performed under the
Measurement Conditions summarized in the relevant tables.
Designers should check that the operating conditions in their
circuit match the measurement conditions when relying on
the quoted parameters.
Table 7. Operating Conditions
Symbol Parameter Min. Max. Unit
VCC Supply Voltage 2.7 3.6 V
TA Ambient Operating Temperature –40 85 °C
Table 8. Data Retention and Endurance
Parameter Condition Min. Max. Unit
Erase/Program Cycles At 85°C 100,000 Cycles per sector
Data Retention At 85°C 20 Years
Note: 1. This is preliminary data
Table 9. Capacitance
Symbol Parameter Test Condition Min. Max. Unit
C
Output Capacitance (Q) V
OUT
CIN Input Capacitance (other pins) V
Note: Sampled only, not 100% tested, at TA=25°C and a frequency of 33 MHz.
OUT
IN
= 0V
= 0V
8 pF
6 pF
PRELIMINARY (May, 2007, Version 0.4) 25 AMIC Technology Corp.
Page 27
A25L40P Series
Table 10. DC Characteristics
Symbol Parameter Test Condition Min. Max. Unit
ILI Input Leakage Current ± 2 µA
ILO Output Leakage Current ± 2 µA
I
Standby Current
CC1
I
Deep Power-down Current
CC2
I
Operating Current (READ)
CC3
I
Operating Current (PP)
CC4
I
Operating Current (WRSR)
CC5
I
Operating Current (SE)
CC6
I
Operating Current (BE)
CC7
VIL Input Low Voltage –0.5 0.3VCC V
VIH Input High Voltage 0.7VCC VCC+0.4 V
VOL Output Low Voltage IOL = 1.6mA 0.4 V
C= 0.1VCC / 0.9.VCC at 50MHz, Q = open 20 mA
C= 0.1V
S
= VCC, VIN = VSS or VCC
S
= VCC, VIN = VSS or VCC
/ 0.9.VCC at 33MHz, Q = open 15 mA
CC
S
= VCC
S
= VCC
S
= VCC
S
= VCC
50 µA
10 µA
15 mA
15 mA
15 mA
15 mA
VOH Output High Voltage IOH = –100µA VCC–0.2 V
Note: 1. This is preliminary data at 85°C
Table 11.
Symbol Alt. Parameter Min. Typ. Max. Unit
Note: 1. At 85°C
Instruction Times
tW Write Status Register Cycle Time 5 15 ms
tPP Page Program Cycle Time 3 5 ms
tSE Sector Erase Cycle Time 1 3 s
tBE Bulk Erase Cycle Time 4.5 10 s
2. This is preliminary data
Table 12. AC Measurement Conditions
Symbol Parameter Min. Max. Unit
CL Load Capacitance 30 pF
Input Rise and Fall Times 5 ns
Input Pulse Voltages 0.2VCC to 0.8VCC V
Input Timing Reference Voltages 0.3VCC to 0.7VCC V
Output Timing Reference Voltages VCC / 2 V
Note: Output Hi-Z is defined as the point where data out is no longer driven.
PRELIMINARY (May, 2007, Version 0.4) 26 AMIC Technology Corp.
Page 28
A25L40P Series
Figure 20. AC Measurement I/O Waveform
Input Levels Input and Output
Timing Reference Levels
0.8V
CC
0.2V
CC
0.7V
0.5V
0.3V
CC
CC
CC
PRELIMINARY (May, 2007, Version 0.4) 27 AMIC Technology Corp.
Page 29
A25L40P Series
Table 13. AC Characteristics
Symbol
fC f
fR Clock Frequency for READ instructions D.C. 50 MHz
tCH 1
tCL 1
t
2
CLCH
t
2
CHCL
t
t
SLCH
t
CHSL
t
t
DVCH
t
t
CHDX
t
CHSH
t
SHCH
t
t
SHSL
t
2
SHQZ
t
t
CLQV
t
t
CLQX
t
HLCH
t
CHHH
t
HOLD Setup Time (relative to C) 5 ns
HHCH
t
HOLD Hold Time (relative to C) 5 ns
CHHL
t
2
HHQX
t
2
HLQZ
4
t
WHSL
t
4
SHWL
tDP 2
t
2
RES1
t
2
RES2
tW Write Status Register Cycle Time 100 300 ms
tpp Page Program Cycle Time 3 5 ms
tSE Sector Erase Cycle Time 1 3 s
tBE Bulk Erase Cycle Time 6 12 s
Note: 1. tCH + tCL must be greater than or equal to 1/ fC
2. Value guaranteed by characterization, not 100% tested in production.
3. Expressed as a slew-rate.
4. Only applicable as a constraint for a WRSR instruction when SRWD is set at 1.
5. VCC range 3.0V~3.6V for 85MHz.
Alt. Parameter Min. Typ. Max. Unit
Clock Frequency for the following instructions: FAST_READ,
C
D.C.
75/85
PP, SE, BE, DP, RES, RDID, WREN, WRDI, RDSR, WRSR
Clock High Time 6 ns
t
CLH
Clock Low Time 5 ns
t
CLL
Clock Rise Time3 (peak to peak)
Clock Fall Time3 (peak to peak)
CSS
DSU
DH
CSH
t
DIS
V
HO
t
LZ
t
HZ
S
Active Setup Time (relative to C)
S
Not Active Hold Time (relative to C)
Data In Setup Time 5 ns
Data In Hold Time 5 ns
S
Active Hold Time (relative to C)
S
Not Active Setup Time (relative to C)
S
Deselect Time
Output Disable Time 8 ns
Clock Low to Output Valid 8 ns
Output Hold Time 0 ns
Setup Time (relative to C)
HOLD
Hold Time (relative to C)
HOLD
HOLD to Output Low-Z 8 ns
to Output High-Z
HOLD
Write Protect Setup Time 20 ns
0.1 V/ns
0.1 V/ns
5 ns
5 ns
5 ns
5 ns
100 ns
5 ns
5 ns
8 ns
Write Protect Hold Time 100 ns
S
High to Deep Power-down Mode
S
High to Standby Mode without Electronic Signature Read
S
High to Standby Mode with Electronic Signature Read
3 µs
30 µs
30 µs
5
MHz
PRELIMINARY (May, 2007, Version 0.4) 28 AMIC Technology Corp.
Page 30
A25L40P Series
Figure 21. Serial Input Timing
tSHSL
S
tSLCHtCHSL
C
tDVCH
tCHDX
D
Q
High Impedance
tCHSH
tCLCH
LSB INMSB IN
tSHCH
tCHCL
Figure 22. Write Protect Setup and Hold Timing during WRSR when SRWD=1
W
tWHSL
tSHWL
S
C
D
Q
High Impedance
PRELIMINARY (May, 2007, Version 0.4) 29 AMIC Technology Corp.
Page 31
A25L40P Series
Figure 23. Hold Timing
S
tHLCH
tCHHL
C
tCHHH
D
tHLQZ
Q
HOLD
Figure 24. Output Timing
tHHCH
tHHQX
S
tCH
C
ADDR.LSB IN
D
tCLQV
tCLQX
Q
tCLQX
tCLQV
tCL
LSB OUT
tQLQH
tQHQL
tSHQZ
PRELIMINARY (May, 2007, Version 0.4) 30 AMIC Technology Corp.
Page 32
A25L40P Series
Part Numbering Scheme
Package Material
Blank: normal
F: PB free
Temperature*
Package
M = 209 mil SOP 8
N = SOP 16
O = 150 mil SOP 8
Q = QFN 8
Boot Sector
T = Top type
U = Bottom type
* Optional
Device Version*
Device Function
P = Page Program &
Sector Erase
Device Density
05 = 512 Kbit
40 = 4 Mbit
80 = 8 Mbit
16 = 16 Mbit
Device Voltage
L = 2.7-3.6V
Device Type
A25 = AMIC Serial Flash
PRELIMINARY (May, 2007, Version 0.4) 31 AMIC Technology Corp.
Page 33
A25L40P Series
Ordering Information
Part No.
A25L40PT-F
A25L40PT-UF
A25L40PTO-F
A25L40PTO-UF
A25L40PTM-F
A25L40PTM-UF
A25L40PTN-F
A25L40PTN-UF
A25L40PTQ-F
A25L40PTQ-UF
Speed (MHz)
(2.7V~3.6V)/
(3.0V~3.6V)
75/85 20 15 50
Active Read
Current
Typ. (mA)
Program/Erase
Current
Typ. (mA)
Standby Current
Typ. (μA)
Package
8 Pin Pb-Free DIP (300 mil)
8 Pin Pb-Free DIP (300 mil)
8 Pin Pb-Free SOP (150 mil)
8 Pin Pb-Free SOP (150 mil)
8 Pb-Free Pin SOP (209mil)
8 Pb-Free Pin SOP (209mil)
16 Pin Pb-Free SOP
16 Pin Pb-Free SOP
8 Pin Pb-Free QFP
8 Pin Pb-Free QFP
A25L40PU-F
A25L40PU-UF
A25L40PUO-F
A25L40PUO-UF
A25L40PUM-F
75/85 20 15 50
A25L40PUM-UF
A25L40PUN-F
A25L40PUN-UF
A25L40PUQ-F
A25L40PUQ-UF
-U is for industrial operating temperature range: -40°C ~ +85°C
8 Pin Pb-Free DIP (300 mil)
8 Pin Pb-Free DIP (300 mil)
8 Pin Pb-Free SOP (150 mil)
8 Pin Pb-Free SOP (150 mil)
8 Pb-Free Pin SOP (209mil)
8 Pb-Free Pin SOP (209mil)
16 Pin Pb-Free SOP
16 Pin Pb-Free SOP
8 Pin Pb-Free QFP
8 Pin Pb-Free QFP
PRELIMINARY (May, 2007, Version 0.4) 32 AMIC Technology Corp.
Page 34
A25L40P Series
Package Information
P-DIP 8L Outline Dimensions
unit: inches/mm
Dimensions in inches Dimensions in mm
Symbol
A - - 0.180 - - 4.57
A1 0.015 - - 0.38 - A2 0.128 0.130 0.136 3.25 3.30 3.45
B 0.014 0.018 0.022 0.36 0.46 0.56
B1 0.050 0.060 0.070 1.27 1.52 1.78
B2 0.032 0.039 0.046 0.81 0.99 1.17
C 0.008 0.010 0.013 0.20 0.25 0.33
D 0.350 0.360 0.370 8.89 9.14 9.40
E 0.290 0.300 0.315 7.37 7.62 8.00
E1 0.254 0.260 0.266 6.45 6.60 6.76
e1 - 0.100 - - 2.54 -
L 0.125 - - 3.18 - -
EA 0.345 - 0.385 8.76 - 9.78
S 0.016 0.021 0.026 0.41 0.53 0.66
Min Nom Max Min Nom Max
Notes:
1. Dimension D and E1 do not include mold flash or protrusions.
2. Dimension B
3. Tolerance: ±0.010” (0.25mm) unless otherwise specified.
PRELIMINARY (May, 2007, Version 0.4) 33 AMIC Technology Corp.
1 does not include dambar protrusion.
Page 35
A25L40P Series
Package Information
SOP 8L (150mil) Outline Dimensions
e
D
unit: mm
E
HE
b
A
A1
L
°° 8~0
Symbol
A 1.35~1.75
A1
b 0.33~0.51
D 4.7~5.0
E 3.80~4.00
e 1.27 BSC
HE 5.80~6.20
L 0.40~1.27
Dimensions in mm
0.10~0.25
Notes:
1. Maximum allowable mold flash is 0.15mm.
2. Complies with JEDEC publication 95 MS –012 AA.
3. All linear dimensions are in millimeters (max/min).
4. Coplanarity: Max. 0.1mm
PRELIMINARY (May, 2007, Version 0.4) 34 AMIC Technology Corp.
Page 36
A25L40P Series
Package Information
SOP 8L (209mil) Outline Dimensions unit: mm
85
E
1
e
4
D
A
A2
GAGE PLANE
b
A1
SEATING PLANE
0.25
E1
C
θ
L
Symbol
A
A1 0.05
A2 1.70 1.80 1.91
b 0.35 0.42 0.48
C 0.19 0.20 0.25
D
E 7.70 7.90 8.10
E1 5.18 5.28 5.38
e 1.27 BSC
L 0.50 0.65 0.80
θ
Dimensions in mm
Min Nom Max
1.75 1.95
0.15 0.25
5.13
0°
5.23 5.33
-
2.16
8°
Notes:
Maximum allowable mold flash is 0.15mm at the package
ends and 0.25mm between leads
PRELIMINARY (May, 2007, Version 0.4) 35 AMIC Technology Corp.
Page 37
A25L40P Series
Package Information
SOP 16L (300mil) Outline Dimensions unit: inch
0.008 typ.
0.016 typ.
D
16
9
81
0.050 typ.
E
H
0.02 x 45
A
SEATING PLANE
D
0.004max.
A1
θ
L
Symbol
A
A1
D 0.398 0.413
E 0.291 0.299
H 0.394 0.419
L 0.016 0.050
θ
Notes:
1. Dimensions “D” does not include mold flash,
protrusions or gate burrs.
2. Dimensions “E” does not include interlead flash, or
protrusions.
Dimensions in inch
Min Max
0.093
0.004 0.012
0°
0.104
8°
PRELIMINARY (May, 2007, Version 0.4) 36 AMIC Technology Corp.
Page 38
A25L40P Series
Package Information
QFN 8L (6 X 5 X 0.8mm) Outline Dimensions unit: mm/mil
0.25 C
14
D
Pin1 ID Area
58
E
0.25 C
D2
e
1432
C0.30
8
b
L
567
E2
A1
Seating Plane
Symbol
A 0.700 0.750 0.800 27.6 29.5 31.5
A1 0.000 0.020 0.050 0.0 0.8 2.0
A3 0.203 REF 8.0 REF
b 0.350 0.400 0.480 13.8 15.8 18.9
D 5.900 6.000 6.100 232.3 236.2 240.2
D2 3.200 3.400 3.600 126.0 133.9 141.7
E 4.900 5.000 5.100 192.9 196.9 200.8
E2 3.800 4.000 4.200 149.6 157.5 165.4
L 0.500 0.600 0.750 19.7 23.6 29.5
e
y 0 - 0.080 0 - 3.2
Note:
1. Controlling dimension: millimeters
2. Leadframe thickness is 0.203mm (8mil)
0.10// C
A
y C
A3
Dimensions in mm Dimensions in mil
Min Nom Max Min Nom Max
1.270 BSC 50.0 BSC
PRELIMINARY (May, 2007, Version 0.4) 37 AMIC Technology Corp.
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