0.2 Delete A23L0616/A23L06161/A23L06162-100 part June 20, 2005
Change t
AOE from 35ns to 30ns(max.) at –70 grade May 23, 2005
ACE from 70ns to 75ns(max.)
PRELIMINARY (June, 2005, Version 0.2) AMIC Technology, Corp.
Page 2
A23L0616/A23L06161/A23L06162 Series
Preliminary 1M X 16 / 2M X 8 BIT CMOS MASK ROM
Features
1M x 16 bit or 2M x 8 bit organization
Supply voltage range: 2.7V~3.6V
Access time: 70 ns (max.)/2.7V~3.6V
Current: Operating: 40mA (typ.)/3.3V
Standby: 10µA (typ.)/3.3V
Three-state outputs for wired-OR expansion
Full static operation
Pin Configurations
SOP TSOP (forward type)
1
44
NC
A18
A17
CE
GND
OE
O10
1
2
3
4
A7
5
A6
6
A5
7
A4
A3
A2
A1
A0
O0
O1
O9
O2
O3
A23L0616M
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22O11
NC
43
A19
A8
42
A9
41
A10
40
A11
39
A12
38
A13
37
A14
36
A15
35
34
A16
33
BYTE
32
GND
31
O15/A-1
O7
30
O14O8
29
28
O6
27
O13
26
O5
25
O12
24
O4
TSOP (reverse type)
23
VCC
BYTE
A16
2
A15
3
A14
4
A13
5
A12
6
A11
7
A10
8
9
A9
A8
10
A19
11
GND
12
NC
13
A18
14
A17
15
A7
16
17
A6
18
A5
19
A4
20
A3
21
A2
22
A1
23
A0
2425
CE
GND
O15/A-1
GND
O14
O13
O12
VCC
VCC
NC
O11
O10
OE
GND
GND
48
47
46
O7
45
44
O6
43
42
O5
41
40
O4
39
38
37
36
35
O3
34
33
32
O2
31
O9
30
O1
29
O8
28
O0
27
26
25
All inputs and outputs are directly TTL-compatible
Flash memory pinout compatible with AMD
(A23L06161) and Intel (A23L06162)
Available in 44-pin SOP, 48-pin TSOP (forward,
reverse type and flash memory’s pinouts compatible)
packages
48
GND
GND
47
46
O15/A-1
45
O7
44
O14
43
O6
42
O13
41
O5
40
O12
39
O4
38
VCC
37
A23L0616V
A23L0616R
VCC
36
NC
35
O11
34
O3
33O10
32O2
31
O9
30
O1
29
O8
28
O0
27
OE
26
GND
GND
1
BYTE
A16
2
A15
3
A14
4
5
A13
6
A12
7
A11
8
A10
9
A9
10
A8
11
A19
12
GND
13
NC
14
A18
15
A17
16A7
17A6
18
A5
19
A4
20
A3
21
A2
22
A1
23
A0
24
CE
PRELIMINARY (June, 2005, Version 0.2) 1 AMIC Technology, Corp.
Page 3
A23L0616/A23L06161/A23L06162 Series
Pin Configurations (continued)
TSOP (forward type)
A15
A14
A13
A12
A11
A10
A19
NC
NC
NC
NC
NC
NC
A18
A17
1
2
3
4
5
6
7
A9
8
A8
9
10
11
12
13
14
15
16
17
18
A7
19
A6
20
A5
21
A4
22
A3
23
A2
2425
A1
A23L06161V
A16
48
47
BYTE
46
GND
45
O15/A-1
44
O7
43
O14
42
O6
41
O13
40
O5
39
O12
38
O4
37
VCC
36
O11
35
O3
34
O10
33O2
32O9
31
O1
30
O8
29
O0
28
OE
27
GND
26
CE
A0
TSOP (forward type)
1
A15
A14
2
A13
3
A12
4
A11
5
A10
6
A9
7
A8
8
9
NC
NC
10
NC
11
NC
12
NC
13
NC
14
A19
15
A18
16
17
A17
18
A7
19
A6
20
A5
21
A4
22
A3
23
A2
2425
A1
A23L06162V
48
A16
47
VCC
46
GND
45
O15
44
O7
43
O14
42
O6
41
O13
40
O5
39
O12
38
O4
37
VCC
36
O11
35
O3
34
O10
33O2
32O9
31
O1
30
O8
29
O0
28
OE
27
GND
26
CE
A0
PRELIMINARY (June, 2005, Version 0.2) 2 AMIC Technology, Corp.
Page 4
A23L0616/A23L06161/A23L06162 Series
Block Diagram
(A-1) A0 - A19
ADDRESS
INPUTS
BYTE
CE
OE
ROW
DECODER
DRIVER
COLUMN
DECODER
DRIVER
POWER-DOWN
DOWN OR
OUTPUT
ENABLE
CIRCUITRY
BYTE
CIRCUITRY
MEMORY CELL
ARRAY
COLUMN SELECTOR CIRCUITRY
O0
O1
O2
O3
O4
O5
O6
O7
(O8)
(O9)
(O10)
(O11)
(O12)
(O13)
(O14)
(O15)
PRELIMINARY (June, 2005, Version 0.2) 3 AMIC Technology, Corp.
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to this device.
These are stress ratings only. Functional operation of this
device at these or any other conditions above those
indicated in the operational sections of this specification is
not implied or intended. Exposure to the absolute maximum
rating conditions for extended periods may affect device
reliability.
DC Electrical Characteristics
(TA = 0°C to + 70°C, VCC = 2.7V~3.6V, GND = 0V for -70)
Symbol Parameter Min. Max. UnitConditions Note
VOHOutput High Voltage 2.4 V IOH = -0.4mA (3V)
VOLOutput Low Voltage 0.4 V IOL = 1.6mA (3V)
VlHInput High Voltage 2.2 VCC + 0.3V
VlLInput Low Voltage -0.3 0.6 V
⎢lLI⎥
Input Leakage Current
+10
µA
VCC = max.
V
IN = VCC to GND
⎢lLO⎥
ICCOperating Supply Current 60 mA tCYC = min. 2
ISBStandby Supply Current (TTL) 1.5 mA
ISB1Standby Supply Current (CMOS) 30
Output Leakage Current
+10
µA
µA
VCC = max.
V
OUT = VCC to GND
CE = VIH
CE ≥ VCC - 0.2V
1
PRELIMINARY (June, 2005, Version 0.2) 5 AMIC Technology, Corp.
Page 7
A23L0616/A23L06161/A23L06162 Series
Capacitance
Symbol Parameter Min. Max. Unit Test Conditions Note
CI Input Capacitance 10 pF
CO Output Capacitance 10 pF
A = 25°C
T
f = 1.0MHz
AC Characteristics (TA = 0°C to +70°C, VCC = 2.7V~3.6V for -70, GND = 0V)
Symbol Parameter
tCYC Cycle Time 70 ns
tAAAddress Access Time 70 ns
tACEChip Enable Access Time 75 ns
tAOEOutput Enable Access Time 30 ns
tOHOutput Hold after Address Change 10 ns
tLZOutput Low Z Delay 10 ns 4, 6
tHZOutput High Z Delay* 20 ns 5, 6
A23L0616/A23L06161/
A23L06162-70
Unit Note
Min. Max.
3
* tHZ is specified from either OE or CE going disabled, whichever occurs first.
Notes:
OE / CE = VIH (Output is unloaded)
1.
IN = VIH/VIL, OE / CE = VIL (Output is unloaded)
2. V
3. This parameter is periodically sampled and is not 100% tested. All pins, except pins under test, are tied to AC ground.
4. Output LOW impedance delay (t
5. Output HIGH impedance delay (t
LZ) is measured from CE or OE going active.
HZ) is measured from CE or OE going inactive.
6. This parameter is sampled and not 100% tested.
PRELIMINARY (June, 2005, Version 0.2) 6 AMIC Technology, Corp.
Page 8
A23L0616/A23L06161/A23L06162 Series
Timing Waveforms
Propagation Delay from Address (CE = Active, OE= Active)
t
CYC
ADDRESS
INPUTS
t
AA
VALID
t
OH
DATA OUT
VALID
Propagation Delay from Chip Enable or Output Enable (Address Valid)