Page 1
p
查询AO4422供应商
AO4422
N-Channel Enhancement Mode Field Effect Transistor
Jan 2003
General Description
The AO4422 uses advanced trench technology to
provide excellent R
device is suitable for use as a load switch or in PWM
applications. The source leads are separated to allow
a Kelvin connection to the source, which may be
and low gate charge. This
DS(ON)
Features
VDS (V) = 30V
I
= 11A
D
R
DS(ON)
R
DS(ON)
used to bypass the source inductance.
D
S
S
S
G
SOIC-8
D
D
D
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Drain-Source Voltage
Gate-Source Voltage
=25°C
B
T
A
T
A
T
A
T
A
=70°C
=25°C
=70°C
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
Junction and Storage Temperature Range
V
DS
V
GS
I
D
I
DM
P
D
TJ, T
STG
< 15mΩ (VGS = 10V)
< 24mΩ (VGS = 4.5V)
Maximum UnitsParameter
30
11
9.3
50
3
2.1
-55 to 150
V
V±20
A
W
°C
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
A
A
t ≤ 10s
Steady-State
Steady-State
Symbol Ty
R
θJA
R
θJL
31 40
59 75
16 24
Max
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
Page 2
AO4422
Ω
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Min Typ Max Units
Parameter Conditions
STATIC PARAMETERS
BV
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
I
=250µA, VGS=0V
D
VDS=24V, VGS=0V
VDS=0V, VGS= ±20V
Gate Threshold Voltage VDS=V
On state drain current
VGS=4.5V, VDS=5V
VGS=10V, ID=11A
Static Drain-Source On-Resistance
VGS=4.5V, ID=10A
Forward Transconductance
Diode Forward Voltage
VDS=5V, ID=11A
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
GS ID
=250µA
TJ=55°C
TJ=125°C
30 V
1
5
µA
100 nA
1 1.8 3 V
40 A
12.6 15
16.8 21
19.6 24
mΩ
m
25 S
0.75 1 V
4.3 A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
VGS=0V, VDS=15V, f=1MHz
Reverse Transfer Capacitance
Gate resistance VGS=0V, VDS=0V, f=1MHz
1040 pF
180 pF
110 pF
0.7 Ω
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
VGS=10V, VDS=15V, ID=11A
VGS=10V, VDS=15V, RL=1.35Ω,
R
=3Ω
GEN
IF=11A, dI/dt=100A/µs
IF=11A, dI/dt=100A/µs
19.8 nC
9.8 nC
2.5 nC
3.5 nC
4.5 ns
3.9 ns
17.4 ns
3.2 ns
17.5
ns
7.6 nC
A: The value of R
in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
curve provides a single pulse rating.
θJA
is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value
θJA
is the sum of the thermal impedence from junction to lead R
2
FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
and lead to ambient.
θJL
Alpha & Omega Semiconductor, Ltd.
Page 3
AO4422
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
4V
10V
4.5V
20
15
(A)
D
I
10
3.5V
VGS=3V
5
0
012345
V
(Volts)
DS
Fig 1: On-Region Characteristics
24
)
Ω
(m
DS(ON)
R
22
20
18
16
14
V
=4.5V
GS
VGS=10V
12
10
0 5 10 15 20
I
(A)
D
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
20
16
VDS=5V
12
(A)
D
I
8
125°C
25°C
4
0
1.5 2 2.5 3 3.5 4
V
(Volts)
GS
Figure 2: Transfer Characteristics
1.6
VGS=10V
ID=10A
1.4
VGS=4.5V
1.2
1
Normalized On-Resistance
0.8
0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
60
50
)
40
Ω
ID=10A
(m
30
DS(ON)
R
20
25°C
125°C
10
246810
V
(Volts)
GS
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
1.0E+01
1.0E+00
1.0E-01
(A)
1.0E-02
S
I
1.0E-03
1.0E-04
1.0E-05
125°C
25°C
0.0 0.2 0.4 0.6 0.8 1.0
V
(Volts)
SD
Figure 6: Body-Diode Characteristics
Page 4
AO4422
0.1s
0s
o
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
VDS=15V
ID=11A
6
(Volts)
GS
4
V
2
0
0 4 8 12 16 20
Qg (nC)
Figure 7: Gate-Charge Characteristics
100.0
10.0
R
DS(ON)
limited
100µs
1ms
10ms
(Amps)
D
I
1.0
T
J(Max)
=150°C
TA=25°C
1s
1
DC
0.1
0.1 1 10 100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10µs
1500
1250
C
iss
1000
750
500
Capacitance (pF)
C
oss
250
C
rss
0
0 5 10 15 20 25 30
VDS (Volts)
Figure 8: Capacitance Characteristics
50
T
=150°C
J(Max)
40
TA=25°C
30
20
Power (W)
10
0
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
D=Ton/T
T
J,PK=TA+PDM.ZθJA.RθJA
R
=40°C/W
θJA
1
0.1
Normalized Transient
Thermal Resistance
θJA
Z
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
P
Pulse Width (s)
D
T
n
T
Loading...