
Elektronische Bauelemente
FEATURES
General Purpose Switching and Amplification.
CLASSIFICATION OF h
Product-Rank 8550SST-B 8550SST-C 8550SST-D
Range 85~160 120~200 160~300
FE (1)
PNP Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
8550SST
-1.5A , -40V
TO-92
G
K
H
Emitte
Collector
J
A
D
B
CE
F
Base
REF.
A 4.40 4.70
B 4.30 4.70
C 12.70 D 3.30 3.81
E 0.36 0.56
F 0.36 0.51
G1.27 TYP.
H1.10 J 2.42 2.66
K 0.36 0.76
Collector
Millimete
Min. Max.
ABSOLUTE MAXIMUM RATINGS (T
Parameter Symbol Rating Unit
Collector to Base Voltage V
Collector to Emitter Voltage V
Emitter to Base Voltage V
Collector Current - Continuous IC -1.5 A
Collector Power Dissipation PC 1 W
Thermal Resistance From Junction to Ambient R
Junction, Storage Temperature TJ, T
= 25°C unless otherwise specified)
A
-40 V
CBO
-25 V
CEO
-5 V
EBO
125 °C / W
θJA
150, -55~150 °C
STG
Base
Emitter
ELECTRICAL CHARACTERISTICS (T
Parameter Symbol Min Typ Max Unit Test condition
Collector to Base Breakdown Voltage V
Collector to Emitter Breakdown Voltage V
Emitter to Base Breakdown Voltage V
Collector Cut-Off Current I
Collector Cut-Off Current I
Emitter Cut-Off Current I
DC Current Gain
Collector to Emitter Saturation Voltage V
Base to Emitter Saturation Voltage V
Transition Frequency fT 100 - - MHz VCE= -10V, IC= -50mA, f=30MHz
= 25°C unless otherwise specified)
A
-40 - - V IC= -0.1mA, IE=0
(BR)CBO
-25 - - V IC= -0.1mA, IB=0
(BR)CEO
-5 - - V IE= -0.1mA, IC=0
(BR)EBO
- - -0.1 μA VCB= -40V, IE=0
CBO
- - -0.1 μA VCE= -20V, IB=0
CEO
- - -0.1 μA VEB= -5V, IC=0
EBO
h
85 - 300 VCE= -1V, IC= -100mA
FE (1)
h
40 - -
FE (2)
- - -0.5 V IC= -800mA, IB= -80mA
CE(sat)
- - -1.2 V IC= -800mA, IB= -80mA
BE(sat)
VCE= -1V, IC= -800mA
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
18-Feb-2011 Rev. B Page 1 of 2

Elektronische Bauelemente
RATINGS AND CHARACTERISTIC CURVES
8550SST
-1.5A , -40V
PNP Plastic Encapsulated Transistor
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
18-Feb-2011 Rev. B Page 2 of 2