The L7900 series of three-terminal negative
regulators is available in TO-220, TO-220FP,
TO-3 and D
output voltages, making it useful in a wide range of
applications. These regulators c an provide local
on-card regulation, eliminating t he distribution
problems associated with sin gle point regulation;
furthermore, having the same voltage option as
the L7800 positive standard series, they are
particularly suited for split power supplies. In
addition, the -5.2V is also available for ECL
system. If adequate heat sinking is provided, they
can deliver over 1.5A output current.
Although designed primarily as fixed voltage
regulators, thes e devices can be used with
external components to obtain adjust able voltages
and currents.
SCHEMATIC DIAGRAM
2
PAK packages and several fixed
TO-220
D2PAK
TO-220FP
TO-3
1/16February 2003
Page 2
L7900 SERIE S
ABSOLUTE MAXIMUM RATINGS
SymbolParameter²ValueUnit
V
I
P
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is
not implied.
L7905CL7905CVL7905ACD2TL7905CPL7905CT-5 V
L7952CL7952CVL7952ACD2TL7952CT-5.2 V
L7906CL7906CVL7906ACD2TL7906CPL7906CT-6 V
L7908CL7908CVL7908ACD2TL7908CPL7908CT-8 V
L7912CL7912CVL7912ACD2TL7912CPL7912CT-12 V
L7915CL7915CVL7915ACD2TL7915CPL7915CT-15 V
L7918CL7918CVL7918ACD2TL7918CPL7918CT-18 V
L7920CL7920CVL7920ACD2TL7920CPL7920CT-20 V
L7922CL7922CVL7922ACD2TL7922CT-22 V
L7924CL7924CVL7924ACD2TL7924CPL7924CT-24 V
(*) Available in Tape & Reel with the suffix "-TR".
TEST CIRCUIT
ELECTRICAL CHARACTERISTICS O F L7905C (refer to the test circuits, T
(*) Load and line regulation are specified at constant junction temperature. Changes in VOdue to heating effects must be taken into account
separately. Pulse testingwith low duty cycle is used.
V
= 8 to 20 V
I
V
=-8to-12VTJ= 25°C50
I
= 250 to 750 mATJ= 25°C50
I
O
= -8 to -25 V1.3
V
I
= 25°C100µV
J
= 10 Vf = 120Hz5460dB
I
-4.75-5-5.25V
3/16
Page 4
L7900 SERIE S
ELECTRICAL CHARACTERISTICS O F L7952C (refer to the test circuits, TJ= 0 t o 125°C, VI= -10V,
(*) Load and line regulation are specified at constant junction temperature. Changes in VOdue to heating effects must be taken into account
separately. Pulse testingwith low duty cycle is used.
V
= -9 to -21 V
I
=-9to-12VTJ= 25°C52
V
I
= 250 to 750 mATJ= 25°C52
I
O
= -9 to -25 V1.3
V
I
= 25°C125µV
J
= 10 Vf = 120Hz5460dB
I
-4.95-5.2-5.45V
ELECTRICAL CHARACTERISTICS O F L7906C (refer to the test circuits, TJ= 0 t o 125°C, VI= -11V,
(*) Load and line regulation are specified at constant junction temperature. Changes in VOdue to heating effects must be taken into account
separately. Pulse testingwith low duty cycle is used.
V
= -9.5 to -21.5 V
I
=-9to-15VTJ= 25°C60
V
I
= 250 to 750 mATJ= 25°C60
I
O
= -9.5 to -25 V1.3
V
I
= 25°C144µV
J
= 10 Vf = 120Hz5460dB
I
-5.7-6-6.3V
4/16
Page 5
L7900 SERIE S
ELECTRICAL CHARACTERISTICS O F L7908C (refer to the test circuits, TJ= 0 t o 125°C, VI= -14V,
(*) Line RegulationVI= -10.5 to -25 VTJ= 25°C160mV
∆V
O
(*) Load RegulationIO=5mAto1.5ATJ= 25°C160mV
∆V
O
Quiescent CurrentTJ= 25°C3mA
I
d
Quiescent Current Change IO=5mAto1A0.5mA
∆I
d
/∆T Output Voltage DriftIO= 5 mA-0.6mV/°C
∆V
O
eNOutput Noise VoltageB = 10Hz to 100KHzT
SVRSupply Voltage Rejection∆V
Dropout VoltageIO=1ATJ= 25°C∆VO= 100 mV1.1V
V
d
Short Circuit Current1.5A
I
sc
(*) Load and line regulation are specified at constant junction temperature. Changes in VOdue to heating effects must be taken into account
separately. Pulse testingwith low duty cycle is used.
V
= -11.5 to -23V
I
= -11 to -17 VTJ= 25°C80
V
I
= 250 to 750 mATJ= 25°C80
I
O
= -11.5 to -25V1
V
I
= 25°C175µV
J
= 10 Vf = 120Hz5460dB
I
-7.6-8-8.4V
ELECTRICAL CHARACTERISTICS O F L7912C (refer to the test circuits, TJ= 0 t o 125°C, VI= -19V,
(*) Line RegulationVI= -14.5 to -30 VTJ= 25°C240mV
∆V
O
(*) Load RegulationIO=5mAto1.5ATJ= 25°C240mV
∆V
O
Quiescent CurrentTJ= 25°C3mA
I
d
Quiescent Current Change IO=5mAto1A0.5mA
∆I
d
/∆T Output Voltage DriftIO= 5 mA-0.8mV/°C
∆V
O
eNOutput Noise VoltageB = 10Hz to 100KHzT
SVRSupply Voltage Rejection∆V
Dropout VoltageIO=1ATJ= 25°C∆VO= 100 mV1.1V
V
d
I
Short Circuit Current1.5A
sc
(*) Load and line regulation are specified at constant junction temperature. Changes in VOdue to heating effects must be taken into account
separately. Pulse testingwith low duty cycle is used.
V
= -15.5 to -27 V
I
= -16 to -22 VTJ= 25°C120
V
I
= 250 to 750 mATJ= 25°C120
I
O
= -15 to -30 V1
V
I
= 25°C200µV
J
= 10 Vf = 120Hz5460dB
I
-11.4-12-12.6V
5/16
Page 6
L7900 SERIE S
ELECTRICAL CHARACTERISTICS O F L7915C (refer to the test circuits, TJ= 0 t o 125°C, VI= -23V,
(*) Line RegulationVI= -17.5 to -30 VTJ= 25°C300mV
∆V
O
(*) Load RegulationIO=5mAto1.5ATJ= 25°C300mV
∆V
O
Quiescent CurrentTJ= 25°C3mA
I
d
Quiescent Current Change IO=5mAto1A0.5mA
∆I
d
/∆T Output Voltage DriftIO= 5 mA-0.9mV/°C
∆V
O
eNOutput Noise VoltageB = 10Hz to 100KHzT
SVRSupply Voltage Rejection∆V
Dropout VoltageIO=1ATJ= 25°C∆VO= 100 mV1.1V
V
d
Short Circuit Current1.3A
I
sc
(*) Load and line regulation are specified at constant junction temperature. Changes in VOdue to heating effects must be taken into account
separately. Pulse testingwith low duty cycle is used.
V
= -18.5 to -30 V
I
= -20 to -26 VTJ= 25°C150
V
I
= 250 to 750 mATJ= 25°C150
I
O
= -18.5 to -30 V1
V
I
= 25°C250µV
J
= 10 Vf = 120Hz5460dB
I
-14.3-15-15.7V
ELECTRICAL CHARACTERISTICS O F L7918C (refer to the test circuits, TJ= 0 t o 125°C, VI= -27V,
(*) Load and line regulation are specified at constant junction temperature. Changes in VOdue to heating effects must be taken into account
separately. Pulse testingwith low duty cycle is used.
V
= -22 to -33 V
I
= -24 to -30 VTJ= 25°C180
V
I
= 250 to 750 mATJ= 25°C180
I
O
= -22 to -33 V1
V
I
= 25°C300µV
J
= 10 Vf = 120Hz5460dB
I
-17.1-18-18.9V
6/16
Page 7
L7900 SERIE S
ELECTRICAL CHARACTERISTICS O F L7920C (refer to the test circuits, TJ= 0 t o 125°C, VI= -29V,
(*) Load and line regulation are specified at constant junction temperature. Changes in VOdue to heating effects must be taken into account
separately. Pulse testingwith low duty cycle is used.
V
= -24 to -35 V
I
= -26 to -32 VTJ= 25°C200
V
I
= 250 to 750 mATJ= 25°C200
I
O
= -24 to -35 V1
V
I
= 25°C350µV
J
= 10 Vf = 120Hz5460dB
I
-19-20-21V
ELECTRICAL CHARACTERISTICS O F L7922C (refer to the test circuits, TJ= 0 t o 125°C, VI= -31V,
(*) Load and line regulation are specified at constant junction temperature. Changes in VOdue to heating effects must be taken into account
separately. Pulse testingwith low duty cycle is used.
V
= -26 to -37 V
I
= -28 to -34 VTJ= 25°C220
V
I
= 250 to 750 mATJ= 25°C220
I
O
= -26 to -37 V1
V
I
= 25°C375µV
J
= 10 Vf = 120Hz5460dB
I
-20.9-22-23.1V
7/16
Page 8
L7900 SERIE S
ELECTRICAL CHARACTERISTICS O F L7924C (refer to the test circuits, TJ= 0 t o 125°C, VI= -33V,
(*) Load and line regulation are specified at constant junction temperature. Changes in VOdue to heating effects must be taken into account
separately. Pulse testingwith low duty cycle is used.
V
= -27 to -38 V
I
= -30 to -36 VTJ= 25°C240
V
I
= 250 to 750 mATJ= 25°C240
I
O
= -27 to -38 V1
V
I
= 25°C400µV
J
= 10 Vf = 120Hz5460dB
I
-22.8-24-25.2V
APPLICATIONS INFORMATION
Figure1 : Fixed Output Regulator
NOTE:
1. To specify an output voltage, substitute voltage value for "XX".
2. Required forstability. For value given,capacitor must be solidtantalum. Ifaluminium electrolytics are used,at least ten times value should
be selected. C1 is required if regulator is located an appreciable distance from power supply filter.
3. To improve transient response. If large capacitors are used, a high current diode from input to output (1N4001 or similar) should be introduced to protect the device from momentary input short circuit.
8/16
Page 9
Figure2 : Split Power Su pply (± 15V/1A)
Against potential latch-up problems.
Figure3 : Ci rcu it for Increasing Output Voltage
L7900 SERIE S
R1+R
VO=Vxx
C3 Optional for improved transient response and ripple rejection.
2
R
2
V
xx
> 3I
R
2
d
Figure4 : Hi gh Current Negative Regulator (-5V/4A with 5A current limiting)
9/16
Page 10
L7900 SERIE S
Figure5 : T y pical ECL System Power Supply (-5.2V/4A)
Optional dropping resistor to reduce the power dissipated in the boost transistor.
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use o f suc h inf ormat ion n or f or an y infr ingeme nt of paten ts or oth er ri gh ts of third part ies whic h may resul t f rom
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all info rmation
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
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