Datasheet 79C0832RT4QK20, 79C0832RT4QK15, 79C0832RT4QI20, 79C0832RT4QH20, 79C0832RT4QH15 Datasheet (MAXWELL)

1

Memory

All data sheets are subject to change without notice

(858) 503-3300 - Fax: (858) 503-3301 - www.maxwell.com

8 Megabit (256K x 32-Bit)

EEPROM MCM

79C0832

12.19.01 Rev 5

1000576

FEATURES:

• Eight 128k x 8-bit EEPROM MCM

•R

AD-PAK® radiation-hardened against natural space radia-

tion

• Total dose hardness:

- >100 krad (Si), depending upon space mission

• Excellent Single event effects

- SEL

TH

> 120 MeV/mg/cm

2

- SEU > 90 MeV/mg/cm2 read mode

- SEU = 18 MeV/mg/cm

2

write mode

• Package: 96 pin R

AD-PAK® quad flat pack

• High endurance

- 10,000 cycles/byte, 10 year data retention

• Page Write Mode: 1 to 8 X 128 byte page

• High Speed:

- 150 and 200 ns maximum access times

• Automatic programming

- 10 ms automatic Page/Byte write

• Low power dissipation

- 160 mW/MHz active current

- 880 µW standby current

DESCRIPTION:

Maxwell Technologies’ 79C0832 multi-chip module (MCM) memory features a greater than 100 krad (Si) total dose tolerance, depending upon space misssion. Using Maxwell Technologies’ patented radiation-hardened R

AD-PAK® MCM

packaging technology, the 79C0832 is the first radiation-hardened 8 megabit MCM EEPROM for space application. The 79C0832 uses eight 1 Megabit high speed CMOS die to yield an 8 megabit product. The 79C0832 is capable of in-system electrical byte and page programmability. It has a 128 x 8 byte page programming function to make its erase and write operations faster. It also features Data

Polling and a Ready/Busy signal to indicate the completion of erase and programming operations. In the 79C0832, hardware data protection is provided with the RES

pin, in addition to noise protection on the

WE

signal and write inhibit on power on and off. Software data protection is implemented using the JEDEC optional standard algorithm.

Maxwell Technologies' patented R

AD-PAK® packaging technol-

ogy incorporates radiation shielding in the microcircuit package. It eliminates the need for box shielding while providing the required radiation shielding for a lifetime in orbit or space mission. In a GEO orbit, R

AD-PAK provides greater than 100

krad (Si) radiation dose tolerance. This product is available with screening up to Class K.

Logic Diagram

Memory

2

All data sheets are subject to change without notice

8 Megabit (256K x 32-Bit) EEPROM MCM

79C0832

12.19.01 Rev 5

1000576

TABLE 1. 79C0832 PINOUT DESCRIPTION

PIN SYMBOL DESCRIPTION

84-77, 29-37 ADDR0 to ADDR16 Address Input

48-55, 66-73, 96,

1-7, 18-25

I/O0 to I/O31 Data Input/Output

61 OE

Output Enable

41, 43 CE0-1

Chip Enable 0 through 1

36 WE

Write Enable

10, 17, 28, 40, 44,

58, 65, 76, 87, 93

5V Power Supply

8, 9, 10-16, 26, 27,

38, 42, 46, 56, 57,

59, 60, 62-64, 74, 75, 85, 86, 88-92,

94, 95

GND Ground

39 RDY/BUSY

Ready/Busy

47 RES

Reset

TABLE 2. 79C0832 ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL MIN MAX UNIT

Supply Voltage V

CC

-0.6 7.0 V

Input Voltage V

IN

-0.5

1

1. VIN min = -3.0V for pulse width <50ns.

7.0 V

Operating Temperature Range T

OPR

-55 125

°

C

Storage Temperature Range T

STG

-65 150

°

C

TABLE 3. 79C0832 RECOMMENDED DC OPERATING CONDITIONS

PARAMETER SYMBOL MIN MAX UNIT

Supply Voltage V

CC

4.5 5.5 V

Input Voltage

RES

_PIN

V

IL

V

IH

V

H

-0.3

1

2.2

V

CC

-0.5

1. V

IL

min = -1.0V for pulse width < 50 ns

0.8

V

CC

+0.3

V

CC

+1

V V V

Operating Temperature Range T

OPR

-55 125

°

C

Memory

3

All data sheets are subject to change without notice

8 Megabit (256K x 32-Bit) EEPROM MCM

79C0832

12.19.01 Rev 5

1000576

TABLE 4. 79C0832 CAPACITANCE

(TA = 25 °C, f = 1 MHz)

P

ARAMETER SYMBOL MIN MAX UNIT

Input Capacitance: VIN = 0V

1

1. Guaranteed by design.

C

IN

-- 6 pF

Output Capacitance: V

OUT

= 0V

1

C

OUT

-- 12 pF

TABLE 5. 79C0832 DC ELECTRICAL CHARACTERISTICS

(VCC = 5V ±10%, TA = -55 TO +125°C)

P

ARAMETER TEST CONDITION SYMBOL MIN MAX UNITS

Input Leakage Current (VCC = 5.5V, VIN = 5.5V) I

LI

-- 16

1

1. IIL on RES = 800 uA MAX.

µA

Output Leakage Current (VCC = 5.5V, V

OUT

= 5.5V/0.4V) I

LO

-- 16 µA

Standby V

CC

Current

CE

= V

CC

CE = V

IH

I

CC1

I

CC2

--

80

2

4

2

2. One CE Active.

µA mA

Operating V

CC

Current

I

OUT

= 0mA, Duty = 100%, Cycle = 1 us at

V

CC

= 5.5V

I

OUT

= 0mA, Duty = 100%, Cycle = 150 ns

at V

CC

= 5.5V

I

CC3

--

60

2

200

2

mA

Input Voltage

RES

_PIN

V

IL

V

IH

V

H

2.2

V

CC

-0.5

0.8 V V V

Output Voltage

Data Lines – V

CC

= Min, Iol = 2.1mA

RDYZ/BSY_Lines – V

CC

Min, Iol = 12mA

Data Lines – V

CC

= Min, Ioh = -400µA

RDYZ/BSY_Lines – V

CC

Min, Ioh = -12mA

V

OL

V

OL

V

OH

V

OH

--

2.4

3.15

0.4

--

V V V V

Memory

4

All data sheets are subject to change without notice

8 Megabit (256K x 32-Bit) EEPROM MCM

79C0832

12.19.01 Rev 5

1000576

TABLE 6. 79C0832 AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION

1

(VCC = 5V ±10%, TA = -55 TO +125°C)

1. Test conditions: input pulse levels = 0.4V to 2.4V; input rise and fall times <

20 ns; output load = 1 TTL gate + 100 pF (including

scope and jig); reference levels for measuring timing = 0.8 V/1.8 V.

P

ARAMETER SYMBOL MIN MAX UNIT

Address Access Time CE = OE = VIL, WE = V

IH

-150

-200

t

ACC

--

150 200

ns

Chip Enable Access Time OE

= VIL, WE = V

IH

-150

-200

t

CE

--

150 200

ns

Output Enable Access TIme CE

= VIL, WE = V

IH

-150

-200

t

OE

0 0

75

125

ns

Output Hold to Address Change CE

= OE =VIL, WE = V

IH

-150

-200

t

OH

0 0

--

ns

Output Disable to High-Z

2

CE = VIL, WE = V

IH

-150

-200

CE

= OE = VIL, WE = V

IH

-150

-200

2. t

DF

and t

DFR

are defined as the time at which the output becomes an open circuit and data is no longer driven.

t

DF

t

DFR

0 0

50 60

350 450

ns

RES

to Output Delay CE = OE = VIL, WE = V

IH

3

-150

-200

3. Guaranteed by design.

T

RR

0 0

450 650

ns

TABLE 7. 79C0832 AC ELECTRICAL CHARACTERISTICS FOR WRITE OPERATION

(VCC = 5V ±10%, TA = -55 TO +125°C)

P

ARAMETER SYMBOL

MIN

1

MAX UNITS

Address Setup Time

-150

-200

t

AS

0 0

--

ns

Chip Enable to Write Setup Time (WE

controlled)

-150

-200

t

CS

0 0

--

ns

Memory

5

All data sheets are subject to change without notice

8 Megabit (256K x 32-Bit) EEPROM MCM

79C0832

12.19.01 Rev 5

1000576

Write Pulse Width CE

controlled

-150

-200

WE

controlled

-150

-200

t

CW

t

WP

250 350

--

ns

Address Hold Time

-150

-200

t

AH

150 200

--

ns

Data Setup Time

-150

-200

t

DS

120 200

--

ns

Data Hold Time

-150

-200

t

DH

10 20

--

ns

Chip Enable Hold Time (WE

controlled)

-150

-200

t

CH

0 0

--

ns

Write Enable to Write Setup Time (CE

controlled)

-150

-200

t

WS

0 0

--

ns

Write Enable Hold Time (CE

controlled)

-150

-200

t

WH

0 0

--

ns

Output Enable to Write Setup Time

-150

-200

t

OES

0 0

--

ns

Output Enable Hold Time

-150

-200

t

OEH

0 0

--

ns

Write Cycle Time

2

-150

-200

t

WC

--

10 20

ms

Data Latch Time

-150

-200

t

DL

300 400

--

ns

Byte Load Window

-150

-200

t

BL

100 200

--

µs

Byte Load Cycle

-150

-200

t

BLC

0.55

0.95

30 50

µs

TABLE 7. 79C0832 AC ELECTRICAL CHARACTERISTICS FOR WRITE OPERATION

(VCC = 5V ±10%, TA = -55 TO +125°C)

P

ARAMETER SYMBOL

MIN

1

MAX UNITS

Memory

6

All data sheets are subject to change without notice

8 Megabit (256K x 32-Bit) EEPROM MCM

79C0832

12.19.01 Rev 5

1000576

Time to Device Busy

-150

-200

t

DB

120 170

--

ns

Write Start Time

3

-150

-200

t

DW

150 250

--

ns

RES

to Write Setup Time

-150

-200

t

RP

100 200

--

µs

V

CC

to RES Setup Time

4

-150

-200

t

RES

1 3

--

µs

1. Use this device in a longer cycle than this value.

2. t

WC

must be longer than this value unless polling techniques or RDY/BUSY are used. This device automatically completes the

internal write operation within this value.

3. Next read or write operation can be initiated after t

DW

if polling techniques or RDY/BUSY are used.

4. Guaranteed by desgin.

TABLE 8. 79C0832 MODE SELECTION

1, 2

PARAMETER

CE

3

OE WE I/O RES RDY/BUSY

Read V

IL

V

IL

V

IH

D

OUT

V

H

High-Z

Standby V

IH

X X High-Z X High-Z

Write V

IL

V

IH

V

IL

D

IN

V

H

High-Z --> V

OL

Deselect V

IL

V

IH

V

IH

High-Z V

H

High-Z

Write Inhibit X X V

IH

-- X --

XV

IL

X--X--

Data Polling V

IL

V

IL

V

IH

Data Out (I/O7) V

H

V

OL

Program X X X High-Z V

IL

High-Z

1. X = Don’t care.

2. Refer to the recommended DC operating conditions.

3. For CE

1-4

only one CE can be used (“on”) at a time.

TABLE 7. 79C0832 AC ELECTRICAL CHARACTERISTICS FOR WRITE OPERATION

(VCC = 5V ±10%, TA = -55 TO +125°C)

P

ARAMETER SYMBOL

MIN

1

MAX UNITS

Memory

7

All data sheets are subject to change without notice

8 Megabit (256K x 32-Bit) EEPROM MCM

79C0832

12.19.01 Rev 5

1000576

FIGURE 1. READ TIMING WAVEFORM

FIGURE 2. BYTE WRITE TIMING WAVEFORM (1) (WE CONTROLLED)

Memory

8

All data sheets are subject to change without notice

8 Megabit (256K x 32-Bit) EEPROM MCM

79C0832

12.19.01 Rev 5

1000576

FIGURE 3. BYTE WRITE TIMING WAVEFORM (2) (CE CONTROLLED)

FIGURE 4. PAGE WRITE TIMING WAVEFORM (1) (WE CONTROLLED)

Memory

9

All data sheets are subject to change without notice

8 Megabit (256K x 32-Bit) EEPROM MCM

79C0832

12.19.01 Rev 5

1000576

FIGURE 5. PAGE WRITE TIMING WAVEFORM (2) (CE CONTROLLED)

F

IGURE 6. DATA POLLING TIMING WAVEFORM

Memory

10

All data sheets are subject to change without notice

8 Megabit (256K x 32-Bit) EEPROM MCM

79C0832

12.19.01 Rev 5

1000576

FIGURE 7. SOFTWARE DATA PROTECTION TIMING WAVEFORM (1) (IN PROTECTION MODE)

F

IGURE 8. SOFTWARE DATA PROTECTION WAVEFORM (2) (IN NON-PROTECTION MODE)

EEPROM APPLICATION NOTES

This application note describes the programming procedures for the EEPROM modules and with details of various techniques to preserve data protection.

Automatic Page Write

Page-mode write feature allows 1 to 128 bytes of data to be written into the EEPROM in a single write cycle, and allows the undefined data within 128 bytes to be written corresponding to the undefined address (A0 to A6). Loading the first byte of data, the data load window opens 30µs for the second byte. In the same manner each additional byte of data can be loaded within 30µs. In case CE

and WE are kept high for 100(µs after data input, EEPROM enters

erase and write mode automatically and only the input data are written into the EEPROM.

WE, CE Pin Operation

During a write cycle, addresses are latched by the falling edge of WE or CE, and data is latched by the rising edge of WE

or CE.

Memory

11

All data sheets are subject to change without notice

8 Megabit (256K x 32-Bit) EEPROM MCM

79C0832

12.19.01 Rev 5

1000576

Data Polling

Data Polling function allows the status of the EEPROM to be determined. If EEPROM is set to read mode during a write cycle, an inversion of the last byte of data to be loaded outputs from I/O 7 to indicate that the EEPROM is performing a write operation.

RDY/Busy Signal

RDY/Busy signal also allows a comparison operation to determine the status of the EEPROM. The RDY/Busy signal has high impedance except in write cycle and is lowered to V

OL

after the first write signal. At the-end of a write cycle,

the RDY/Busy

signal changes state to high impedance.

RES Signal

When RES is LOW, the EEPROM cannot be read and programmed. Therefore, data can be protected by keeping RES

low when VCC is switched. RES should be high during read and programming because it doesn’t provide a latch

function.

Data Protection

To protect the data during operation and power on/off, the EEPROM has the internal functions described below.

1. Data Protection against Noise of Control Pins (CE, OE, WE) during Operation.

Memory

12

All data sheets are subject to change without notice

8 Megabit (256K x 32-Bit) EEPROM MCM

79C0832

12.19.01 Rev 5

1000576

During readout or standby, noise on the control pins may act as a trigger and turn the EEPROM to programming mode by mistake. To prevent this phenomenon, the EEPROM has a noise cancellation function that cuts noise if its width is 20ns or less in programming mode. Be careful not to allow noise of a width of more than 20ns on the control pins.

2. Data Protection at V

CC

on/off

When V

CC

is turned on or off, noise on the control pins generated by external circuits, such as CPUs, may turn the EEPROM to programming mode by mistake. To prevent this unintentional programming, the EEPROM must be kept in unprogrammable state during V

CC

on/off by using a CPU reset signal to RES pin.

RES

should be kept at VSS level when VCC is turned on or off. The EEPROM breaks off programming operation when RES

become low, programming operation doesn’t finish correctly in case that RES

falls low during programming operation. RES

should be kept high for 10 ms after the last data input.

3. Software Data Protection

Memory

13

All data sheets are subject to change without notice

8 Megabit (256K x 32-Bit) EEPROM MCM

79C0832

12.19.01 Rev 5

1000576

The software data protection function is to prevent unintentional programming caused by noise generated by external circuits. In software data protection mode, 3 bytes of data must be input before write data as follows. These bytes can switch the nonprotection mode to the protection mode.

Software data protection mode can be canceled by inputting the following 6 bytes. Then, the EEPROM turns to the non-protection mode and can write data normally. However, when the data is input in the canceling cycle, the data cannot be written.

Memory

14

All data sheets are subject to change without notice

8 Megabit (256K x 32-Bit) EEPROM MCM

79C0832

12.19.01 Rev 5

1000576

Q96-01

Note: All dimensions in inches

96-PIN RAD-PAK® QUAD FLAT PACKAGE

SYMBOL

DIMENSION

MIN NOM MAX

A .184 .200 .216

b .010 .012 .013

c --- .009 .012

D 1.408 1.420 1.432

D1 1.162

e.050

S1 .129

F1 1.175 1.180 1.185

L --- 2.528 2.543

L1 2.485 2.500 2.505

L2 --- 1.700

A1 .152 .165 .178

N96

Memory

15

All data sheets are subject to change without notice

8 Megabit (256K x 32-Bit) EEPROM MCM

79C0832

12.19.01 Rev 5

1000576

Important Notice:

These data sheets are created using the chip manufacturers published specifications. Maxwell Technologies verifies functionality by testing key parameters either by 100% testing, sample testing or characterization.

The specifications presented within these data sheets represent the latest and most accurate information available to date. However, these specifications are subject to change without notice and Maxwell Technologies assumes no responsibility for the use of this information.

Maxwell Technologies’ products are not authorized for use as critical components in life support devices or systems without express written approval from Maxwell Technologies.

Any claim against Maxwell Technologies must be made within 90 days from the date of shipment from Maxwell Technologies. Maxwell Technologies’ liability shall be limited to replacement of defective parts.

Memory

16

All data sheets are subject to change without notice

8 Megabit (256K x 32-Bit) EEPROM MCM

79C0832

12.19.01 Rev 5

1000576

Product Ordering Options

Model Number

Feature

Option Details

9C0832

XX

F X

-XX

Access Time

Screening Flow

Package

Radiation Feature

Base Product Nomenclature

15 = 150 ns 20 = 200 ns

Multi Chip Module (MCM) K = Maxwell Class K H = Maxwell Class H E = Engineering (testing @ +25°C

)

I = Industrial (testing @ -55°C, +25°C, +125°C)

Q = Quad Flat Pack

RP = R

AD-PAK® package

RT1 = Guaranteed to 10 krad at die level RT2 = Guaranteed to 25 krad at die level RT4 = Guaranteed to 40 krad at die level

8 Megabit (256K x 32-Bit) EEPROM MCM