Datasheet 79C0408RT4FH12, 79C0408RT4FE20, 79C0408RT4FE15, 79C0408RT4FE12, 79C0408RT2FK20 Datasheet (MAXWELL)
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1
Memory
All data sheets are subject to change without notice
(858) 503-3300 - Fax: (858) 503-3301- www.maxwell.com
4 Megabit (512k x 8-bit)
EEPROM MCM
79C0408
©2002 Maxwell Technologies
All rights reserved.
03.20.02 Rev 10
• Four 128k x 8-bit EEPROMs MCM
•R
AD-PAK® radiation-hardened against natural space radia-
tion
• Total dose hardness:
- > 100 krad (Si)
- Dependent upon orbit
• Excellent Single Event Effects
- SEL > 120 MeV/mg/cm
2
- SEU > 90 MeV/mg/cm2 read mode
- SEU = 18 MeV/mg/cm
2
write mode
• Package: 40 pin R
AD-PAK® flat pack
• High speed:
- 120, 150, and 200 ns maximum access times
available
•Data
Polling and Ready/Busy signal
• Software data protection
• Write protection by RES
pin
• High endurance
- 10,000 erase/write (in Page Mode), 10 year data reten-
tion
• Page write mode: 1 to 128 byte page
• Low power dissipation
- 88 mW/MHz active mode
- 440 µW standby mode
DESCRIPTION:
Maxwell Technologies’ 79C0408 multi-chip module (MCM)
memory features a greater than 100 krad (Si) total dose tolerance, dependent upon orbit. Using Maxwell Technologies’ patented radiation-hardened R
AD-PAK® MCM packaging
technology, the 79C0408 is the first radiation-hardened 4
Megabit MCM EEPROM for space applications. The 79C0408
uses four 1 Megabit high-speed CMOS die to yield a 4 Megabit product. The 79C0408 is capable of in-system electrical
Byte and Page programmability. It has a 128 bytes Page Programming function to make its erase and write operations
faster. It also features Data Polling and a Ready/Busy signal to
indicate the completion of erase and programming operations.
In the 79C0408, hardware data protection is provided with the
RES
pin, in addition to noise protection on the WE signal and
write inhibit on power on and off. Software data protection is
implemented using the JEDEC optional standard algorithm.
Maxwell Technologies' patented R
AD-PAK® packaging technol-
ogy incorporates radiation shielding in the microcircuit package. It eliminates the need for box shielding while providing
the required radiation shielding for a lifetime in orbit or space
mission. In a GEO orbit, R
AD-PAK provides greater than 100
krad (Si) radiation dose tolerance. This product is available
with screening up to Class K.
128K x 8 128K x 8 128K x 8 128K x 8
I/O
0-7
A
0-16
WE
R/ B
RES
OE
CE
1
CE
2
CE
3
CE
4
FEATURES:
Memory
2
All data sheets are subject to change without notice
©2002 Maxwell Technologies
All rights reserved.
4 Megabit (512k x 8-bit) EEPROM MCM
79C0408
03.20.02 Rev 10
1. VIN MIN = -3.0V FOR PULSE WIDTH <50NS.
TABLE 1. 79C0408 PIN DESCRIPTION
PIN SYMBOL DESCRIPTION
16-9, 32-31,
28, 30, 8, 33,
7, 36, 6
A0 to A16 Address Input
17-19, 22-26 I/O0 to I/O7 Data Input/Output
29 OE
Output Enable
2, 3, 38, 39 CE1-4
Chip Enable 1 through 4
34 WE
Write Enable
1, 27, 40 VCC Power Supply
4, 20, 21, 37 VSS Ground
4RDY/BUSY
Ready/Busy
35 RES
Reset
TABLE 2. 79C0408 ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL MIN MAX UNIT
Supply Voltage V
CC
-0.6 7.0 V
Input Voltage V
IN
-0.5
1
7.0 V
Operating Temperature Range T
OPR
-55 125
°
C
Storage Temperature Range T
STG
-65 150
°
C
TABLE 3. 79C0408 RECOMMENDED OPERATING CONDITIONS
PARAMETER SUBGROUPS SYMBOL MIN MAX UNIT
Supply Voltage 1 V
CC
4.5 5.5 V
Input Voltage
RES
_PIN
1V
IL
V
IH
V
H
-0.3
1
2.2
V
CC
-0.5
1. V
IL
min = -1.0V for pulse width < 50 ns
0.8
V
CC
+0.3
V
CC
+1
V
V
V
Case Operating Temperature 1 T
C
-55 125
°
C
Memory
3
All data sheets are subject to change without notice
©2002 Maxwell Technologies
All rights reserved.
4 Megabit (512k x 8-bit) EEPROM MCM
79C0408
03.20.02 Rev 10
TABLE 4. 79C0408 CAPACITANCE
1
(TA = 25 °C, f = 1 MHz)
1. Guaranteed by design.
P
ARAMETER SYMBOL MIN MAX UNIT
Input Capacitance: VIN = 0 V
2
WE
CE
1-4
OE
A
0-16
2. Guaranteed by design.
C
IN
--
--
--
--
24
6
24
24
pf
Output Capacitance: V
OUT
= 0 V
2
C
OUT
48 pF
TABLE 5. 79C0408 DC ELECTRICAL CHARACTERISTICS
(VCC = 5V ±10%, TA = -55 TO +125°C)
P
ARAMETER TEST CONDITION SUBGROUPS SYMBOL MIN MAX UNITS
Input Leakage Current VCC = 5.5V, VIN = 5.5V
1
1, 2, 3 I
IL
µA
CE
1-4
1, 2, 3 -- 2
1
1. ILI on RES = 100 uA max.
OE
, WE
1-4
1, 2, 3 -- 4
A
0-16
1, 2, 3 -- 4
Output Leakage Current V
CC
= 5.5V, V
OUT
= 5.5V/0.4V 1, 2, 3 I
LO
-- 2 µA
Standby V
CC
Current
2
2. One CE
active.
CE
= V
CC
1, 2, 3 I
CC1
-- 20 µA
CE
= V
IH
1, 2, 3 I
CC2
-- 1 mA
Operating V
CC
Current I
OUT
= 0mA, Duty = 100%, Cycle = 1µs at
V
CC
= 5.5V
1, 2, 3 I
CC3
-- 15 mA
I
OUT
= 0mA, Duty = 100%, Cycle = 150ns
at V
CC
= 5.5V
1, 2, 3 -- 50
Input Voltage
RES
_PIN
1, 2, 3 V
IL
-- 0.8 V
1, 2, 3 V
IH
2.2 --
1, 2, 3 V
H
VCC -0.5 --
Output Voltage I
OL
= 2.1 mA 1, 2, 3 V
OL
-- 0.4 V
I
OH
= -0.4 mA 1, 2, 3 V
OH
2.4 --
Memory
4
All data sheets are subject to change without notice
©2002 Maxwell Technologies
All rights reserved.
4 Megabit (512k x 8-bit) EEPROM MCM
79C0408
03.20.02 Rev 10
TABLE 6. 79C0408 AC ELECTRICAL CHARACTERISTICS FOR READ OPERATIONS
1
(VCC = 5V ±10%, TA = -55 TO +125°C)
1. Test conditions: Input pulse levels - 0.4V to 2.4V; input rise and fall times < 20ns; output load - 1 TTL gate + 100pF (including scope
and jig); reference levels for measuring timing - 0.8V/1.8V.
P
ARAMETER SUBGROUPS SYMBOL MIN MAX UNIT
Address Access Time CE = OE = VIL, WE = V
IH
-120
-150
-200
9, 10, 11 t
ACC
--
--
--
120
150
200
ns
Chip Enable Access Time OE
= VIL, WE = V
IH
-120
-150
-200
9, 10, 11 t
CE
--
--
--
120
150
200
ns
Output Enable Access Time CE
= VIL, WE = V
IH
-120
-150
-200
9, 10, 11 t
OE
0
0
0
75
75
125
ns
Output Hold to Address Change CE
= OE = VIL, WE = V
IH
-120
-150
-200
9, 10, 11 t
OH
0
0
0
--
--
--
ns
Output Disable to High-Z
2
CE = VIL, WE = V
IH
-120
-150
-200
2. t
DF
and t
DFR
are defined as the time at which the output becomes an open circuit and data is no longer driven.
9, 10, 11 t
DF
0
0
0
50
50
60
ns
CE
= OE = VIL, WE = V
IH
-120
-150
-200
9, 10, 11 t
DFR
0
0
0
300
350
450
RES
to Output Delay CE = OE = VIL, WE = VIH
3
-120
-150
-200
3. Guaranteed by design.
t
RR
--
--
--
400
450
650
ns
Memory
5
All data sheets are subject to change without notice
©2002 Maxwell Technologies
All rights reserved.
4 Megabit (512k x 8-bit) EEPROM MCM
79C0408
03.20.02 Rev 10
TABLE 7. 79C0408 AC ELECTRICAL CHARACTERISTICS FOR WRITE OPERATIONS
(VCC = 5V ±10%, TA = -55 TO +125°C)
P
ARAMETER SUBGROUPS SYMBOL
MIN
1
MAX UNIT
Address Setup Time
-120
-150
-200
9, 10, 11 t
AS
0
0
0
--
--
--
ns
Chip Enable to Write Setup Time (WE
Controlled)
-120
-150
-200
9, 10, 11 t
CS
0
0
0
--
--
--
ns
Write Pulse Width
CE
Controlled
-120
-150
-200
WE
Controlled
-120
-150
-200
9, 10, 11
t
CW
t
WP
200
250
350
200
250
350
--
--
--
--
--
--
ns
Address Hold Time
-120
-150
-200
9, 10, 11 t
AH
150
150
200
--
--
--
ns
Data Setup Time
-120
-150
-200
9, 10, 11 t
DS
75
100
150
--
--
--
ns
Data Hold Time
-120
-150
-200
9, 10, 11 t
DH
10
10
20
--
--
--
ns
Chip Enable Hold Time (WE Controlled)
-120
-150
-200
9, 10, 11 t
CH
0
0
0
--
--
--
ns
Write Enable to Write Setup Time (CE
Controlled)
-120
-150
-200
9, 10, 11 t
WS
0
0
0
--
--
--
Write Enable Hold Time (CE
Controlled)
-120
-150
-200
9, 10, 11 t
WH
0
0
0
--
--
--
Memory
6
All data sheets are subject to change without notice
©2002 Maxwell Technologies
All rights reserved.
4 Megabit (512k x 8-bit) EEPROM MCM
79C0408
03.20.02 Rev 10
Output Enable to Write Setup Time
-120
-150
-200
9, 10, 11 t
OES
0
0
0
--
--
--
ns
Output Enable Hold Time
-120
-150
-200
9, 10, 11 t
OEH
0
0
0
--
--
--
ns
Write Cycle Time
2
-120
-150
-200
9, 10, 11 t
WC
--
--
--
10
10
20
ms
Data Latch Time
-120
-150
-200
9, 10, 11 t
DL
250
300
400
--
--
--
ns
Byte Load Window
-120
-150
-200
9, 10, 11 t
BL
100
100
200
--
--
--
µs
Byte Load Cycle
-120
-150
-200
9, 10, 11 t
BLC
0.55
0.55
0.95
30
30
30
µs
Time to Device Busy
-120
-150
-200
9, 10, 11 t
DB
100
120
170
--
--
--
ns
Write Start Time
3
-120
-150
-200
9, 10, 11 t
DW
150
150
250
--
--
--
ns
RES
to Write Setup Time
-120
-150
-200
9, 10, 11 t
RP
100
100
200
--
--
--
µs
V
CC
to RES Setup Time
4
-120
-150
-200
9, 10, 11 t
RES
1
1
3
--
--
--
µs
1. Use this divice in a longer cycle than this value.
2. t
WC
must be longer than this value unless polling techniques or RDY/BUSY are used. This device automatically completes the internal
write operation within this value.
TABLE 7. 79C0408 AC ELECTRICAL CHARACTERISTICS FOR WRITE OPERATIONS
(VCC = 5V ±10%, TA = -55 TO +125°C)
P
ARAMETER SUBGROUPS SYMBOL
MIN
1
MAX UNIT
Memory
7
All data sheets are subject to change without notice
©2002 Maxwell Technologies
All rights reserved.
4 Megabit (512k x 8-bit) EEPROM MCM
79C0408
03.20.02 Rev 10
FIGURE 1. READ TIMING WAVEFORM
3. Next read or write operation can be initiated after tDW if polling techniques or RDY/BUSY are used.
4. Gauranteed by design.
TABLE 8. 79C0408 MODE SELECTION
1, 2
1. X = Don’t care.
2. Refer to the recommended DC operating conditions.
P
ARAMETER
CE
3
3. For CE
1-4
only one CE can be used (“on”) at a time.
OE
WE I/O RES RDY/BUSY
Read V
IL
V
IL
V
IH
D
OUT
V
H
High-Z
Standby V
IH
X X High-Z X High-Z
Write V
IL
V
IH
V
IL
D
IN
V
H
High-Z --> V
OL
Deselect V
IL
V
IH
V
IH
High-Z V
H
High-Z
Write Inhibit X X V
IH
-- X --
XV
IL
X--X--
Data Polling V
IL
V
IL
V
IH
Data Out (I/O7) V
H
V
OL
Program X X X High-Z V
IL
High-Z
Memory
8
All data sheets are subject to change without notice
©2002 Maxwell Technologies
All rights reserved.
4 Megabit (512k x 8-bit) EEPROM MCM
79C0408
03.20.02 Rev 10
FIGURE 2. BYTE WRITE TIMING WAVEFORM(1) (WE CONTROLLED)
Memory
9
All data sheets are subject to change without notice
©2002 Maxwell Technologies
All rights reserved.
4 Megabit (512k x 8-bit) EEPROM MCM
79C0408
03.20.02 Rev 10
FIGURE 3. BYTE WRITE TIMING WAVEFORM (2) (CE CONTROLLED)
Memory
10
All data sheets are subject to change without notice
©2002 Maxwell Technologies
All rights reserved.
4 Megabit (512k x 8-bit) EEPROM MCM
79C0408
03.20.02 Rev 10
FIGURE 4. PAGE WRITE TIMING WAVEFORM(1) (WE CONTROLLED)
Memory
11
All data sheets are subject to change without notice
©2002 Maxwell Technologies
All rights reserved.
4 Megabit (512k x 8-bit) EEPROM MCM
79C0408
03.20.02 Rev 10
FIGURE 5. PAGE WRITE TIMING WAVEFORM(2) (CE CONTROLLED)
FIGURE 6. DATA POLLING TIMING WAVEFORM
Memory
12
All data sheets are subject to change without notice
©2002 Maxwell Technologies
All rights reserved.
4 Megabit (512k x 8-bit) EEPROM MCM
79C0408
03.20.02 Rev 10
FIGURE 7. SOFTWARE DATA PROTECTION TIMING WAVEFORM(1) (IN PROTECTION MODE)
FIGURE 8. SOFTWARE DATA PROTECTION TIMING WAVEFORM(2) (IN NON-PROTECTION MODE)
Toggle Bit Waveform
EEPROM APPLICATION NOTES
This application note describes the programming procedures for each EEPROM module (four in each MCM) and
details of various techniques to preserve data protection.
Automatic Page Write
Page-mode write feature allows from 1 to 128 bytes of data to be written into the EEPROM in a single write cycle, and
allows the undefined data within 128 bytes to be written corresponding to the undefined address (A0 to A6). Loading
the first byte of data, the data load window opens 30 µs for the second byte. In the same manner each additional byte
of data can be loaded within 30 µs. In case CE
and WE are kept high for 100 µs after data input, the EEPROM enters
erase and write mode automatically and only the input data ar e written into the EEPROM.
Memory
13
All data sheets are subject to change without notice
©2002 Maxwell Technologies
All rights reserved.
4 Megabit (512k x 8-bit) EEPROM MCM
79C0408
03.20.02 Rev 10
WE CE Pin Operation
During a write cycle, addresses are latched by the falling edge of WE or CE, and data is latched by the rising edge of
WE
or CE.
Data Polling
Data Polling function allows the status of the EEPROM to be determined. If the EEPROM is set to read mode during a
write cycle, an inversion of the last byte of data to be loaded output is from I/O 7 to indicate that the EEPROM is performing a write operation.
RDY/Busy Signal
RDY/Busy signal also allows a comparison operation to determine the status of the EEPROM. The RDY/Busy signal
has high impedance except in write cycle and is lowered to V
OL
after the first write signal. At the-end of a write cycle,
the RDY/Busy
signal changes state to high impedance.
RES Signal
When RES is LOW, the EEPROM cannot be read and programmed. Therefore, data can be protected by keeping
RES
low when VCC is switched. RES should be kept high during read and programming be cause it doesn’t prov ide a
latch function.
Data Protection
To protect the data during operation and power on/off, the EEPROM has the internal functions described below.
1. Data Protection against Noise of Control Pins (CE, OE, WE) during Operation.
Memory
14
All data sheets are subject to change without notice
©2002 Maxwell Technologies
All rights reserved.
4 Megabit (512k x 8-bit) EEPROM MCM
79C0408
03.20.02 Rev 10
During readout or standby, noise on the control pins may act as a trigger and turn the EEPROM to programmin g mode by mistake. To prevent this phenomenon, the EEPROM has a noise cancellation function that cuts noise if its width is 20 ns or less in
programming mode. Be careful not to allow noise of a width of more than 20ns on the control pins.
2. Data Protection at V
CC
on/off
When V
CC
is turned on or off, noise on the control pins generated by external circuits, such as CPUs, may turn the EEPROM to
programming mode by mistake. To prevent this unintentional programming, the EEPROM must be kept in unprogrammable
state during V
CC
on/off by using a CPU reset signal to RES pin.
RES
should be kept at VSS level when VCC is turned on or off. The EEPROM breaks off programming operation when RES
becomes low, programming operation doesn’t finish correctly in case that RES
falls low during programming operation. RES
should be kept high for 10 ms after the last data input.
3. Software Data Protection
The software data protection function is to prevent unintentional programming caused by noise generated by external circuits.
In software data protection mode, 3 bytes of data must be input before write data as follows. These bytes can switch the nonprotection mode to the protection mode.
Memory
15
All data sheets are subject to change without notice
©2002 Maxwell Technologies
All rights reserved.
4 Megabit (512k x 8-bit) EEPROM MCM
79C0408
03.20.02 Rev 10
Software data protection mode can be canceled by inputting the following 6 bytes. Then, the EEPROM turns to the non-protection mode and can write data normally. However, when the data is input in the canceling cycle, the data cannot be written.
Memory
16
All data sheets are subject to change without notice
©2002 Maxwell Technologies
All rights reserved.
4 Megabit (512k x 8-bit) EEPROM MCM
79C0408
03.20.02 Rev 10
F40-01
Note: All dimensions in inches
79C0408 RAD-PAK® AND XRAY-PAKTM PACKAGE DIMENSIONS
SYMBOL
DIMENSION
MIN NOM MAX
A 0.248 0.274 0.300
b 0.013 0.015 0.022
c 0.006 0.008 0.010
D -- 0.850 0.860
E 0.985 0.995 1.005
E1 -- -- 1.025
E2 0.890 0.895 -E3 0.000 0.050 --
e 0.040 BSC
L 0.380 0.390 0.400
Q 0.214 0.245 0.270
S1 0.005 0.038 --
N40
Pin #1 ID
Memory
17
All data sheets are subject to change without notice
©2002 Maxwell Technologies
All rights reserved.
4 Megabit (512k x 8-bit) EEPROM MCM
79C0408
03.20.02 Rev 10
Important Notice:
These data sheets are created using the chip manufacturers published specifications. Maxwell Technologies verifies
functionality by testing key parameters either by 100% testing, sample testing or characterization.
The specifications presented within these data sheets represent the latest and most accurate information available to
date. However, these specifications are subject to change without notice and Maxwell Technologies assumes no
responsibility for the use of this information.
Maxwell Technologies’ products are not authorized for use as critical components in life support devices or systems
without express written approval from Maxwell Technologies.
Any claim against Maxwell Technologies. must be made within 90 days from the date of shipment from Maxwell Technologies. Maxwell Technologies’ liability shall be limited to replacement of defective parts.
Memory
18
All data sheets are subject to change without notice
©2002 Maxwell Technologies
All rights reserved.
4 Megabit (512k x 8-bit) EEPROM MCM
79C0408
03.20.02 Rev 10
Product Ordering Options
Model Numb
er
Feature
Option Details
79C0408
XX
F X
-XX
Access Time
Screening Flow
Package
Radiation Feature
Base Product
Nomenclature
12 = 120 ns (for example)
15 = 150 ns
20 = 200 ns
Multi Chip Module (MCM)
K = Maxwell Class K
H = Maxwell Class H
E = Engineering (testing @ +25°
C
I = Industrial (testing @ -55°C,
+25°C, +125°C)
F = Flat Pack
RP = R
AD-PAK® package
XP = X
ray-Pak
TM
package
RT1 = Guaranteed to 10 krad at
die level
RT2 = Guaranteed to 25 krad at
die level
RT4 = Guaranteed to 40 krad at
4 Megabit (512k x 8-bit) EEPRO
M
MCM
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