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TRANSISTOR PLANT
Quality System for producing discrete semiconductor devices and integrated circuits conforms
to the requirements of STB ISO 9002-96
semiconductor technical data
CHIP FOR THREE-TERMINAL
78L09AC
Features:
Output current in excess of 100 mA
!
No external components required
!
Internal short circuit current limiting
!
Internal thermal overload protection
!
Available in either ± 5% selections
!
Physical Characteristics:
Wafer Diameter ……100 ± 0.5 mm
Wafer thickness ….. 420 ± 20 µm;
Die size …………….. 1.3 x 1.2 mm2 ;
Scribe width ………... 80 µm
Passivation …………. PSG
POSITIVE VOLTAGE REGULATOR IC
Pad #
1
2
3
Pad
name
OUT
IN
GND
Description
Output 101 x 101
Input 101 x 101
Ground 101 x 101
Bond Pad
(µm)
Maximum Ratings (Ta = 25°C)
♦
Input Voltage – 30V
♦
Operating Junction
♦
Temperature (Tj = 125°C)
Substrate is Common and should be connected to Pad 2
ELECTRICAL CHARACTERISTICS CHIPS ON WAFER (Ta=25
°°°°
C)
(Vin=15V, Io=40mA, Ci=0.33µF, Co=0.1µF, Tj = + 25°C, unless otherwise noted.)
Characteristic Symbol Test Condition Min Max Unit
Output Voltage Vo
Line Regulation ΔVv
Load Regulation ΔVi
Quiescent
Current
Quiescent
Current Change
Ib 5.8 mA
ΔIb
11.5V ≤ Vin ≤ 24V,1mA ≤ Io ≤ 40mA
1mA ≤ Io ≤ 70mA
11.5V ≤ Vin ≤ 24V
12V ≤ Vin ≤ 24V
1mA ≤ Io ≤ 100mA
1mA ≤ Io ≤ 40mA
11V ≤ Vin ≤ 23V
1mA ≤ Io ≤ 40mA
8.62
8.62
9.38
9.38
158
113
81
36
1.4
0.09
V
mV
mV
mA
The parameters are guaranteed after scribing and chip encasement
*
E-mail: [email protected]
.
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