Datasheet 74VHCT86A Datasheet (SGS Thomson Microelectronics)



■ HIGHSPEED:t

■

LOW POWERDISSIPATION:
I

=2 µA (MAX.) atTA=25oC

CC

■

COMPATIBLEWITHTTL OUTPUTS:
V

=2V(MIN),VIL=0.8V(MAX)

IH

■ POWERDOWN PROTECTIONON INPUTS&

=5ns(TYP.)atVCC=5V

PD

OUTPUTS

■ SYMMETRICAL OUTPUTIMPEDANCE:

|I

|=IOL=8 mA (MIN)

OH

■ BALANCEDPROPAGATIONDELAYS:

t

≅ t

PLH

PHL

■

OPERATINGVOLTAGERANGE:
V

(OPR)= 4.5Vto 5.5V

CC

■ PINANDFUNCTIONCOMPATIBLEWITH

74SERIES86

■ IMPROVEDLATCH-UP IMMUNITY

■

LOWNOISE:V

= 0.8V(Max.)

OLP

DESCRIPTION

The 74VHCT86A is an advanced high-speed
CMOS QUAD EXCLUSIVE OR GATE fabricated
with sub-micron silicon gate and double-layer

74VHCT86A

QUAD EXCLUSIVE OR GATE

PRELIMINARY DATA

M

(Micro Package)

(TSSOPPackage)

ORDER CODES :

74VHCT86AM 74VHCT86AT

metalwiring C

2

MOStechnology.

Power down protection is provided on all inputs
and outputs and 0 to 7V can be accepted on
inputs with no regard to the supply voltage. This
devicecan be used to interface5V to 3V.

All inputs and outputs are equipped with
protection circuits against static discharge, giving
them 2KV ESD immunity and transient excess
voltage.

T

PIN CONNECTION AND IEC LOGIC SYMBOLS

August 1999

1/8

74VHCT86A

INPUT EQUIVALENTCIRCUIT

PIN DESCRIPTION

PI N No SYMB OL NAME AND FU NCTION

1, 4, 9, 12 1A to 4A Data Inputs

2, 5, 10, 13 1B to 4B Data Inputs

3, 6, 8, 11 1Y to 4Y Data Outputs

7 GND Ground (0V)

14 V

CC

Positive Supply Voltage

TRUTH TABLE

ABY

LLL

LHH
HLH
HHL

ABSOLUTE MAXIMUM RATINGS

Symb o l Para met er Value U n i t

V

V
V
V

I

I

OK

I

or I

I

CC

T

T

AbsoluteMaximum Ratingsarethose valuesbeyondwhichdamagetothedevicemayoccur. Functionaloperationunderthese conditionisnotimplied.

=0V

1)V

CC

2)HighorLowState

Supply Voltage -0.5 to +7.0 V

CC

DC Input Voltage -0.5 to +7.0 V

I

DC Output Voltage (see note 1) -0.5 to +7.0 V

O

DC Output Voltage (see note 2) -0.5 to VCC+ 0.5 V

O

DC Input Diode Current - 20 mA

IK

DC Output Diode Current ± 20 mA
DC Output Current ± 25 mA

O

DC VCCor Ground Current ± 50 mA

GND

Storage Temperature -65 to +150

stg

Lead Temperature (10 sec) 300

L

o

C

o

C

RECOMMENDEDOPERATINGCONDITIONS

Symb o l Para met er Value Unit

V

V
V
V

T

dt/dv

1)VCC=0V

2)HighorLowState
from0.8Vto 2 V

3)V

IN

2/8

Supply Voltage 4.5 to 5.5 V

CC

Input Voltage 0 to 5.5 V

I

Output Voltage (see note 1) 0 to 5.5 V

O

Output Voltage (see note 2) 0 to V

O

Operating Temperature -40 to +85

op

Input Rise and Fall Time (see note 3) (V

=5.0±0.5V)

CC

CC

0 to 20 ns/V

V

o

C

74VHCT86A

DC SPECIFICATIONS

Symb o l Para met er Test C o n ditio ns Val u e Uni t

T

=25oC -40 to 85oC

A

1.35 1.5 mA

V

V

V

V

I

∆

I

OPD

V

CC

High Level Input

IH

(V)

4.5 to 5.5 2 2 V

Min. Typ. Max. Min. Max.

Voltage
Low Level Input

IL

4.5 to 5.5 0.8 0.8 V

Voltage
High Level Output

OH

Voltage
Low Level Output

OL

Voltage
Input Leakage Current 0 to 5.5 VI= 5.5V or GND ±0.1 ±1.0 µA

I

I

Quiescent Supply

CC

4.5 IO=-50 µA 4.4 4.5 4.4

4.5 I

=-8 mA 3.94 3.8

O

4.5 IO=50µA 0.0 0.1 0.1

4.5 I

=8 mA 0.36 0.44

O

5.5 VI=VCCorGND 2 20 µA

Current
Additional Worst Case

I

CC

Supply Current

5.5 One Input at 3.4V,
other input at V

CC

or

GND

Output Leakage

0V

= 5.5V 0.5 5.0 µA

OUT

Current

V

V

AC ELECTRICALCHARACTERISTICS

(Inputt

r=tf

=3 ns)

Symbol Parameter Test Condition Value Unit

V

(*)

t

Propagation Delay

PLH

t

Time

PHL

(*)Voltagerangeis5V± 0.5V

CC

(V)

C

(pF)

L

Min. Typ. Max. Min. Max.

5.0 15 5.0 7.9 1.0 9.0

5.0

50

=25oC -40 to 85oC

T

A

5.5 7.9 1.0 9.0

ns

CAPACITIVE CHARACTERISTICS

Symb o l Para met er Test C o n ditio ns Val u e Uni t

=25oC -40 to 85oC

T

A

Min. Typ. Max. Min. Max.

Input Capacitance 4 10 10 pF

C

IN

Power Dissipation

C

PD

Capacitance (note 1)

1)CPDisdefinedasthevalueoftheIC’sinternal equivalent capacitance whichiscalculated fromtheoperatingcurrentconsumption withoutload.(Referto
TestCircuit).Averageoperatingcurrentcanbeobtainedbythefollowingequation.I

(opr)=CPD• VCC• fIN+ICC/4(per Gate)

CC

18 pF

3/8

74VHCT86A

DYNAMICSWITCHING CHARACTERISTICS

Symb o l Para met er Test C o n ditio ns Val u e Uni t

T

V

CC

(V)

V
V

V

Dynamic Low Voltage

OLP

Quiet Output (note 1, 2)

OLV

Dynamic High Voltage

IHD

5.0

5.0 2

C

L

=50pF

Min. Typ. Max. Min. Max.

Input (note 1, 3)

V

Dynamic Low Voltage

ILD

5.0 0.8

Input (note 1, 3)

1)Worstcasepackage.

2)Maxnumberofoutputsdefined as(n).Datainputs aredriven0Vto3.0V,(n-1)outputs switching andone outputatGND.

3)Maxnumberofdatainputs (n)switching.(n-1)switching0Vto3.0V.Inputsunder testswitching: 3.0V tothreshold (V

TESTCIRCUIT

=25oC -40 to 85oC

A

0.3 0.8

-0.8 -0.3

),0Vtothreshold(V

ILD

),f=1MHz.

IHD

V

CL= 15/50 pF orequivalent (includes jig and probe capacitance)
R

ofpulsegenerator(typically50Ω)

T=ZOUT

4/8

74VHCT86A

WAVEFORM:PROPAGATIONDELAYS

(f=1MHz;50% duty cycle)

5/8

74VHCT86A

SO-14 MECHANICALDATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 1.75 0.068
a1 0.1 0.2 0.003 0.007
a2 1.65 0.064

b 0.35 0.46 0.013 0.018
b1 0.19 0.25 0.007 0.010

C 0.5 0.019

c1 45 (typ.)

D 8.55 8.75 0.336 0.344

E 5.8 6.2 0.228 0.244

e 1.27 0.050
e3 7.62 0.300

F 3.8 4.0 0.149 0.157

G 4.6 5.3 0.181 0.208

L 0.5 1.27 0.019 0.050

M 0.68 0.026

S 8 (max.)

mm inch

6/8

P013G

TSSOP14 MECHANICAL DATA

74VHCT86A

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 1.1 0.433

A1 0.05 0.10 0.15 0.002 0.004 0.006

A2 0.85 0.9 0.95 0.335 0.354 0.374

b 0.19 0.30 0.0075 0.0118

c 0.09 0.20 0.0035 0.0079

D 4.9 5 5.1 0.193 0.197 0.201

E 6.25 6.4 6.5 0.246 0.252 0.256

E1 4.3 4.4 4.48 0.169 0.173 0.176

e 0.65 BSC 0.0256 BSC

K0

o

o

4

o

8

o

0

o

4

L 0.50 0.60 0.70 0.020 0.024 0.028

o

8

A2

A

A1

PIN 1 IDENTIFICATION

b

e

c

K

L

E

D

E1

1

7/8

74VHCT86A

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