The 74VHCT16373A is an advanced high-speed
CMOS 16 BIT D-TYPE LATCH with 3 STATE
OUTPUTS NON INVERTING fabricated with
sub-micron silicon gate and double-la yer meta l
wiring C
2
MOS technology.
These 16 bit D-TYPE latches are byte controlled
by two latch enable inputs (nLE) and two output
enable inputs(nOE
).
While the nLE input is held at a high level, the nQ
outputs will follow the data (D) inputs.
When the nLE is taken LOW, the nQ outputs will
be latched at the logic level of D data inputs.
When the (nOE
) input is low, the nQ outputs will
be in a normal lo gic s tate (high or low logic level);
when nOE
is at h igh level ,the outputs will be in a
high impedance state.
Power down protection is provided on all inputs
and 0 t o 7V can be accepted on inputs with no
regard to t he supply voltage. This device can be
usedto interface 5V to 3V.
All inputs and outpu ts are equipped with protection circuits against static discharge, giving them
2KV ESD immunity and transient excess vo ltage.
1/10February 2003
Page 2
74VHCT16373A
INPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
PIN NoSYMBOLNAME AND FUNCTION
11OE
2, 3, 5, 6, 8, 9,
11, 12
13,14,16,17,
19, 20, 22, 23
242OE
252LELatch Enable Input
36,35,33,32,
30, 29, 27, 26
47,46,44,43,
41, 40, 38, 37
481LELatch Enable Input
4, 10, 15, 21,
28, 34, 39, 45
7, 18, 31, 42V
1Q0 to 1Q7 3-State Outputs
2Q0 to 2Q7 3-State Outputs
2D0 to 2D7 Data Inputs
1D0 to 1D7 Data Inputs
GNDGround (0V)
CC
3 State Output Enable
Input (Active LOW)
3 State Output Enable
Input (Active LOW)
Positive Supply Voltage
TRUTH TABLE
INPUTSOUTPUT
OE
HXXZ
LLXNO CHANGE *
LHLL
LHH H
X : Don‘tCare
Z : High Impedance
* : Qoutputs are latched at the time when the LE input is taken low
logiclevel.
LEDQ
IEC L OGIC SYMBOLS
2/10
Page 3
LOGIC DIAGRAM
This logic diagram has not to be used to estimate propagation delays
ABSOLUTE MAXIMUM RATINGS
74VHCT16373A
SymbolParameterValueUnit
V
V
V
I
I
OK
I
or I
I
CC
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
Supply Voltage
CC
DC Input Voltage
I
DC Output Voltage-0.5 to VCC+ 0.5
O
DC Input Diode Current
IK
DC Output Diode Current
DC Output Current
O
DC VCCor Ground Current
GND
Storage Temperature
stg
Lead Temperature (10 sec)
L
-0.5 to +7.0V
-0.5 to +7.0V
V
-20mA
± 20mA
± 25mA
± 75mA
-65 to +150°C
300°C
RECOMMENDED OPERATING CONDITIONS
SymbolParameterValueUnit
V
V
V
T
dt/dvInput Rise and Fall Time (note 1) (Vcc= 5.0±0.5V)
Supply Voltage
CC
Input Voltage
I
Output Voltage0 to V
O
Operating Temperature
op
4.5 to 5.5V
0 to 5.5V
CC
-55 to 125°C
0 to 20ns/V
V
1) VINfrom0.8V to 2.0V
3/10
Page 4
74VHCT16373A
DC SPECIFICATIONS
SymbolParameter
V
V
V
I
High Level Input
IH
Voltage
V
Low Level Input
IL
Voltage
High Level Output
OH
Voltage
Low Level Output
OL
Voltage
High Impedance
I
OZ
Output Leakage
Current
Input Leakage
I
I
Current
Quiescent Supply
CC
Current
Test ConditionValue
= 25°C
T
V
CC
(V)
4.5to
5.5
A
Min.Typ. Max.Min.Max. Min. Max.
222V
4.5to
5.5
4.5
4.5
4.5
4.5
5.5
0to
5.5
5.5
IO=-50 µA
=-8 mA
I
O
IO=50 µA
=8 mA
I
O
I=VIH
or V
IL
V
VO=VCCor GND
V
= 5.5V or GND
I
V
I=VCC
or GND
4.44.54.44.4
3.943.83.7
0.00.10.10.1
-40 to 85°C -55 to 125°C
Unit
0.80.80.8V
V
0.360.440.55
V
±0.25± 2.5± 2.5µA
± 0.1± 1± 1µA
44040µA
AC ELECTRICAL CHARACTERISTICS (Input t
Test ConditionValueUnit
SymbolParameter
t
t
t
t
t
t
PZH
t
t
PHZ
t
OSLH
t
OSHL
(*) Voltagerangeis5.0V ± 0.5V
(Note 1 : Parameter guaranteed by design. t
Propagation Delay
PLH
Time
PHL
LE to Qn
Propagation Delay
PLH
Time
PHL
Dn to Qn
Output Enable
PZL
Time
Output Disable
PLZ
Time
t
Pulse Width (LE)
w
HIGH
Setup Time Dn to
t
s
LE HIGH or LOW
Hold Time Dn to LE
t
h
HIGH or LOW
Output to Output
Skew time (note 1)
V
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
C
CC
(V)
L
(pF)
(*)
155.08.519.519.5
(*)
506.09.5110.5110.5
(*)
155.58.519.519.5
(*)
506.29.5110.5110.5
(*)
155.29.5110.5110.5
(*)
506.510.5111.5111.5
(*)
15610.2111.0111.0ns
(**)
50711.2112.0112.0
(*)
(*)
(*)
(*)
501..1.51.5ns
=|t
soLH
pLHm-tpLHn
=3ns)
r=tf
= 25°C
T
A
-40 to 85°C -55 to 125°C
Min.Typ. Max.Min.Max. Min. Max.
555ns
444ns
111ns
|, t
soHL
=|t
pHLm-tpHLn
|
ns
ns
ns
4/10
Page 5
74VHCT16373A
CAPACITIVE CHARACTERISTICS
Test ConditionValue
= 25°C
SymbolParameter
V
CC
(V)
C
C
C
Input Capacitance
IN
Output
OUT
Capacitance
Power Dissipation
PD
Capacitance
5.0
= 10MHz
f
IN
T
A
Min.Typ. Max.Min.Max. Min. Max.
4101010pF
6pF
21pF
(note 1)
1) CPDis defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
DYNAMIC SWITCHING CHARACTERISTICS
Test ConditionValue
= 25°C
SymbolParameter
V
CC
(V)
V
V
Dynamic Low
OLP
Voltage Quiet
OLV
Output (note 1, 2)
5.0
Dynamic High
V
IHD
Voltage Input
5.03.5V
C
L
=50pF
(note 1, 3)
Dynamic Low
V
ILD
Voltage Input
5.01.5V
(note 1, 3)
1) Worst case package.
2) Max number of outputs defined as (n). Data inputs are driven 0V to 5.0V, (n-1) outputs switching and one output at GND.
3) Max number of data inputs (n) switching. (n-1) switching 0V to 5.0V. Inputs under test switching: 5.0V to threshold (V
(V
), f=1MHz.
IHD
T
A
Min.Typ. Max.Min.Max. Min. Max.
0.60.9
-0.9-0.6
-40 to 85°C -55 to 125°C
CC(opr)=CPDxVCCxfIN+ICC
-40 to 85°C -55 to 125°C
), 0V to threshold
ILD
Unit
/n (per Latch)
Unit
V
5/10
Page 6
74VHCT16373A
TEST CIRCUIT
TESTSWITCH
t
PLH,tPHL
t
PZL,tPLZ
t
PZH,tPHZ
CL= 15/50 pF or equivalent (includes jig and probe capacitance)
R
=R1=1KΩ or equivalent
L
R
T=ZOUT
of pulse generator (typically 50Ω)
Open
V
CC
GND
WAVEFORM 1 : LETO Qn PROPAGATION DEL AYS, LEMINIMUMPULSE WIDTH, Dn T O LESETUP
AND HOLD TIMES (f=1MHz; 50% duty cycle)
6/10
Page 7
WAVEFORM 2: OUTPUT ENABLE AND DISABLE TIME (f=1MHz; 50% duty cycle)
74VHCT16373A
WAVEFORM 3 : PROPAGATION DELAY TIME (f=1MHz; 50% duty cycle)
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use o f suc h inf ormat ion n or f or an y infr ingeme nt of paten ts or oth er ri gh ts of third part ies whic h may resul t f rom
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
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