Page 1
QUAD 2-INPUT SCHMITT NAND GATE
■ HIGHSPEED:t
■ LOW POWER DISSIPATION:
=2 µA(MAX.)atTA=25oC
I
CC
■ TYPICALHYSTERESIS:0.7VatV
■ POWERDOWNPROTECTIONON INPUTS&
OUTPUTS
■ SYMMETRICALOUTPUTIMPEDANCE:
|=IOL=8 mA(MIN)
|I
OH
■ BALANCEDPROPAGATIONDELAYS:
t
≅ t
PLH
PHL
■ OPERATINGVOLTAGERANGE:
V
(OPR)= 4.5Vto 5.5V
CC
■ PINANDFUNCTIONCOMPATIBLEWITH
74SERIES132
■ IMPROVEDLATCH-UP IMMUNITY
■ LOWNOISE:V
DESCRIPTION
The 74VHCT132A is an advanced high-speed
CMOS QUAD 2-INPUT SCHMITT NAND GATE
fabricated with sub-micron silicon gate and
double-layermetal wiring C
Power down protection is provided on all inputs
and outputs and 0 to 7V can be accepted on
=6.5ns (TYP.)atVCC=5V
PD
= 4.5V
CC
= 0.8V(Max.)
OLP
2
MOS technology.
74VHCT132A
PRELIMINARY DATA
SOP TSSOP
ORDER CODES
PACKAGE TUBE T & R
SOP 74VHCT132AM 74VHCT132AMTR
TSSOP 74VHCT132ATTR
inputs with no regard to the supply voltage. This
devicecan be used to interface5V to 3V.
Pin configuration and function are the same as
those of the VHCT00A but the VHCT132A has
hysteresis.
This together with its schmitt trigger function
allows it to be used on line receivers with slow
rise/fallinput signals.
All inputs and outputs are equipped with
protection circuits against static discharge, giving
them 2KV ESD immunity and transient excess
voltage.
PIN CONNECTION AND IEC LOGICSYMBOLS
February 2000
1/7
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74VHCT132A
INPUT EQUIVALENTCIRCUIT
PIN DESCRIPTION
PI N No SYMB OL NAME AND F UNCT IO N
1, 4, 9, 12 1A to 4A Data Inputs
2, 5, 10,13 1B to 4B Data Inputs
3, 6, 8, 11 1Y to 4Y Data Outputs
7 GND Ground (0V)
14 V
CC
Positive Supply Voltage
TRUTH TABLE
ABY
LLH
LHH
HLH
HHL
ABSOLUTE MAXIMUM RATINGS
Symb o l Para met er Value U n i t
V
V
V
V
I
I
OK
I
or I
I
CC
T
T
AbsoluteMaximumRatingsarethose valuesbeyond whichdamagetothedevicemayoccur. Functional operationunderthese condition isnot implied.
=0V
1)V
CC
2)Highor LowState
Supply Voltage -0.5 to +7.0 V
CC
DC Input Voltage -0.5 to +7.0 V
I
DC Output Voltage (see note 1) -0.5 to +7.0 V
O
DC Output Voltage (see note 2) -0.5 to VCC+ 0.5 V
O
DC Input Diode Current - 20 mA
IK
DC Output Diode Current ± 20 mA
DC Output Current ± 25 mA
O
DC VCCor Ground Current ± 50 mA
GND
Storage Temperature -65 to +150
stg
Lead Temperature (10 sec) 300
L
o
C
o
C
RECOMMENDED OPERATINGCONDITIONS
Symb o l Para met er Value Unit
V
V
V
V
T
1)VCC=0V
2)Highor LowState
2/7
Supply Voltage 4.5 to 5.5 V
CC
Input Voltage 0 to 5.5 V
I
Output Voltage (see note 1) 0 to 5.5 V
O
Output Voltage (see note 2) 0 to V
O
Operating Temperature -40 to +85
op
CC
V
o
C
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74VHCT132A
DC SPECIFICATIONS
Symb o l Para met er Test Co n diti o ns Val u e Uni t
T
=25oC -40 to 85oC
A
1.35 1.5 mA
µ
V
V
V
I
∆I
I
OPD
V
CC
(V)
High Level Threshold
t+
Voltage
Low Level Threshold
V
t-
Voltage
Hysteresis Voltage 4.5 0.4 1.4 0.4 1.4
V
h
4.5 2.0 2.0
5.5 2.0 2.0
4.5 0.6 0.6
5.5 0.6 0.6
Min. Typ. Max. Min. Max.
5.5 0.4 1.5 0.4 1.5
High Level Output
OH
Voltage
Low Level Output
OL
Voltage
Input Leakage Current 0 to 5.5 VI= 5.5V or GND ±0.1 ±1.0 µA
I
I
Quiescent Supply
CC
4.5 IO=-50µA 4.4 4.5 4.4
4.5 I
=-8 mA 3.94 3.8
O
4.5 IO=50 µ A 0.0 0.1 0.1
4.5 I
=8 mA 0.36 0.44
O
5.5 VI=VCCorGND 2 20 µA
Current
Additional Worst Case
CC
Supply Current
5.5 One Input at 3.4V,
other input at V
CC
or
GND
Output Leakage
0V
= 5.5V 0.5 5.0
OUT
Current
V
V
V
V
V
A
AC ELECTRICAL CHARACTERISTICS (Inputtr=tf=3 ns)
Symbol Parameter Test Conditi on Value Unit
t
Propagation Delay
PLH
t
Time
PHL
(*)Voltagerange is5V± 0.5V
V
(*)
CC
(V)
C
(pF)
L
5.0 15 6.5 8.8 1.0 10.4
5.0
50
T
=25oC -40 to 85oC
A
Min. Typ. Max. Min. Max.
7.2 9.8 1.0 11.4
ns
CAPACITIVE CHARACTERISTICS
Symb o l Para met er Test Co n diti o ns Val u e Uni t
=25oC -40 to 85oC
T
A
Min. Typ. Max. Min. Max.
Input Capacitance 6 10 10
C
IN
Power Dissipation
C
PD
18 pF
Capacitance (note 1)
1)CPDisdefinedas thevalueoftheIC’sinternal equivalent capacitance whichiscalculatedfromtheoperating current consumption without load.(Referto
TestCircuit).Averageoperatingcurrent canbeobtainedbythefollowingequation.I
(opr)=CPD• VCC• fIN+ICC/4(per Gate)
CC
pF
3/7
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74VHCT132A
DYNAMICSWITCHING CHARACTERISTICS
Symb o l Para met er Test Co n diti o ns Val u e Uni t
T
V
CC
(V)
V
V
V
Dynamic Low Voltage
OLP
Quiet Output (note 1, 2)
OLV
Dynamic High Voltage
IHD
5.0
5.0 2.0
C
L
=50pF
Min. Typ. Max. Min. Max.
Input (note 1, 3)
V
Dynamic Low Voltage
ILD
5.0 0.6
Input (note 1, 3)
1)Worstcasepackage.
2)Maxnumber ofoutputsdefined as(n).Datainputsaredriven0V to3.0V,(n -1)outputsswitching andone outputatGND.
3)Maxnumber ofdatainputs (n)switching.(n-1)switching0Vto3.0V.Inputsundertestswitching: 3.0Vtothreshold(V
TESTCIRCUIT
=25oC -40 to 85oC
A
0.3 0.8
-0.8 -0.3
),0Vtothreshold(V
ILD
),f=1MHz.
IHD
V
CL= 15/50 pF or equivalent (includes jig and probe capacitance)
R
ofpulsegenerator(typically50Ω)
T=ZOUT
WAVEFORM: PROPAGATIONDELAYS
4/7
(f=1MHz;50% duty cycle)
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SO-14 MECHANICALDATA
74VHCT132A
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 1.75 0.068
a1 0.1 0.2 0.003 0.007
a2 1.65 0.064
b 0.35 0.46 0.013 0.018
b1 0.19 0.25 0.007 0.010
C 0.5 0.019
c1 45 (typ.)
D 8.55 8.75 0.336 0.344
E 5.8 6.2 0.228 0.244
e 1.27 0.050
e3 7.62 0.300
F 3.8 4.0 0.149 0.157
G 4.6 5.3 0.181 0.208
L 0.5 1.27 0.019 0.050
M 0.68 0.026
S 8 (max.)
mm inch
P013G
5/7
Page 6
74VHCT132A
TSSOP14 MECHANICAL DATA
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 1.1 0.433
A1 0.05 0.10 0.15 0.002 0.004 0.006
A2 0.85 0.9 0.95 0.335 0.354 0.374
b 0.19 0.30 0.0075 0.0118
c 0.09 0.20 0.0035 0.0079
D 4.9 5 5.1 0.193 0.197 0.201
E 6.25 6.4 6.5 0.246 0.252 0.256
E1 4.3 4.4 4.48 0.169 0.173 0.176
e 0.65 BSC 0.0256 BSC
K0
o
o
4
o
8
o
0
o
4
L 0.50 0.60 0.70 0.020 0.024 0.028
o
8
A
PIN 1 IDENTIFICATION
6/7
A2
A1
b
e
c
K
L
E
D
E1
1
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74VHCT132A
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
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