Datasheet 74VHCT02A Datasheet (SGS Thomson Microelectronics)



74VHCT02A

QUAD 2-INPUT NOR GATE

■ HIGH SPEED:t

■

LOW POWERDISSIPATION:
I

=2 µA(MAX.) at TA=25oC

CC

■

COMPATIBLEWITH TTL OUTPUTS:
V

=2V(MIN),VIL=0.8V(MAX)

IH

■ POWERDOWN PROTECTIONON INPUTS&

=3.5ns (TYP.)at VCC=5V

PD

OUTPUTS

■ SYMMETRICALOUTPUT IMPEDANCE:

|I

|=IOL=8mA (MIN)

OH

■ BALANCEDPROPAGATIONDELAYS:

t

≅ t

PLH

PHL

■

OPERATINGVOLTAGERAN GE:
V

(OPR)= 4.5Vto5.5V

CC

■ PINANDFUNCTIONCOMPATIBLEWITH

74SERIES02

■ IMPROVEDLATCH-UPIMMUNITY

■

LOWNOISE:V

= 0.8V(Max.)

OLP

DESCRIPTION

The 74VHCT02A is an advanced high-speed
CMOS QUAD 2-INPUT NOR GATE fabricated
with sub-micron silicon gate and double-layer
metalwiring C

2

MOStechnology.

M

(Micro Package)

(TSSOPPackage)

T

ORDERCODES :

74VHCT02AM 74VHCT02AT

The internal circuit is composed of 3 stages
including buffer output, which provide high noise
immunityand stable output.

Power down protection is provided on all inputs
and outputs and 0 to 7V can be accepted on
inputs with no regard to the supply voltage. This
devicecan be usedto interface5V to 3V.

All inputs and outputs are equipped with
protection circuits against static discharge, giving
them 2KV ESD immunity and transient excess
voltage.

PIN CONNECTION AND IEC LOGIC SYMBOLS

August 1999

1/7

74VHCT02A

INPUT EQUIVALENTCIRCUIT

PIN DESCRIPTION

PI N No SYMB OL NAME AND F U NCTION

2, 5, 8, 11 1A to 4A Data Inputs
3, 6, 9, 12 1B to 4B Data Inputs

1, 4, 10, 13 1Y to 4Y Data Outputs

7 GND Ground (0V)

14 V

CC

Positive Supply Voltage

TRUTH TABLE

ABY

LLH

LHL
HLL
HHL

ABSOLUTE MAXIMUM RATINGS

Symb o l Para met er Value U n i t

V

V
V
V

I

I

OK

I

or I

I

CC

T

T

AbsoluteMaximum Ratingsarethosevaluesbeyond whichdamagetothedevice mayoccur.Functionaloperationunderthese condition isnotimplied.

=0V

1)V

CC

2)HighorLow State

Supply Voltage -0.5 to +7.0 V

CC

DC Input Voltage -0.5 to +7.0 V

I

DC Output Voltage (see note 1) -0.5 to +7.0 V

O

DC Output Voltage (see note 2) -0.5 to VCC+ 0.5 V

O

DC Input Diode Current - 20 mA

IK

DC Output Diode Current ± 20 mA
DC Output Current ± 25 mA

O

DC VCCor Ground Current ± 50 mA

GND

Storage Temperature -65 to +150

stg

Lead Temperature (10 sec) 300

L

o

C

o

C

RECOMMENDED OPERATING CONDITIONS

Symb o l Para met er Value Unit

V

V
V
V

T

dt/dv

1)VCC=0V

2)HighorLow State
from0.8Vto 2 V

3)V

IN

2/7

Supply Voltage 4.5 to 5.5 V

CC

Input Voltage 0 to 5.5 V

I

Output Voltage (see note 1) 0 to 5.5 V

O

Output Voltage (see note 2) 0 to V

O

Operating Temperature -40 to +85

op

Input Rise and Fall Time (see note 3) (V

=5.0±0.5V)

CC

CC

0 to 20 ns/V

V

o

C

74VHCT02A

DC SPECIFICATIONS

Symb o l Para met er Test Conditio ns Val u e Uni t

T

=25oC -40 t o 85oC

A

1.35 1.5 mA

V

V

V

V

I

∆

I

OPD

V

CC

High Level Input

IH

(V)

4.5 to 5.5 2 2 V

Min. Typ. Max. Min. Max.

Voltage
Low Level Input

IL

4.5 to 5.5 0.8 0.8 V

Voltage
High Level Output

OH

Voltage
Low Level Output

OL

Voltage
Input Leakage Current 0 to 5.5 VI= 5.5V or GND ±0.1 ±1.0 µA

I

I

Quiescent Supply

CC

4.5 IO=-50 µ A 4.4 4.5 4.4

4.5 I

=-8 mA 3.94 3.8

O

4.5 IO=50µA 0.0 0.1 0.1

4.5 I

=8 mA 0.36 0.44

O

5.5 VI=VCCorGND 2 20 µA

Current
Additional Worst Case

I

CC

Supply Current

5.5 One Input at 3.4V,
other input at V

CC

or

GND

Output Leakage

0V

= 5.5V 0.5 5.0 µA

OUT

Current

V

V

AC ELECTRICAL CHARACTERISTICS

(Inputt

r=tf

=3 ns)

Symbol Parameter Test Co ndition Value Unit

V

(*)

t

Propagation Delay

PLH

t

Time

PHL

(*)Voltagerangeis5V±0.5V

CC

(V)

C

(pF)

L

Min. Typ. Max. Min. Max.

5.0 15 3.5 5.5 1.0 6.5

5.0

50

=25oC -40 t o 85oC

T

A

4.5 7.5 1.0 8.5

ns

CAPACITIVE CHARACTERISTICS

Symb o l Para met er Test Conditio ns Val u e Uni t

=25oC -40 t o 85oC

T

A

Min. Typ. Max. Min. Max.

Input Capacitance 4 10 10 pF

C

IN

Power Dissipation

C

PD

Capacitance (note 1)

1)CPDisdefinedasthevalueoftheIC’sinternalequivalentcapacitance whichiscalculated fromtheoperating currentconsumption withoutload.(Referto
TestCircuit).Average operating currentcanbeobtainedbythefollowingequation.I

(opr)=CPD• VCC• fIN+ICC/4(perGate)

CC

17 pF

3/7

74VHCT02A

DYNAMICSWITCHING CHARACTERISTICS

Symb o l Para met er Test Conditio ns Val u e Uni t

T

V

CC

(V)

V
V

V

Dynamic Low Voltage

OLP

Quiet Output (note 1, 2)

OLV

Dynamic High Voltage

IHD

5.0

5.0 2

C

L

=50pF

Min. Typ. Max. Min. Max.

Input (note 1, 3)

V

Dynamic Low Voltage

ILD

5.0 0.8

Input (note 1, 3)

1)Worstcasepackage.

2)Max numberofoutputsdefinedas (n).Datainputs aredriven0Vto3.0V,(n -1)outputs switchingandoneoutputatGND.

3)Max numberofdatainputs (n)switching.(n-1)switching0Vto3.0V. Inputsundertestswitching: 3.0Vtothreshold(V

TESTCIRCUIT

=25oC -40 t o 85oC

A

0.3 0.8

-0.8 -0.3

),0Vtothreshold(V

ILD

),f=1MHz.

IHD

V

CL= 15/50pF or equivalent (includes jigand probe capacitance)
R

ofpulsegenerator (typically50Ω)

T=ZOUT

WAVEFORM: PROPAGATION DELAYS

4/7

(f=1MHz;50% duty cycle)

SO-14 MECHANICAL DATA

74VHCT02A

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 1.75 0.068
a1 0.1 0.2 0.003 0.007
a2 1.65 0.064

b 0.35 0.46 0.013 0.018
b1 0.19 0.25 0.007 0.010

C 0.5 0.019

c1 45 (typ.)

D 8.55 8.75 0.336 0.344

E 5.8 6.2 0.228 0.244

e 1.27 0.050
e3 7.62 0.300

F 3.8 4.0 0.149 0.157

G 4.6 5.3 0.181 0.208

L 0.5 1.27 0.019 0.050

M 0.68 0.026

S 8 (max.)

mm inch

P013G

5/7

74VHCT02A

TSSOP14 MECHANICAL DATA

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 1.1 0.433

A1 0.05 0.10 0.15 0.002 0.004 0.006

A2 0.85 0.9 0.95 0.335 0.354 0.374

b 0.19 0.30 0.0075 0.0118

c 0.09 0.20 0.0035 0.0079

D 4.9 5 5.1 0.193 0.197 0.201

E 6.25 6.4 6.5 0.246 0.252 0.256

E1 4.3 4.4 4.48 0.169 0.173 0.176

e 0.65 BSC 0.0256 BSC

K0

o

o

4

o

8

o

0

o

4

L 0.50 0.60 0.70 0.020 0.024 0.028

o

8

A

PIN 1 IDENTIFICATION

6/7

A2

A1

b

e

c

K

L

E

D

E1

1

74VHCT02A

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are notauthorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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