Datasheet 74VHCT00A Datasheet (SGS Thomson Microelectronics)



■ HIGHSPEED:t

■

LOW POWER DISSIPATION:
I

=2 µA (MAX.)at TA=25oC

CC

■ COMPATIBLEWITHTTLOUTPUTS:

=2V(MIN),VIL=0.8V(MAX)

V

IH

■ POWERDOWNPROTECTIONON INPUTS&

=5ns (TYP.)atVCC=5V

PD

OUTPUTS

■ SYMMETRICALOUTPUTIMPEDANCE:

|I

|=IOL=8 mA(MIN)

OH

■

BALANCEDPROPAGATIONDELAYS:

≅ t

t

PLH

PHL

■

OPERATINGVOLTAGERANGE:
V

(OPR)= 4.5Vto 5.5V

CC

■ PINANDFUNCTIONCOMPATIBLEWITH

74SERIES00

■ IMPROVEDLATCH-UPIMMUNITY

■

LOWNOISE:V

= 0.8V(Max.)

OLP

DESCRIPTION

The 74VHCT00A is an advanced high-speed
CMOS QUAD 2-INPUT NAND GATE fabricated
with sub-micron silicon gate and double-layer
metalwiring C

2

MOStechnology.

74VHCT00A

QUAD 2-INPUT NAND GATE

PRELIMINARY DATA

M

(Micro Package)

(TSSOPPackage)

ORDERCODES :

74VHCT00AM 74VHCT00AT

The internal circuit is composed of 3 stages
including buffer output, which provide high noise
immunityand stableoutput.

Power down protection is provided on all inputs
and outputs and 0 to 7V can be accepted on
inputs with no regard to the supply voltage. This
devicecan be used to interface 5V to 3V.

All inputs and outputs are equipped with
protection circuits against static discharge, giving
them 2KV ESD immunity and transient excess
voltage.

T

PIN CONNECTION AND IEC LOGICSYMBOLS

August 1999

1/7

74VHCT00A

INPUT EQUIVALENTCIRCUIT

PIN DESCRIPTION

PI N No SYMB OL NAME AND FU NCTIO N

1, 4, 9, 12 1A to 4A Data Inputs

2, 5, 10,13 1B to 4B Data Inputs

3, 6, 8, 11 1Y to 4Y Data Outputs

7 GND Ground (0V)

14 V

CC

Positive Supply Voltage

TRUTH TABLE

ABY

LLH

LHH
HLH
HHL

ABSOLUTE MAXIMUM RATINGS

Symb o l Para met er Value U n i t

V

V
V
V

I

I

OK

I

or I

I

CC

T

T

AbsoluteMaximumRatingsarethosevaluesbeyondwhichdamageto thedevicemayoccur.Functionaloperationunderthesecondition isnotimplied.

1)V

=0V

CC

2)HighorLowState

Supply Voltage -0.5 to +7.0 V

CC

DC Input Voltage -0.5 to +7.0 V

I

DC Output Voltage (see note 1) -0.5 to +7.0 V

O

DC Output Voltage (see note 2) -0.5 to VCC+ 0.5 V

O

DC Input Diode Current - 20 mA

IK

DC Output Diode Current ± 20 mA
DC Output Current ± 25 mA

O

DC VCCor Ground Current ± 50 mA

GND

Storage Temperature -65 to +150

stg

Lead Temperature (10 sec) 300

L

o

C

o

C

RECOMMENDED OPERATINGCONDITIONS

Symb o l Para met er Value Unit

V

V
V
V

T

dt/dv Input Rise and Fall Time (see note 3) (V

1)VCC=0V

2)HighorLowState
from0.8Vto 2V

3)V

IN

2/7

Supply Voltage 4.5 to 5.5 V

CC

Input Voltage 0 to 5.5 V

I

Output Voltage (see note 1) 0 to 5.5 V

O

Output Voltage (see note 2) 0 to V

O

Operating Temperature -40 to +85

op

=5.0±0.5V) 0 to 20 ns/V

CC

CC

V

o

C

74VHCT00A

DC SPECIFICATIONS

Symb o l Para met er Test C o n dit io ns Val u e Uni t

=25oC -40 to 85oC

T

A

Min. Typ. Max. Min. Max.

0.1

±

1.0

±

1.35 1.5 mA

µ

V

V

V

V

I

∆

I

OPD

V

CC

(V)

High Level Input

IH

4.5 to 5.5 2 2 V

Voltage
Low Level Input

IL

4.5 to 5.5 0.8 0.8 V

Voltage
High Level Output

OH

Voltage
Low Level Output

OL

Voltage
Input Leakage Current 0 to 5.5 VI= 5.5V or GND

I

I

Quiescent Supply

CC

4.5 IO=-50 µA 4.4 4.5 4.4

4.5 I

4.5 IO=50 µ A 0.0 0.1 0.1

4.5 I

5.5 VI=VCCorGND 2 20 µA

Current
Additional Worst Case

I

CC

Supply Current

Output Leakage

5.5 One Input at 3.4V,
other input at V

0V

Current

=-8 mA 3.94 3.8

O

=8 mA 0.36 0.44

O

or

CC

GND

= 5.5V 0.5 5.0 µA

OUT

V

V

A

AC ELECTRICAL CHARACTERISTICS

(Inputt

r=tf

=3 ns)

Symbol Parameter Test Condition Value Unit

t

Propagation Delay

PLH

t

Time

PHL

(*)Voltagerange is5V ± 0.5V

V

(*)

CC

(V)

C

(pF)

L

5.0 15 5.0 7.0 1.0 8.0

5.0 50 5.5 8.0 1.0 9.0

T

=25oC -40 to 85oC

A

Min. Typ. Max. Min. Max.

ns

CAPACITIVE CHARACTERISTICS

Symb o l Para met er Test C o n dit io ns Val u e Uni t

=25oC -40 to 85oC

T

A

Min. Typ. Max. Min. Max.

Input Capacitance 4 10 10

C

IN

Power Dissipation

C

PD

10.5 pF

Capacitance (note 1)

1)CPDisdefined asthevalue oftheIC’sinternal equivalentcapacitance whichiscalculated fromtheoperating currentconsumption without load.(Referto
TestCircuit).Average operatingcurrent canbeobtainedbythefollowingequation.I

(opr)= CPD• VCC•fIN+ICC/4(perGate)

CC

pF

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74VHCT00A

DYNAMICSWITCHING CHARACTERISTICS

Symb o l Para met er Test C o n dit io ns Val u e Uni t

=25oC -40 to 85oC

V

CC

(V)

V
V

V

Dynamic Low Voltage

OLP

Quiet Output (note 1, 2)

OLV

Dynamic High Voltage

IHD

5.0

5.0 2.0

C

L

=50pF

Input (note 1, 3)

V

Dynamic Low Voltage

ILD

5.0 0.8

Input (note 1, 3)

1)Worstcasepackage.

2)Maxnumberofoutputsdefined as(n).Datainputs aredriven0Vto3.0,(n-1)outputs switching andoneoutput atGND.

3)Maxnumberofdatainputs (n)switching.(n-1) switching0Vto3.0V.Inputsundertestswitching: 3.0V tothreshold (V

TESTCIRCUIT

T

A

Min. Typ. Max. Min. Max.

0.4 0.8

-0.8 -0.4

),0Vtothreshold(V

ILD

),f=1MHz.

IHD

V

CL= 15/50 pF orequ ivalent (includes jigand probe capacitance)
R

ofpulse generator (typically50Ω)

T=ZOUT

WAVEFORM:PROPAGATIONDELAYS (f=1MHz; 50% duty cycle)

4/7

SO-14 MECHANICALDATA

74VHCT00A

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 1.75 0.068
a1 0.1 0.2 0.003 0.007
a2 1.65 0.064

b 0.35 0.46 0.013 0.018
b1 0.19 0.25 0.007 0.010

C 0.5 0.019

c1 45 (typ.)

D 8.55 8.75 0.336 0.344

E 5.8 6.2 0.228 0.244

e 1.27 0.050
e3 7.62 0.300

F 3.8 4.0 0.149 0.157

G 4.6 5.3 0.181 0.208

L 0.5 1.27 0.019 0.050

M 0.68 0.026

S 8 (max.)

mm inch

P013G

5/7

74VHCT00A

TSSOP14 MECHANICAL DATA

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 1.1 0.433

A1 0.05 0.10 0.15 0.002 0.004 0.006

A2 0.85 0.9 0.95 0.335 0.354 0.374

b 0.19 0.30 0.0075 0.0118

c 0.09 0.20 0.0035 0.0079

D 4.9 5 5.1 0.193 0.197 0.201

E 6.25 6.4 6.5 0.246 0.252 0.256

E1 4.3 4.4 4.48 0.169 0.173 0.176

e 0.65 BSC 0.0256 BSC

K0

o

o

4

o

8

o

0

o

4

L 0.50 0.60 0.70 0.020 0.024 0.028

o

8

A

PIN 1 IDENTIFICATION

6/7

A2

A1

b

e

c

K

L

E

D

E1

1

74VHCT00A

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are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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