Datasheet 74VHC08TTR, 74VHC08MTR, 74VHC08M Datasheet (SGS Thomson Microelectronics)

Page 1
74VHC08
QUAD 2-INPUT AND GATE
HIGH SPEED: t
LOW POWER DISSIPATION:
I
= 2 µA (MAX.) at TA=25°C
CC
HIGH NOISE IMMUNITY:
V
= V
NIH
POWER DOWN PROTECTION ON INPUTS
SYMMETRICAL OUTPUT IMPED ANCE:
|I
| = IOL = 8mA (MIN)
OH
BALANCED PROPAGATION DELAYS:
t
t
PLH
OPERATING VOLTAGE RANGE:
V
(OPR) = 2V to 5.5V
CC
PIN AND FUNCTION COMPATIBLE WITH
= 28% VCC (MIN.)
NIL
PHL
= 4.3 ns (TYP.) at VCC = 5V
PD
74 SERIES 08
IMPROVED LATCH-UP IMMUNITY
LOW NOISE: V
= 0.8V (MAX.)
OLP
DESCRIPTION
The 74VHC08 is a n advanced high-speed CM OS QUAD 2-INPUT AND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C
2
MOS technology. The internal circuit is composed of 2 stages including buffer ou tput, which provides high noise immunity and stable output.
TSSOPSOP
ORDER CODES
PACKAGE TUBE T & R
SOP 74VHC08M 74VHC08MTR
TSSOP 74VHC08TTR
Power down protection is provided on all inputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V. All inputs and outputs are equipped with protection circuits against stat ic discharge, giving them 2KV ESD immunity and transient excess voltage.
PIN CONNECTION AND IEC LOGIC SYMBOLS
1/8June 2001
Page 2
74VHC08
INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
PIN No SYMBOL NAME AND FUNCTION
1, 4, 9, 12 1A to 4A Data Inputs
2, 5, 10, 13 1B to 4B Data Inputs
3, 6, 8, 11 1Y to 4Y Data Outputs
7 GND Ground (0V)
14
V
CC
TRUTH TABLE
ABY
LLL
LHL HLL HHH
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
I
OK
I
I
or I
CC
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied
Supply Voltage
CC
DC Input Voltage
I
DC Output Voltage -0.5 to VCC + 0.5
O
DC Input Diode Current
IK
DC Output Diode Current DC Output Current
O
DC VCC or Ground Current
GND
Storage Temperature
stg
Lead Temperature (10 sec)
L
Positive Supply Voltage
-0.5 to +7.0 V
-0.5 to +7.0 V V
- 20 mA
± 20 mA ± 25 mA ± 50 mA
-65 to +150 °C
300 °C
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Value Unit
V
V
V
T
dt/dv
1) VIN from 30 % to 70% of V
2/8
Supply Voltage
CC
Input Voltage
I
Output Voltage 0 to V
O
Operating Temperature
op
Input Rise and Fall Time (note 1) (V (V
CC
= 3.3 ± 0.3V)
CC
= 5.0 ± 0.5V)
CC
2 to 5.5 V 0 to 5.5 V
CC
-55 to 125 °C 0 to 100
0 to 20
V
ns/V
Page 3
DC SPECIFICATIONS
Symbol Parameter
V
V
V
V
I
High Level Input
IH
Voltage
Low Level Input
IL
Voltage
High Level Output
OH
Voltage
Low Level Output
OL
Voltage
I
Input Leakage
I
Current Quiescent Supply
CC
Current
Test Condition Value
V
(V)
CC
= 25°C
A
Min. Typ. Max. Min. Max. Min. Max.
-40 to 85°C -55 to 125°C
T
2.0 1.5 1.5 1.5
3.0 to
5.5
0.7V
CC
0.7V
CC
0.7V
CC
2.0 0.5 0.5 0.5
3.0 to
5.5
2.0
3.0
4.5
3.0
4.5
2.0
3.0
4.5
3.0
4.5
0 to
5.5
5.5
=-50 µA
I
O
I
=-50 µA
O
I
=-50 µA
O
I
=-4 mA
O
I
=-8 mA
O
IO=50 µA I
=50 µA
O
I
=50 µA
O
I
=4 mA
O
I
=8 mA
O
V
= 5.5V or GND
I
= VCC or GND
V
I
1.9 2.0 1.9 1.9
2.9 3.0 2.9 2.9
4.4 4.5 4.4 4.4
2.58 2.48 2.4
3.94 3.8 3.7
0.3V
CC
0.3V
CC
0.0 0.1 0.1 0.1
0.0 0.1 0.1 0.1
0.0 0.1 0.1 0.1
0.36 0.44 0.55
0.36 0.44 0.55
± 0.1 ± 1 ± 1 µA
22020µA
74VHC08
Unit
0.3V
CC
V
V
V
V
AC ELECTRICAL CHARACTERISTICS (Input t
Test Condition Value
Symbol Parameter
t
Propagation Delay
PLH PHL
Time
0.5V
t
(*) Vol tage range is 3. 3V ± 0.3V (**) Voltage range is 5.0V ±
V
3.3
3.3
5.0
5.0
C
CC
(V)
L
(pF)
(*)
15 6.2 8.8 1.0 10.5 1.0 10.5
(*)
50 8.7 12.3 1.0 14.0 1.0 14.0
(**)
15 4.3 5.9 1.0 7.0 1.0 7.0
(**)
50 5.8 7.9 1.0 9.0 1.0 9.0
= tf = 3ns)
r
= 25°C
T
A
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
Unit
ns
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Page 4
74VHC08
CAPACITIVE CHARACTERISTICS
Test Condition Value
= 25°C
Symbol Parameter
T
A
Min. Typ. Max. Min. Max. Min. Max.
C
C
Input Capacitance
IN
Power Dissipation
PD
Capacitance
6101010pF
15 pF
(note 1)
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
DYNAMIC SWITCHING CHARACTERISTICS
Test Condition Value
= 25°C
Symbol Parameter
V
CC
(V)
V V
Dynamic Low
OLP
Voltage Quiet
OLV
Output (note 1, 2)
5.0
Dynamic High
V
IHD
Voltage Input
5.0 3.5 V
= 50 pF
C
L
(note 1, 3) Dynamic Low
V
ILD
Voltage Input
5.0 1.5 V
(note 1, 3)
1) Worst c ase package .
2) Max number of outp ut s defined as (n). Data inputs are driven 0V to 5.0V, (n-1) outputs switching and one output at GND.
3) Max number of data inputs (n) switching. (n-1) switching 0V to 5.0V. Inputs under test switching: 5.0V to threshold (V (V
), f=1MHz.
IHD
T
A
Min. Typ. Max. Min. Max. Min. Max.
0.3 0.8
-0.8 -0.3
-40 to 85°C -55 to 125°C
= CPD x VCC x fIN + ICC/4 (per gate)
CC(opr)
-40 to 85°C -55 to 125°C
), 0V to threshold
ILD
Unit
Unit
V
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Page 5
TEST CIRCUIT
CL = 15/50pF or e qui valent (includes jig and probe capa ci t ance)
= Z
R
of pulse generator (typically 50)
T
OUT
WAVEFORM: PROPAGATION DELAYS (f=1MHz; 50% duty cycle)
74VHC08
5/8
Page 6
74VHC08
SO-14 MECHANICAL DATA
DIM.
A 1.75 0.068 a1 0.1 0.2 0.003 0.007 a2 1.65 0.064
b 0.35 0.46 0.013 0.018 b1 0.19 0.25 0.007 0.010
C 0.5 0.019
c1 45° (typ.)
D 8.55 8.75 0.336 0.344 E 5.8 6.2 0.228 0.244
e 1.27 0.050 e3 7.62 0.300
F 3.8 4.0 0.149 0.157 G 4.6 5.3 0.181 0.208
L 0.5 1.27 0.019 0.050
M 0.68 0.026 S8° (max.)
MIN. TYP MAX. MIN. TYP. M AX.
mm. inch
6/8
PO13G
Page 7
74VHC08
TSSOP14 MECHANICAL DATA
mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. M AX.
A 1.2 0.047
A1 0.05 0.15 0.002 0.004 0.006
A2 0.8 1 1.05 0.031 0.039 0.041
b 0.19 0.30 0.007 0.012
c 0.09 0.20 0.004 0.0089
D 4.9 5 5.1 0.193 0.197 0.201
E 6.2 6.4 6.6 0.244 0.252 0.260
E1 4.3 4.4 4.48 0.169 0.173 0.176
e 0.65 BSC 0.0256 BSC
K0° 8°0° 8°
L 0.45 0.60 0.75 0.018 0.024 0.030
A2
A
A1
b
e
c
K
L
E
D
E1
PIN 1 IDENTIFICATION
1
0080337D
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Page 8
74VHC08
Information furnished is bel ieved to be accurate and reliable. However, STMicroe lectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No li cense is granted by implication or otherwise unde r any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication ar e subject to change without notice. This publication supersedes and replaces all information previously supplied. S TMicroelectronics products are not authorized for use as critica l components in life suppo rt devices or systems without express written approval of STMicroelectronics.
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