Datasheet 74VHC04 Datasheet (SGS Thomson Microelectronics)



■ HIGHSPEED:t

■

LOW POWER DISSIPATION:
I

=2 µA (MAX.)at TA=25oC

CC

■

HIGHNOISEIMMUNITY:
V

NIH=VNIL

■ POWERDOWNPROTECTIONON INPUTS

■

SYMMETRICALOUTPUTIMPEDANCE:
|I

|=IOL=8 mA(MIN)

OH

■ BALANCEDPROPAGATIONDELAYS:

t

≅ t

PLH

■ OPERATINGVOLTAGERANGE:

(OPR)= 2Vto5.5V

V

CC

■ PINANDFUNCTIONCOMPATIBLEWITH

=28%VCC(MIN.)

PHL

=3.8ns(TYP.)atVCC=5V

PD

74SERIES04

■ IMPROVEDLATCH-UPIMMUNITY

■ LOWNOISE:V

= 0.8V(Max.)

OLP

DESCRIPTION

The 74VHC04 is an advanced high-speedCMOS
HEX INVERTER fabricated with sub-micron
silicon gate and double-layermetal wiring C

2

MOS

technology.

74VHC04

HEX INVERTER

PRELIMINARY DATA

M

(Micro Package)

(TSSOPPackage)

ORDERCODES :

74VHC04M 74VHC04T

The internal circuit is composed of 3 stages
including buffer output, which provide high noise
immunityand stableoutput.

Power down protection is provided on all inputs
and 0 to 7V can be accepted on inputs with no
regard to the supply voltage. This device can be
used to interface 5V to 3V.

All inputs and outputs are equipped with
protection circuits against static discharge, giving
them 2kV ESD immunity and transient excess
voltage.

T

PIN CONNECTION AND IEC LOGICSYMBOLS

June 1999

1/7

74VHC04

INPUT EQUIVALENTCIRCUIT

PIN DESCRIPTION

PI N No SYMB OL NAME AND FUNCTIO N

1, 3, 5, 9,

1A to 6A Data Inputs

11, 13

2, 4, 6, 8,

1Y to 6Y Data Outputs

10, 12

7 GND Ground (0V)

14 V

CC

Positive Supply Voltage

TRUTH TABLE

AY

LH

HL

ABSOLUTE MAXIMUM RATINGS

Symb o l Para met er Val u e Uni t

V

V

V

I

I

OK

I

or I

I

CC

T

T

AbsoluteMaximumRatingsarethosevaluesbeyondwhichdamageto thedevicemayoccur.Functionaloperation underthesecondition isnotimplied.

Supply Voltage -0.5 to +7.0 V

CC

DC Input Voltage -0.5 to +7.0 V

I

DC Output Voltage -0.5 to VCC+ 0.5 V

O

DC Input Diode Current - 20 mA

IK

DC Output Diode Current
DC Output Current

O

DC VCCor Ground Current

GND

Storage Temperature -65 to +150

stg

Lead Temperature (10 sec) 300

L

20 mA

±

25 mA

±

75 mA

±

o

C

o

C

RECOMMENDED OPERATINGCONDITIONS

Symb o l Para met er Value Un it

V

V

V

T

dt/dv

1)VINfrom30%to70%of V

2/7

Supply Voltage 2.0 to 5.5 V

CC

Input Voltage 0 to 5.5 V

I

Output Voltage 0 to V

O

Operating Temperature -40 to +85

op

(V

CC
CC

=3.3±0.3V)
=5.0±0.5V)

Input Rise and Fall Time (see note 1) (V

CC

CC

0 to 100

0to20

V

o

C

ns/V
ns/V

74VHC04

DC SPECIFICATIONS

Symb o l Para met er Test C on dit i o ns Val u e Uni t

T

V

CC

(V)

High Level Input

V

IH

Voltage

V

Low Level Input

IL

Voltage

V

High Level Output

OH

Voltage

Low Level Output

V

OL

Voltage

Input Leakage Current 0 to 5.5 VI= 5.5V or GND ±0.1 ±1.0 µA

I

I

Quiescent Supply

I

CC

2.0 1.5 1.5

3.0 to 5.5 0.7V

2.0 0.5 0.5

3.0 to 5.5 0.3V

2.0 IO=-50 µA 1.9 2.0 1.9

3.0 I

4.5 I

3.0 I

4.5 I

=-50µA 2.9 3.0 2.9

O

=-50µA 4.4 4.5 4.4

O

=-4 mA 2.58 2.48

O

=-8 mA 3.94 3.8

O

2.0 IO=50 µA 0.0 0.1 0.1

3.0 I

4.5 I

3.0 I

4.5 I

=50µA 0.0 0.1 0.1

O

=50µA 0.0 0.1 0.1

O

=4 mA 0.36 0.44

O

=8 mA 0.36 0.44

O

5.5 VI=VCCorGND 2 20 µA

Min. Typ. Max. Min. Max.

Current

=25oC -40 to 85oC

A

CC

0.7V

CC

CC

0.3V

CC

V

V

V

V

AC ELECTRICAL CHARACTERISTICS (Input tr=tf=3 ns)

Symbol Parameter Test Condition Value Unit

t

Propagation Delay

PLH

t

Time

PHL

(*) Voltagerangeis 3.3V± 0.3V
(**) Voltagerangeis 5V± 0.5V

V

3.3

3.3

5.0

5.0

CC

(V)

(**)
(**)

C

L

(pF)

(*)
(*)

15 5.0 7.1 1.0 8.5
50 7.5 10.6 1.0 12.0

T

=25oC -40 to 85oC

A

Min. Typ. Max. Min. Max.

ns

15 3.8 5.5 1.0 6.5
50 5.3 7.5 1.0 8.5

CAPACITIVE CHARACTERISTICS

Symb o l Para met er Test C on dit i o ns Val u e Uni t

=25oC -40 to 85oC

T

A

Min. Typ. Max. Min. Max.

Input Capacitance 4 10 10

C

IN

Power Dissipation

C

PD

19 pF

Capacitance (note 1)

1)CPDisdefined asthevalue oftheIC’sinternal equivalentcapacitance whichis calculated fromtheoperatingcurrent consumptionwithout load.(Referto
TestCircuit).Average operatingcurrent canbeobtainedbythefollowingequation.I

(opr)= CPD• VCC• fIN+ICC/4(perGate)

CC

pF

3/7

74VHC04

DYNAMICSWITCHING CHARACTERISTICS

Symb o l Para met er Test C on dit i o ns Val u e Uni t

T

V

CC

(V)

V
V

V

Dynamic Low Voltage

OLP

Quiet Output (note 1, 2)

OLV

Dynamic High Voltage

IHD

5.0

5.0 3.5

C

L

=50pF

Min. Typ. Max. Min. Max.

Input (note 1, 3)

V

Dynamic Low Voltage

ILD

5.0 1.5

Input (note 1, 3)

1)Worstcasepackage.

2)Maxnumberofoutputsdefined as(n).Datainputs aredriven 0Vto5.0V,(n -1)outputsswitching andoneoutputatGND.

3)Maxnumberofdatainputs (n)switching. (n-1)switching0V to5.0V.Inputsundertestswitching: 5.0Vtothreshold(V

TESTCIRCUIT

=25oC -40 to 85oC

A

0.3 0.8

-0.8 -0.3

),0Vtothreshold(V

ILD

),f=1MHz.

IHD

V

CL= 15/50 pF orequ ivalent (includes jigand probe capacitance)
R

ofpulse generator (typically50Ω)

T=ZOUT

WAVEFORM:PROPAGATIONDELAYS

4/7

(f=1MHz;50% duty cycle)

SO-14 MECHANICALDATA

74VHC04

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 1.75 0.068
a1 0.1 0.2 0.003 0.007
a2 1.65 0.064

b 0.35 0.46 0.013 0.018
b1 0.19 0.25 0.007 0.010

C 0.5 0.019

c1 45 (typ.)

D 8.55 8.75 0.336 0.344

E 5.8 6.2 0.228 0.244

e 1.27 0.050
e3 7.62 0.300

F 3.8 4.0 0.149 0.157

G 4.6 5.3 0.181 0.208

L 0.5 1.27 0.019 0.050

M 0.68 0.026

S 8 (max.)

mm inch

P013G

5/7

74VHC04

TSSOP14 MECHANICAL DATA

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 1.1 0.433

A1 0.05 0.10 0.15 0.002 0.004 0.006

A2 0.85 0.9 0.95 0.335 0.354 0.374

b 0.19 0.30 0.0075 0.0118

c 0.09 0.20 0.0035 0.0079

D 4.9 5 5.1 0.193 0.197 0.201

E 6.25 6.4 6.5 0.246 0.252 0.256

E1 4.3 4.4 4.48 0.169 0.173 0.176

e 0.65 BSC 0.0256 BSC

K0

o

o

4

o

8

o

0

o

4

L 0.50 0.60 0.70 0.020 0.024 0.028

o

8

A

PIN 1 IDENTIFICATION

6/7

A2

A1

b

e

c

K

L

E

D

E1

1

74VHC04

Information furnished is believed to beaccurate and reliable. However, STMicroelectronics assumes no responsibility forthe consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in thispublication are
subject tochange without notice. Thispublication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

The ST logo is a trademark of STMicroelectronics

1999 STMicroelectronics – Printed in Italy –All Rights Reserved

STMicroelectronics GROUP OF COMPANIES

Australia - Brazil - Canada - China -France -Germany - Italy - Japan - Korea -Malaysia - Malta - Mexico - Morocco - The Netherlands -

Singapore - Spain -Sweden - Switzerland- Taiwan - Thailand - UnitedKingdom -U.S.A.

http://www.st.com

.

7/7