The 74VHC03 is an advanced high-speedCMOS
QUAD 2-INPUT OPEN DRAIN NAND GATE
fabricated with sub-micron silicon gate and
double-layermetal wiring C
The internal circuit is composed of 3 stages
including buffer output, which provides high noise
immunityand stableoutput.
This device can, with an external pull-up resistor,
=3.7ns(TYP.)atVCC=5V
PD
= 0.8V(Max.)
OLP
2
MOS technology.
74VHC03
PRELIMINARY DATA
M
(Micro Package)
(TSSOPPackage)
ORDERCODES :
74VHC03M74VHC03T
be used in wired AND configuration. This device
can also be used as a led driver and in anyother
applicationrequiring a currentsink.
Power down protection is provided on all inputs
and 0 to 7V can be accepted on inputs with no
regard to the supply voltage. This device can be
used to interface 5V to 3V.
All inputs andoutputs are equipped with
protection circuits against static discharge, giving
them 2kV ESD immunity and transient excess
voltage.
CL= 15/50 pF orequ ivalent (includes jigand probe capacitance)
R
=1KΩ orequivalent
L=R1
R
ofpulse generator (typically50Ω)
T=ZOUT
WAVEFORM:PROPAGATIONDELAYS
4/7
(f=1MHz;50% duty cycle)
Page 5
SO-14 MECHANICALDATA
74VHC03
DIM.
MIN.TYP.MAX.MIN.TYP.MAX.
A1.750.068
a10.10.20.0030.007
a21.650.064
b0.350.460.0130.018
b10.190.250.0070.010
C0.50.019
c145 (typ.)
D8.558.750.3360.344
E5.86.20.2280.244
e1.270.050
e37.620.300
F3.84.00.1490.157
G4.65.30.1810.208
L0.51.270.0190.050
M0.680.026
S8 (max.)
mminch
P013G
5/7
Page 6
74VHC03
TSSOP14 MECHANICAL DATA
DIM.
mminch
MIN.TYP.MAX.MIN.TYP.MAX.
A1.10.433
A10.050.100.150.0020.0040.006
A20.850.90.950.3350.3540.374
b0.190.300.00750.0118
c0.090.200.00350.0079
D4.955.10.1930.1970.201
E6.256.46.50.2460.2520.256
E14.34.44.480.1690.1730.176
e0.65 BSC0.0256BSC
K0
o
o
4
o
8
o
0
o
4
L0.500.600.700.0200.0240.028
o
8
A
PIN 1 IDENTIFICATION
6/7
A2
A1
b
e
c
K
L
E
D
E1
1
Page 7
74VHC03
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