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74VHC00
QUAD 2-INPUT NAND GATE
■ HIGH SPEED: t
■ LOW POWER DISSIPATION:
I
= 2 µA (MAX.) at TA=25°C
CC
■ HIGH NOISE IMMUNITY:
V
= V
NIH
■ POWER DOWN PROTECTION ON INPUTS
■ SYMMETRICAL OUTPUT IMPEDANCE:
|I
| = IOL = 8mA (MIN)
OH
■ BALANCED PROPAGATION DELAYS:
t
≅ t
PLH
■ OPERATING VOLTAGE RANGE:
V
(OPR) = 2V to 5.5V
CC
■ PIN AND FUNCTION COMPATIBLE WITH
= 28% VCC (MIN.)
NIL
PHL
= 3.7ns (TYP.) at VCC = 5V
PD
74 SERIES 00
■ IMPROVED LATCH-UP IMMUNITY
■ LOW NOISE: V
= 0.8V (MAX.)
OLP
DESCRIPTION
The 74VHC00 is a n advanced high-speed CM OS
QUAD 2-INPUT NAND GATE fabricated with
sub-micron silicon gate and double-layer metal
wiring C
2
MOS technology.
The internal circuit is composed of 3 stages
including buffer ou tput, which provides high no ise
immunity and stable output.
TSSOPSOP
ORDER CODES
PACKAGE TUBE T & R
SOP 74VHC00M 74VHC00MTR
TSSOP 74VHC00TTR
Power down protection is provided on all inputs
and 0 to 7V can be accepted on inputs with no
regard to the supply voltage. This device can be
used to interface 5V to 3V.
All inputs and outputs are equipped with
protection circuits against stat ic discharge, giving
them 2KV ESD immunity and transient excess
voltage.
PIN CONNECTION AND IEC LOGIC SYMBOLS
1/8June 2001
Page 2
74VHC00
INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
PIN No SYMBOL NAME AND FUNCTION
1, 4, 9, 12 1A to 4A Data Inputs
2, 5, 10, 13 1B to 4B Data Inputs
3, 6, 8, 11 1Y to 4Y Data Outputs
7 GND Ground (0V)
14
V
CC
TRUTH TABLE
ABY
LLH
LHH
HLH
HHL
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
I
OK
I
I
or I
CC
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
Supply Voltage
CC
DC Input Voltage
I
DC Output Voltage -0.5 to VCC + 0.5
O
DC Input Diode Current
IK
DC Output Diode Current
DC Output Current
O
DC VCC or Ground Current
GND
Storage Temperature
stg
Lead Temperature (10 sec)
L
Positive Supply Voltage
-0.5 to +7.0 V
-0.5 to +7.0 V
V
- 20 mA
± 20 mA
± 25 mA
± 50 mA
-65 to +150 °C
300 °C
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Value Unit
V
V
V
T
dt/dv
1) VIN from 30 % to 70% of V
2/8
Supply Voltage
CC
Input Voltage
I
Output Voltage 0 to V
O
Operating Temperature
op
Input Rise and Fall Time (note 1) (V
(V
CC
= 3.3 ± 0.3V)
CC
= 5.0 ± 0.5V)
CC
2 to 5.5 V
0 to 5.5 V
CC
-55 to 125 °C
0 to 100
0 to 20
V
ns/V
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DC SPECIFICATIONS
Symbol Parameter
V
V
V
V
I
High Level Input
IH
Voltage
Low Level Input
IL
Voltage
High Level Output
OH
Voltage
Low Level Output
OL
Voltage
I
Input Leakage
I
Current
Quiescent Supply
CC
Current
Test Condition Value
V
(V)
CC
= 25°C
A
Min. Typ. Max. Min. Max. Min. Max.
-40 to 85°C -55 to 125°C
T
2.0 1.5 1.5 1.5
3.0 to
5.5
0.7V
CC
0.7V
CC
0.7V
CC
2.0 0.5 0.5 0.5
3.0 to
5.5
2.0
3.0
4.5
3.0
4.5
2.0
3.0
4.5
3.0
4.5
0 to
5.5
5.5
=-50 µA
I
O
I
=-50 µA
O
I
=-50 µA
O
I
=-4 mA
O
I
=-8 mA
O
IO=50 µA
I
=50 µA
O
I
=50 µA
O
I
=4 mA
O
I
=8 mA
O
V
= 5.5V or GND
I
= VCC or GND
V
I
1.9 2.0 1.9 1.9
2.9 3.0 2.9 2.9
4.4 4.5 4.4 4.4
2.58 2.48 2.4
3.94 3.8 3.7
0.3V
CC
0.3V
CC
0.0 0.1 0.1 0.1
0.0 0.1 0.1 0.1
0.0 0.1 0.1 0.1
0.36 0.44 0.55
0.36 0.44 0.55
± 0.1 ± 1 ± 1 µA
22020µA
74VHC00
Unit
0.3V
CC
V
V
V
V
AC ELECTRICAL CHARACTERISTICS (Input t
= tf = 3ns)
r
Test Condition Value
= 25°C
Symbol Parameter
t
PLH tPHL
(*) Vol tage range is 3.3V ± 0.3V
(**) Voltage range is 5.0V ±
Propagation Delay
Time
0.5V
V
3.3
3.3
5.0
5.0
C
CC
(V)
L
(pF)
(*)
15 5.5 7.9 1.0 9.5 1.0 9.5
(*)
50 8.0 11.4 1.0 13.0 1.0 13.0
(**)
15 3.7 5.5 1.0 6.5 1.0 6.5
(**)
50 5.2 7.5 1.0 8.5 1.0 8.5
T
A
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
Unit
ns
CAPACITIVE CHARACTERISTICS
Test Condition Value
= 25°C
Symbol Parameter
T
A
Min. Typ. Max. Min. Max. Min. Max.
C
C
Input Capacitance
IN
Power Dissipation
PD
Capacitance
6101010pF
19 pF
(note 1)
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
-40 to 85°C -55 to 125°C
= CPD x VCC x fIN + ICC/4 (per gate)
CC(opr)
Unit
3/8
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74VHC00
DYNAMIC SWITCHING CHARACTERISTICS
Test Condition Value
T
Symbol Parameter
V
V
Dynamic Low
OLP
Voltage Quiet
OLV
Output (note 1, 2)
V
CC
(V)
5.0
= 25°C
A
Min. Typ. Max. Min. Max. Min. Max.
0.3 0.8
-0.8 -0.3
Dynamic High
V
IHD
Voltage Input
5.0 3.5 V
= 50 pF
C
L
(note 1, 3)
Dynamic Low
V
ILD
Voltage Input
5.0 1.5 V
(note 1, 3)
1) Worst c ase package.
2) Max number of output s defined as (n). Data inputs ar e driven 0V to 5.0V, (n-1) outputs switchin g and one output at GND.
3) Max number of data inputs (n) switching. (n-1) switching 0V to 5.0V. Inputs under test switching: 5.0V to threshold (V
(V
), f=1MHz.
IHD
TEST CIRCUIT
-40 to 85°C -55 to 125°C
ILD
Unit
V
), 0V to threshold
CL =15/50pF or equivalent (includes jig an d probe capaci ta nce)
R
= Z
of pulse generator (typically 50Ω)
T
OUT
4/8
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WAVEFORM: PROPAGATION DELAYS (f=1MHz; 50% duty cycle)
74VHC00
5/8
Page 6
74VHC00
SO-14 MECHANICAL DATA
DIM.
A 1.75 0.068
a1 0.1 0.2 0.003 0.007
a2 1.65 0.064
b 0.35 0.46 0.013 0.018
b1 0.19 0.25 0.007 0.010
C 0.5 0.019
c1 45° (typ.)
D 8.55 8.75 0.336 0.344
E 5.8 6.2 0.228 0.244
e 1.27 0.050
e3 7.62 0.300
F 3.8 4.0 0.149 0.157
G 4.6 5.3 0.181 0.208
L 0.5 1.27 0.019 0.050
M 0.68 0.026
S8° (max.)
MIN. TYP MAX. MIN. TYP. M AX.
mm. inch
6/8
PO13G
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74VHC00
TSSOP14 MECHANICAL DATA
mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. M AX.
A 1.2 0.047
A1 0.05 0.15 0.002 0.004 0.006
A2 0.8 1 1.05 0.031 0.039 0.041
b 0.19 0.30 0.007 0.012
c 0.09 0.20 0.004 0.0089
D 4.9 5 5.1 0.193 0.197 0.201
E 6.2 6.4 6.6 0.244 0.252 0.260
E1 4.3 4.4 4.48 0.169 0.173 0.176
e 0.65 BSC 0.0256 BSC
K0° 8°0° 8°
L 0.45 0.60 0.75 0.018 0.024 0.030
A2
A
A1
b
e
c
K
L
E
D
E1
PIN 1 IDENTIFICATION
1
0080337D
7/8
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74VHC00
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consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No li cense is granted by implica tion or otherwise under any patent or patent righ ts of S TMic roelec tronics. Specifications
mentioned in this publication ar e subject to change without notice. This publication supersedes and replaces all information
previously supplied. S TMicroelectronics products are not authorized for use as critica l components in life suppo rt devices or
systems without express written approval of STMicroelectronics.
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