The 74VCXR162245 is a low voltage CMOS 16
BIT BUS TRANSCEIVER (3-STATE) fabricated
with sub-micron silicon gate and five-layer metal
wiring C
2
MOS technology. It is ideal for low power
and very high speed 1.8 to 3.6V applications; it
can be interfaced to 3.6V signal environment for
both inputs and outputs.
This IC is intended for two-wa y asynchronous
communication between data buses; the direction
of data transm ission is determined by DIR input.
The t wo enable inputs nG
canbeusedtodisable
the device so that the buses are effect ively
isolated. The device circuits is including 26Ω series resistance in the A and B port outputs. These
resistors permit to reduc e li ne noise in high speed
applications.
All inputsand outputs areequipped with
protection circuits against st atic discharge, giving
them 2KV ESD immunity and tr ans ient excess
voltage. All floating bus terminals during High Z
State must be held HIGH or LOW.
1/13July 2003
Page 2
74VCXR162245
INPUT AND OUTPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
PIN NoSYMBOLNAME AND FUNCTION
11DIRDirectional Control
2, 3, 5, 6, 8, 9,
11, 12
13,14,16,17,
19, 20, 22, 23
242DIRDirectional Control
252G
36,35,33,32,
30, 29, 27, 26
47,46,44,43,
41, 40, 38, 38
481G
4, 10, 15, 21,
28, 34, 39, 45
7, 18, 31, 42
1B1 to 1B8 Data Inputs/Outputs
2B1 to 2B8 Data Inputs/Outputs
Output Enable Input
2A1 to 2A8 Data Inputs/Outputs
1A1 to 1A8 Data Inputs/Outputs
Output Enable Input
GNDGround (0V)
V
CC
Positive Supply Voltage
TRUTH TABLE
INPUTSFUNCTIONOUTPUT
G
LLOUTPUTINPUTA = B
LHINPUTOUTPUTB = A
HXZZZ
X : Don‘tCare
Z : High Impedance
DIRA BUSB BUSYn
IEC LOGIC SYMBOLS
2/13
Page 3
74VCXR162245
ABSOLUTE MAXIMUM RATINGS
SymbolParameterValueUnit
V
V
V
V
I
I
OK
I
or I
I
CC
P
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
1) I
absolute maximum rating must be observed
O
2) V
<GND,VO>V
O
RECOMMENDED OPERATING CONDITIONS
SymbolParameterValueUnit
V
V
V
V
I
OH,IOL
I
OH,IOL
I
OH,IOL
T
dt/dvInput Rise and Fall Time (note 1)0 to 10ns/V
1) VINfrom0.8V to 2V at VCC=3.0V
Supply Voltage
CC
DC Input Voltage
I
DC Output Voltage (OFF State)
O
DC Output Voltage (High or Low State) (note 1)-0.5 to VCC+ 0.5
O
DC Input Diode Current
IK
DC Output Diode Current (note 2)
DC Output Current
O
DC VCCor Ground Current per Supply Pin
GND
Power Dissipation
D
Storage Temperature
stg
Lead Temperature (10 sec)
L
CC
Supply Voltage
CC
Input Voltage
I
Output Voltage (OFF State)
O
Output Voltage (High or Low State)0 to V
O
High or Low Level Output Current (VCC= 3.0 to 3.6V)
High or Low Level Output Current (VCC= 2.3 to 2.7V)
High or Low Level Output Current (VCC= 1.8V)
Operating Temperature
op
-0.5 to +4.6V
-0.5 to +4.6V
-0.5 to +4.6V
V
-50mA
-50mA
± 50mA
± 100mA
400mW
-65 to +150°C
300°C
1.8 to 3.6V
-0.3 to 3.6V
0 to 3.6V
CC
V
± 12mA
± 8mA
± 4mA
-55 to 125°C
3/13
Page 4
74VCXR162245
DC SPECIFICATIONS (2.7V < VCC< 3.6V unless oth erwise s pecified)
Test ConditionValue
SymbolParameter
V
V
V
V
High Level Input
IH
Voltage
Low Level Input
IL
Voltage
High Level Output
OH
Voltage
Low Level Output
OL
Voltage
(
Input Leakage
I
I
Current
I
I
OZ
Power Off Leakage
off
Current
High Impedance
Output Leakage
Current
I
CC
∆I
Quiescent Supply
Current
ICCincr. per Input
CC
V
CC
(V)
2.7to3.6
2.7to3.6
2.7
3.0
2.7to3.6
2.7
3.0
2.7to3.6
0
2.7to3.6
2.7to3.6
2.7to3.6
-40to85°C-55to125°C
Min.Max.Min.Max.
2.02.0
0.80.8
IO=-100 µAVCC-0.2VCC-0.2
=-6 mA
I
O
I
=-8 mA
O
=-12 mA
I
O
=100 µA
I
O
I
=6 mA
O
I
=8 mA
O
=12 mA
I
O
V
= 0 to 3.6V
I
or VO= 0 to 3.6V
V
I
I=VIH
or V
V
VO= 0 to 3.6V
VI=VCCor GND
or VO=VCCto
V
I
3.6V
VIH=VCC-0.6V
IL
2.22.2
2.42.4
2.22.2
0.20.2
0.40.4
0.50.5
0.80.8
± 5± 5µA
1010µA
± 10± 10µA
2020
± 20± 20
750750µA
Unit
V
V
V
µA
4/13
Page 5
DC SPECIFICATIONS (2.3V < VCC< 2.7V unless oth erwise s pecified)
Test ConditionValue
74VCXR162245
SymbolParameter
V
V
V
V
I
I
OZ
High Level Input
IH
Voltage
Low Level Input
IL
Voltage
High Level Output
OH
Voltage
Low Level Output
OL
Voltage
Input Leakage
I
I
Current
Power Off Leakage
off
Current
High Impedance
Output Leakage
Current
I
CC
Quiescent Supply
Current
V
CC
(V)
2.3to2.7
2.3to2.7
2.3
2.3to2.7
2.3
2.3to2.7
0
2.3to2.7
2.3to2.7
-40to85°C-55to125°C
Min.Max.Min.Max.
1.61.6
0.70.7
IO=-100 µAVCC-0.2VCC-0.2
=-4 mA
I
O
=-6 mA
I
O
=-8 mA
I
O
IO=100 µA
I
=6 mA
O
=8 mA
I
O
= 0 to 3.6V
V
I
or VO= 0 to 3.6V
V
I
I=VIH
or V
V
VO= 0 to 3.6V
VI=VCCor GND
or VO=VCCto
V
I
3.6V
IL
2.02.0
1.81.8
1.71.7
0.20.2
0.40.4
0.60.6
± 5± 5µA
1010µA
± 10± 10µA
2020
± 20± 20
Unit
V
V
V
µA
5/13
Page 6
74VCXR162245
DC SPECIFICATIONS (1.8V < VCC< 2.3V unless oth erwise s pecified)
1) Number of outputs definedas "n". Measuredwith "n-1"outputsswitchingfrom HIGHto LOW or LOW to HIGH. The remaining outputis
measured in the LOW state.
2) Number of outputs definedas "n". Measuredwith "n-1"outputsswitchingfrom HIGHto LOW or LOW to HIGH. The remaining outputis
measured in the HIGH state.
3) Parameters guaranteed by design.
Dynamic Peak Low Voltage
Quiet Output (note 1, 3)
Dynamic Valley Low Voltage
Quiet Output (note 1, 3)
Dynamic Valley High Voltage
Quiet Output (note 2, 3)
1.8
3.30.35
1.8
3.3-0.35
1.8
3.32.65
=0V
V
IL
V
IH=VCC
V
=0V
IL
V
IH=VCC
V
=0V
IL
V
IH=VCC
T
A
Min.Typ.Max.
0.15
-0.15
1.55
Unit
V2.50.25
V2.5-0.25
V2.52.05
7/13
Page 8
74VCXR162245
AC ELECTRICAL CHARACTERISTICS (CL= 30pF, RL= 500Ω, Input tr=tf= 2.0ns)
Test ConditionValue
SymbolParameter
t
PLHtPHL
Propagation Delay
Time
V
CC
(V)
1.81.55.71.56.5
-40 to 85 °C-55 to 125 °C
Min.Max.Min.Max.
Unit
ns2.3 to 2.71.04.31.05.0
3.0 to 3.60.83.40.84.0
t
PZLtPZH
Output Enable Time1.81.57.61.58.6
ns2.3 to 2.71.05.71.06.5
3.0 to 3.60.84.20.84.9
t
PLZtPHZ
Output Disable Time1.81.55.71.56.4
ns2.3 to 2.71.04.81.05.5
3.0 to 3.60.84.10.84.8
t
OSLHtOSHL
Output To Output
Skew Time (note1, 2)
1.80.50.5
ns2.3 to 2.70.50.5
3.0 to 3.60.50.5
1) Skew is defined as the absolute value ofthe difference between the actual propagation delay for any twooutputs of the samedevice switching in the same direction, either HIGH or LOW (t
2) Parameter guaranteed by design
OSLH
=|t
PLHm-tPLHn
|, t
OSHL
=|t
PHLm-tPHLn
|)
CAPACITIVE CHARACTERISTICS
Test ConditionValue
=25°C
SymbolParameter
V
CC
(V)
C
C
OUT
C
1) CPDis defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
circuit)
Input Capacitance
IN
Output Capacitance
Power Dissipation Capacitance
PD
(note 1)
1.8, 2.5 or 3.3
1.8, 2.5 or 3.3
VIN= 0 or V
VIN= 0 or V
1.8, 2.5 or 3.3fIN= 10MHz
V
= 0 or V
IN
CC
CC
CC
T
A
Min.Typ.Max.
4pF
8pF
28pF
CC(opr)=CPDxVCCxfIN+ICC
Unit
/16 (per
8/13
Page 9
TEST CIRCUIT
TESTSWITCH
t
PLH,tPHL
t
PZL,tPLZ(VCC
t
PZL,tPLZ(VCC
t
PZH,tPHZ
CL= 30 pF or equivalent (includes jig and probe capacitance)
=R1=500Ω or equivalent
R
L
R
T=ZOUT
= 3.0 to 3.6V)
= 2.3 to 2.7V or 1.8V)2V
of pulse generator (typically 50Ω)
74VCXR162245
Open
6V
CC
GND
WAVEFORM SYMBOL VALUES
Symbol
V
IH
V
M
V
X
V
Y
V
CC
3.0 to3.6V2.3 to 2.7V1.8V
2.7V
1.5V
V
CC
/2VCC/2
V
CC
V
CC
VOL+ 0.3VVOL+ 0.15VVOL+ 0.15V
VOH- 0.3VVOH- 0.15VVOH- 0.15V
9/13
Page 10
74VCXR162245
WAVEFORM 1: PROPAG ATION DE LAYS (f=1MHz; 50% duty cycle)
WAVEFORM 2: OUTPUT ENABLE AND DISABLE TIME (f=1MHz; 50% duty cycle)
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use o f suc h inf ormat ion n or f or an y infr ingeme nt of paten ts or oth er ri gh ts of third part ies whic h may resul t f rom
its use. No license is grante d by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products ar e not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
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