The 74V2G32 is an advanced high-speed CMOS
DUAL2-INPUTORGATEfabricatedwith
sub-micron silicon gate and double-layer metal
wiring C
2
MOS technology.
The internal circuit is composed of 3 stages
including buffer output, which provide high noise
immunity and stable output.
SOT23-8L
ORDER CODES
PACKAGET & R
SOT23-8L74V2G32STR
Power down protection is provided on all inputs
and outpu ts and 0 t o 7V can be accepted on
inputs with no regard to the supply voltage.
This device c an be used to interface 5V to 3V
systems and it is ideal for portable applications
like pers onal digital assistant, cam corder and all
battery-powered equipment.
All inputsandoutputsare equipped with
protection circuits against static discharge, giving
them ESD immunity and transient e xcess voltage.
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
1) VCC=0V
2) Highor Low State
Supply Voltage
DC Input Voltage
I
DC Output Voltage (see note 1)
O
DC Output Voltage (see note 2)-0.5 to VCC+0.5
O
DC Input Diode Current
DC Output Diode Current
DC Output Current
O
DC VCCor Ground Current
GND
Storage Temperature
Lead Temperature (10 sec)
L
V
CC
Positive Supply Voltage
-0.5 to +7.0V
-0.5 to +7.0V
-0.5 to +7.0V
− 20mA
− 20mA
± 25mA
± 50mA
-65 to +150°C
260°C
V
RECOMMENDED OPERATING CONDITIONS
SymbolParameterValueUnit
V
CC
V
V
V
T
dt/dv
1) VCC=0V
2) Highor Low State
from30% to 70% ofV
3) V
IN
2/8
Supply Voltage
Input Voltage
I
Output Voltage (see note 1)0 to 5.5
O
Output Voltage (see note 2)0 to V
O
Operating Temperature
op
Input Rise and Fall Time (note 3) (V
CC
CC
(V
=5.0± 0.5V)
CC
=3.3± 0.3V)
2to5.5V
0to5.5V
CC
-55 to 125°C
0 to 100
0to20
V
V
ns/V
ns/V
Page 3
DC SPECIFICATIONS
SymbolParameter
V
V
V
I
High Level Input
IH
Voltage
V
Low Level Input
IL
Voltage
High Level Output
OH
Voltage
Low Level Output
OL
Voltage
I
Input Leakage
I
Current
I
Quiescent Supply
CC
Current
Power downOutput
OPD
Leakage Current
Test ConditionValue
V
(V)
CC
= 25°C
A
Min.Typ. Max.Min.Max. Min. Max.
-40 to 85°C -55 to 125°C
T
2.01.51.51.5
3.0to
5.5
0.7V
CC
0.7V
CC
0.7V
CC
2.00.50.50.5
3.0to
5.5
2.0
3.0
4.5
3.0
4.5
2.0
3.0
4.5
3.0
4.5
0to
5.5
5.5
0
IO=-50 µA
=-50 µA
I
O
I
=-50 µA
O
=-4 mA
I
O
=-8 mA
I
O
IO=50 µA
I
=50 µA
O
=50 µA
I
O
=4 mA
I
O
=8 mA
I
O
VI=5.5VorGND
V
O
or GND
=5.5
V
I=VCC
1.92.01.91.9
2.93.02.92.9
4.44.54.44.4
2.582.482.4
3.943.83.7
0.3V
CC
0.3V
CC
0.00.10.10.1
0.00.10.10.1
0.00.10.10.1
0.360.440.55
0.360.440.55
± 0.1± 1± 1µA
11020µA
0.5510µA
74V2G32
Unit
0.3V
CC
V
V
V
V
AC ELECTRICAL CHARACTERISTICS (Input t
Test ConditionValue
SymbolParameter
t
PLHtPHL
(*) Voltage range is 3.3V± 0.3V
(**) Voltage range is 5.0V ± 0.5V
Propagation Delay
Time
V
3.3
3.3
5.0
5.0
C
CC
(V)
L
(pF)
(*)
153.77.01.08.01.09.0
(*)
505.38.01.09.51.010.5
(**)
153.05.01.06.01.07.0
(**)
504.16.51.07.51.08.5
=3ns)
r=tf
= 25°C
T
A
-40 to 85°C -55 to 125°C
Min.Typ. Max.Min.Max. Min. Max.
Unit
ns
3/8
Page 4
74V2G32
CAPACITANCE CHARACTERISTICS
Test ConditionValue
= 25°C
SymbolParameter
T
A
Min.Typ. Max.Min.Max. Min. Max.
C
C
Input Capacitance
IN
Power Dissipation
PD
Capacitance
4101010pF
12pF
(note 1)
1) CPDis defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average current can be obtained by the following equation. I
CC(opr)=CPDxVCCxfIN+ICC
DYNAMIC SWITCHING CHARACTERISTICS
Test ConditionValue
SymbolParameter
V
OLP
V
OLV
1) Number of output defined as "n". Measured with "n-1" outputs switching from HIGH to LOW or LOW to HIGH. The remaining outputs is
measured in the LOW state.
Dynamic Low Level Quiet Output (note 1)
(V)
V
CC
=50pF
C
5.0
L
V
=0V,VIH=3.3V
IL
-40 to 85°C -55 to 125°C
/2
T
=25°C
A
Min.Max.
0.8
-0.8
Unit
Unit
V
4/8
Page 5
TEST CIRCUIT
74V2G32
CL= 15/50pF or equivalent (includes jig and probe capacitance)
R
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