Datasheet 74V2G241 Datasheet (ST)

查询74V2G241 供应商

74V2G241

DUAL BUS BUFFER NON INVERTED (3-STATE)

■ HIGH SPEED: t

■ LOW POWER DISSIPATION:

I

=1µA(MAX.) atTA=25°C

CC

■ HIGH NOISE IMMUNITY:

V

NIH=VNIL

■ POWER DOWN PROTECTION ON INPUTS

= 28% VCC(MIN.)

= 3.8ns (TYP.) at VCC=5V

PD

AND OUTPUTS

■ SYMMETRICAL OUTPUT IMPEDANCE:

|I

|=IOL=8mA(MIN)atVCC=4.5V

OH

■ BALANCED PROPAGATION DELAYS:

t

≅ t

PLH

PHL

■ OPERATING VOLTAGE RANG E:

V

(OPR) = 2V to 5.5V

CC

■ IMPROVED LATCH-UP IMMUNITY

DESCRIPTION

The 74V2G241 is anadvanced high-speed CMOS
DUAL BUS BUFFER NON INVERTE R fabricated
with sub-micron silicon gate and double-layer
metal wiring C

2

MOS technology.
Power down protection is provided on all inputs
and outputs and 0 to 7V can be accepted on

SOT23-8L

ORDER CODES

PACKAGE T & R

SOT23-8L 74V2G241STR

inputs with no regard to the supply voltage. This
device can be used to interface 5V to 3V systems
and it is ideal for portable ap plicat ions like
personal digital assistant, camcorder and all
battery-powered equipment.
All inputs and outputs are equipped with
protection circuits aga inst st atic discharge, giving
them ESD immunity and transient excess voltage.

PIN CONNECTION AND IEC LOG IC SYMBOLS

1/9June 2003

74V2G241

INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION

PIN No SYMBOL NAME AND FUNCTION

1, 7 1G
2, 5 1A, 2A Data Inputs
3, 6 2Y, 1Y Data Outputs

4 GND Ground (0V)
8

TRUTH TABLE

V

, 2G Output Enable Inputs

CC

Positive Supply Voltage

1G

2G A Y

LHL L
LHHH

HLXZ

X: "H" or "L"
Z: High Impedance

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

CC

V
V
V

I

IK

I

OK

I

or I

I

CC

T

stg

T

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.

1) V

=0V or nG=VCC(Output in High Impedance state)

CC

2) High or LowState

Supply Voltage
DC Input Voltage

I

DC Output Voltage (see note 1)

O

DC Output Voltage (see note 2) -0.5 to VCC+ 0.5

O

DC Input Diode Current
DC Output Diode Current
DC Output Current

O

DC VCCor Ground Current

GND

Storage Temperature
Lead Temperature (10 sec)

L

-0.5 to +7.0 V

-0.5 to +7.0 V

-0.5 to +7.0 V
V

− 20 mA

− 20 mA
± 25 mA
± 50 mA

-65 to +150 °C

260 °C

RECOMMENDED OPERATING CONDITIONS

Symbol Parameter Value Unit

V

CC

V
V
V
T

dt/dv

1) VCC=0V or Output in High Impedance state

2) High or LowState

3) V

from30% to70% ofV

IN

2/9

Supply Voltage
Input Voltage

I

Output Voltage (see note 1)

O

Output Voltage (see note 2) 0 to V

O

Operating Temperature

op

(V

CC

CC

=3.3±0.3V)

= 5.0 ± 0.5V)

Input Rise and Fall Time (note 3) (V

CC

2 to 5.5 V
0 to 5.5 V
0 to 5.5 V

CC

-55 to 125 °C
0 to 100

0to20

V

ns/V
ns/V

DC SPECIFICATIONS

Symbol Parameter

V

V

V

I

High Level Input

IH

Voltage

V

Low Level Input

IL

Voltage

High Level Output

OH

Voltage

Low Level Output

OL

Voltage

High Impedance

I

OZ

Output Leakage
Current

Input Leakage

I

I

Current
Power down Output

OPD

Leakage Current
Quiescent Supply

I

CC

Current

Test Condition Value

V

(V)

CC

T

A

Min. Typ. Max. Min. Max. Min. Max.

-40 to 85°C -55 to 125°C

= 25°C

2.0 1.5 1.5 1.5

3.0to

5.5

0.7V

CC

0.7V

CC

0.7V

CC

2.0 0.5 0.5 0.5

3.0to

5.5

2.0

3.0

4.5

3.0

4.5

2.0

3.0

4.5

3.0

4.5

5.5

0to

5.5
0

5.5

IO=-50 µA

=-50 µA

I

O

=-50 µA

I

O

=-4 mA

I

O

=-8 mA

I

O

IO=50 µA

=50 µA

I

O

=50 µA

I

O

=4 mA

I

O

=8 mA

I

O

I=VIH

or V

IL

V

VO= 5.5 or GND

VI= 5.5V or GND

= 5.5

V

O

V

I=VCC

or GND

1.9 2.0 1.9 1.9

2.9 3.0 2.9 2.9

4.4 4.5 4.4 4.4

2.58 2.48 2.48

3.94 3.8 3.8

0.3V

CC

0.3V

CC

0.0 0.1 0.1 0.1

0.0 0.1 0.1 0.1

0.0 0.1 0.1 0.1

0.36 0.44 0.44

0.36 0.44 0.44

±0.25 ± 2.5 ± 2.5 µA

± 0.1 ± 1 ± 1 µA

0.5 5 10 µA

22020µA

74V2G241

Unit

V

CC

V

V

V

0.3V

3/9

74V2G241

AC ELECTRICAL CHARACTERISTICS (Input tr=tf=3ns)

Test Condition Value

Symbol Parameter

t
t

t
t

t
t

(*) Voltage rangeis 3.3V ± 0.3V
(**) Voltage range is 5.0V ± 0.5V

Propagation Delay

PLH

Time

PHL

Output Disable

PLZ

Time

PHZ

Output Enable

PZL

Time

PZH

V

3.3

3.3

5.0

5.0

3.3

3.3

5.0

5.0

3.3

3.3

5.0

5.0

C

CC

(V)

L

(pF)

(*)

15 5.1 7.5 1.0 8.5 1.0 9.05

(*)

50 5.6 8.0 1.0 9.5 1.0 10.5

(**)

15 3.8 5.5 1.0 6.5 1.0 7.5

(**)

50 4.3 6.5 1.0 7.5 1.0 8.5

(*)

(*)
(**)
(**)

(*)

(*)
(**)
(**)

15
50
15
50
15
50
15
50

R

L

R

L

R

L

R

L

R

L

R

L

R

L

R

L

=1KΩ
=1KΩ
=1KΩ
=1KΩ
=1KΩ
=1KΩ
=1KΩ
=1KΩ

T

Min. Typ. Max. Min. Max. Min. Max.

= 25°C

A

-40 to 85°C -55 to 125°C

5.4 8.0 1.0 9.0 1.0 10.0

7.9 11.5 1.0 12.5 1.0 13.5

3.6 5.0 1.0 6.0 1.0 7.0

5.1 7.0 1.0 8.0 1.0 9.0

5.4 7.6 1.0 9.5 1.0 10.5

5.9 8.5 1.0 10.0 1.0 11.0

3.7 5.9 1.0 7.0 1.0 8.0

4.1 6.5 1.0 7.5 1.0 8.5

Unit

ns

ns

ns

CAPACITIVE CHARACTERISTICS

Test Condition Value

= 25°C

Symbol Parameter

T

A

Min. Typ. Max. Min. Max. Min. Max.

C

C

C

Input Capacitance

IN

Output

OUT

Capacitance
Power Dissipation

PD

Capacitance

410 10 10pF
6pF

14 pF

(note 1)

1) CPDis defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average current can be obtained by the following equation. I

CC(opr)=CPDxVCCxfIN+ICC

-40 to 85°C -55 to 125°C

/2

Unit

4/9

TEST CIRCUIT TEST CIRCUIT

TEST SWITCH

t

PLH,tPHL

t

PZL,tPLZ

t

PZH,tPHZ

CL=15/50pF or equivalent (includes jig and probe capacitance)
R1 = 1KΩ or equivalent
R

T=ZOUT

of pulse generator (typically 50Ω)

Open

V

CC

GND

74V2G241

WAVEFORM 1 : PROPAGATION DELAYS (f=1MHz; 50% duty cycle)

5/9

74V2G241

WAVEFORM 2: OUTPUT ENABLE AND DISABLE TIME (f=1MHz; 50% duty cycle)

6/9

74V2G241

SOT23-8L MECHANICAL DATA

mm. mils

DIM.

MIN. TYP MAX. MIN. TYP. MAX.

A 0.90 1.45 35.4 57.1

A1 0.00 0.15 0.0 5.9

A2 0.90 1.30 35.4 51.2

b 0.22 0.38 8.6 14.9

C 0.09 0.20 3.5 7.8

D 2.80 3.00 110.2 118.1

E 2.60 3.00 102.3 118.1

E1 1.50 1.75 59.0 68.8

e0.65 25.6

e1 1.95 76.7

L 0.35 0.55 13.7 21.6

7/9

74V2G241

Tape & Reel SOT23-xL MECHANICAL DATA

DIM.

MIN. TYP MAX. MIN. TYP. MAX.

A 180 7.086
C 12.8 13.0 13.2 0.504 0.512 0.519
D 20.2 0.795
N 60 2.362

T 14.4 0.567
Ao 3.13 3.23 3.33 0.123 0.127 0.131
Bo 3.07 3.17 3.27 0.120 0.124 0.128
Ko 1.27 1.37 1.47 0.050 0.054 0.0.58
Po 3.9 4.0 4.1 0.153 0.157 0.161

P 3.9 4.0 4.1 0.153 0.157 0.161

mm. inch

8/9

74V2G241

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use o f suc h inf ormat ion n or f or an y infr ingeme nt of paten ts or oth er ri gh ts of third part ies whic h may resul t f rom
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.

Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco

© The ST logo is a registered trademark of STMicroelectronics

© 2003 STMicroelectronics - Printed in Italy - All Rights Reserved

STMicroelectronics GROUP OF COMPANIES

Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.

© http://www.st.com

9/9