Datasheet 74V2G14STR, 74V2G14CTR Datasheet (SGS Thomson Microelectronics)

1/8June 2003

■ HIGH SPEED: t

PD

= 3.0ns (TYP.) at VCC=5V

■ LOW POWER DISSIPATION:

I

CC

=1µA(MAX.) atTA=25°C

■ TYPICAL HYSTERESIS:

V

H

= 800mV at VCC=4.5V

V

H

= 500mV at VCC=3.0V

■ POWER DOWN PROT ECTION ON INPUTS

AND OUTPUTS

■ SYMMETRICAL OUTPUT IMPEDANCE:

|I

OH

|=IOL=8mA(MIN)atVCC=4.5V

II

OH

|=IOL=4mA(MIN)atVCC=3.0V

■ BALANCED PROPAGATION DELAYS:

t

PLH

≅ t

PHL

■ OPERATING VOLTAGE RANG E:

V

CC

(OPR) = 2V to 5.5V

■ IMPROVED LATCH-UP IMMUNITY

DESCRIPTION

The 74V2G14 is an advanced high-speed CMOS
TRIPLE SCHMITT TRIGGER INVERTER
fabricated with sub-micron silicon gate and
double-layer metal wiring C

2

MOS tecnology.

The internal circuit is composed of 3 stages
including buffer output, which provide high noise
immunity and stable output.

Power down protection is provided on all inputs
and outputs a nd 0 to 7V can be accepted on
inputs with no regard to th e supply voltage.
Pin configuration and f unction are the same as
those of t he 74V 2G04, but 74V2G14 has
hysteresis on i nputs.
This device can be used to interface 5V to 3V
systems and it is idea l for portable applications
like personal digital assistant, camcorder and all
battery-powered equipment.
All inputs and outputs are equipped with
protection circuits aga inst static discharge, giving
them ESD immunity and transient excess voltage.

74V2G14

TRIPLE SCHMITT INVERTER

PIN CONNECTION AND IEC LOGIC SYMBOLS

ORDER CODES

PACKAGE T & R

SOT23-8L 74V2G14STR

SOT23-8L

74V2G14

2/8

INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION

TRUTH TABLE

ABSOLUTE MAXIMUM RATINGS

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.

1) Vcc=0V

2) Highor Low State

RECOMMENDED OPERATING CONDITIONS

PIN No SYMBOL NAME QND FUNCTION

1, 3, 6 1A, 2A, 3A Data Inputs
7, 5, 2 1Y, 2Y, 3Y Data Outputs

4 GND Ground (0V)
8

V

CC

Positive Supply Voltage

nA nY

LH

HL

Symbol Parameter Value Unit

V

CC

Supply Voltage

-0.5 to +7.0 V

V

I

DC Input Voltage

-0.5 to +7.0 V

V

O

DC Output Voltage (see note 1)

-0.5 to +7.0 V

V

O

DC Output Voltage (see note 2) -0.5 to VCC+ 0.5

V

I

IK

DC Input Diode Current

− 20 mA

I

OK

DC Output Diode Current

− 20 mA

I

O

DC Output Current

± 25 mA

I

CC

or I

GND

DC VCCor Ground Current

± 50 mA

T

stg

Storage Temperature

-65 to +150 °C

T

L

Lead Temperature (10 sec)

260 °C

Symbol Parameter Value Unit

V

CC

Supply Voltage

2 to 5.5 V

V

I

Input Voltage

0 to 5.5 V

V

O

Output Voltage 0 to 5.5

V

V

O

Output Voltage 0 to V

CC

V

T

op

Operating Temperature

-55 to 125 °C

74V2G14

3/8

DC SPECIFICATIONS

AC ELECTRICAL CHARACTERISTICS (Input t

r=tf

=3ns)

(*) Voltage range is3.3V ± 0.3V
(**) Voltage range is 5.0V ± 0.5V

Symbol Parameter

Test Condition Value

Unit

V

CC

(V)

T

A

= 25°C

-40 to 85°C -55 to 125°C

Min. Typ. Max. Min. Max. Min. Max.

V

P

High Level Input
Voltage

3.0 2.20 2.20 2.20
V

4.5 3.15 3.15 3.15

5.5 3.85 3.85 3.85

V

N

Low Level Input
Voltage

3.0 0.90 0.90 0.90
V

4.5 1.35 1.35 1.35

5.5 1.65 1.65 1.65

V

H

Hysteresis Voltage 3.0 0.30 1.20 0.30 1.20 0.30 1.20

V

4.5 0.40 1.40 0.40 1.40 0.40 1.40

5.5 0.50

1.60

0.50

1.60

0.50

1.60

V

OH

High Level Ouput
Voltage

2.0

IO=-50 µA

1.9 2.0 1.9 1.9

V

3.0

I

O

=-50 µA

2.9 3.0 2.9 2.9

4.5

I

O

=-50 µA

4.4 4.5 4.4 4.4

3.0

I

O

=-4 mA

2.58 2.48 2.4

4.5

I

O

=-8 mA

3.94 3.8 3.7

V

OL

Low Level Output
Voltage

2.0

IO=50 µA

0.0 0.1 0.1 0.1

V

3.0

I

O

=50 µA

0.0 0.1 0.1 0.1

4.5

I

O

=50 µA

0.0 0.1 0.1 0.1

3.0

I

O

=4 mA

0.36 0.44 0.55

4.5

I

O

=8 mA

0.36 0.44 0.55

I

I

Input Leakage
Current

0to

5.5

V

I

= 5.5V or GND

± 0.1 ± 1 ± 1 µA

I

CC

Quiescent Supply
Current

5.5

V

I=VCC

or GND

11020µA

I

OPD

Power downOutput
Leakage Current

0

V

O

= 5.5

0.5 5 10 µA

Symbol Parameter

Test Condition Value

Unit

V

CC

(V)

C

L

(pF)

T

A

= 25°C

-40 to 85°C -55 to 125°C

Min. Typ. Max. Min. Max. Min. Max.

t

PLHtPHL

Propagation Delay
Time

3.3

(*)

15 3.7 7.0 1.0 8.0 1.0 9.0

ns

3.3

(*)

50 5.3 8.0 1.0 9.5 1.0 10.5

5.0

(**)

15 3.0 5.0 1.0 6.0 1.0 7.0

5.0

(**)

50 4.1 6.5 1.0 7.5 1.0 8.5

74V2G14

4/8

CAPACITANCE CHARACTERISTICS

1) CPDis defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I

CC(opr)=CPDxVCCxfIN+ICC

/3

DYNAMIC SWITCHING CHARACTERISTICS

1) Number of output defined as "n". Measured with "n-1" outputs switching from HIGH to LOW or LOW to HIGH. The remaining outputs is
measured in the LOW state.

TEST CIRCUIT

CL= 15/50pF or equivalent (includes jig and probe capacitance)
R

T=ZOUT

of pulse generator (typically 50Ω)

Symbol Parameter

Test Condition Value

Unit

T

A

= 25°C

-40 to 85°C -55 to 125°C

Min. Typ. Max. Min. Max. Min. Max.

C

IN

Input Capacitance

410 10 10pF

C

PD

Power Dissipation
Capacitance
(note 1)

12 pF

Symbol Parameter

Test Condition Value

Unit

V

CC

(V)

T

A

=25°C

Min. Max.

V

OLP

Dynamic Low Level Quiet Out­put (note 1)

5.0

C

L

=50pF

V

IL

=0V,VIH= 3.3V

0.8
V

V

OLV

-0.8

74V2G14

5/8

WAVEFORM: PROPAGATION DELAY (f=1MHz; 50% duty cycle)

74V2G14

6/8

DIM.

mm. mils

MIN. TYP MAX. MIN. TYP. MAX.

A 0.90 1.45 35.4 57.1

A1 0.00 0.15 0.0 5.9

A2 0.90 1.30 35.4 51.2

b 0.22 0.38 8.6 14.9

C 0.09 0.20 3.5 7.8

D 2.80 3.00 110.2 118.1

E 2.60 3.00 102.3 118.1

E1 1.50 1.75 59.0 68.8

e0.65 25.6

e1 1.95 76.7

L 0.35 0.55 13.7 21.6

SOT23-8L MECHANICAL DATA

74V2G14

7/8

DIM.

mm. inch

MIN. TYP MAX. MIN. TYP. MAX.

A 180 7.086
C 12.8 13.0 13.2 0.504 0.512 0.519
D 20.2 0.795
N 60 2.362

T 14.4 0.567
Ao 3.13 3.23 3.33 0.123 0.127 0.131
Bo 3.07 3.17 3.27 0.120 0.124 0.128
Ko 1.27 1.37 1.47 0.050 0.054 0.0.58
Po 3.9 4.0 4.1 0.153 0.157 0.161

P 3.9 4.0 4.1 0.153 0.157 0.161

Tape & Reel SOT23-xL MECHANICAL DATA

74V2G14

8/8

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use o f suc h inf ormat ion n or f or an y infr ingeme nt of paten ts or oth er ri gh ts of third part ies whic h may resul t f rom
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.

© The ST logo is a registered trademark of STMicroelectronics

© 2003 STMicroelectronics - Printed in Italy - All Rights Reserved

STMicroelectronics GROUP OF COMPANIES

Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco

Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.

© http://www.st.com