Datasheet 74V2G14 Datasheet (ST)

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74V2G14

TRIPLE SCHMITT INVERTER

■ HIGH SPEED: t

■ LOW POWER DISSIPATION:

I

=1µA(MAX.) atTA=25°C

CC

■ TYPICAL HYSTERESIS:

V

= 800mV at VCC=4.5V

H

V

= 500mV at VCC=3.0V

H

■ POWER DOWN PROT ECTION ON INPUTS

= 3.0ns (TYP.) at VCC=5V

PD

AND OUTPUTS

■ SYMMETRICAL OUTPUT IMPEDANCE:

|I

|=IOL=8mA(MIN)atVCC=4.5V

OH

|=IOL=4mA(MIN)atVCC=3.0V

II

OH

■ BALANCED PROPAGATION DELAYS:

t

≅ t

PLH

PHL

■ OPERATING VOLTAGE RANG E:

V

(OPR) = 2V to 5.5V

CC

■ IMPROVED LATCH-UP IMMUNITY

DESCRIPTION

The 74V2G14 is an advanced high-speed CMOS
TRIPLE SCHMITT TRIGGER INVERTER
fabricated with sub-micron silicon gate and
double-layer metal wiring C

2

MOS tecnology.

The internal circuit is composed of 3 stages
including buffer output, which provide high noise
immunity and stable output.

SOT23-8L

ORDER CODES

PACKAGE T & R

SOT23-8L 74V2G14STR

Power down protection is provided on all inputs
and outputs a nd 0 to 7V can be accepted on
inputs with no regard to th e supply voltage.
Pin configuration and f unction are the same as
those of t he 74V 2G04, but 74V2G14 has
hysteresis on i nputs.
This device can be used to interface 5V to 3V
systems and it is idea l for portable applications
like personal digital assistant, camcorder and all
battery-powered equipment.
All inputs and outputs are equipped with
protection circuits aga inst static discharge, giving
them ESD immunity and transient excess voltage.

PIN CONNECTION AND IEC LOGIC SYMBOLS

1/8June 2003

74V2G14

INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION

PIN No SYMBOL NAME QND FUNCTION

1, 3, 6 1A, 2A, 3A Data Inputs
7, 5, 2 1Y, 2Y, 3Y Data Outputs

4 GND Ground (0V)
8

TRUTH TABLE

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

V
V
V

I

I

OK

I

or I

I

CC

T

T

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.

1) Vcc=0V

2) Highor Low State

Supply Voltage

CC

DC Input Voltage

I

DC Output Voltage (see note 1)

O

DC Output Voltage (see note 2) -0.5 to VCC+ 0.5

O

DC Input Diode Current

IK

DC Output Diode Current
DC Output Current

O

DC VCCor Ground Current

GND

Storage Temperature

stg

Lead Temperature (10 sec)

L

V

CC

Positive Supply Voltage

nA nY

LH

HL

-0.5 to +7.0 V

-0.5 to +7.0 V

-0.5 to +7.0 V
V

− 20 mA

− 20 mA
± 25 mA
± 50 mA

-65 to +150 °C

260 °C

RECOMMENDED OPERATING CONDITIONS

Symbol Parameter Value Unit

V

V
V
V
T

2/8

Supply Voltage

CC

Input Voltage

I

Output Voltage 0 to 5.5

O

Output Voltage 0 to V

O

Operating Temperature

op

2 to 5.5 V
0 to 5.5 V

CC

-55 to 125 °C

V
V

DC SPECIFICATIONS

Symbol Parameter

V

High Level Input

P

Voltage

V

Low Level Input

N

Voltage

V

Hysteresis Voltage 3.0 0.30 1.20 0.30 1.20 0.30 1.20

H

V

V

I

I

OPD

High Level Ouput

OH

Voltage

Low Level Output

OL

Voltage

Input Leakage

I

I

Current
Quiescent Supply

CC

Current
Power downOutput

Leakage Current

74V2G14

Test Condition Value

= 25°C

T

V

CC

(V)

A

Min. Typ. Max. Min. Max. Min. Max.

3.0 2.20 2.20 2.20

4.5 3.15 3.15 3.15

5.5 3.85 3.85 3.85

3.0 0.90 0.90 0.90

4.5 1.35 1.35 1.35

5.5 1.65 1.65 1.65

4.5 0.40 1.40 0.40 1.40 0.40 1.40

5.5 0.50

2.0

3.0

4.5

3.0

4.5

2.0

3.0

4.5

3.0

4.5

0to

5.5

5.5

0

IO=-50 µA

=-50 µA

I

O

I

=-50 µA

O

=-4 mA

I

O

=-8 mA

I

O

IO=50 µA

=50 µA

I

O

=50 µA

I

O

=4 mA

I

O

=8 mA

I

O

V

= 5.5V or GND

I

V

O

or GND

= 5.5

V

I=VCC

1.9 2.0 1.9 1.9

2.9 3.0 2.9 2.9

4.4 4.5 4.4 4.4

2.58 2.48 2.4

3.94 3.8 3.7

0.0 0.1 0.1 0.1

0.0 0.1 0.1 0.1

0.0 0.1 0.1 0.1

-40 to 85°C -55 to 125°C

1.60

0.50

1.60

0.50

1.60

0.36 0.44 0.55

0.36 0.44 0.55

± 0.1 ± 1 ± 1 µA

11020µA

0.5 5 10 µA

Unit

V

V

V

V

V

AC ELECTRICAL CHARACTERISTICS (Input t

Test Condition Value

Symbol Parameter

t

PLHtPHL

(*) Voltage range is3.3V ± 0.3V
(**) Voltage range is 5.0V ± 0.5V

Propagation Delay
Time

V

3.3

3.3

5.0

5.0

C

CC

(V)

L

(pF)

(*)

15 3.7 7.0 1.0 8.0 1.0 9.0

(*)

50 5.3 8.0 1.0 9.5 1.0 10.5

(**)

15 3.0 5.0 1.0 6.0 1.0 7.0

(**)

50 4.1 6.5 1.0 7.5 1.0 8.5

=3ns)

r=tf

= 25°C

T

A

-40 to 85°C -55 to 125°C

Min. Typ. Max. Min. Max. Min. Max.

Unit

ns

3/8

74V2G14

CAPACITANCE CHARACTERISTICS

Test Condition Value

= 25°C

Symbol Parameter

T

A

Min. Typ. Max. Min. Max. Min. Max.

C

C

Input Capacitance

IN

Power Dissipation

PD

Capacitance

410 10 10pF

12 pF

(note 1)

1) CPDis defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I

DYNAMIC SWITCHING CHARACTERISTICS

Test Condition Value

Symbol Parameter

V

OLP

V

OLV

1) Number of output defined as "n". Measured with "n-1" outputs switching from HIGH to LOW or LOW to HIGH. The remaining outputs is
measured in the LOW state.

Dynamic Low Level Quiet Out­put (note 1)

(V)

V

CC

=50pF

C

5.0

L

V

=0V,VIH= 3.3V

IL

-40 to 85°C -55 to 125°C

CC(opr)=CPDxVCCxfIN+ICC

T

=25°C

A

Min. Max.

0.8

-0.8

Unit

/3

Unit

V

TEST CIRCUIT

CL= 15/50pF or equivalent (includes jig and probe capacitance)
R

T=ZOUT

of pulse generator (typically 50Ω)

4/8

WAVEFORM: PROPAGATION DELAY (f=1MHz; 50% duty cycle)

74V2G14

5/8

74V2G14

SOT23-8L MECHANICAL DATA

mm. mils

DIM.

MIN. TYP MAX. MIN. TYP. MAX.

A 0.90 1.45 35.4 57.1

A1 0.00 0.15 0.0 5.9

A2 0.90 1.30 35.4 51.2

b 0.22 0.38 8.6 14.9

C 0.09 0.20 3.5 7.8

D 2.80 3.00 110.2 118.1

E 2.60 3.00 102.3 118.1

E1 1.50 1.75 59.0 68.8

e0.65 25.6

e1 1.95 76.7

L 0.35 0.55 13.7 21.6

6/8

Tape & Reel SOT23-xL MECHANICAL DATA

74V2G14

DIM.

MIN. TYP MAX. MIN. TYP. MAX.

A 180 7.086
C 12.8 13.0 13.2 0.504 0.512 0.519
D 20.2 0.795
N 60 2.362

T 14.4 0.567
Ao 3.13 3.23 3.33 0.123 0.127 0.131
Bo 3.07 3.17 3.27 0.120 0.124 0.128
Ko 1.27 1.37 1.47 0.050 0.054 0.0.58
Po 3.9 4.0 4.1 0.153 0.157 0.161

P 3.9 4.0 4.1 0.153 0.157 0.161

mm. inch

7/8

74V2G14

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consequences of use o f suc h inf ormat ion n or f or an y infr ingeme nt of paten ts or oth er ri gh ts of third part ies whic h may resul t f rom
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mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
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systems without express written approval of STMicroelectronics.

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