Datasheet 74V2G132STR, 74V2G132CTR Datasheet (SGS Thomson Microelectronics)

74V2G132

DUAL 2-INPUT SHMITT TRIGGER NAND GATE

■ HIGH SPEED: t

■ LOW POWER DISSIPATION:

I

=1µA(MAX.) atTA=25°C

CC

■ TYPICAL HYSTERESIS:

V

= 800mV at VCC=4.5V

H

V

= 500mV at VCC=3.0V

H

■ POWER DOWN PROT ECTION ON INPUTS

= 3.0ns (TYP.) at VCC=5V

PD

AND OUTPUTS

■ SYMMETRICAL OUTPUT IMPEDANCE:

|I

|=IOL=8mA(MIN)atVCC=4.5V

OH

II

|=IOL=4mA(MIN)atVCC=3.0V

OH

■ BALANCED PROPAGATION DELAYS:

t

≅ t

PLH

PHL

■ OPERATING VOLTAGE RANG E:

V

(OPR) = 2V to 5.5V

CC

■ IMPROVED LATCH-UP IMMUNITY

DESCRIPTION

The 74V2G132 is anadvanced high-speed CMOS
SINGLE 2-INPUT NAND GATE fabricated with
sub-micron silicon gate and double-layer metal
wiring C

2

MOS technology.

SOT23-8L

ORDER CODES

PACKAGE T & R

SOT23-8L 74V2G132STR

Pin configuration and function are the same as
those of the 74V 2G00 but the 74V2G132 has
hysteresis.
The internal circuit is composed of 3 stages
including buffer output, which provide high noise
immunity and stable output.
Power down protection is provided on all inputs
and 0 to 7V can be accepted on inputs wit h no
regard to the supply voltage. This device can be
usedto interface 5V to 3V.

PIN CONNECTION AND IEC LOGIC SYMBOLS

1/7June 2003

74V2G132

INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION

PIN No SYMBOL NAME QND FUNCTION

1, 5 1A, 2A Data Input
2, 6 1B, 2B Data Input
7, 3 1Y, 2Y Data Output

4 GND Ground (0V)
8

TRUTH TABLE

ABY

LLH

LHH
HLH
HHL

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

V
V
V

I

I

OK

I

or I

I

CC

T

T

Absolute Maximum Rating are those value beyond which damage to the device may occur. Functional operation under these condition is not
implied

Supply Voltage

CC

DC Input Voltage

I

DC Output Voltage (see note 1)

O

DC Output Voltage (see note 2) -0.5 to VCC+ 0.5

O

DC Input Diode Current

IK

DC Output Diode Current
DC Output Current

O

DC VCCor Ground Current

GND

Storage Temperature

stg

Lead Temperature (10 sec)

L

V

CC

Positive Supply Voltage

-0.5 to +7.0 V

-0.5 to +7.0 V

-0.5 to +7.0 V

− 20 mA

− 20 mA
± 25 mA
± 50 mA

-65 to +150 °C
260 °C

V

RECOMMENDED OPERATING CONDITIONS

Symbol Parameter Value Unit

V

V
V
V
T

2/7

Supply Voltage

CC

Input Voltage

I

Output Voltage 0 to 5.5

O

Output Voltage 0 to V

O

Operating Temperature

op

2 to 5.5 V
0 to 5.5 V

CC

-55 to 125 °C

V
V

DC SPECIFICATION

Symbol Parameter

V

High Level Input

P

Voltage

V

Low Level Input

N

Voltage

V

Hysteresis Voltage 3.0 0.30 0.5 1.20 0.30 1.20 0.30 1.20

H

V

V

I

I

OPD

High Level Output

OH

Voltage

Low Level Output

OL

Voltage

Input Leakage

I

I

Current
Quiescent Supply

CC

Current
Power down Output

Leakage Current

74V2G132

Test Condition Value

= 25°C

T

V

CC

(V)

A

Min. Typ. Max. Min. Max. Min. Max.

3.0 2.20 2.20 2.20

4.5 3.15 3.15 3.15

5.5 3.85 3.85 3.85

3.0 0.90 0.90 0.90

4.5 1.35 1.35 1.35

5.5 1.65 1.65 1.65

4.5 0.40 0.8 1.40 0.40 1.40 0.40 1.40

5.5 0.50 1.0

2.0

3.0

4.5

3.0

4.5

2.0

3.0

4.5

3.0

4.5

0to

5.5

5.5

0

IO=-50 µA

=-50 µA

I

O

I

=-50 µA

O

=-4 mA

I

O

=-8 mA

I

O

IO=50 µA

=50 µA

I

O

=50 µA

I

O

=4 mA

I

O

=8 mA

I

O

V

= 5.5V or GND

I

V

O

or GND

= 5.5

V

I=VCC

1.9 2.0 1.9 1.9

2.9 3.0 2.9 2.9

4.4 4.5 4.4 4.4

2.58 2.48 2.4

3.94 3.8 3.7

0.0 0.1 0.1 0.1

0.0 0.1 0.1 0.1

0.0 0.1 0.1 0.1

-40 to 85°C -55 to 125°C

1.60

0.50

1.60

0.50

1.60

0.36 0.44 0.55

0.36 0.44 0.55

± 0.1 ± 1 ± 1 µA

11020µA

0.5 5 10 µA

Unit

V

V

V

V

V

AC ELECTRICAL CHARACTERISTICS (Input t

Test Condition Value

Symbol Parameter

t

PLHtPHL

(*) Voltage rangeis 3.3V ± 0.3V
(**) Voltage range is 5.0V ± 0.5V

Propagation Delay
Time

V

3.3

3.3

5.0

5.0

C

CC

(V)

L

(pF)

(*)

15 5.5 7.9 1.0 9.5 1.0 9.5

(*)

50 8.0 11.4 1.0 13.0 1.0 13.0

(**)

15 3.7 5.5 1.0 6.5 1.0 6.5

(**)

50 5.2 7.5 1.0 8.5 1.0 8.5

=3ns)

r=tf

= 25°C

T

A

-40 to 85°C -55 to 125°C

Min. Typ. Max. Min. Max. Min. Max.

Unit

ns

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74V2G132

CAPACITANCE CHARACTERISTICS

Test Condition Value

= 25°C

Symbol Parameter

T

A

Min. Typ. Max. Min. Max. Min. Max.

C

C

Input Capacitance

IN

Power Dissipation

PD

Capacitance

410 10 10pF

19 pF

(note 1)

1) CPDis defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average current can be obtained by the following equation. I

CC(opr)=CPDxVCCxfIN+ICC

TEST CIRCUIT

-40 to 85°C -55 to 125°C

Unit

CL= 50pF or equivalent (includes jig and probe capacitance)
RL=R1=500Ωor equivalent
RT=Z

of pulse generator (typically 50Ω)

OUT

WAVEFORM: PROPAGATION DELAY (f=1MHz; 50% duty cycle)

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74V2G132

SOT23-8L MECHANICAL DATA

mm. mils

DIM.

MIN. TYP MAX. MIN. TYP. MAX.

A 0.90 1.45 35.4 57.1

A1 0.00 0.15 0.0 5.9

A2 0.90 1.30 35.4 51.2

b 0.22 0.38 8.6 14.9

C 0.09 0.20 3.5 7.8

D 2.80 3.00 110.2 118.1

E 2.60 3.00 102.3 118.1

E1 1.50 1.75 59.0 68.8

e0.65 25.6

e1 1.95 76.7

L 0.35 0.55 13.7 21.6

5/7

74V2G132

Tape & Reel SOT23-xL MECHANICAL DATA

DIM.

MIN. TYP MAX. MIN. TYP. MAX.

A 180 7.086
C 12.8 13.0 13.2 0.504 0.512 0.519
D 20.2 0.795
N 60 2.362

T 14.4 0.567
Ao 3.13 3.23 3.33 0.123 0.127 0.131
Bo 3.07 3.17 3.27 0.120 0.124 0.128
Ko 1.27 1.37 1.47 0.050 0.054 0.0.58
Po 3.9 4.0 4.1 0.153 0.157 0.161

P 3.9 4.0 4.1 0.153 0.157 0.161

mm. inch

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74V2G132

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