The 74V2G126 is anadvancedhigh-speed CMOS
DUAL BUS BUFFER fabricated with sub-micron
silicon gate and double-layer metal wiring C2MOS
tecnology.
3-STATE control input nG has to be set LOW to
place the output into the high impedance state.
Power down protection is provided on all inputs
and outputs and 0 to 7V can be accepted on
SOT23-8LSOT323-8L
ORDER CODES
PACKAGET & R
SOT23-8L74V2G126STR
SOT323-8L74V2G126CTR
inputs with no regard to the supply voltage. This
device can be used to interface 5V to 3V systems
and it is ideal for portable applications like
personal digital assistant, camcorder and all
battery-powered equipment.
All inputs and outputsare equippedwith
protection circuits against static discharge, giving
them ESD immunity and transient excess voltage.
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
1) Vcc=0V or nG=Vcc(Output in High Impedence state)
2) High or Low State
Supply Voltage
CC
DC Input Voltage
I
DC Output Voltage (see note 1)
O
DC Output Voltage (see note 2)-0.5 to VCC+ 0.5
O
DC Input Diode Current
IK
DC Output Diode Current
DC Output Current
O
DC VCCor Ground Current
GND
Storage Temperature
stg
Lead Temperature (10 sec)
L
V
CC
Positive Supply Voltage
-0.5 to +7.0V
-0.5 to +7.0V
-0.5 to +7.0V
− 20mA
− 20mA
± 25mA
± 50mA
-65 to +150°C
260°C
V
RECOMMENDED OPERATING CONDITIONS
SymbolParameterValueUnit
V
V
V
V
T
dt/dv
1) Vcc=0V or nG=Vcc (Output in High Impedence state)
2) High or Low State
from 30% to 70% of V
3) V
IN
2/11
Supply Voltage
CC
Input Voltage
I
Output Voltage (see note 1)
O
Output Voltage (see note 2)0 to V
O
Operating Temperature
op
(V
CC
CC
= 3.3 ± 0.3V)
= 5.0 ± 0.5V)
Input Rise and Fall Time (note 3) (V
CC
2 to 5.5V
0 to 5.5V
0 to 5.5V
CC
-55 to 125°C
0 to 100
0to20
V
ns/V
ns/V
Page 3
DC SPECIFICATION
SymbolParameter
V
V
V
V
I
I
OPD
I
High Level Input
IH
Voltage
Low Level Input
IL
Voltage
High Level Ouput
OH
Voltage
Low Level Output
OL
Voltage
High Impedance
OZ
Output Leakage
Current
I
Input Leakage
I
Current
Power downOutput
Leakage Current
Quiescent Supply
CC
Current
Test ConditionValue
V
(V)
CC
T
A
Min.Typ. Max.Min. Max.Min. Max.
-40 to 85°C -55 to 125°C
=25°C
2.01.51.51.5
3.0 to
5.5
0.7V
CC
0.7V
CC
0.7V
CC
2.00.50.50.5
3.0 to
5.5
2.0
3.0
4.5
3.0
4.5
2.0
3.0
4.5
3.0
4.5
5.5
0to
5.5
0
5.5
IO=-50 µA
=-50 µA
I
O
I
=-50 µA
O
=-4mA
I
O
=-8mA
I
O
I
=50 µA
O
=50 µA
I
O
I
=50 µA
O
=4 mA
I
O
I
=8 mA
O
I=VIH
orV
IL
V
VO= 5.5 or GND
V
= 5.5V or GND
I
V
= 5.5
O
V
I=VCC
or GND
1.92.01.91.9
2.93.02.92.9
4.44.54.44.4
2.582.482.4
3.943.83.7
0.3V
CC
0.3V
CC
0.00.10.10.1
0.00.10.10.1
0.00.10.10.1
0.360.440.55
0.360.440.55
±0.25± 2.5± 5µA
± 0.1± 1± 1µA
0.5510µA
11020µA
74V2G126
Unit
V
CC
V
V
V
0.3V
3/11
Page 4
74V2G126
AC ELECTRICAL CHARACTERISTICS (Input tr=tf= 3ns)
Test ConditionValue
SymbolParameter
t
PLH
t
PHL
t
t
PHZ
t
t
PZH
(*) Voltage range is 3.3V ± 0.3V
(**) Voltage range is 5.0V ± 0.5V
Propagation Delay
Time
Output Disable
PLZ
Time
Output Enable
PZL
Time
3.3
3.3
5.0
5.0
3.3
3.3
5.0
5.0
3.3
3.3
5.0
5.0
C
V
CC
(V)
L
(pF)
(*)
155.17.51.08.51.09.5
(*)
505.68.01.09.51.010.5
(**)
153.85.51.06.51.07.5
(**)
504.36.51.07.51.08.5
(*)
15RL=1KΩ5.48.01.09.01.010.0
(*)
(**)
(**)
(*)
(*)
(**)
(**)
R
50
15
50
L
R
L
R
L
=1KΩ
=1KΩ
=1KΩ
15RL=1KΩ5.47.61.09.51.010.5
R
50
15
50
L
R
L
R
L
=1KΩ
=1KΩ
=1KΩ
Min.Typ. Max.Min. Max.Min. Max.
=25°C
T
A
-40 to 85°C -55 to 125°C
7.911.51.012.51.013.5
3.65.01.06.01.07.0
5.17.01.08.01.09.0
5.98.51.010.01.011.0
3.75.91.07.01.08.0
4.16.51.07.51.08.5
Unit
ns
ns
ns
CAPACITIVE CHARACTERISTICS
Test ConditionValue
T
SymbolParameter
C
C
C
Input Capacitance
IN
Output
OUT
Capacitance
Power Dissipation
PD
Capacitance
(note 1)
1) CPDis defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average current can be obtained by the following equation. I
=25°C
A
-40 to 85°C -55 to 125°C
Min.Typ. Max.Min. Max.Min. Max.
4101010pF
6pF
14pF
CC(opr)=CPDxVCCxfIN+ICC
/2
Unit
4/11
Page 5
TEST CIRCUIT TEST CIRCUIT
TESTSWITCH
t
PLH,tPHL
t
PZL,tPLZ
t
PZH,tPHZ
CL=15/50pF or equivalent (includes jig and probe capacitance)
R1 = 1KΩ or equivalent
R
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