The 74V2G08 is an advanced high-speed CMOS
DUAL 2-INPUT AND GATE fabricated with
sub-micron silicon gate and double-layer metal
wiring C
2
MOS technology.
SOT23-8L
ORDER CODES
PACKAGET & R
SOT23-8L74V2G08STR
The internal circuit i s composed of 2 stages
including buffer output, which provide high noise
immunity and stable output.
Power down protection is provided on all inputs
and 0 to 7V can be accepted on inputs with no
regard to the supply voltage. This device can be
usedto interface 5V to 3V.
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
Supply Voltage
CC
DC Input Voltage
I
DC Output Voltage-0.5 to VCC+ 0.5
O
DC Input Diode Current
IK
DC Output Diode Current
DC Output Current
O
DC VCCor Ground Current
GND
Storage Temperature
stg
Lead Temperature (10 sec)
L
V
CC
Positive Supply Voltage
-0.5 to +7.0V
-0.5 to +7.0V
-20mA
± 20mA
± 25mA
± 50mA
-65 to +150°C
260°C
V
RECOMMENDED OPERATING CONDITIONS
SymbolParameterValueUnit
V
V
V
T
dt/dv
1) VINfrom30% to 70% of V
2/7
Supply Voltage
CC
Input Voltage
I
Output Voltage0 to V
O
Operating Temperature
op
Input Rise and Fall Time (note 1) (V
CC
(V
CC
CC
=3.3±0.3V)
= 5.0 ± 0.5V)
2 to 5.5V
0 to 5.5V
CC
-55 to 125°C
0 to 100
0to20
V
ns/V
ns/V
Page 3
DC SPECIFICATIONS
SymbolParameter
V
V
V
High Level Input
IH
Voltage
V
Low Level Input
IL
Voltage
High Level Output
OH
Voltage
Low Level Output
OL
Voltage
Input Leakage
I
I
Current
I
Quiescent Supply
CC
Current
Test ConditionValue
V
(V)
CC
T
A
Min.Typ. Max.Min.Max. Min. Max.
-40 to 85°C -55 to 125°C
= 25°C
2.01.51.51.5
3.0to
5.5
0.7V
CC
0.7V
CC
0.7V
CC
2.00.50.50.5
3.0to
5.5
2.0
3.0
4.5
3.0
4.5
2.0
3.0
4.5
3.0
4.5
0to
5.5
5.5
IO=-50 µA
=-50 µA
I
O
=-50 µA
I
O
=-4 mA
I
O
=-8 mA
I
O
IO=50 µA
=50 µA
I
O
=50 µA
I
O
=4 mA
I
O
=8 mA
I
O
= 5.5V or GND
V
I
V
I=VCC
or GND
1.92.01.91.9
2.93.02.92.9
4.44.54.44.4
2.582.482.4
3.943.83.7
0.3V
CC
0.3V
CC
0.00.10.10.1
0.00.10.10.1
0.00.10.10.1
0.360.440.55
0.360.440.55
± 0.1± 1± 1µA
11020µA
74V2G08
Unit
0.3V
CC
V
V
V
V
AC ELECTRICAL CHARACTERISTICS (Input t
r=tf
=3ns)
Test ConditionValue
SymbolParameter
t
PLHtPHL
(*) Voltage range is3.3V ± 0.3V
(**) Voltage range is 5.0V ± 0.5V
Propagation Delay
Time
V
3.3
3.3
5.0
5.0
T
C
CC
(V)
L
(pF)
(*)
155.27.51.09.01.010.0
(*)
505.88.51.010.01.011.0
(**)
153.85.91.07.01.08.0
(**)
504.67.01.08.01.09.0
A
Min.Typ. Max.Min.Max. Min. Max.
-40 to 85°C -55 to 125°C
Unit
ns
= 25°C
CAPACITIVE CHARACTERISTICS
Test ConditionValue
= 25°C
SymbolParameter
T
A
Min.Typ. Max.Min.Max. Min. Max.
C
C
Input Capacitance
IN
Power Dissipation
PD
Capacitance
4101010pF
10pF
(note 1)
1) CPDis defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
-40 to 85°C -55 to 125°C
CC(opr)=CPDxVCCxfIN+ICC
Unit
/2
3/7
Page 4
74V2G08
TEST CIRCUIT
CL= 15/50pF or equivalent (includes jig and probe capacitance)
R
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use o f suc h inf ormat ion n or f or an y infr ingeme nt of paten ts or oth er ri gh ts of third part ies whic h may resul t f rom
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco