The 74V2G07 is an advanced high-speed CMOS
TRIPLE BUFFER (OPEN DRAIN) fabricated with
sub-micron silicon gate and double-layer metal
wiring C
2
MOS technology.
The internal circuit is composed of 2 stages
including buffer output, which provide high noise
immunity and stable output.
SOT23-8L
ORDER CODES
PACKAGET & R
SOT23-8L74V2G07STR
Power down protection is provided on input and 0
to 7V can be accepted on input with no rega rd to
the supply voltage. This device can be used to
interface5Vto3V.
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
Supply Voltage
CC
DC Input Voltage
I
DC Output Voltage-0.5 to VCC+ 0.5
O
DC Input Diode Current
IK
DC Output Diode Current
DC Output Current
O
DC VCCor Ground Current
GND
Storage Temperature
stg
Lead Temperature (10 sec)
L
V
CC
Positive Supply Voltage
AY
LL
HZ
-0.5 to +7.0V
-0.5 to +7.0V
V
-20mA
± 20mA
± 25mA
± 50mA
-65 to +150°C
260°C
RECOMMENDED OPERATING CONDITIONS
SymbolParameterValueUnit
V
V
V
T
dt/dv
1) VINfrom30% to 70% of V
2/7
Supply Voltage
CC
Input Voltage
I
Output Voltage0 to V
O
Operating Temperature
op
(V
CC
CC
=3.3±0.3V)
= 5.0 ± 0.5V)
Input Rise and Fall Time (note 1) (V
CC
2 to 5.5V
0 to 5.5V
CC
-55 to 125°C
0 to 100
0to20
V
ns/V
ns/V
Page 3
DC SPECIFICATIONS
SymbolParameter
V
V
High Level Input
IH
Voltage
V
Low Level Input
IL
Voltage
Low Level Output
OL
Voltage
High Impedance
I
OZ
Output Leakage
Current
Input Leakage
I
I
Current
Quiescent Supply
I
CC
Current
Test ConditionValue
V
(V)
CC
T
A
Min.Typ. Max.Min. Max. Min. Max.
-40 to 85°C -55 to 125°C
= 25°C
2.01.51.51.5
3.0to
5.5
0.7V
CC
0.7V
CC
0.7V
CC
2.00.50.50.5
3.0to
5.5
2.0
3.0
4.5
3.0
4.5
5.5
0to
5.5
5.5
IO=50 µA
=50 µA
I
O
=50 µA
I
O
=4 mA
I
O
=8 mA
I
O
I=VIH
or V
IL
V
VO=VCCor GND
V
= 5.5V or GND
I
V
I=VCC
or GND
0.3V
CC
0.3V
CC
0.00.10.10.1
0.00.10.10.1
0.00.10.10.1
0.360.440.55
0.360.440.55
±
0.25
± 2.5± 5µA
± 0.1± 1± 1µA
11020µA
74V2G07
Unit
0.3V
CC
V
V
V
AC ELECTRICAL CHARACTERISTICS (Input t
Test ConditionValue
SymbolParameter
t
t
(*) Voltage range is 3.3V± 0.3V
(**) Voltage range is 5.0V ± 0.5V
Propagation Delay
PZL
Time
Propagation Delay
PLZ
Time
V
3.3
3.3
5.0
5.0
3.3
5.0
C
CC
(V)
L
(pF)
(*)
154.87.71.09.01.010.0
(*)
505.38.51.010.01.011.0
(**)
153.75.51.06.51.07.5
(**)
504.27.51.08.51.09.5
(*)
507.510.51.011.51.012.5
(**)
504.77.51.08.51.09.5
=3ns)
r=tf
= 25°C
T
A
-40 to 85°C -55 to 125°C
Min.Typ. Max.Min. Max. Min. Max.
Unit
ns
ns
3/7
Page 4
74V2G07
CAPACITIVE CHARACTERISTICS
Test ConditionValue
= 25°C
SymbolParameter
T
A
Min.Typ. Max.Min. Max. Min. Max.
C
C
C
Input Capacitance4101010pF
IN
Output
OUT
Capacitance
Power Dissipation
PD
Capacitance
5101010pF
3pF
(note 1)
1) CPDis defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
TEST CIRCUIT
-40 to 85°C -55 to 125°C
CC(opr)=CPDxVCCxfIN+ICC
Unit
/3
CL= 15/50pF or equivalent (includes jig and probe capacitance)
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