The 74V2G03 is an advanced high-speed CMOS
DUAL 2-INPUT OPEN DRAIN NAND GA TE
fabricated with sub-micron silicon gate and
double-layer metal wiring C
2
MOS technology.
The internal circuit is composed of 3 stages
including buffer output, which provide high noise
immunity and stable output.
The device can, with an external pull-up resistor,
be used in wired AND configuration. This device
SOT23-8L
ORDER CODES
PACKAGET & R
SOT23-8L74V2G03STR
can also be used as a led driver in any other
application requiring current sink.
Power down protection is provide d on all inputs
and 0 to 7V can be accept ed on inputs with no
regard to the supply voltage. This device can be
usedto interface 5V to 3V.
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
Supply Voltage
CC
DC Input Voltage
I
DC Output Voltage-0.5 to VCC+ 0.5
O
DC Input Diode Current
IK
DC Output Diode Current
DC Output Current
O
DC VCCor Ground Current
GND
Storage Temperature
stg
Lead Temperature (10 sec)
L
V
CC
Positive Supply Voltage
-0.5 to +7.0V
-0.5 to +7.0V
-20mA
± 20mA
± 25mA
± 50mA
-65 to +150°C
260°C
V
RECOMMENDED OPERATING CONDITIONS
SymbolParameterValueUnit
V
V
V
T
dt/dv
1) VINfrom30% to 70% of V
2/7
Supply Voltage
CC
Input Voltage
I
Output Voltage0 to V
O
Operating Temperature
op
(V
CC
CC
=3.3±0.3V)
= 5.0 ± 0.5V)
Input Rise and Fall Time (note 1) (V
CC
2 to 5.5V
0 to 5.5V
CC
-55 to 125°C
0 to 100
0to20
V
ns/V
ns/V
Page 3
DC SPECIFICATIONS
SymbolParameter
V
V
High Level Input
IH
Voltage
V
Low Level Input
IL
Voltage
Low Level Output
OL
Voltage
High Impedance
I
OZ
Output Leakage
Current
Input Leakage
I
I
Current
Quiescent Supply
I
CC
Current
Test ConditionValue
V
(V)
CC
T
A
Min.Typ. Max.Min.Max. Min. Max.
-40 to 85°C -55 to 125°C
= 25°C
2.01.51.51.5
3.0to
5.5
0.7V
CC
0.7V
CC
0.7V
CC
2.00.50.50.5
3.0to
5.5
2.0
3.0
4.5
3.0
4.5
5.5
0to
5.5
5.5
IO=50 µA
=50 µA
I
O
=50 µA
I
O
=4 mA
I
O
=8 mA
I
O
I=VIH
or V
IL
V
VO=VCCor GND
V
= 5.5V or GND
I
V
I=VCC
or GND
0.3V
CC
0.3V
CC
0.00.10.10.1
0.00.10.10.1
0.00.10.10.1
0.360.440.55
0.360.440.55
±
0.25
± 2.5± 5µA
± 0.1± 1± 1µA
11020µA
74V2G03
Unit
0.3V
CC
V
V
V
AC ELECTRICAL CHARACTERISTICS
Test ConditionValue
SymbolParameter
t
t
(*) Voltage range is3.3V ± 0.3V
(**) Voltage range is 5.0V ± 0.5V
Propagation Delay
PZL
Time
Propagation Delay
PLZ
Time
V
3.3
3.3
5.0
5.0
3.3
5.0
C
CC
(V)
L
(pF)
(*)
154.86.51.08.01.09.0
(*)
505.37.51.09.01.010.0
(**)
153.95.51.06.51.07.5
(**)
504.36.01.07.51.08.5
(*)
506.89.51.010.01.011.0
(**)
504.86.51.07.01.08.0
= 25°C
T
A
-40 to 85°C -55 to 125°C
Min.Typ. Max.Min.Max. Min. Max.
Unit
ns
ns
3/7
Page 4
74V2G03
CAPACITIVE CHARACTERISTICS
Test ConditionValue
= 25°C
SymbolParameter
T
A
Min.Typ. Max.Min.Max. Min. Max.
C
C
C
Input Capacitance
IN
Output
OUT
Capacitance
Power Dissipation
PD
Capacitance
4101010pF
5101010pF
3pF
(note 1)
1) CPDis defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
TEST CIRCUIT
-40 to 85°C -55 to 125°C
CC(opr)=CPDxVCCxfIN+ICC
Unit
/2
CL= 15/50pF or equivalent (includes jig and probe capacitance)
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