Datasheet 74V1T79 Datasheet (ST)

查询74V1T79供应商

SINGLE POSITIVE EDGE TRIGGERED

■ HIGH SPEED:

f

= 180MHz (TYP.) at VCC=5V

MAX

t

= 3.9ns (TYP.) at VCC=5V

CK-Q

■ LOW POWER DISSIPATION:

I

=1µA(MAX.) at TA=25°C

CC

■ COMPATIBLE WITHTTL OUTPUTS:

V

=2V(MIN),VIL=0.8V(MAX)

IH

■ POWER DOWN PROTECTION ON INPUTS

■ SYMMETRICAL OUTPUT IMPEDANCE:

|I

|=IOL=8mA(MIN)atVCC=4.5V

OH

■ BALANCED PROPAGATION DELAYS:

t

≅ t

PLH

PHL

■ OPERATING VOLTAGE RANGE :

V

(OPR) = 4.5V to 5.5V

CC

■ IMPROVED LATCH-UP IMMUNITY

DESCRIPTION

The 74V1T79 is an advanced high-speed CMOS
SINGLE POSITIVE EDGE TRIGGERED D-TYPE
FLIP-FLOP fabricated with sub-micron silicon
gate and double-layer metal wiring C
technology. It is designed to operate from 4.5V to

5.5V, making this device ideal for portable
applications.
This D-Type flip-flop is controlled by a clock input
(CK). On the positive transition of the clock, the Q
output will be s et to the logic state that was setup
at the D input.

2

MOS

74V1T79

D-TYPE FLIP-FLOP

SOT323-5LSOT23-5L

ORDER CODES

PACKAGE T & R

SOT23-5L 74V1T79STR

SOT323-5L 74V1T79CTR

Following the hold time interval, data at the D input
can be changed without affecting the level at the
output. Power down protection is provided on
inputs and 0 to 7V can be accepted on inputs with
no rega rd to t he supply voltage. This device can
be used to interface 5V to 3V systems.
It’s available in the commercial and extended
temperature range.
All inputs and output are equipped with protection
circuits against static discharge, giving them ESD
immunity and transient excess v oltage.

PIN CONNECTION AND IEC LOGIC SYMBOLS

1/9April 2004

74V1T79

INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION

PIN N° SYMBOL NAME AND FUNCTION

1 D Data Input
2CK
4 Q Flip-Flop Output

3 GND Ground (0V)
5

TRUTH TABLE

DCKQ

LL

HH

LQn

HQn

ABSOLUTE MAXIMUM RATINGS

V

CC

Clock Input (Positive
Edge)

Positive Supply Voltage

Symbol Parameter Value Unit

V

V

V

I

I

OK

I

or I

I

CC

T

T

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied

Supply Voltage

CC

DC Input Voltage

I

DC Output Voltage -0.5 to VCC+0.5

O

DC Input Diode Current

IK

DC Output Diode Current
DC Output Current

O

DC VCCor Ground Current

GND

Storage Temperature

stg

Lead Temperature (10 sec)

L

-0.5 to +7.0 V

-0.5 to +7.0 V
V

-20 mA

± 20 mA
± 25 mA
± 50 mA

-65 to +150 °C

300 °C

RECOMMENDED OPERATING CONDITIONS

Symbol Parameter Value Unit

V

V
V
T

dt/dv

1) VINfrom0.8V to 2V

Supply Voltage

CC

Input Voltage

I

Output Voltage 0 to V

O

Operating Temperature

op

Input Rise and Fall Time (note 1) (V

=5.0± 0.5V)

CC

4.5 to 5.5 V
0to5.5 V

CC

-55 to 125 °C
0 to 20 ns/V

V

2/9

DC SPECIFICATIONS

Symbol Parameter

V

V

V

+I

High Level Input

IH

Voltage

V

Low Level Input

IL

Voltage
High Level Output

OH

Voltage
Low Level Output

OL

Voltage

I

Input Leakage

I

Current

I

Quiescent Supply

CC

Current
Additional Worst

CC

Case Supply
Current

Test Condition Value

T

= 25°C

V

CC

(V)

4.5to

A

Min. Typ. Max. Min. Max. Min. Max.

222V

5.5

4.5to

5.5

4.5

4.5

4.5

4.5

0to

5.5

5.5

IO=-50 µA 4.4 4.5 4.4 4.4 V

=-8 mA 3.94 3.8 3.7

I

O

IO=50 µA 0.0 0.1 0.1 0.1 V

I

=8 mA 0.36 0.44 0.55

O

VI=5.5VorGND

V

I=VCC

or GND

One Input at 3.4V,
other input at V

5.5

CC

or GND

74V1T79

-40 to 85°C -55 to 125°C

0.8 0.8 0.8 V

± 0.1 ± 1.0 ± 1.0 µA

11020µA

1.35 1.5 1.5 mA

Unit

AC ELECTRICAL CHARACTERISTICS (Input t

r=tf

=3ns)

Test Condition Value

Symbol Parameter

t

PLHtPHL

f

(*) Voltage range is 5.0V ± 0.5V

Propagation Delay
Time CK to Q

t

CK Pulse Width,

W

HIGH or LOW

t

SetupTimeDto

s

CK, HIGH or LOW

t

Hold Time D to CK,

h

HIGH or LOW
Maximum Clock

MAX

Frequency

T

V

(V)

CC

C

(pF)

L

A

Min. Typ. Max. Min. Max. Min. Max.

5.0 (*) 15 3.9 5.5 1.0 6.5 1.0 7.5 ns

5.0 (*) 50 4.5 6.5 1.0 7.5 1.0 8.5

5.0 (*) 3.0 3.0 3.0 ns

5.0 (*) 2.0 2.0 2.0 ns

5.0 (*) 1.0 1.0 1.0 ns

5.0 (*) 50 120 180 120 120 MHz

-40 to 85°C -55 to 125°C

Unit

= 25°C

CAPACITIVE CHARACTERISTICS

Test Condition Value

T

Symbol Parameter

C

C

Input Capacitance

IN

Power Dissipation

PD

Capacitance
(note 1)

1) CPDis defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I

= 25°C

A

-40 to 85°C -55 to 125°C

Min. Typ. Max. Min. Max. Min. Max.

410 10 10pF

8pF

CC(opr)=CPDxVCCxfIN+ICC

Unit

3/9

74V1T79

TEST CIRCUIT

CL= 15/50pF or equivalent (includes jig and probe capacitance)
R

T=ZOUT

of pulse generator (typically 50Ω)

WAVEFORM: PROPAGATION DELAY, S E TUP AND HOLD TIMES (f=1M H z; 50% duty cycle)

4/9

74V1T79

SOT23-5L MECHANICAL DATA

mm. mils

DIM.

MIN. TYP MAX. MIN. TYP. MAX.

A 0.90 1.45 35.4 57.1

A1 0.00 0.10 0.0 3.9

A2 0.90 1.30 35.4 51.2

b 0.35 0.50 13.7 19.7

C 0.09 0.20 3.5 7.8

D 2.80 3.00 110.2 118.1

E 1.50 1.75 59.0 68.8

e0.95 37.4

H 2.60 3.00 102.3 118.1

L 0.10 0.60 3.9 23.6

.

7049676C

5/9

74V1T79

SOT323-5L MECHANICAL DATA

mm. mils

DIM.

MIN. TYP MAX. MIN. TYP. MAX.

A 0.80 1.10 31.5 43.3

A1 0.00 0.10 0.0 3.9

A2 0.80 1.00 31.5 39.4

b 0.15 0.30 5.9 11.8

C 0.10 0.18 3.9 7.1

D 1.80 2.20 70.9 86.6

E 1.80 2.40 70.9 94.5

E1 1.15 1.35 45.3 53.1

e

e1 1.3 51.2

L 0.10 0.30 3.9 11.8

.65

0

25.6

6/9

Tape & Reel SOT23-xL MECHANICAL D ATA

74V1T79

DIM.

MIN. TYP MAX. MIN. TYP. MAX.

A 180 7.086
C 12.8 13.0 13.2 0.504 0.512 0.519
D 20.2 0.795
N 60 2.362

T 14.4 0.567
Ao 3.13 3.23 3.33 0.123 0.127 0.131
Bo 3.07 3.17 3.27 0.120 0.124 0.128
Ko 1.27 1.37 1.47 0.050 0.054 0.0.58
Po 3.9 4.0 4.1 0.153 0.157 0.161

P 3.9 4.0 4.1 0.153 0.157 0.161

mm. inch

7/9

74V1T79

Tape & Reel SOT323-xL MECHANICAL DATA

DIM.

MIN. TYP MAX. MIN. TYP. MAX.

A 175 180 185 6.889 7.086 7.283

C 12.8 13 13.2 0.504 0.512 0.519

D 20.2 0.795

N 59.5 60 60.5 2.362

T 14.4 0.567
Ao 2.25 0.088
Bo 2.7 0.106
Ko 1.2 0.047
Po 3.9 4 4.1 0.153 0.157 0.161

P 3.8 4 4.2 0.149 0.157 0.165

mm. inch

8/9

74V1T79

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such inform ation nor fo r an y infring ement of p atents or o ther rights of third p arties which may r esult f rom
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.

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