Page 1
查询74V1T70供应商
■ HIGHSPEED:t
■
LOW POWER DISSIPATION:
I
=1 µA (MAX.)at TA=25oC
CC
■
COMPATIBLEWITHTTLOUTPUTS:
V
=2V(MIN),VIL=0.8V(MAX)
IH
■ POWERDOWNPROTECTIONON INPUT
■
SYMMETRICALOUTPUTIMPEDANCE:
|I
|=IOL=8 mA(MIN)
OH
■ BALANCEDPROPAGATIONDELAYS:
t
≅ t
PLH
PHL
■ OPERATINGVOLTAGERANGE:
(OPR)= 4.5Vto 5.5V
V
CC
■ IMPROVEDLATCH-UPIMMUNITY
=5.5ns(TYP.)atVCC=5V
PD
DESCRIPTION
The 74V1T70 is an advanced high-speed CMOS
SINGLE BUFFER fabricated with sub-micron
silicon gate and double-layermetal wiring C
2
MOS
technology.
74V1T70
SINGLE BUFFER
PRELIMINARY DATA
S
(SOT23-5L)
ORDERCODE:
74V1T70S 74V1T70C
The internal circuit is composed of 2 stages
including buffer output, which provide high noise
immunityand stableoutput.
Power down protection is provided on inputand 0
to 7V can be accepted on inputwith no regard to
the supply voltage. This device can be used to
interface5V to 3V.
C
(SC-70)
PIN CONNECTION AND IEC LOGICSYMBOLS
October 1999
1/7
Page 2
74V1T70
INPUT EQUIVALENTCIRCUIT
PIN DESCRIPTION
PI N No SYMB OL NAME AND F U NCTIO N
1 N.C. Not Connected
2 1A Data Input
4 1Y Data Output
3 GND Ground (0V)
5V
CC
Positive Supply Voltage
TRUTH TABLE
AY
LL
HH
ABSOLUTE MAXIMUM RATINGS
Symb o l Para met er Val u e Uni t
V
V
V
I
I
OK
I
or I
I
CC
T
T
AbsoluteMaximumRatingsarethosevaluesbeyondwhichdamageto thedevicemayoccur.Functionaloperation underthesecondition isnotimplied.
Supply Voltage -0.5 to +7.0 V
CC
DC Input Voltage -0.5 to +7.0 V
I
DC Output Voltage -0.5 to VCC+ 0.5 V
O
DC Input Diode Current - 20 mA
IK
DC Output Diode Current
DC Output Current ± 25 mA
O
DC VCCor Ground Current ± 50 mA
GND
Storage Temperature -65 to +150
stg
Lead Temperature (10 sec) 260
L
20 mA
±
o
C
o
C
RECOMMENDED OPERATINGCONDITIONS
Symb o l Para met er Value Un it
V
V
V
T
dt/dv
1)VINfrom0.8Vto 2V
2/7
Supply Voltage 4.5 to 5.5 V
CC
Input Voltage 0 to 5.5 V
I
Output Voltage 0 to V
O
Operating Temperature -40 to +85
op
Input Rise and Fall Time (see note 1) (V
=5.0±0.5V)
CC
CC
0 to 20 ns/V
V
o
C
Page 3
74V1T70
DC SPECIFICATIONS
Symb o l Para met er Test Con diti o ns Val u e Uni t
T
V
CC
High Level Input
V
IH
(V)
4.5 to 5.5 2 2 V
Min. Typ. Max. Min. Max.
Voltage
V
IL
Low Level Input
4.5 to 5.5 0.8 0.8 V
Voltage
High Level Output
V
OH
Voltage
Low Level Output
V
OL
Voltage
Input Leakage Current 0 to 5.5 VI= 5.5V or GND ±0.1 ±1.0 µA
I
I
Quiescent Supply
I
CC
4.5 IO=-50 µA 4.4 4.5 4.4
4.5 I
=-8 mA 3.94 3.8
O
4.5 IO=50µA 0.0 0.1 0.1
4.5 I
=8 mA 0.36 0.44
O
5.5 VI=VCCorGND 1 10 µA
Current
Additional Worst Case
I
∆
CC
Supply Current
5.5 One Input at 3.4V,
other input at V
CC
or
GND
=25oC -40 to 85oC
A
1.35 1.5 mA
V
V
AC ELECTRICAL CHARACTERISTICS
(Inputt
r=tf
=3 ns)
Symbol Parameter Test Condition Value Unit
(*)
t
Propagation Delay
PLH
t
Time
PHL
(*)Voltagerange is5V ± 0.5V
V
CC
(V)
C
(pF)
L
Min. Typ. Max. Min. Max.
5.0 15 4.7 6.7 1.0 7.5
5.0
50
=25oC -40 to 85oC
T
A
5.5 7.7 1.0 8.5
ns
CAPACITIVE CHARACTERISTICS
Symb o l Para met er Test Con diti o ns Val u e Uni t
=25oC -40 to 85oC
T
A
Min. Typ. Max. Min. Max.
Input Capacitance 4 10 10
C
IN
Power Dissipation
C
PD
11 pF
Capacitance (note 1)
1)CPDisdefined asthevalue oftheIC’sinternal equivalentcapacitance whichis calculated fromtheoperatingcurrent consumptionwithout load.(Referto
TestCircuit).Average operatingcurrent canbeobtainedbythefollowingequation.I
(opr)= CPD• VCC• fIN+I
CC
CC
pF
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Page 4
74V1T70
TESTCIRCUIT
CL= 15/50 pF orequ ivalent (includes jigand probe capacitance)
R
ofpulse generator (typically50Ω)
T=ZOUT
WAVEFORM:PROPAGATIONDELAYS
(f=1MHz;50% duty cycle)
4/7
Page 5
SOT23-5L MECHANICAL DATA
74V1T70
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 0.90 1.45 35.4 57.1
A1 0.00 0.15 0.0 5.9
A2 0.90 1.30 35.4 51.2
b 0.35 0.50 13.7 19.7
C 0.09 0.20 3.5 7.8
D 2.80 3.00 110.2 118.1
E 2.60 3.00 102.3 118.1
E1 1.50 1.75 59.0 68.8
L 0.35 0.55 13.7 21.6
e 0.95 37.4
e1 1.9 74.8
mm mils
5/7
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74V1T70
SC-70 MECHANICALDATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 0.80 1.10 31.5 43.3
A1 0.00 0.10 0.0 3.9
A2 0.80 1.00 31.5 39.4
b 0.15 0.30 5.9 11.8
C 0.10 0.18 3.9 7.1
D 1.80 2.20 70.9 86.6
E 1.80 2.40 70.9 94.5
E1 1.15 1.35 45.3 53.1
L 0.10 0.30 3.9 11.8
e 0.65 25.6
e1 1.3 51.2
mm mils
6/7
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74V1T70
Information furnished isbelieved to be accurate andreliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject tochange without notice. Thispublication supersedes andreplaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems withoutexpress written approval of STMicroelectronics.
The ST logo is a registeredtrademark of STMicroelectronics
1999 STMicroelectronics – Printed in Italy– All RightsReserved
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