The 74V1GU04 is an advanced high-speed
CMOS SINGLE INVERTER (SINGLE STAGE)
fabricated with sub-micron silicon gat e and
double-layer metal wiring C
2
MOS technology.
The internal circuit is composed of a single stages
inverter, then an unbuffered output.
SOT323-5LSOT23-5L
ORDER CODES
PACKAGET & R
SOT23-5L74V1GU04STR
SOT323-5L74V1GU04CTR
it can be used in analog applicat ion such a crystal
oscillator.
Power down protection is provided on inpu t and 0
to 7V c an be acce pted on input with no regard to
the supply voltage. This device can be used to
interface5Vto3V.
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
Supply Voltage
CC
DC Input Voltage
I
DC Output Voltage-0.5 to VCC+0.5
O
DC Input Diode Current
IK
DC Output Diode Current
DC Output Current
O
DC VCCor Ground Current
GND
Storage Temperature
stg
Lead Temperature (10 sec)
L
V
CC
Positive Supply Voltage
AY
LH
HL
-0.5 to +7.0V
-0.5 to +7.0V
V
-20mA
± 20mA
± 25mA
± 50mA
-65 to +150°C
260°C
RECOMMENDED OPERATING CONDITIONS
SymbolParameterValueUnit
V
V
V
T
2/9
Supply Voltage
CC
Input Voltage
I
Output Voltage0 to V
O
Operating Temperature
op
2to5.5V
0to5.5V
CC
-55 to 125°C
V
Page 3
DC SPECIFICATIONS
SymbolParameter
V
V
V
High Level Input
IH
Voltage
V
Low Level Input
IL
Voltage
High Level Output
OH
Voltage
Low Level Output
OL
Voltage
Input Leakage
I
I
Current
I
Quiescent Supply
CC
Current
74V1GU04
Test ConditionValue
T
= 25°C
V
CC
(V)
A
Min.Typ. Max.Min.Max. Min. Max.
2.01.71.71.7
3.0to
5.5
0.8V
CC
2.00.30.30.3
3.0to
5.5
2.0
3.0
4.5
3.0
4.5
2.0
3.0
4.5
3.0
4.5
0to
5.5
5.5
IO=-50 µA
=-50 µA
I
O
=-50 µA
I
O
=-4 mA
I
O
I
=-8 mA
O
IO=50 µA
I
=50 µA
O
=50 µA
I
O
=4 mA
I
O
I
=8 mA
O
VI=5.5VorGND
V
I=VCC
or GND
1.82.01.81.8
2.73.02.72.7
4.04.54.04.0
2.582.482.4
3.943.83.7
0.2V
0.00.20.20.2
0.00.30.30.3
0.00.50.50.5
-40 to 85°C -55 to 125°C
CC
0.8V
CC
0.2V
CC
0.8V
CC
0.360.440.55
0.360.440.55
± 0.1± 1± 1µA
11020µA
0.2V
CC
Unit
V
V
V
V
AC ELECTRICAL CHARACTERISTICS (Input t
r=tf
=3ns)
Test ConditionValue
= 25°C
SymbolParameter
t
PLHtPHL
(*) Voltage rangeis 3.3V ± 0.3V
(**) Voltage range is 5.0V ± 0.5V
Propagation Delay
Time
V
3.3
3.3
5.0
5.0
C
CC
(V)
L
(pF)
(*)
154.46.51.08.01.09.0
(*)
504.87.01.09.01.010.0
(**)
153.55.51.06.01.07.5
(**)
504.16.01.07.01.08.0
T
A
-40 to 85°C -55 to 125°C
Min.Typ. Max.Min.Max. Min. Max.
Unit
ns
CAPACITIVE CHARACTERISTICS
Test ConditionValue
T
SymbolParameter
C
C
Input Capacitance
IN
Power Dissipation
PD
Capacitance
(note 1)
1) CPDis defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
= 25°C
A
-40 to 85°C -55 to 125°C
Min.Typ. Max.Min.Max. Min. Max.
5101010pF
10pF
CC(opr)=CPDxVCCxfIN+ICC
Unit
3/9
Page 4
74V1GU04
TEST CIRCUIT
CL= 15/50pF or equivalent (includes jig and probe capacitance)
R
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