The 74V1G86 is an advanced high-speed CMOS
SINGLE EXCLUSIVE OR GATE fabricated with
sub-micron silicon gate and double-layer metal
wiring C
2
MOS technology.
SOT323-5LSOT23-5L
ORDER CODES
PACKAGET & R
SOT23-5L74V1G86STR
SOT323-5L74V1G86CTR
Power down protection is provide d on all inputs
and 0 to 7V can be acc epted on inputs with no
regard to the s upply voltage. This device can be
usedto interface 5V to 3V.
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
Supply Voltage
CC
DC Input Voltage
I
DC Output Voltage-0.5 to VCC+0.5
O
DC Input Diode Current
IK
DC Output Diode Current
DC Output Current
O
DC VCCor Ground Current
GND
Storage Temperature
stg
Lead Temperature (10 sec)
L
V
CC
Positive Supply Voltage
-0.5 to +7.0V
-0.5 to +7.0V
-20mA
± 20mA
± 25mA
± 50mA
-65 to +150°C
260°C
V
RECOMMENDED OPERATING CONDITIONS
SymbolParameterValueUnit
V
V
V
T
dt/dv
1) VINfrom30% to 70% of V
2/9
Supply Voltage
CC
Input Voltage
I
Output Voltage0 to V
O
Operating Temperature
op
Input Rise and Fall Time (note 1) (V
CC
CC
(V
=5.0± 0.5V)
CC
=3.3± 0.3V)
2to5.5V
0to5.5V
CC
-55 to 125°C
0 to 100
0to20
V
ns/V
ns/V
Page 3
DC SPECIFICATIONS
SymbolParameter
V
V
V
High Level Input
IH
Voltage
V
Low Level Input
IL
Voltage
High Level Output
OH
Voltage
Low Level Output
OL
Voltage
Input Leakage
I
I
Current
I
Quiescent Supply
CC
Current
Test ConditionValue
V
(V)
CC
= 25°C
A
Min.Typ. Max.Min.Max. Min. Max.
-40 to 85°C -55 to 125°C
T
2.01.51.51.5
3.0to
5.5
0.7V
CC
0.7V
CC
0.7V
CC
2.00.50.50.5
3.0to
5.5
2.0
3.0
4.5
3.0
4.5
2.0
3.0
4.5
3.0
4.5
0to
5.5
5.5
IO=-50 µA
=-50 µA
I
O
=-50 µA
I
O
=-4 mA
I
O
I
=-8 mA
O
IO=50 µA
I
=50 µA
O
=50 µA
I
O
=4 mA
I
O
I
=8 mA
O
VI=5.5VorGND
V
I=VCC
or GND
1.92.01.91.9
2.93.02.92.9
4.44.54.44.4
2.582.482.4
3.943.83.7
0.3V
CC
0.3V
CC
0.00.10.10.1
0.00.10.10.1
0.00.10.10.1
0.360.440.55
0.360.440.55
± 0.1± 1± 1µA
11020µA
74V1G86
Unit
0.3V
CC
V
V
V
V
AC ELECTRICAL CHARACTERISTICS (Input t
r=tf
=3ns)
Test ConditionValue
= 25°C
SymbolParameter
t
PLHtPHL
(*) Voltage rangeis 3.3V ± 0.3V
(**) Voltage range is 5.0V ± 0.5V
Propagation Delay
Time
V
3.3
3.3
5.0
5.0
C
CC
(V)
L
(pF)
(*)
156.69.51.011.01.012.5
(*)
507.310.51.012.01.013.5
(**)
154.86.81.08.01.09.0
(**)
505.37.51.09.01.010.0
T
A
-40 to 85°C -55 to 125°C
Min.Typ. Max.Min.Max. Min. Max.
Unit
ns
CAPACITIVE CHARACTERISTICS
Test ConditionValue
T
SymbolParameter
C
C
Input Capacitance
IN
Power Dissipation
PD
Capacitance
(note 1)
1) CPDis defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
= 25°C
A
-40 to 85°C -55 to 125°C
Min.Typ. Max.Min.Max. Min. Max.
4101010pF
12pF
CC(opr)=CPDxVCCxfIN+ICC
Unit
3/9
Page 4
74V1G86
TEST CIRCUIT
CL= 15/50pF or equivalent (includes jig and probe capacitance)
R
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