Page 1
74V1G32
SINGLE 2-INPUT OR GATE
■ HIGHSPEED:t
■ LOW POWERDISSIPAT ION:
=2 µA (MAX.) at TA=25oC
I
CC
■ HIGHNOISEIMMUNITY:
V
NIH=VNIL
■ POWERDOWN PROTECTIONON INPUTS
■ SYMMETRICALOUTPUT IMPEDANCE:
|=IOL=8 mA(MIN)
|I
OH
■ BALANCEDPROPAGATIONDELAYS:
t
≅ t
PLH
■ OPERATINGVOLTAGERANGE:
V
(OPR)= 2Vto 5.5V
CC
■ IMPROVEDLATCH-UPIMMUNITY
=28%VCC(MIN.)
PHL
=3.8ns (TYP.)atVCC=5V
PD
DESCRIPTION
The 74V1G32is an advanced high-speed CMOS
SINGLE 2-INPUT OR GATE fabricated with
sub-micron silicon gate and double-layer metal
wiringC
2
MOStechnology.
S
(SOT23-5L)
C
(SC-70)
ORDERCODE:
74V1G32S 74V1G32C
The internal circuit is composed of 2 stages
including buffer output, which provide high noise
immunityand stableoutput.
Power down protection is provided on all inputs
and 0 to 7V can be accepted on inputs with no
regard to the supply voltage. This device can be
used to interface 5V to 3V.
PIN CONNECTION AND IEC LOGIC SYMBOLS
October 1999
1/7
Page 2
74V1G32
INPUT EQUIVALENTCIRCUIT
PIN DESCRIPTION
PI N No SYMB OL NAME AND FU NCTION
1 1A Data Input
2 1B Data Input
4 1Y Data Output
5 GND Ground (0V)
3V
CC
Positive Supply Voltage
TRUTH TABLE
ABY
LLL
LHH
HLH
HHH
ABSOLUTE MAXIMUM RATINGS
Symb o l Para met er Val u e Uni t
V
V
V
I
I
OK
I
or I
I
CC
T
T
AbsoluteMaximumRatingsarethosevaluesbeyondwhichdamagetothedevicemayoccur. Functional operation underthese conditionisnot implied.
Supply Voltage -0.5 to +7.0 V
CC
DC Input Voltage -0.5 to +7.0 V
I
DC Output Voltage -0.5 to VCC+ 0.5 V
O
DC Input Diode Current - 20 mA
IK
DC Output Diode Current ± 20 mA
DC Output Current ± 25 mA
O
DC VCCor Ground Current ± 50 mA
GND
Storage Temperature -65 to +150
stg
Lead Temperature (10 sec) 260
L
o
C
o
C
RECOMMENDED OPERATINGCONDITIONS
Symb o l Para met er Value Un it
V
V
V
T
dt/dv
1)VINfrom30%to70%ofV
2/7
Supply Voltage 2.0 to 5.5 V
CC
Input Voltage 0 to 5.5 V
I
Output Voltage 0 to V
O
Operating Temperature -40 to +85
op
(V
CC
CC
=3.3±0.3V)
=5.0±0.5V)
Input Rise and Fall Time (see note 1) (V
CC
CC
0 to 100
0to20
V
o
C
ns/V
ns/V
Page 3
74V1G32
DC SPECIFICATIONS
Symb o l Para met er Test C o n ditions Val u e Uni t
T
V
CC
(V)
High Level Input
V
IH
Voltage
V
Low Level Input
IL
Voltage
V
High Level Output
OH
Voltage
Low Level Output
V
OL
Voltage
Input Leakage Current 0 to 5.5 VI= 5.5V or GND ±0.1 ±1.0 µA
I
I
Quiescent Supply
I
CC
2.0 1.5 1.5
3.0 to 5.5 0.7V
2.0 0.5 0.5
3.0 to 5.5 0.3V
2.0 IO=-50 µA 1.9 2.0 1.9
3.0 I
4.5 I
3.0 I
4.5 I
=-50µA 2.9 3.0 2.9
O
=-50µA 4.4 4.5 4.4
O
=-4 mA 2.58 2.48
O
=-8 mA 3.94 3.8
O
2.0 IO=50 µA 0.0 0.1 0.1
3.0 I
4.5 I
3.0 I
4.5 I
=50µA 0.0 0.1 0.1
O
=50µA 0.0 0.1 0.1
O
=4 mA 0.36 0.44
O
=8 mA 0.36 0.44
O
5.5 VI=VCCorGND 1 10 µA
Min. Typ. Max. Min. Max.
Current
=25oC -40 to 85oC
A
CC
0.7V
CC
CC
0.3V
CC
V
V
V
V
AC ELECTRICAL CHARACTERISTICS (Inputtr=tf=3 ns)
Symbol Parameter Test Condition Value Unit
t
Propagation Delay
PLH
t
Time
PHL
(*) Voltagerange is3.3V± 0.3V
(**) Voltagerangeis5V±0.5V
V
3.3
3.3
5.0
5.0
CC
(V)
(**)
(**)
C
L
(pF)
(*)
15 5.5 8.0 1.0 9.5
(*)
50 8.0 11.5 1.0 13.0
T
=25oC -40 to 85oC
A
Min. Typ. Max. Min. Max.
15 3.8 5.5 1.0 6.5
50 5.3 7.5 1.0 8.5
ns
CAPACITIVE CHARACTERISTICS
Symb o l Para met er Test C o n ditions Val u e Uni t
=25oC -40 to 85oC
T
A
Min. Typ. Max. Min. Max.
Input Capacitance 4 10 10
C
IN
Power Dissipation
C
PD
14 pF
Capacitance (note 1)
1)CPDisdefined asthevalue oftheIC’sinternal equivalentcapacitance whichiscalculated fromtheoperatingcurrent consumptionwithout load.(Referto
TestCircuit).Average operatingcurrent canbeobtainedbythefollowingequation.I
(opr)= CPD• VCC• fIN+ICC/4(perGate)
CC
pF
3/7
Page 4
74V1G32
TESTCIRCUIT
CL= 15/50pFor equivalent (includes jigand probe capacitance)
R
ofpulsegenerator (typically50Ω)
T=ZOUT
WAVEFORM:PROPAGATIONDELAYS
(f=1MHz;50% duty cycle)
4/7
Page 5
SOT23-5L MECHANICALDATA
74V1G32
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 0.90 1.45 35.4 57.1
A1 0.00 0.15 0.0 5.9
A2 0.90 1.30 35.4 51.2
b 0.35 0.50 13.7 19.7
C 0.09 0.20 3.5 7.8
D 2.80 3.00 110.2 118.1
E 2.60 3.00 102.3 118.1
E1 1.50 1.75 59.0 68.8
L 0.35 0.55 13.7 21.6
e 0.95 37.4
e1 1.9 74.8
mm mils
5/7
Page 6
74V1G32
SC-70 MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 0.80 1.10 31.5 43.3
A1 0.00 0.10 0.0 3.9
A2 0.80 1.00 31.5 39.4
b 0.15 0.30 5.9 11.8
C 0.10 0.18 3.9 7.1
D 1.80 2.20 70.9 86.6
E 1.80 2.40 70.9 94.5
E1 1.15 1.35 45.3 53.1
L 0.10 0.30 3.9 11.8
e 0.65 25.6
e1 1.3 51.2
mm mils
6/7
Page 7
74V1G32
Information furnished isbelieved tobe accurate andreliable. However, STMicroelectronics assumes no responsibility forthe consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under anypatent or patent rights of STMicroelectronics. Specification mentioned in thispublication are
subject to change without notice. Thispublication supersedes andreplaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in lifesupport devices or systems withoutexpress written approval of STMicroelectronics.
The ST logo isa registeredtrademark of STMicroelectronics
1999 STMicroelectronics – Printed in Italy– All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil- China- Finland - France -Germany - HongKong - India - Italy - Japan- Malaysia - Malta - Morocco
Singapore - Spain- Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com
.
7/7
Loading...